JPH0191440A - Bump forming equipment - Google Patents
Bump forming equipmentInfo
- Publication number
- JPH0191440A JPH0191440A JP62249211A JP24921187A JPH0191440A JP H0191440 A JPH0191440 A JP H0191440A JP 62249211 A JP62249211 A JP 62249211A JP 24921187 A JP24921187 A JP 24921187A JP H0191440 A JPH0191440 A JP H0191440A
- Authority
- JP
- Japan
- Prior art keywords
- ball
- bump
- pole
- wire
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000007246 mechanism Effects 0.000 claims abstract description 20
- 238000007493 shaping process Methods 0.000 claims abstract description 12
- 238000005520 cutting process Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 abstract description 12
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 238000004904 shortening Methods 0.000 abstract description 2
- 238000005304 joining Methods 0.000 abstract 1
- 238000000465 moulding Methods 0.000 abstract 1
- 238000003825 pressing Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000007723 transport mechanism Effects 0.000 description 2
- 210000000078 claw Anatomy 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はICチップ、回路基板又はパッケージ等の電極
部に突起した形状のバンプを形成するバンプ形成装置に
関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a bump forming apparatus for forming protruding bumps on electrode portions of IC chips, circuit boards, packages, etc.
ICチップ、回路基板及びパッケージ等の電極部を突出
させ、インナーリードボンディング、フリップチップボ
ンディング及びハンダリフロ一方式などの接合技術を用
い1表面実装の実装密度の向上、薄型実装技術の確立が
要求されるようになってきた。従来、バンプの形成方法
としては蒸着及びメツキ技術を用いてバンプが所定の高
さになるまで数回同一工程を繰り返し製造されていた。It is required to increase the mounting density of surface mounting and establish thin mounting technology by making the electrode parts of IC chips, circuit boards, packages, etc. protrude and using bonding technologies such as inner lead bonding, flip chip bonding, and solder reflow one-way. It's starting to look like this. Conventionally, bumps have been manufactured by repeating the same process several times using vapor deposition and plating techniques until the bumps reach a predetermined height.
しかし、上述した従来の蒸着やメツキ技術を用いたバン
プの形成方法では製造工程を数回繰り返すために工程時
間が長くなり、かつ高価なものであった。しかもICチ
ップのバンプ製造においてはウェハ状態にて処理される
ので、良品、不良品の区別なくウェハ全体のICチップ
にバンプが形成され、歩留りの低い製品の場合、特に大
きさが大きいICチップの場合など良品ICチップ1個
当たりのバンプ製造費用は非常に高いものであった。However, in the above-mentioned conventional bump formation method using vapor deposition or plating techniques, the manufacturing process is repeated several times, which increases the process time and is expensive. Moreover, since IC chip bump manufacturing is processed in the wafer state, bumps are formed on the entire wafer regardless of whether it is a good product or a defective product. In some cases, the cost of manufacturing bumps per good IC chip was extremely high.
本発明の目的は前記問題点を解消したバンプ形成装置を
提供することにある。An object of the present invention is to provide a bump forming apparatus that solves the above problems.
従来の蒸着又はメツキ技術によるバンプ形成方法に対し
、本発明はポールボンディング技術における金属ワイヤ
先端に形成されるポールを電極部に接続させそのポール
を均一な高さのバンプに修正する手法を用いて容易にバ
ンプ形成を行うという相違点を有する。In contrast to conventional bump formation methods using vapor deposition or plating techniques, the present invention uses a pole bonding technique in which a pole formed at the tip of a metal wire is connected to an electrode part and the pole is modified to form a bump with a uniform height. The difference is that bump formation is easy.
本発明はICチップ、回路基板又はパッケージ等の電極
部にバンプを形成するバンプ形成装置において、ワイヤ
の先端にポール部を形成し、該ポール部を前記電極部に
接合するボンディング機構と、電極部に接合した前記ポ
ール部よりワイヤを切り取るワイヤ切断機構と、電極部
に接合した前記ポール部を加圧整形してバンプを形成す
る加圧整形機構とを有することを特徴とするバンプ形成
装置である。The present invention relates to a bump forming apparatus for forming bumps on electrode parts of IC chips, circuit boards, packages, etc., which includes a bonding mechanism for forming a pole part at the tip of a wire and bonding the pole part to the electrode part; The bump forming device is characterized by having a wire cutting mechanism that cuts the wire from the pole portion joined to the electrode portion, and a pressure shaping mechanism that presses and shapes the pole portion joined to the electrode portion to form a bump. .
以下、本発明の実施例を図により説明する。 Embodiments of the present invention will be described below with reference to the drawings.
(実施例1)
第1図において、1aはICチップ、回路基板又はパッ
ケージ等の対象物7を上下に積層して収納供給する供給
部、 lbはバンプ形成後の対象物7を上下に積層して
収納する収納部である。(Example 1) In FIG. 1, 1a is a supply unit that stores and supplies objects 7, such as IC chips, circuit boards, or packages, stacked vertically, and lb is a supply unit that stacks objects 7, such as IC chips, circuit boards, or packages, vertically. This is a storage section for storing items.
前記供給部1aと収納部1bとの間に、供給部1aから
繰り出した対象物7を爪8aで掛止しこれを搬送路8b
に沿って収納部1bに搬送する搬送機構8を設置し、前
記搬送路8bに沿って、ワイヤの先端にポール部を形成
し該ポール部を対象物7の電極部に接合するボンディン
グ機構もと、電極部に接合した前記ポール部よりワイヤ
を切り取るワイヤ切断機構M2と、電極部に接合したポ
ール部を加圧整形してバンプを形成する加圧整形機構M
3とを設置する。The object 7 fed out from the supply section 1a is caught between the supply section 1a and the storage section 1b by a claw 8a, and is carried through the conveyance path 8b.
A bonding mechanism for forming a pole portion at the tip of the wire and bonding the pole portion to the electrode portion of the object 7 is installed along the conveyance path 8b. , a wire cutting mechanism M2 that cuts the wire from the pole portion joined to the electrode portion; and a pressure shaping mechanism M that presses and shapes the pole portion joined to the electrode portion to form a bump.
3.
前記ボンディング機構町は、対象物7の電極部の位置を
検出する認識カメラ3と、ワイヤ供給機4と、電気トー
チ2と、ボンディングヘッド5とを含む、ボンディング
ヘッド5はクランプ11.キャピラリ12.超音波ホー
ン14とを含む(第2図参照)、前記ワイヤ切断機構り
はxy子テーブルからなり、ボンディングヘッド5をx
y2軸方向に移動させてポール部とワイヤとの間にクラ
ック等を生じさせる機能を有している。本実施例ではX
y子テーブルはボンディング機構町を保持しこれをxy
2軸方向に移動させてボンディング位置を位置決めする
機能を併せてもっている。The bonding mechanism includes a recognition camera 3 for detecting the position of the electrode part of the object 7, a wire feeder 4, an electric torch 2, and a bonding head 5. The bonding head 5 includes a clamp 11. Capillary 12. The wire cutting mechanism includes an ultrasonic horn 14 (see FIG. 2).
It has a function of causing cracks, etc. between the pole part and the wire by moving it in the y2-axis direction. In this example,
The y child table holds the bonding mechanism town and connects it to xy
It also has the function of positioning the bonding position by moving in two axial directions.
前記加圧整形機構M3はポール部を加圧するポール整形
板9と、ポール整形板9をZ軸すなわち上下方向に駆動
するZ軸駆動部IOとを含む。The pressure shaping mechanism M3 includes a pole shaping plate 9 that pressurizes the pole portion, and a Z-axis drive unit IO that drives the pole shaping plate 9 in the Z axis, that is, in the vertical direction.
実施例において、まず認識カメラ3により固定された対
象物7の位置を検出しさらに図示されない制御部により
演算された結果によりボンディングヘッド5をxy子テ
ーブルにより移動させ、電気トーチ2によりワイヤ先端
にポール15を形成させ、第2図のようにポール15を
図示しない加熱機構により前以て加熱されているバンプ
を形成しようとしている対象物7の電極部に接続し、そ
の後、キャピラリ12をポール上の前以て入力されてい
るある高さに上昇させてワイヤ13とキャピラリ12を
前以て入力しである量だけ往復運動させ、ポール15と
ワイヤ13との継目にクラックもしくは金属疲労を発生
させる。そしてワイヤ13とキャピラリ12がポール1
5上に位置するようにボンディングヘッド5を移動させ
、クランパ11にてワイヤをキャピラリ12とは反対方
向に保持しながら移動させ、ポール15よりワイヤ13
を切断する。さらにポール接続の終った対象物を搬送機
構8によりポール整形を行う位置まで移動させる。第4
図のようにポール15の切断部分16が尖った形状をし
ているので、Z軸駆動部10により第5図のようにポー
ル整形板9によりポール15を押圧すると、第6図のよ
うな平坦な面をもつポールバンプ17を形成することが
できる。このようにしてバンプを形成した対象物7を搬
送機構8により収納部1bに収納する。In the embodiment, first, the position of the fixed object 7 is detected by the recognition camera 3, and then the bonding head 5 is moved by an As shown in FIG. 2, the pole 15 is connected to the electrode part of the object 7 on which a bump is to be formed, which has been heated in advance by a heating mechanism (not shown), and then the capillary 12 is connected to the pole 15. The wire 13 and the capillary 12 are raised to a pre-input height and reciprocated by a pre-input amount to generate cracks or metal fatigue at the joint between the pole 15 and the wire 13. Then wire 13 and capillary 12 are connected to pole 1
The bonding head 5 is moved so that it is positioned above the capillary 12, and the wire is moved with the clamper 11 while holding it in the opposite direction to the capillary 12, and the wire 13 is moved from the pole 15.
cut. Further, the object having been connected to the pole is moved by the transport mechanism 8 to a position where pole shaping is performed. Fourth
As shown in the figure, the cut portion 16 of the pole 15 has a sharp shape, so when the pole shaping plate 9 is pressed by the Z-axis drive unit 10 as shown in FIG. 5, it becomes flat as shown in FIG. The pole bump 17 can be formed with a rounded surface. The object 7 on which the bumps have been formed in this way is stored in the storage section 1b by the transport mechanism 8.
(実施例2)
第3図は本発明の実施例2を示す図である。本実施例で
はポール15をバンプを形成しようとしている対象物7
の電極に接続し、キャピラリ12をポール15上の前以
て入力されているある高さに位置させ、ワイヤ13とキ
ャピラリ12を前以て入力しであるxyの移動量分だけ
旋回させるように移動させ、ポール15とワイヤ13と
の継目にクラックもしくは金属疲労を発生させる。そし
てワイヤ13とキャピラリ12がポール15上に位置す
るようにボンディングヘッド5を移動させ、クランパ1
1によりワイヤ13とポール15とを切断させる。この
実施例ではポール15とワイヤ13との継目にクラック
及び金属疲労が一様に発生するため、ポール15とワイ
ヤ13とを切断させた場合、切断部があまり尖った状態
にならない利点がある。(Example 2) FIG. 3 is a diagram showing Example 2 of the present invention. In this embodiment, the pole 15 is connected to the object 7 on which a bump is to be formed.
The wire 13 and the capillary 12 are connected to the electrodes, the capillary 12 is positioned at a preset height above the pole 15, and the wire 13 and the capillary 12 are rotated by a preset amount of xy movement. This causes cracks or metal fatigue to occur at the joint between the pole 15 and the wire 13. Then, the bonding head 5 is moved so that the wire 13 and the capillary 12 are positioned on the pole 15, and the clamper 1
1 to cut the wire 13 and the pole 15. In this embodiment, cracks and metal fatigue occur uniformly at the joint between the pole 15 and the wire 13, so when the pole 15 and the wire 13 are cut, there is an advantage that the cut portion does not become very sharp.
以上説明したように本発明はボンディングによりポール
を電極部に接合し、そのポールを加圧整形して平坦な面
をもつバンプを整形するため、容易にバンプを形成する
ことができ、従来のメツキ方法に比べ製造期間の短縮化
、コスト低減化を実施できる効果がある。As explained above, in the present invention, a pole is joined to an electrode part by bonding, and the pole is shaped by pressure to form a bump with a flat surface. Therefore, the bump can be easily formed, and the bump can be easily formed using conventional plating. This method has the effect of shortening the manufacturing period and reducing costs compared to other methods.
第1図は本発明の実施例を示す構成図、第2図。
第3図はポール部とワイヤ部を切断する際のキャピラリ
及びワイヤの動作状態を示す図、第4図。
第5図、第6図はボンディングされたポールよりバンプ
を形成する過程を示す図である。
1a・・・供給部 1b・・・収納部2・・
・電気トーチ 3・・・認識カメラ4・・・ワイ
ヤ供給機 5・・・ボンディングヘッド6・・・x
y子テーブル 7・・・対象物8・・・搬送機構
9・・・ポール整形板。
10・・・Z軸駆動部 11・・・クランプ12
・・・キャピラリ 13・・・ワイヤ14・・・
超音波ホーン 15・・・ポールM1・・・ボンデ
ィング機構 M2・・・ワイヤ切断機構M3・・・加圧
整形機構FIG. 1 is a configuration diagram showing an embodiment of the present invention, and FIG. FIG. 3 is a diagram showing the operating state of the capillary and wire when cutting the pole part and the wire part, and FIG. FIGS. 5 and 6 are diagrams showing the process of forming bumps from bonded poles. 1a... Supply section 1b... Storage section 2...
・Electric torch 3... Recognition camera 4... Wire feeder 5... Bonding head 6... x
Y child table 7...Target 8...Transportation mechanism
9...Pole shaping board. 10... Z-axis drive section 11... Clamp 12
...Capillary 13...Wire 14...
Ultrasonic horn 15... Pole M1... Bonding mechanism M2... Wire cutting mechanism M3... Pressure shaping mechanism
Claims (1)
にバンプを形成するバンプ形成装置において、ワイヤの
先端にポール部を形成し、該ポール部を前記電極部に接
合するボンディング機構と、電極部に接合した前記ポー
ル部よりワイヤを切り取るワイヤ切断機構と、電極部に
接合した前記ポール部を加圧整形してバンプを形成する
加圧整形機構とを有することを特徴とするバンプ形成装
置。(1) In a bump forming apparatus that forms bumps on electrode parts of IC chips, circuit boards, packages, etc., a bonding mechanism that forms a pole part at the tip of a wire and joins the pole part to the electrode part, and an electrode part A bump forming apparatus comprising: a wire cutting mechanism that cuts a wire from the pole portion joined to the electrode portion; and a pressure shaping mechanism that presses and shapes the pole portion joined to the electrode portion to form a bump.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62249211A JP2621881B2 (en) | 1987-10-02 | 1987-10-02 | Bump forming method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62249211A JP2621881B2 (en) | 1987-10-02 | 1987-10-02 | Bump forming method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0191440A true JPH0191440A (en) | 1989-04-11 |
JP2621881B2 JP2621881B2 (en) | 1997-06-18 |
Family
ID=17189565
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62249211A Expired - Fee Related JP2621881B2 (en) | 1987-10-02 | 1987-10-02 | Bump forming method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2621881B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008193637A (en) * | 2007-02-08 | 2008-08-21 | Epson Toyocom Corp | Layered electronic device and manufacturing method thereof |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62154648A (en) * | 1985-12-26 | 1987-07-09 | Toshiba Corp | Formation of bump |
JPS63117449A (en) * | 1986-11-06 | 1988-05-21 | Toshiba Corp | Formation of gold ball bump |
JPS63188948A (en) * | 1987-01-30 | 1988-08-04 | Mitsubishi Electric Corp | Formation of bump for bonding |
-
1987
- 1987-10-02 JP JP62249211A patent/JP2621881B2/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62154648A (en) * | 1985-12-26 | 1987-07-09 | Toshiba Corp | Formation of bump |
JPS63117449A (en) * | 1986-11-06 | 1988-05-21 | Toshiba Corp | Formation of gold ball bump |
JPS63188948A (en) * | 1987-01-30 | 1988-08-04 | Mitsubishi Electric Corp | Formation of bump for bonding |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008193637A (en) * | 2007-02-08 | 2008-08-21 | Epson Toyocom Corp | Layered electronic device and manufacturing method thereof |
Also Published As
Publication number | Publication date |
---|---|
JP2621881B2 (en) | 1997-06-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |