JPS63188948A - Formation of bump for bonding - Google Patents
Formation of bump for bondingInfo
- Publication number
- JPS63188948A JPS63188948A JP62020725A JP2072587A JPS63188948A JP S63188948 A JPS63188948 A JP S63188948A JP 62020725 A JP62020725 A JP 62020725A JP 2072587 A JP2072587 A JP 2072587A JP S63188948 A JPS63188948 A JP S63188948A
- Authority
- JP
- Japan
- Prior art keywords
- spherical
- bonding
- bonded
- copper wire
- copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015572 biosynthetic process Effects 0.000 title claims 2
- 238000000034 method Methods 0.000 claims abstract description 39
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910052802 copper Inorganic materials 0.000 claims abstract description 19
- 239000010949 copper Substances 0.000 claims abstract description 19
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims abstract description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 238000005520 cutting process Methods 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 5
- 239000002184 metal Substances 0.000 abstract description 5
- 230000007774 longterm Effects 0.000 abstract description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 239000011295 pitch Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 208000025174 PANDAS Diseases 0.000 description 1
- 208000021155 Paediatric autoimmune neuropsychiatric disorders associated with streptococcal infection Diseases 0.000 description 1
- 240000000220 Panda oleosa Species 0.000 description 1
- 235000016496 Panda oleosa Nutrition 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 235000009508 confectionery Nutrition 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は半導体装置の製造および半導体の基板への実
装におけるボンディング用バンプの形成方法に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for forming bonding bumps in manufacturing semiconductor devices and mounting semiconductors on substrates.
第８図は従来のテープキャリア方式によるボンディング
方法を示す部分側面図であり、この方式は図に示すよう
に、長尺でスプロケットホール付のポリイミドテープ１
１１の開孔部にすずめつき銅り−ｓ ＋２）２突出させ
たテープキャリアを半導体チップ（３）と接近させ、チ
ップ１３）上の電極（４）と銅リード（２）とを接合さ
せるものである。FIG. 8 is a partial side view showing a bonding method using a conventional tape carrier method. As shown in the figure, this method uses a long polyimide tape with sprocket holes.
A tape carrier with a tinned copper paste attached to the opening of 11 (+2) 2 is brought close to the semiconductor chip (3), and the electrode (4) on the chip 13) and the copper lead (2) are bonded to each other. It is.
この場合、現在では第４図、第５図及び第６図に示す三
通りの方法が採用されている。In this case, three methods shown in FIGS. 4, 5, and 6 are currently employed.
第４図に示す方法は、半導体チップ（３）上の電極（４
）にチタン；岨及びタングステン；６）のバリア層を介
して金バンプ１７１ ′Ｊ＆−形成しておき、この金バ
ンプ１７）とすずめつき鋼リード（２）を熱圧着させる
ものである。The method shown in FIG. 4 is based on the method shown in FIG.
Gold bumps 171'J&- are formed in advance through a barrier layer of titanium;
第５図に示す方法は、例えば海外エレクトロニクス株式
会社が取扱っているメサ社友の全メタルオートメーテツ
ドボンデイングテープのカタログに示されているもので
あり、銅リード（２）をエツチングすることによりバン
プ形状をつくり表面に薄く金めつき（８）を施して、こ
れ全アルミ電極（４）上に熱圧着させるものである。The method shown in Figure 5 is shown, for example, in the catalog of Mesa Friends' all-metal automated bonding tape handled by Kaigai Electronics Co., Ltd., and bumps are formed by etching the copper lead (2). A shape is created, the surface is thinly plated with gold (8), and this is thermocompressed onto the all-aluminum electrode (4).
第６図に示す方法は、すずめつき銅リード（２）上に転
写方式で金バンプ（９）全形成し、これをアルミニクム
電極１４）上に熱圧着させるものである。In the method shown in FIG. 6, gold bumps (9) are entirely formed on a tinned copper lead (2) by a transfer method, and then bonded by thermocompression onto an aluminum electrode (14).
第４図ないし第６図に示す従来のボンディング方法は以
上のようになされており、各々次のような問題点を有す
る。The conventional bonding methods shown in FIGS. 4 to 6 are performed as described above, and each has the following problems.
即ち、第４図の方法のものは、半導体チップ（３）上に
多層のメタライズを必要とするため、新たな生産設備の
導入が必要となる上、蒸着条件等のばらつきにより、ボ
ンディング不良など品質上の問題が多い。でた、第５図
及び第６図に示す方法は、接合部が、金とアルミニツム
という拡散成長により劣化し易い組合せとなっているた
め、ボンディング条件および使用環境の制約が厳しい。That is, the method shown in Fig. 4 requires multilayer metallization on the semiconductor chip (3), which requires the introduction of new production equipment, and also causes quality problems such as bonding defects due to variations in vapor deposition conditions. There are many problems above. In the method shown in FIGS. 5 and 6, the bonding portion is a combination of gold and aluminum, which is easily degraded by diffusion growth, and therefore the bonding conditions and usage environment are severely restricted.
さらに、テープ＋１１価格が高くなるという欠点がある
。また、第５図の方法は金めつき（９）が薄いことおよ
びバンプの形状などから接合性が極めて悪い。Furthermore, there is a drawback that the tape +11 price is high. Furthermore, the method shown in FIG. 5 has extremely poor bonding properties due to the thinness of the gold plating (9) and the shape of the bumps.
この発明は上記のような問題点を解消するためになされ
たもので、安価で長期信頓性があり安定な接合がおこな
えるバンプを簡便に形成できる方法を堤供しようとする
ものである。This invention was made to solve the above-mentioned problems, and aims to provide a method for easily forming bumps that are inexpensive, reliable for a long time, and capable of stable bonding.
この発明に係るポンディグ用バンプの形成方法は、銅ワ
イヤの先端を球状にし、この球状部分を被接合材に接合
し、上記鋼ワイヤを切断後、凹面を有した加工ツールで
その表面形状が球形又はなだらかな凸面となるように加
圧成形するものである。The method for forming bumps for pounding according to the present invention involves making the tip of a copper wire spherical, joining this spherical portion to a material to be joined, cutting the steel wire, and then using a processing tool having a concave surface to shape the surface into a spherical shape. Alternatively, it may be pressure-molded to form a gently convex surface.
この発明により被接合材に形成されたバンプの形は球状
又はなだらかな凸面であるので、ボンディングの際、変
形を伴って接合されるため表面の酸化膜等がとれて金属
表面が露出し、安定な接合ができる。Since the bumps formed on the materials to be bonded according to this invention have a spherical or gently convex shape, they are bonded with deformation during bonding, so the oxide film on the surface is removed and the metal surface is exposed, making it stable. It is possible to make suitable connections.
甘たバンプは銅により形成されるので、安価であり、ア
ルミニツムと銅の拡散成長の恐れもなく艮期信頓性が得
られる。Since the sweet bumps are formed from copper, they are inexpensive and reliable during production without fear of diffusion growth between aluminum and copper.
以下、この発明の一実施例を図について説明する。第１
図ａ、ｂ及びＣは各々この発明の一医施Ｕ］によるテー
プキャリアボンディング用バンプの形成方法を工程順に
示す断面図である。An embodiment of the present invention will be described below with reference to the drawings. 1st
Figures a, b, and c are cross-sectional views showing step by step a method for forming a bump for tape carrier bonding according to the present invention.
まず第１図ａ ＶＣ示すように、キャピラリチップ１１
１１ ｋ用いて、銅ワイヤ（ｌＯ）の先端を球状にし、
この球状部分を銅リード（２）上にポールボンディング
する。First, as shown in Figure 1a VC, the capillary tip 11
11k to make the tip of the copper wire (lO) spherical,
This spherical portion is pole-bonded onto the copper lead (2).
なお、銅ワイヤのポールボンディングに関しては例えば
「日経マイクロデバイスＪ １９８６．９目号Ｐ８９〜
Ｐ１００Ｋ記載されている。Regarding pole bonding of copper wire, for example, see "Nikkei Microdevice J 1986.9 issue P89~
P100K is listed.
次に第１図ｂＶｃ示すように銅ワイヤ（！０）を引張′
リボールＩＪ２）上部で切断する。この場合、塑
性変形を伴うので、ポール共上部には突起（ｌ濁が残存
する。Next, pull the copper wire (!0) as shown in Figure 1bVc'
Reball IJ2) Cut at the top. In this case, since plastic deformation is involved, a protrusion remains on the upper part of the pole.
このような突起Ｑ（ト）はテープキャリアボンディング
時に半導体チップ（３）を損傷させるなど、接合性を極
度に低下させるので好ましくない。そこで、第１図Ｃに
示すように凹面を有する卯エツールα４で、表面形状゛
が球形又はなだらかな凸面となるように加工成形し、ボ
ンディングに最適な形状にする。即ちこのような形状に
することにより、ボンダイングの際、変形を伴って接合
され、表面の酸化膜等がとれて金属表面が露出し、安定
な接合が得られる。Such protrusions Q (g) are undesirable because they can damage the semiconductor chip (3) during tape carrier bonding and extremely reduce bonding properties. Therefore, as shown in FIG. 1C, the surface shape is formed into a spherical shape or a gently convex surface using a tool α4 having a concave surface, so that the shape is optimal for bonding. That is, by forming such a shape, the metal parts are bonded with deformation during bonding, and the oxide film on the surface is removed to expose the metal surface, resulting in stable bonding.
なお、ここで、一連のプロセスは銅の酸化を防上するた
めにアルゴン等の不活性雰囲気あるいは水素を混合させ
た還元性の雰囲気とする。Here, the series of processes is performed in an inert atmosphere such as argon or in a reducing atmosphere mixed with hydrogen in order to prevent copper from oxidizing.
これにより、銅リード（２）上に銅バンプ００を安定か
つ簡便に形成することかり能となる。なお、この場合、
銅バンプｔｅＩ５１の大きさは、ポールボンディングす
る際の銅ボールの大きさを変えることによって、自由に
変えることが出来、ボンディングピッチの縮小、微細化
にも十分対応することができる。This makes it possible to stably and easily form the copper bump 00 on the copper lead (2). In this case,
The size of the copper bump teI 51 can be freely changed by changing the size of the copper ball during pole bonding, and can sufficiently accommodate reductions in bonding pitch and miniaturization.
第２図はこの発明の一実施例によるテープキャリアボン
ディング用パンダの形成方法によりボンディングされた
半導体部品を示す平面図であり、リードピッチ（ＩＯが
１００μｍ程度まで対応できる。FIG. 2 is a plan view showing a semiconductor component bonded by a method for forming a panda for tape carrier bonding according to an embodiment of the present invention, which can handle lead pitches (IO) up to about 100 μm.
なお、上記実施例においては銅り−）″（２）上に銅バ
ンプを形成する方法を示したが、半導体チップ（３）上
のアルミニウム電極（４）に同様の方法により銅バンプ
を形成しても同様の効果が得られる０
贅た、上記実施例はテープキャリア方式のものに対して
行ったが、他の方式のボンディング用バンプの形成方法
として適用してもよいことは言うまでもない。In addition, in the above example, the method of forming copper bumps on the copper layer (2) was shown, but the copper bumps could also be formed on the aluminum electrode (4) on the semiconductor chip (3) by the same method. Although the above embodiments were carried out using a tape carrier method, it goes without saying that the present invention may be applied to other methods of forming bonding bumps.
以上のようにこの発明におけるボンディング用バンプの
形成方法は、銅ワイヤの先端を球状にし、この球状部分
を被接合材に接合し、上記鋼ワイヤ全切断後、凹面を有
した加工ツールでその表面形状が球形又はなだらかな凸
面となるように加圧成形するものであるので、接合性に
優れ、安価で長期信頓性があるバンプを簡便に形成する
ことが出来る効果がある。As described above, the method of forming a bonding bump according to the present invention involves making the tip of a copper wire spherical, joining this spherical part to the material to be joined, and then cutting the entire steel wire, and then using a processing tool having a concave surface to form a surface of the copper wire. Since the bumps are press-molded to have a spherical shape or a gently convex surface, it is possible to easily form bumps that have excellent bonding properties, are inexpensive, and have long-term reliability.
第１図ａ、ｂおよびＣは各々この発明の一実施例による
テープキャリアボンディング用バンクの形成方法？工程
順に示す断面図、第２図はこの発明の一実施例によるテ
ープキャリアボンディング用バンプの形成方法によりボ
ンディングされた半導体部品を示す平面図、第８図は従
来のテープキャリア方式によるボンディング方法を示す
部分側面図、第４図及び第６図は各々従来のテープキャ
リアボンダイング方法を詳細に示す部分側面図、並びに
第５図は従来のテープキャリアボンディング方法を詳細
に示す部分断面図である。
＋２）−−一銅リード、＋３）−−一半導体チツブ、＋
４）−−−アルミニウム電極、（＋０１−−一銅ワイヤ
、＋１４）−ｍ−加工ツール、ａ均一−−銅バンプ。
なお、図中、同一符号は同−又は相当部分を示す。FIGS. 1a, 1b and 1c each illustrate a method of forming a tape carrier bonding bank according to an embodiment of the present invention. 2 is a cross-sectional view showing the process order, FIG. 2 is a plan view showing a semiconductor component bonded by a method for forming bumps for tape carrier bonding according to an embodiment of the present invention, and FIG. 8 is a plan view showing a bonding method using a conventional tape carrier method. 4 and 6 are partial side views showing the conventional tape carrier bonding method in detail, and FIG. 5 is a partial cross-sectional view showing the conventional tape carrier bonding method in detail. +2)--One copper lead, +3)--One semiconductor chip, +
4)---Aluminum electrode, (+01--copper wire, +14)-m-processing tool, a uniform--copper bump. In addition, in the figures, the same reference numerals indicate the same or corresponding parts.
Claims (4)
合材に接合し、上記銅ワイヤを切断後凹面を有した加工
ツールでその表面形状が球形又はなだらかな凸面となる
ように加圧成形するボンディング用バンプの形成方法。(1) Make the tip of the copper wire spherical, join this spherical part to the material to be joined, and after cutting the copper wire, press it with a processing tool with a concave surface so that the surface shape becomes spherical or gently convex. How to form a bonding bump to be molded.
にする特許請求の範囲第１項記載のボンディング用バン
プの形成方法。(2) The method for forming a bonding bump according to claim 1, wherein the atmosphere during bump formation is an inert or reducing atmosphere.
請求の範囲第１項又は第８項記載のボンディング用バン
プの形成方法。(3) The method for forming a bonding bump according to claim 1 or 8, wherein the material to be bonded is a copper lead of a tape carrier.
ある特許請求の範囲第１項又は第２項記載のボンディン
グ用バンプの形成方法。(4) The method for forming a bonding bump according to claim 1 or 2, wherein the material to be bonded is an aluminum electrode on a semiconductor chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62020725A JPS63188948A (en) | 1987-01-30 | 1987-01-30 | Formation of bump for bonding |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62020725A JPS63188948A (en) | 1987-01-30 | 1987-01-30 | Formation of bump for bonding |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63188948A true JPS63188948A (en) | 1988-08-04 |
| JPH0525391B2 JPH0525391B2 (en) | 1993-04-12 |
Family
ID=12035153
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62020725A Granted JPS63188948A (en) | 1987-01-30 | 1987-01-30 | Formation of bump for bonding |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63188948A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0191440A (en) * | 1987-10-02 | 1989-04-11 | Nec Corp | Bump forming equipment |
| JPH02111029A (en) * | 1988-10-20 | 1990-04-24 | Matsushita Electric Ind Co Ltd | Formation of bump and apparatus therefor |
| US5249450A (en) * | 1992-06-15 | 1993-10-05 | Micron Technology, Inc. | Probehead for ultrasonic forging |
| JPH11354561A (en) * | 1998-06-09 | 1999-12-24 | Advantest Corp | Bump and method for forming the same |
| JP2006258826A (en) * | 2006-06-20 | 2006-09-28 | Advantest Corp | Bump forming method and bump |
-
1987
- 1987-01-30 JP JP62020725A patent/JPS63188948A/en active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0191440A (en) * | 1987-10-02 | 1989-04-11 | Nec Corp | Bump forming equipment |
| JPH02111029A (en) * | 1988-10-20 | 1990-04-24 | Matsushita Electric Ind Co Ltd | Formation of bump and apparatus therefor |
| US5249450A (en) * | 1992-06-15 | 1993-10-05 | Micron Technology, Inc. | Probehead for ultrasonic forging |
| JPH11354561A (en) * | 1998-06-09 | 1999-12-24 | Advantest Corp | Bump and method for forming the same |
| JP2006258826A (en) * | 2006-06-20 | 2006-09-28 | Advantest Corp | Bump forming method and bump |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0525391B2 (en) | 1993-04-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |