WO2020235211A1 - Pin-shaped wire forming method and wire bonding device - Google Patents

Pin-shaped wire forming method and wire bonding device Download PDF

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Publication number
WO2020235211A1
WO2020235211A1 PCT/JP2020/013339 JP2020013339W WO2020235211A1 WO 2020235211 A1 WO2020235211 A1 WO 2020235211A1 JP 2020013339 W JP2020013339 W JP 2020013339W WO 2020235211 A1 WO2020235211 A1 WO 2020235211A1
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WO
WIPO (PCT)
Prior art keywords
wire
bonding
pin
bonding tool
shaped
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PCT/JP2020/013339
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French (fr)
Japanese (ja)
Inventor
森介 手井
浩章 吉野
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株式会社新川
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Priority to JP2020552046A priority Critical patent/JP6966815B2/en
Publication of WO2020235211A1 publication Critical patent/WO2020235211A1/en

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Definitions

  • the present invention relates to a method of forming a pin-shaped wire on a substrate or a semiconductor element and a wire bonding device for forming a pin-shaped wire.
  • an object of the present invention is to provide a method for forming a pin-shaped wire that can save space and suppress damage to a semiconductor element.
  • the pin-shaped wire forming method of the present invention is a pin-shaped wire forming method for forming a pin-shaped wire at a bonding position of a substrate or a semiconductor element by using a bonding tool through which the wire is inserted, and has a predetermined length from the tip.
  • the bonding tool with the extended wire is lowered diagonally toward the reference plane, and the lower end of the wire is brought into contact with the reference plane to bend the wire in the direction along the reference plane to form a bent wire.
  • the bonding tool With the bending wire sandwiched between the process and the tip of the bonding tool and the reference plane, the bonding tool is moved laterally in the direction opposite to the extending direction of the bending wire, and the bending wire is moved up along the bonding tool.
  • An upright wire forming step of standing upright in a direction to form an upright wire a bonding step of moving a bonding tool over a bonding position of a substrate or a semiconductor element to bond the standing wire to a bonding position, and raising the bonding tool. It is characterized by having a wire cutting step of forming an upright wire into a pin-shaped wire rising from a bonding position by cutting a wire inserted through a bonding tool.
  • the reference surface may be the surface of the substrate or the surface of the semiconductor element.
  • the lower end of the wire is brought into contact with the reference surface, the wire is bent in the direction along the reference surface to form a bent wire, and the bent wire is sandwiched between the tip of the bonding tool and the reference surface for bonding. Since the tool is moved laterally to erect the bending wire upward to form the erecting wire and the formed erecting wire is bonded to the bonding position, there is no need to press the wire to a position other than the electrode of the semiconductor element, and the pin Damage to the semiconductor element when molding the shaped wire can be suppressed. Further, since the wire can be bent and erected at a position away from the bonding position, the pin-shaped wire can be formed in a small space.
  • the bonding tool in the bending wire forming step, is obliquely inclined toward the reference surface so that the angle between the moving direction of the bonding tool and the reference surface becomes smaller as the bonding tool is lowered. It may be lowered.
  • the center position of the bonding tool in the bonding step, may be shifted from the center position of the bonding position for bonding.
  • the bonding tool before the bending wire forming step, the bonding tool is lowered toward the bonding position and the wire having the tip formed into a free air ball is bonded to the bonding position to form a crimping ball.
  • Bonding includes a crimping ball forming step and a bump forming step of raising the bonding tool while feeding out a wire from the tip of the bonding tool, then folding the drawn wire onto the crimping ball and pressing it to form a bump. The process may bond the upright wire onto the bump.
  • the unwound wire is folded back on the crimping ball, the center position of the bonding tool is shifted from the bonding position, and the wire is pressed to form a bump having a recess on the upper surface.
  • the center position of the bonding tool may be shifted from the bonding position so that the root of the upright wire fits into the recessed portion of the bump.
  • the pin-shaped wire can be formed more vertically.
  • a bonding tool in which a wire having a predetermined length is extended from the tip is obliquely lowered toward the surface of a substrate or the surface of a semiconductor element, and the wire is formed.
  • the bent wire may be formed by bringing the lower end of the wire into contact with the bump and bending the wire in a direction along the surface of the substrate or the surface of the semiconductor element.
  • the pin-shaped wire can be formed in a smaller space.
  • the wire bonding apparatus of the present invention is a wire bonding apparatus that forms a pin-shaped wire at a bonding position of a substrate or a semiconductor element using a bonding tool through which a wire is inserted, and includes a control unit for adjusting the bonding tool position.
  • the control unit lowers the bonding tool, which extends a wire of a predetermined length from the tip, diagonally toward the reference plane, brings the lower end of the wire into contact with the reference plane, and directs the wire along the reference plane.
  • the bonding tool is moved laterally in the direction opposite to the extending direction of the bending wire with the bending wire sandwiched between the tip of the bonding tool and the reference surface in the bending wire forming process of bending to and forming the bending wire.
  • the present invention can provide a method for forming a pin-shaped wire that can save space and suppress damage to a semiconductor element.
  • the wire bonding apparatus 1 includes a base 2, an XY table 3, a bonding head 4, a torch electrode 5, a capillary 10, an ultrasonic horn 6, a clamper 15, a wire tensioner 8, and a rotation. It includes a spool 9, a bonding stage 60, a heater 61, and a control unit 70.
  • the plane parallel to the semiconductor element 50 (for example, the semiconductor die) to be bonded, the lead frame, or the substrate is the XY plane
  • the direction perpendicular to the XY plane is the Z direction.
  • the tip position of the capillary 10 is specified by the X coordinate, the Y coordinate, and the spatial coordinates (X, Y, Z) represented by the Z coordinate.
  • the base 2 is configured by slidably mounting the XY table 3.
  • the XY table 3 is a moving device capable of moving the capillary 10 to a predetermined position on the XY plane based on a drive signal from the control unit 70.
  • the bonding head 4 is integrally formed with a bonding arm (not shown), and the tip 12 of the capillary 10 attached to the tip of the ultrasonic horn 6 based on a drive signal from the control unit 70 is a work such as a substrate. It is a moving device that holds the surface of 62 so as to be movable in the Z direction so as to come into contact with the surface of the 62.
  • the ultrasonic horn 6 is a rod-shaped member composed of a terminal portion, a flange portion, a horn portion, and a tip portion from the end to the tip.
  • An ultrasonic oscillator 7 that vibrates in response to a drive signal from the control unit 70 is arranged at the terminal portion.
  • the flange portion is resonably attached to the bonding head 4 via the bonding arm at a position where it becomes a node of ultrasonic vibration.
  • the horn portion is an arm that extends longer than the diameter of the terminal portion, and has a structure that expands the amplitude of vibration by the ultrasonic oscillator 7 and transmits it to the tip portion.
  • the tip portion is a mounting portion that holds the capillary 10 interchangeably.
  • the ultrasonic horn 6 has a resonance structure that resonates with the vibration of the ultrasonic oscillator 7 as a whole, so that the ultrasonic oscillator 7 and the flange are located at the vibration node at the time of resonance, and the capillary 10 is located at the antinode of the vibration. It is composed of various structures. With these configurations, the ultrasonic horn 6 functions as a transducer that converts an electrical drive signal into mechanical vibration.
  • Capillary 10 is one of the bonding tools used for bonding.
  • the capillary 10 is provided with an insertion hole, and the wire 20 used for bonding is inserted through the capillary 10.
  • the capillary 10 is replaceably attached to the tip of the ultrasonic horn 6.
  • the clamper 15 is provided with a piezoelectric element that opens and closes based on a control signal of the control unit 70, and is configured so that the wire 20 can be gripped and released at a predetermined timing.
  • the wire tensioner 8 is configured to be able to apply an appropriate tension to the wire 20 during bonding by inserting the wire 20 and freely changing the tension with respect to the wire 20 based on the control signal of the control unit 70. There is.
  • the rotary spool 9 holds the reel around which the wire 20 is wound in an interchangeable manner, and is configured to feed the wire 20 according to the tension applied through the wire tensioner 8.
  • the material of the wire 20 is selected from the ease of processing and the low electrical resistance. Usually, gold (Au), silver (Ag), aluminum (Al), copper (Cu) and the like are used.
  • the torch electrode 5 is connected to a high voltage power supply (not shown) via a discharge stabilizing resistor (not shown), sparks (discharges) are generated based on a control signal from the control unit 70, and the heat of the sparks causes the capillary 10 to generate sparks.
  • a free air ball 30 can be formed on the lower end 22 of the wire 20 extending from the tip 12.
  • the bonding stage 60 is a stage on which a work 62 (for example, a substrate or a semiconductor element 50) for forming a pin-shaped wire 25 (see FIGS. 6 and 10) is placed on a machined surface.
  • a heater 61 is provided below the machined surface of the bonding stage 60 so that the work 62 can be heated to a temperature suitable for bonding.
  • a reference surface 40 is arranged on the upper surface of the bonding stage 60.
  • the control unit 70 is configured to be able to output various control signals that control the wire bonding device 1 based on a predetermined software program. Specifically, the control unit 70 performs the following control as an example without limitation.
  • the spatial position (X, Y, Z) of the tip 12 of the capillary 10 is specified based on the detection signal from the position detection sensor (not shown), and the tip 12 of the capillary 10 is moved to the spatial position defined by the above program.
  • the drive signal to be driven is output to the XY table 3 and the bonding head 4.
  • the control unit 70 adjusts the position of the tip 12 of the capillary 10.
  • the configuration of the wire bonding device 1 is an example, and is not limited to the above.
  • the moving device for moving in the X direction, the Y direction, or the Z direction may be provided on the bonding stage 60 side, or may be provided on both the wire bonding device 1 side and the bonding stage 60 side.
  • the pin-shaped wire forming method of the embodiment includes four steps of a bending wire forming step, an upright wire forming step, a bonding step, and a wire cutting step.
  • the control unit 70 first executes the bending wire forming step shown in step S101 of FIG. As shown in FIG. 3A, the control unit 70 extends a tail wire 21 having a predetermined length from the tip 12 of the capillary 10. To extend the tail wire 21, for example, the control unit 70 bonds the wire 20 to an arbitrary position, opens the clamper 15 and extends the wire 20 from the tip 12 of the capillary 10 by a predetermined length, and then extends the clamper 15. The wire 20 may be cut and formed at the bonding point by raising the capillary 10 and the clamper 15 as closing. Further, a plurality of clampers 15 may be provided, and the wire 20 may be extended by a predetermined length from the tip 12 of the capillary 10 by combining the opening and closing of the plurality of clampers 15 and the vertical movement of the capillary 10.
  • the control unit 70 lowers the tip 12 of the capillary 10 diagonally toward the reference surface 40 with the clamper 15 closed.
  • the reference surface 40 may be a flat surface arranged on the upper surface of the bonding stage 60 as shown in FIG. 1, or may be a surface of a substrate or a semiconductor element 50 mounted on the bonding stage 60. You may. In the following example, the reference surface 40 will be described as a plane arranged on the upper surface of the bonding stage 60.
  • the control unit 70 obliquely lowers the tip 12 of the capillary 10 while bringing the lower end 22 of the tail wire 21 extending from the tip 12 into contact with the reference surface 40.
  • the folding wire forming step of bending the tail wire 21 to form the folding wire 23 is executed.
  • the control unit 70 is connected to the alternate long and short dash line 91 so that the angle formed by the reference surface 40 is the angle ⁇ 1 with the clamper 15 closed.
  • the tip 12 of the capillary 10 is moved diagonally downward along the line.
  • the control unit 70 brings the lower end 22 of the tail wire 21 into contact with the reference surface 40, and moves the tip 12 of the capillary 10 diagonally downward while bending the tail wire 21 in the direction along the reference surface 40. ..
  • control unit 70 makes an angle ⁇ 2 with the reference surface 40 smaller than the angle ⁇ 1 with the clamper 15 closed.
  • the tip 12 of the capillary 10 is moved diagonally downward along the alternate long and short dash line 92, and the tail wire 21 is further bent in the direction along the reference plane 40.
  • the control unit 70 makes an angle ⁇ 3 with the reference surface 40 smaller than the angle ⁇ 2 with the clamper 15 closed.
  • the tip 12 of the capillary 10 is moved diagonally downward along the alternate long and short dash line 93, and the tail wire 21 is further bent in the direction along the reference plane 40.
  • the tail wire 21 is bent at a substantially right angle until the lower end 22 of the tail wire 21 is in the direction along the reference surface 40 to form the bent wire 23.
  • the control unit 70 sets the tip 12 of the capillary 10 to the reference surface 40 so that the angles ⁇ 1 to ⁇ 3 formed by the moving direction of the tip 12 of the capillary 10 and the reference surface 40 become smaller as the capillary 10 is lowered.
  • the bending wire 23 is formed by lowering it diagonally toward it. After molding the bending wire 23 as shown in FIG. 3H, the control unit 70 ends the bending wire forming step.
  • control unit 70 executes the upright wire forming step as shown in step S102 of FIG.
  • the control unit 70 laterally moves the tip 12 of the capillary 10 with the bending wire 23 sandwiched between the tip 12 of the capillary 10 and the reference surface 40.
  • the bending wire 23 is erected upward to form the erection wire 24.
  • the tip 12 of the capillary 10 is shown by the arrow 94 in FIG. 4A with the clamper 15 closed.
  • the root portion of the bending wire 23 is sandwiched between the tip 12 of the capillary 10 and the reference surface 40 by lowering the capillary 10 slightly.
  • the control unit 70 laterally moves the tip 12 of the capillary 10 in the direction opposite to the extending direction of the bending wire 23 as shown by an arrow 95 in FIG. 4B. ..
  • the arrow 96 in FIG. 4B the bending wire 23 rises upward as the capillary 10 moves laterally, and the standing wire 24 is formed.
  • control unit 70 ends the upright wire forming step after forming the upright wire 24.
  • control unit 70 executes the bonding step as shown in step S103 of FIG.
  • the control unit 70 moves the capillary 10 from the reference surface 40 onto the electrode 51, which is the bonding position of the semiconductor element 50, and moves the standing wire 24 of the electrode 51. Bond on top.
  • the control unit 70 moves the capillary 10 from the reference surface 40 onto the electrode 51 of the semiconductor element 50 which is the bonding position. Then, the control unit 70 sets the position of the center line 19 in the Z direction of the capillary 10 to a position shifted laterally by a distance d from the position of the center line 52 in the Z direction of the electrode 51. Then, with the clamper 15 closed, the control unit 70 lowers the capillary 10 as shown by an arrow 99 in FIG. 5B to bond the root of the standing wire 24 onto the electrode 51.
  • the upright wire 24 When the upright wire 24 is bonded onto the electrode 51, the upright wire 24 stands up substantially in the vertical direction as shown by the arrow 98 in FIG. 5 (b), and substantially along the center line 52 at the center position of the electrode 51. A pin-shaped wire 25 extending in a vertical direction is formed.
  • control unit 70 bonds the upright wire 24 to form the pin-shaped wire 25 to form the pin-shaped wire 25
  • the control unit 70 ends the bonding step and executes the wire cutting step as shown in step S104 of FIG.
  • control unit 70 raises the capillary 10 with the clamper 15 open to extend the tail wire 21 from the tip 12 by a predetermined length. Then, as shown by a solid line in FIG. 6, the control unit 70 closes the clamper 15 and raises the clamper 15 and the capillary 10 as shown by an arrow 100, and the lower end 22 of the tail wire 21 inserted into the capillary 10 is inserted. To disconnect. As a result, the control unit 70 forms an independent pin-shaped wire 25 on the center line 52 of the electrode 51.
  • the control unit 70 moves the capillary 10 onto the reference surface 40. Then, the control unit 70 determines whether or not all the pin-shaped wires 25 have been formed in step S105 of FIG. 2, and if it determines NO in step S105 of FIG. 2, returns to step S101 of FIG. Step S101 of FIG. 2, the bending wire forming step shown in FIGS. 3A to 3H, step S102 of FIG. 2, the standing wire forming step shown in FIGS. 4A and 4B, FIG. Step S103, the bonding step shown in FIGS. 5A and 5B, and the wire cutting step shown in Step S104 of FIG. 2 and FIG. 6 are repeatedly executed. Then, if YES is determined in step S105 of FIG. 2, the molding of the pin-shaped wire 25 is completed.
  • the lower end 22 of the tail wire 21 is brought into contact with the reference surface 40, the tail wire 21 is bent in the direction along the reference surface 40 to form the bent wire 23, and the capillary 10 is formed.
  • the folding wire 23 is sandwiched between the tip 12 and the reference surface 40, the capillary 10 is moved laterally, the bending wire 23 is raised upward to form the standing wire 24, and the formed standing wire 24 is placed at the bonding position. Since the wire 20 is bonded to the electrode 51 of the semiconductor element 50, it is not necessary to press the wire 20 to a position other than the electrode 51 of the semiconductor element 50 as in the prior art, and the semiconductor element 50 when forming the pin-shaped wire 25 is formed. Damage can be suppressed. Further, since the tail wire 21 can be bent and erected at a position away from the electrode 51 of the semiconductor element 50, the pin-shaped wire 25 can be formed even when the surface area of the semiconductor element 50 is small.
  • the angles ⁇ 1 to ⁇ 3 formed by the moving direction of the tip 12 of the capillary 10 and the reference surface 40 become smaller as the capillary 10 is lowered.
  • the bent wire 23 may be formed by lowering it diagonally.
  • the control unit 70 has described that the position of the center line 19 of the capillary 10 is shifted from the position of the center line 52 of the electrode 51 to perform bonding, but the control unit 70 is not limited to this. Bonding may be performed by aligning the position of the center line 19 of the capillary 10 with the position of the center line 52 of the electrode 51.
  • control unit 70 is shown in steps S201 of FIG. 7 and (a) to (b) of FIG. 8 before the bending wire forming step shown in step S101 of FIG.
  • the crimping ball forming step and the bump forming step shown in steps S202 of FIG. 7 and (c) to (e) of FIG. 8 are executed.
  • the control unit 70 moves the capillary 10 in the vicinity of the torch electrode 5 as shown in FIG. 8A, and the tip of the torch electrode 5 and the capillary 10 A discharge is generated between the tail wire 21 and the tail wire 21 extending from the 12 to form the tail wire 21 into a free air ball 30.
  • the free air ball 30 is held by a chamfer portion 13 at the tip of a hole provided in the center of the capillary 10.
  • the control unit 70 aligns the position of the center line 19 in the Z direction of the capillary 10 with the center line 52 in the Z direction of the electrode 51 of the semiconductor element 50, and opens the clamper 15.
  • the capillary 10 is lowered as shown by the arrow 101.
  • the control unit 70 bonds the free air ball 30 onto the electrode 51 of the semiconductor element 50 with the capillary 10.
  • the free air ball 30 is formed into a pedestal-shaped crimping ball 31 in which the peripheral portion is pressed by the tip 12 to form a disk shape, and the central portion is pressed by the chamfer portion 13 and protrudes slightly upward from the disk-shaped peripheral portion. ..
  • control unit 70 executes the bump forming steps shown in steps S202 of FIG. 7 and (c) to (e) of FIG.
  • the control unit 70 raises the capillary 10 with the clamper 15 open and wires from the tip 12. After extending 20, the capillary 10 is moved laterally by a distance e, and then the capillary 10 is slightly lowered. Next, as shown by the arrow 103 in FIG. 8D, the control unit 70 raises the capillary 10 to its original height, and then raises the capillary 10 in the direction opposite to the case shown in FIG. 8C. The capillary 10 is lowered by moving it laterally by a distance (e + f).
  • control unit 70 folds the extended wire 20 left and right on the electrode 51 of the semiconductor element 50, and presses the folded wire 20 on the lower wire 20 with the tip 12 in FIG.
  • a bump 35 is formed in which one is raised and the other pressed by the tip 12 is a recessed portion 36.
  • the control unit 70 raises the capillary 10 with the clamper 15 open, as shown by the broken line in FIG. 8 (e), and has a predetermined length from the tip 12 of the capillary 10.
  • the tail wire 21 is extended.
  • the control unit 70 raises the capillary 10 and the clamper 15 as shown by the arrow 104 in FIG. 8 with the clamper 15 closed, and the tail wire 21
  • the control unit 70 brings the lower end 22 of the tail wire 21 extending from the tip 12 into contact with the surface of the semiconductor element 50. While moving the tip 12 of the capillary 10 diagonally downward, the tail wire 21 is bent in the direction along the surface of the semiconductor element 50 to form the bent wire 23, and the bending wire forming step is executed.
  • the bending wire forming step is the same as that of the above-described embodiment except that the lower end 22 is brought into contact with the surface of the semiconductor element 50.
  • the control unit 70 is the root portion of the bending wire 23 between the tip 12 of the capillary 10 and the surface of the semiconductor element 50.
  • the tip 12 of the capillary 10 is laterally moved by sandwiching the above, and the standing wire forming step of forming the standing wire 24 is executed.
  • the upright wire forming step is the same as that of the above-described embodiment except that the bent wire 23 is sandwiched between the tip 12 of the capillary 10 and the surface of the semiconductor element 50.
  • control unit 70 executes the bonding step as shown in step S103 of FIG. 7 and (a) and (b) of FIG.
  • the control unit 70 moves the capillary 10 onto the electrode 51 of the semiconductor element 50, and positions the center line 19 of the capillary 10 in the Z direction in the Z of the electrode 51.
  • the position is displaced laterally by a distance g from the position of the center line 52 in the direction.
  • the distance g is a distance such that the root 24a of the upright wire 24 fits into the recessed portion 36 of the bump 35.
  • the control unit 70 lowered the capillary 10 with the clamper 15 closed, and formed the root 24a of the standing wire 24 on the upper surface of the bump 35. Bond over the recess 36. As shown in FIG. 9B, the root 24a of the upright wire 24 is formed into a shape that follows the shape of the upper surface of the bump 35 and is bonded onto the bump 35.
  • the upright wire 24 When the upright wire 24 is bonded onto the bump 35 of the electrode 51, the upright wire 24 stands up in a substantially vertical direction as shown by an arrow 107 in FIG. 9B, and the center line 52 at the center position of the electrode 51. A pin-shaped wire 25 extending in a direction substantially along the line is formed.
  • control unit 70 bonds the standing wire 24 to form the pin-shaped wire 25 to form the pin-shaped wire 25
  • the control unit 70 ends the bonding step and executes the wire cutting step shown in step S104 of FIG.
  • the control unit 70 raises the capillary 10 with the clamper 15 open as shown by the broken line in FIG. 10, and extends the tail wire 21 from the tip 12 by a predetermined length. Then, as shown by a solid line in FIG. 10, the control unit 70 closes the clamper 15 and raises the clamper 15 and the capillary 10 as shown by an arrow 108, and the lower end 22 of the tail wire 21 inserted into the capillary 10 is inserted. To disconnect. As a result, the control unit 70 forms an independent pin-shaped wire 25 on the bump 35 of the electrode 51.
  • the control unit 70 moves the capillary 10 onto the semiconductor element 50. Then, the control unit 70 determines whether or not all the pin-shaped wires 25 have been formed in step S105 of FIG. 7, and if it determines NO in step S105 of FIG. 7, returns to step S201 of FIG. Step S201 of FIG. 7, crimp ball forming step shown in FIGS. 8A and 8B, step S202 of FIG. 7, bump forming step shown in FIGS. 8C to 8E, FIG. Step S101, the bending wire forming step shown in FIGS. 3A to 3H, step S102 of FIG. 7, the standing wire forming step shown in FIGS. 4A and 4B, step S103 of FIG. 7, FIG.
  • step S104 and FIG. 10 of FIG. 7 are repeatedly executed. Then, if YES is determined in step S105 of FIG. 2, the molding of the pin-shaped wire 25 is completed.
  • the crimping ball 31 and the bump 35 are formed on the electrode 51 of the semiconductor element 50, and the upright wire 24 is bonded onto the bump 35 to form the pin-shaped wire 25. Therefore, the force applied to the semiconductor element 50 in the step of forming the pin-shaped wire 25 is small, and the pin-shaped wire 25 can be formed while more preferably suppressing damage to the semiconductor element 50. Further, since the bent wire 23 is formed by bringing the lower end 22 of the tail wire 21 into contact with the surface of the semiconductor element 50, the pin-shaped wire 25 can be formed in a small space.
  • the control unit 70 has described the tail wire 21 as being bent by bringing the lower end 22 of the tail wire 21 into contact with the surface of the semiconductor element 50 in the wire forming step.
  • the lower end 22 may be brought into contact with the bump 35 and bent.
  • the pin-shaped wire 25 can be formed in less space.
  • control unit 70 may bend the tail wire 21 by bringing the lower end 22 into contact with the surface of the substrate or the reference surface 40.
  • the pin-shaped wire 25 may be formed not only on the electrode 51 of the semiconductor element 50 but also on the electrode of the substrate.
  • 1 wire bonding device 2 base, 3 XY table, 4 bonding head, 5 torch electrode, 6 ultrasonic horn, 7 ultrasonic oscillator, 8 wire tensioner, 9 rotating spool, 10 capillary, 12 tip, 13 chamfer part, 15 Clamper, 19, 52 center line, 20 wire, 21 tail wire, 22 lower end, 23 bending wire, 24 standing wire, 25 pin-shaped wire, 30 free air ball, 31 crimping ball, 35 bump, 36 recess, 40 reference surface , 50 semiconductor elements, 51 electrodes, 60 bonding stages, 61 heaters, 62 workpieces, 70 control units.

Abstract

The present invention includes: a bent wire forming step (S101) in which a capillary having a tail wire protruding from a tip end thereof is lowered diagonally toward a reference surface, and the tail wire is bent in a direction along the reference surface to form a bent wire; an erect wire forming step (S102) in which the capillary is moved laterally while the bent wire is in a state of being held between the reference surface and the tip end of the capillary, so that the bent wire is made to stand upward to form an erect wire; a bonding step (S103) in which the erect wire is bonded in a bonding position; and a wire cutting step (S104) in which the wire inserted through the capillary is cut to make the erect wire into a pin-shaped wire.

Description

ピン状ワイヤ成形方法及びワイヤボンディング装置Pin-shaped wire forming method and wire bonding equipment
　本発明は、基板又は半導体素子の上にピン状のワイヤを成形する方法及びピン状ワイヤを成形するワイヤボンディング装置に関する。 The present invention relates to a method of forming a pin-shaped wire on a substrate or a semiconductor element and a wire bonding device for forming a pin-shaped wire.
　近年、半導体パッケージを積層した半導体装置や、半導体素子を積層した半導体装置が用いられている。このような三次元実装半導体装置では、基板あるいは半導体素子の電極の上に所定の高さを有するピン状のワイヤを成形する必要がある。 In recent years, semiconductor devices in which semiconductor packages are laminated and semiconductor devices in which semiconductor elements are laminated have been used. In such a three-dimensional mounting semiconductor device, it is necessary to form a pin-shaped wire having a predetermined height on a substrate or an electrode of a semiconductor element.
　このような、ピン状ワイヤを成形する方法としては、ボンディング位置にボールボンディングした後に、ボンディング位置と異なる位置にワイヤをルーピングしてワイヤの側面を押圧してワイヤの側面に切欠きを成形し、その後、ワイヤをボンディング位置に直立させ、切欠き位置でワイヤを切断する方法が提案されている（例えば、特許文献１参照）。 As a method of forming such a pin-shaped wire, after ball bonding at the bonding position, the wire is looped at a position different from the bonding position and the side surface of the wire is pressed to form a notch on the side surface of the wire. After that, a method has been proposed in which the wire is made upright at the bonding position and the wire is cut at the notched position (see, for example, Patent Document 1).
　また、同様にワイヤの側面に薄肉部を成形し、その後、ワイヤをボンディング位置に直立させた後、ボンディングツールを横方向に移動させてからワイヤを切断する方法が提案されている（例えば、特許文献２参照）。 Similarly, a method has been proposed in which a thin portion is formed on the side surface of the wire, then the wire is erected at the bonding position, and then the bonding tool is moved laterally to cut the wire (for example, a patent). Reference 2).
特許第６２９７５５３号公報Japanese Patent No. 6297553 特許第５６８６９１２号公報Japanese Patent No. 5686912
　特許文献１，２に記載された従来技術の方法は、ボンディング位置にボールボンディングした後に、ボンディング位置と異なる位置にワイヤをルーピングしてワイヤの側面を押圧してワイヤの側面に切欠き或いは薄肉部を成形し、ワイヤを直立させた後にこの切欠き或いは薄肉部でワイヤを切断してピン状ワイヤを成形するものである。ワイヤの側面に切欠き或いは薄肉部を成形するには、ある程度の力でワイヤを半導体素子の電極以外の位置に押圧する必要がある。このため、半導体素子の電極の上に特許文献１，２に記載された従来技術でピン状ワイヤを成形する場合に、半導体素子を損傷してしまう可能性があった。また、ボンディング位置の近傍に切欠き部あるいは薄肉部を成形するスペースが必要となることから、小型で電極ピッチの狭い半導体素子には適用することが難しいという問題があった。 In the method of the prior art described in Patent Documents 1 and 2, after ball bonding at a bonding position, the wire is looped at a position different from the bonding position to press the side surface of the wire, and a notch or a thin portion is formed on the side surface of the wire. Is formed, the wire is made upright, and then the wire is cut at the notch or the thin wall portion to form a pin-shaped wire. In order to form a notch or a thin portion on the side surface of the wire, it is necessary to press the wire to a position other than the electrode of the semiconductor element with a certain force. Therefore, when the pin-shaped wire is formed on the electrode of the semiconductor element by the conventional technique described in Patent Documents 1 and 2, there is a possibility that the semiconductor element is damaged. Further, since a space for forming a notch portion or a thin-walled portion is required in the vicinity of the bonding position, there is a problem that it is difficult to apply to a small semiconductor element having a narrow electrode pitch.
　そこで、本発明は、省スペースで半導体素子の損傷を抑制可能なピン状ワイヤの成形方法を提供することを目的とする。 Therefore, an object of the present invention is to provide a method for forming a pin-shaped wire that can save space and suppress damage to a semiconductor element.
　本発明のピン状ワイヤ成形方法は、ワイヤが挿通されたボンディングツールを用いて基板又は半導体素子のボンディング位置にピン状のワイヤを成形するピン状ワイヤ成形方法であって、先端から所定の長さのワイヤを延出させたボンディングツールを基準面に向かって斜めに下降させて、ワイヤの下端を基準面に接触させてワイヤを基準面に沿った方向に折り曲げて折り曲げワイヤを成形する折り曲げワイヤ成形工程と、ボンディングツールの先端と基準面との間に折り曲げワイヤを挟みこんだ状態で、折り曲げワイヤの延びる方向と反対方向に向かってボンディングツールを横移動させて折り曲げワイヤをボンディングツールに沿って上方向に起立させて起立ワイヤを成形する起立ワイヤ成形工程と、ボンディングツールを基板又は半導体素子のボンディング位置の上に移動させて起立ワイヤをボンディング位置にボンディングするボンディング工程と、ボンディングツールを上昇させてボンディングツールに挿通されたワイヤを切断することによって起立ワイヤをボンディング位置から立ち上がるピン状ワイヤとするワイヤ切断工程と、を有することを特徴とする。ここで、基準面は、基板の表面又は半導体素子の表面であってもよい。 The pin-shaped wire forming method of the present invention is a pin-shaped wire forming method for forming a pin-shaped wire at a bonding position of a substrate or a semiconductor element by using a bonding tool through which the wire is inserted, and has a predetermined length from the tip. The bonding tool with the extended wire is lowered diagonally toward the reference plane, and the lower end of the wire is brought into contact with the reference plane to bend the wire in the direction along the reference plane to form a bent wire. With the bending wire sandwiched between the process and the tip of the bonding tool and the reference plane, the bonding tool is moved laterally in the direction opposite to the extending direction of the bending wire, and the bending wire is moved up along the bonding tool. An upright wire forming step of standing upright in a direction to form an upright wire, a bonding step of moving a bonding tool over a bonding position of a substrate or a semiconductor element to bond the standing wire to a bonding position, and raising the bonding tool. It is characterized by having a wire cutting step of forming an upright wire into a pin-shaped wire rising from a bonding position by cutting a wire inserted through a bonding tool. Here, the reference surface may be the surface of the substrate or the surface of the semiconductor element.
　このように、ワイヤの下端を基準面に接触させてワイヤを基準面に沿った方向に折り曲げて折り曲げワイヤを成形し、ボンディングツールの先端と基準面との間に折り曲げたワイヤを挟みこんでボンディングツールを横移動させて折り曲げワイヤを上方向に起立させて起立ワイヤを成形し、成形した起立ワイヤをボンディング位置にボンディングするので、ワイヤを半導体素子の電極以外の位置に押圧する必要がなく、ピン状ワイヤを成形する場合の半導体素子の損傷を抑制できる。また、ボンディング位置と離れた位置でワイヤの折り曲げ、起立を行うことができるので、少ないスペースでピン状ワイヤの成形を行うことができる。 In this way, the lower end of the wire is brought into contact with the reference surface, the wire is bent in the direction along the reference surface to form a bent wire, and the bent wire is sandwiched between the tip of the bonding tool and the reference surface for bonding. Since the tool is moved laterally to erect the bending wire upward to form the erecting wire and the formed erecting wire is bonded to the bonding position, there is no need to press the wire to a position other than the electrode of the semiconductor element, and the pin Damage to the semiconductor element when molding the shaped wire can be suppressed. Further, since the wire can be bent and erected at a position away from the bonding position, the pin-shaped wire can be formed in a small space.
　本発明のピン状ワイヤ成形方法において、折り曲げワイヤ成形工程は、ボンディングツールを下降させるにつれてボンディングツールの移動方向と基準面とのなす角度が小さくなるように、ボンディングツールを基準面に向かって斜めに下降させること、としてもよい。 In the pin-shaped wire forming method of the present invention, in the bending wire forming step, the bonding tool is obliquely inclined toward the reference surface so that the angle between the moving direction of the bonding tool and the reference surface becomes smaller as the bonding tool is lowered. It may be lowered.
　　これにより、スムーズにワイヤを折り曲げることができる。 This allows the wire to be bent smoothly.
　本発明のピン状ワイヤ成形方法において、ボンディング工程は、ボンディングツールの中心位置をボンディング位置の中心位置からずらしてボンディングしてもよい。 In the pin-shaped wire forming method of the present invention, in the bonding step, the center position of the bonding tool may be shifted from the center position of the bonding position for bonding.
　　これにより、ボンディング位置の中心にピン状ワイヤを成形することができる。 This makes it possible to form a pin-shaped wire at the center of the bonding position.
　本発明のピン状ワイヤ成形方法において、折り曲げワイヤ成形工程の前に、ボンディングツールをボンディング位置に向かって下降させて先端をフリーエアボールに成形したワイヤをボンディング位置にボンディングして圧着ボールを成形する圧着ボール成形工程と、ボンディングツールの先端からワイヤを繰り出しながらボンディングツールを上昇させた後、繰り出したワイヤを圧着ボールの上に折り返し、押圧してバンプを成形するバンプ成形工程と、を含み、ボンディング工程は、起立ワイヤをバンプの上にボンディングしてもよい。 In the pin-shaped wire forming method of the present invention, before the bending wire forming step, the bonding tool is lowered toward the bonding position and the wire having the tip formed into a free air ball is bonded to the bonding position to form a crimping ball. Bonding includes a crimping ball forming step and a bump forming step of raising the bonding tool while feeding out a wire from the tip of the bonding tool, then folding the drawn wire onto the crimping ball and pressing it to form a bump. The process may bond the upright wire onto the bump.
　圧着ボール、バンプの上に起立ワイヤをボンディングするので、半導体素子の損傷をより好適に抑制することができる。 Since the upright wire is bonded on the crimping ball and bump, damage to the semiconductor element can be suppressed more preferably.
　本発明のピン状ワイヤ成形方法において、バンプ成形工程は、繰り出したワイヤを圧着ボールの上に折り返し、ボンディングツールの中心位置をボンディング位置からずらしてワイヤを押圧して上面に凹み部を有するバンプを成形し、ボンディング工程は、起立ワイヤの根元がバンプの凹み部に合うようにボンディングツールの中心位置をボンディング位置からずらしてボンディングしてもよい。 In the pin-shaped wire forming method of the present invention, in the bump forming step, the unwound wire is folded back on the crimping ball, the center position of the bonding tool is shifted from the bonding position, and the wire is pressed to form a bump having a recess on the upper surface. In the molding and bonding step, the center position of the bonding tool may be shifted from the bonding position so that the root of the upright wire fits into the recessed portion of the bump.
　このように、起立ワイヤの根元をバンプの凹み部に合わせてボンディングすることにより、ピン状ワイヤをより垂直に成形することができる。 In this way, by bonding the base of the upright wire to the recessed portion of the bump, the pin-shaped wire can be formed more vertically.
　本発明のピン状ワイヤ成形方法において、折り曲げワイヤ成形工程は、先端から所定の長さのワイヤを延出させたボンディングツールを基板の表面又は半導体素子の表面に向かって斜めに下降させて、ワイヤの下端をバンプに接触させてワイヤを基板の表面又は半導体素子の表面に沿った方向に折り曲げて折り曲げワイヤを成形してもよい。 In the pin-shaped wire forming method of the present invention, in the bending wire forming step, a bonding tool in which a wire having a predetermined length is extended from the tip is obliquely lowered toward the surface of a substrate or the surface of a semiconductor element, and the wire is formed. The bent wire may be formed by bringing the lower end of the wire into contact with the bump and bending the wire in a direction along the surface of the substrate or the surface of the semiconductor element.
　これにより、より少ないスペースでピン状ワイヤの成形を行うことができる。 As a result, the pin-shaped wire can be formed in a smaller space.
　本発明のワイヤボンディング装置は、ワイヤが挿通されたボンディングツールを用いて基板又は半導体素子のボンディング位置にピン状のワイヤを成形するワイヤボンディング装置であって、ボンディングツール位置を調整する制御部を備え、制御部が、先端から所定の長さのワイヤを延出させたボンディングツールを基準面に向かって斜めに下降させて、ワイヤの下端を基準面に接触させてワイヤを基準面に沿った方向に折り曲げて折り曲げワイヤを成形する折り曲げワイヤ成形工程と、ボンディングツールの先端と基準面との間に折り曲げワイヤを挟みこんだ状態で、折り曲げワイヤの延びる方向と反対方向に向かってボンディングツールを横移動させて折り曲げワイヤを上方向に起立させて起立ワイヤを成形する起立ワイヤ成形工程と、ボンディングツールを基板又は半導体素子のボンディング位置の上に移動させて起立ワイヤをボンディング位置にボンディングするボンディング工程と、ボンディングツールを上昇させてボンディングツールに挿通されたワイヤを切断することによって起立ワイヤをボンディング位置から立ち上がるピン状ワイヤとするワイヤ切断工程と、を実行することを特徴とする。 The wire bonding apparatus of the present invention is a wire bonding apparatus that forms a pin-shaped wire at a bonding position of a substrate or a semiconductor element using a bonding tool through which a wire is inserted, and includes a control unit for adjusting the bonding tool position. , The control unit lowers the bonding tool, which extends a wire of a predetermined length from the tip, diagonally toward the reference plane, brings the lower end of the wire into contact with the reference plane, and directs the wire along the reference plane. The bonding tool is moved laterally in the direction opposite to the extending direction of the bending wire with the bending wire sandwiched between the tip of the bonding tool and the reference surface in the bending wire forming process of bending to and forming the bending wire. The erecting wire forming step of forming the erecting wire by erecting the bending wire upward, and the bonding step of moving the bonding tool over the bonding position of the substrate or the semiconductor element to bond the erecting wire to the bonding position. It is characterized in that a wire cutting step of raising the bonding tool to cut the wire inserted through the bonding tool to form a pin-shaped wire that rises from the bonding position is performed.
　本発明は、省スペースで半導体素子の損傷を抑制可能なピン状ワイヤの成形方法を提供することができる。 The present invention can provide a method for forming a pin-shaped wire that can save space and suppress damage to a semiconductor element.
実施形態のワイヤボンディング装置の構成を示す系統図である。It is a system diagram which shows the structure of the wire bonding apparatus of embodiment. 実施形態のワイヤボンディング装置が実行するピン状ワイヤ成形方法を示すフローチャートである。It is a flowchart which shows the pin-shaped wire forming method performed by the wire bonding apparatus of embodiment. 実施形態のワイヤボンディング装置の折り曲げワイヤ成形工程の動作を示す説明図である。It is explanatory drawing which shows the operation of the bending wire forming process of the wire bonding apparatus of embodiment. 実施形態のワイヤボンディング装置の起立ワイヤ成形工程の動作を示す説明図である。It is explanatory drawing which shows the operation of the standing wire forming process of the wire bonding apparatus of embodiment. 実施形態のワイヤボンディング装置のボンディング工程の動作を示す説明図である。It is explanatory drawing which shows the operation of the bonding process of the wire bonding apparatus of embodiment. 実施形態のワイヤボンディング装置のワイヤ切断工程の動作を示す説明図である。It is explanatory drawing which shows the operation of the wire cutting process of the wire bonding apparatus of embodiment. 実施形態のワイヤボンディング装置が実行する他のピン状ワイヤ成形方法を示すフローチャートである。It is a flowchart which shows the other pin-shaped wire forming method performed by the wire bonding apparatus of embodiment. 実施形態のワイヤボンディング装置の圧着ボール成形工程の動作とバンプ成形工程の動作とを示す説明図である。It is explanatory drawing which shows the operation of the crimping ball forming process and the operation of the bump forming process of the wire bonding apparatus of embodiment. 実施形態のワイヤボンディング装置のボンディング工程の他の動作を示す説明図である。It is explanatory drawing which shows the other operation of the bonding process of the wire bonding apparatus of embodiment. 実施形態のワイヤボンディング装置のワイヤ切断工程の他の動作を示す説明図である。It is explanatory drawing which shows the other operation of the wire cutting process of the wire bonding apparatus of embodiment. 実施形態のワイヤボンディング装置の折り曲げワイヤ成形工程の他の動作を示す説明図である。It is explanatory drawing which shows the other operation of the bending wire forming process of the wire bonding apparatus of embodiment.
　以下、図面を参照しながら実施形態のワイヤボンディング装置１について説明する。図１に示すように、本実施形態に係るワイヤボンディング装置１は、基台２、ＸＹテーブル３、ボンディングヘッド４、トーチ電極５、キャピラリ１０、超音波ホーン６、クランパ１５、ワイヤテンショナ８、回転スプール９、ボンディングステージ６０、ヒータ６１、制御部７０を備えて構成される。 Hereinafter, the wire bonding apparatus 1 of the embodiment will be described with reference to the drawings. As shown in FIG. 1, the wire bonding apparatus 1 according to the present embodiment includes a base 2, an XY table 3, a bonding head 4, a torch electrode 5, a capillary 10, an ultrasonic horn 6, a clamper 15, a wire tensioner 8, and a rotation. It includes a spool 9, a bonding stage 60, a heater 61, and a control unit 70.
　以下の実施形態では、ボンディング対象となる半導体素子５０（例えば半導体ダイ）やリードフレーム或いは基板に平行な平面をＸＹ平面とし、ＸＹ平面に垂直な方向をＺ方向とする。キャピラリ１０の先端位置は、Ｘ座標、Ｙ座標、およびＺ座標で表される空間座標（Ｘ，Ｙ，Ｚ）で特定される。 In the following embodiments, the plane parallel to the semiconductor element 50 (for example, the semiconductor die) to be bonded, the lead frame, or the substrate is the XY plane, and the direction perpendicular to the XY plane is the Z direction. The tip position of the capillary 10 is specified by the X coordinate, the Y coordinate, and the spatial coordinates (X, Y, Z) represented by the Z coordinate.
　基台２は、ＸＹテーブル３を摺動可能に載置して構成されている。ＸＹテーブル３は、制御部７０からの駆動信号に基づいてキャピラリ１０をＸＹ平面で所定の位置に移動可能な移動装置である。 The base 2 is configured by slidably mounting the XY table 3. The XY table 3 is a moving device capable of moving the capillary 10 to a predetermined position on the XY plane based on a drive signal from the control unit 70.
　ボンディングヘッド４は、ボンディングアーム（図示しない）と一体に形成されており、制御部７０からの駆動信号に基づいて超音波ホーン６の先端部に取付けられたキャピラリ１０の先端１２が基板などのワーク６２の表面に接離するようにＺ方向に移動可能に保持する移動装置である。 The bonding head 4 is integrally formed with a bonding arm (not shown), and the tip 12 of the capillary 10 attached to the tip of the ultrasonic horn 6 based on a drive signal from the control unit 70 is a work such as a substrate. It is a moving device that holds the surface of 62 so as to be movable in the Z direction so as to come into contact with the surface of the 62.
　超音波ホーン６は、末端から先端にかけて、末端部、フランジ部、ホーン部、および先端部の各部で構成された棒状部材である。末端部は、制御部７０からの駆動信号に応じて振動する超音波発振器７が配置されている。フランジ部は超音波振動の節となる位置でボンディングアームを介してボンディングヘッド４に共振可能に取付けられている。ホーン部は、末端部の径に比べて長く延在するアームであり、超音波発振器７による振動の振幅を拡大して先端部に伝える構造を備えている。先端部はキャピラリ１０を交換可能に保持する取付部となっている。超音波ホーン６は全体として超音波発振器７の振動に共鳴する共振構造を備えており、共振時の振動の節に超音波発振器７およびフランジが位置し、振動の腹にキャピラリ１０が位置するような構造に構成されている。これらの構成により、超音波ホーン６は電気的な駆動信号を機械的な振動に変換するトランスデューサとして機能する。 The ultrasonic horn 6 is a rod-shaped member composed of a terminal portion, a flange portion, a horn portion, and a tip portion from the end to the tip. An ultrasonic oscillator 7 that vibrates in response to a drive signal from the control unit 70 is arranged at the terminal portion. The flange portion is resonably attached to the bonding head 4 via the bonding arm at a position where it becomes a node of ultrasonic vibration. The horn portion is an arm that extends longer than the diameter of the terminal portion, and has a structure that expands the amplitude of vibration by the ultrasonic oscillator 7 and transmits it to the tip portion. The tip portion is a mounting portion that holds the capillary 10 interchangeably. The ultrasonic horn 6 has a resonance structure that resonates with the vibration of the ultrasonic oscillator 7 as a whole, so that the ultrasonic oscillator 7 and the flange are located at the vibration node at the time of resonance, and the capillary 10 is located at the antinode of the vibration. It is composed of various structures. With these configurations, the ultrasonic horn 6 functions as a transducer that converts an electrical drive signal into mechanical vibration.
　キャピラリ１０は、ボンディングに用いられるボンディングツールの一つである。キャピラリ１０には、挿通穴が設けられており、ボンディングに使用するワイヤ２０が挿通されている。キャピラリ１０は超音波ホーン６の先端部に交換可能に取付けられている。 Capillary 10 is one of the bonding tools used for bonding. The capillary 10 is provided with an insertion hole, and the wire 20 used for bonding is inserted through the capillary 10. The capillary 10 is replaceably attached to the tip of the ultrasonic horn 6.
　クランパ１５は、制御部７０の制御信号に基づいて開閉動作を行う圧電素子を備えており、所定のタイミングでワイヤ２０を把持したり解放したりすることが可能なように構成されている。 The clamper 15 is provided with a piezoelectric element that opens and closes based on a control signal of the control unit 70, and is configured so that the wire 20 can be gripped and released at a predetermined timing.
　ワイヤテンショナ８は、ワイヤ２０が挿通され、制御部７０の制御信号に基づいてワイヤ２０に対する張力を自在に変更することにより、ボンディング中のワイヤ２０に適度な張力を与えることが可能に構成されている。 The wire tensioner 8 is configured to be able to apply an appropriate tension to the wire 20 during bonding by inserting the wire 20 and freely changing the tension with respect to the wire 20 based on the control signal of the control unit 70. There is.
　回転スプール９は、ワイヤ２０が巻き回されたリールを交換可能に保持しており、ワイヤテンショナ８を通じて及ぼされる張力に応じてワイヤ２０を繰り出すように構成されている。なお、ワイヤ２０の材料は、加工の容易さと電気抵抗の低さから選択される。通常、金（Ａｕ）、銀（Ａｇ）、アルミニウム（Ａｌ）又は銅（Ｃｕ）等が用いられる。 The rotary spool 9 holds the reel around which the wire 20 is wound in an interchangeable manner, and is configured to feed the wire 20 according to the tension applied through the wire tensioner 8. The material of the wire 20 is selected from the ease of processing and the low electrical resistance. Usually, gold (Au), silver (Ag), aluminum (Al), copper (Cu) and the like are used.
　トーチ電極５は、図示しない放電安定化抵抗を介して図示しない高電圧電源に接続されており、制御部７０からの制御信号に基づいてスパーク（放電）を発生し、スパークの熱によってキャピラリ１０の先端１２から繰り出されているワイヤ２０の下端２２にフリーエアボール３０を成形可能に構成されている。 The torch electrode 5 is connected to a high voltage power supply (not shown) via a discharge stabilizing resistor (not shown), sparks (discharges) are generated based on a control signal from the control unit 70, and the heat of the sparks causes the capillary 10 to generate sparks. A free air ball 30 can be formed on the lower end 22 of the wire 20 extending from the tip 12.
　ボンディングステージ６０は、ピン状ワイヤ２５（図６、図１０参照）を成形するためのワーク６２（例えば基板又は半導体素子５０など）を加工面に載置するステージである。ボンディングステージ６０の加工面の下部にはヒータ６１が設けられており、ワーク６２をボンディングに適する温度にまで加熱可能に構成されている。また、ボンディングステージ６０の上面には、基準面４０が配置されている。 The bonding stage 60 is a stage on which a work 62 (for example, a substrate or a semiconductor element 50) for forming a pin-shaped wire 25 (see FIGS. 6 and 10) is placed on a machined surface. A heater 61 is provided below the machined surface of the bonding stage 60 so that the work 62 can be heated to a temperature suitable for bonding. A reference surface 40 is arranged on the upper surface of the bonding stage 60.
　制御部７０は、所定のソフトウェアプログラムに基づきワイヤボンディング装置１を制御する各種制御信号を出力可能に構成されている。具体的には、制御部７０は限定のない例示として以下の制御を行う。 The control unit 70 is configured to be able to output various control signals that control the wire bonding device 1 based on a predetermined software program. Specifically, the control unit 70 performs the following control as an example without limitation.
　（１）図示しない位置検出センサからの検出信号に基づいてキャピラリ１０の先端１２の空間位置（Ｘ，Ｙ，Ｚ）を特定し、上記プログラムにより規定される空間位置へキャピラリ１０の先端１２を移動させる駆動信号をＸＹテーブル３およびボンディングヘッド４に出力する。これにより、制御部７０は、キャピラリ１０の先端１２の位置を調整する。 (1) The spatial position (X, Y, Z) of the tip 12 of the capillary 10 is specified based on the detection signal from the position detection sensor (not shown), and the tip 12 of the capillary 10 is moved to the spatial position defined by the above program. The drive signal to be driven is output to the XY table 3 and the bonding head 4. As a result, the control unit 70 adjusts the position of the tip 12 of the capillary 10.
　（２）ボンディング点へのボンディング時に超音波振動を発生させる制御信号を超音波ホーン６の超音波発振器７に出力すること。 (2) Output a control signal that generates ultrasonic vibration at the time of bonding to the bonding point to the ultrasonic oscillator 7 of the ultrasonic horn 6.
　（３）上記プログラムにより規定されるワイヤ２０の繰り出し状況となるようにクランパ１５の開閉動作を制御する制御信号を出力すること。具体的にワイヤ２０を繰り出す際にはクランパ１５を解放状態とし、ワイヤ２０に屈曲点を成形する場合または切断する場合にはクランパ１５を閉状態とする。 (3) Output a control signal that controls the opening / closing operation of the clamper 15 so that the wire 20 is unwound as defined by the above program. Specifically, the clamper 15 is released when the wire 20 is unwound, and the clamper 15 is closed when the bending point is formed or cut on the wire 20.
　（４）テールワイヤ２１の下端２２にフリーエアボール３０を成形する時にトーチ電極５に放電させるための制御信号を出力すること。 (4) Output a control signal for discharging to the torch electrode 5 when the free air ball 30 is formed on the lower end 22 of the tail wire 21.
　なお、上記ワイヤボンディング装置１の構成は例示であり、上記に限定されない。例えば、Ｘ方向、Ｙ方向、またはＺ方向に移動させる移動装置はボンディングステージ６０側に設けてもよく、またワイヤボンディング装置１側およびボンディングステージ６０側の双方に設けることもできる。 The configuration of the wire bonding device 1 is an example, and is not limited to the above. For example, the moving device for moving in the X direction, the Y direction, or the Z direction may be provided on the bonding stage 60 side, or may be provided on both the wire bonding device 1 side and the bonding stage 60 side.
　次に、図２～図６を参照しながら実施形態のワイヤボンディング装置１が実行するピン状ワイヤ２５（図６，図１０参照）の成形方法について説明する。図２のステップＳ１０１～Ｓ１０４に示すように、実施形態のピン状ワイヤ成形方法は、折り曲げワイヤ成形工程、起立ワイヤ成形工程、ボンディング工程、ワイヤ切断工程の４つの工程を含んでいる。 Next, a method of forming the pin-shaped wire 25 (see FIGS. 6 and 10) executed by the wire bonding apparatus 1 of the embodiment will be described with reference to FIGS. 2 to 6. As shown in steps S101 to S104 of FIG. 2, the pin-shaped wire forming method of the embodiment includes four steps of a bending wire forming step, an upright wire forming step, a bonding step, and a wire cutting step.
　制御部７０は、最初に図２のステップＳ１０１に示す折り曲げワイヤ成形工程を実行する。制御部７０は、図３の（ａ）に示すように、キャピラリ１０の先端１２から所定の長さのテールワイヤ２１を延出させる。テールワイヤ２１の延出は、例えば、制御部７０がワイヤ２０を任意の位置にボンディングし、クランパ１５を開としてキャピラリ１０の先端１２からワイヤ２０を所定の長さだけ繰り出した後に、クランパ１５を閉としてキャピラリ１０とクランパ１５とを上昇させてボンディング点でワイヤ２０を切断して成形してもよい。また、複数のクランパ１５を備え、複数のクランパ１５の開閉とキャピラリ１０の上下動作とを組み合わせて、キャピラリ１０の先端１２からワイヤ２０を所定の長さだけ繰り出してもよい。 The control unit 70 first executes the bending wire forming step shown in step S101 of FIG. As shown in FIG. 3A, the control unit 70 extends a tail wire 21 having a predetermined length from the tip 12 of the capillary 10. To extend the tail wire 21, for example, the control unit 70 bonds the wire 20 to an arbitrary position, opens the clamper 15 and extends the wire 20 from the tip 12 of the capillary 10 by a predetermined length, and then extends the clamper 15. The wire 20 may be cut and formed at the bonding point by raising the capillary 10 and the clamper 15 as closing. Further, a plurality of clampers 15 may be provided, and the wire 20 may be extended by a predetermined length from the tip 12 of the capillary 10 by combining the opening and closing of the plurality of clampers 15 and the vertical movement of the capillary 10.
　次に、制御部７０は、図３の（ａ）～（ｈ）に示すように、クランパ１５を閉とした状態でキャピラリ１０の先端１２を基準面４０に向かって斜めに下降させていく。ここで、基準面４０は、図１に示すようなボンディングステージ６０の上面に配置された平面であっても良いし、ボンディングステージ６０の上に載置された基板や半導体素子５０の表面であってもよい。以下の例では、基準面４０は、ボンディングステージ６０の上面に配置された平面であるとして説明する。 Next, as shown in FIGS. 3A to 3H, the control unit 70 lowers the tip 12 of the capillary 10 diagonally toward the reference surface 40 with the clamper 15 closed. Here, the reference surface 40 may be a flat surface arranged on the upper surface of the bonding stage 60 as shown in FIG. 1, or may be a surface of a substrate or a semiconductor element 50 mounted on the bonding stage 60. You may. In the following example, the reference surface 40 will be described as a plane arranged on the upper surface of the bonding stage 60.
　制御部７０は、図３の（ａ）～（ｈ）に示すように、先端１２から延出させたテールワイヤ２１の下端２２を基準面４０に接触させながらキャピラリ１０の先端１２を斜め下方向に移動させてテールワイヤ２１を折り曲げて折り曲げワイヤ２３を成形する折り曲げワイヤ成形工程を実行する。 As shown in FIGS. 3A to 3H, the control unit 70 obliquely lowers the tip 12 of the capillary 10 while bringing the lower end 22 of the tail wire 21 extending from the tip 12 into contact with the reference surface 40. The folding wire forming step of bending the tail wire 21 to form the folding wire 23 is executed.
　まず、制御部７０は、図３の（ａ）～（ｃ）に示すように、クランパ１５を閉とした状態で、基準面４０とのなす角度が角度θ１となるように、一点鎖線９１に沿ってキャピラリ１０の先端１２を斜め下方向へ移動させていく。この際、制御部７０は、テールワイヤ２１の下端２２を基準面４０に接触させ、テールワイヤ２１を基準面４０に沿った方向に折り曲げながらキャピラリ１０の先端１２を斜め下方向に移動させていく。 First, as shown in FIGS. 3A to 3C, the control unit 70 is connected to the alternate long and short dash line 91 so that the angle formed by the reference surface 40 is the angle θ1 with the clamper 15 closed. The tip 12 of the capillary 10 is moved diagonally downward along the line. At this time, the control unit 70 brings the lower end 22 of the tail wire 21 into contact with the reference surface 40, and moves the tip 12 of the capillary 10 diagonally downward while bending the tail wire 21 in the direction along the reference surface 40. ..
　次に、制御部７０は、図３の（ｃ）～（ｅ）に示すように、クランパ１５を閉とした状態で、基準面４０とのなす角度が角度θ１よりも小さい角度θ２となるように、一点鎖線９２に沿ってキャピラリ１０の先端１２を斜め下方向へ移動させ、テールワイヤ２１を更に基準面４０に沿った方向に折り曲げていく。 Next, as shown in FIGS. 3C to 3E, the control unit 70 makes an angle θ2 with the reference surface 40 smaller than the angle θ1 with the clamper 15 closed. The tip 12 of the capillary 10 is moved diagonally downward along the alternate long and short dash line 92, and the tail wire 21 is further bent in the direction along the reference plane 40.
　更に、制御部７０は、図３の（ｅ）～（ｈ）に示すように、クランパ１５を閉とした状態で、基準面４０とのなす角度が角度θ２よりも小さい角度θ３となるように、一点鎖線９３に沿ってキャピラリ１０の先端１２を斜め下方向へ移動させ、テールワイヤ２１を更に基準面４０に沿った方向に折り曲げていく。そして、図３の（ｈ）に示すように、テールワイヤ２１の下端２２が基準面４０の沿った方向となるまでテールワイヤ２１を略直角に折り曲げて折り曲げワイヤ２３を成形する。 Further, as shown in FIGS. 3 (e) to 3 (h), the control unit 70 makes an angle θ3 with the reference surface 40 smaller than the angle θ2 with the clamper 15 closed. The tip 12 of the capillary 10 is moved diagonally downward along the alternate long and short dash line 93, and the tail wire 21 is further bent in the direction along the reference plane 40. Then, as shown in FIG. 3H, the tail wire 21 is bent at a substantially right angle until the lower end 22 of the tail wire 21 is in the direction along the reference surface 40 to form the bent wire 23.
　このように、制御部７０は、キャピラリ１０を下降させるにつれてキャピラリ１０の先端１２の移動方向と基準面４０とのなす角度θ１～θ３が小さくなるように、キャピラリ１０の先端１２を基準面４０に向かって斜めに下降させて折り曲げワイヤ２３を成形する。制御部７０は、図３の（ｈ）に示すように折り曲げワイヤ２３を成形したら折り曲げワイヤ成形工程を終了する。 In this way, the control unit 70 sets the tip 12 of the capillary 10 to the reference surface 40 so that the angles θ1 to θ3 formed by the moving direction of the tip 12 of the capillary 10 and the reference surface 40 become smaller as the capillary 10 is lowered. The bending wire 23 is formed by lowering it diagonally toward it. After molding the bending wire 23 as shown in FIG. 3H, the control unit 70 ends the bending wire forming step.
　次に、制御部７０は、図２のステップＳ１０２に示すように起立ワイヤ成形工程を実行する。制御部７０は、図４の（ａ），（ｂ）に示すように、折り曲げワイヤ２３をキャピラリ１０の先端１２と基準面４０との間に挟み込んだ状態でキャピラリ１０の先端１２を横移動させて折り曲げワイヤ２３を上方向に起立させて起立ワイヤ２４を成形する。 Next, the control unit 70 executes the upright wire forming step as shown in step S102 of FIG. As shown in FIGS. 4A and 4B, the control unit 70 laterally moves the tip 12 of the capillary 10 with the bending wire 23 sandwiched between the tip 12 of the capillary 10 and the reference surface 40. The bending wire 23 is erected upward to form the erection wire 24.
　制御部７０は、折り曲げワイヤ成形工程を終了したら、図４の（ａ）に示すように、クランパ１５を閉とした状態で、キャピラリ１０の先端１２を図４の（ａ）の矢印９４に示すように僅かに下降させて、キャピラリ１０の先端１２と基準面４０との間に折り曲げワイヤ２３の根元部分を挟み込む。そして、制御部７０は、クランパ１５を閉とした状態で、折り曲げワイヤ２３の延びる方向と反対方向に向かって図４の（ｂ）に矢印９５で示すようにキャピラリ１０の先端１２を横移動させる。すると、図４の（ｂ）の矢印９６に示すように示すように、キャピラリ１０が横移動するに従って折り曲げワイヤ２３は上方向に起立し、起立ワイヤ２４が成形される。 When the control unit 70 finishes the bending wire forming step, as shown in FIG. 4A, the tip 12 of the capillary 10 is shown by the arrow 94 in FIG. 4A with the clamper 15 closed. The root portion of the bending wire 23 is sandwiched between the tip 12 of the capillary 10 and the reference surface 40 by lowering the capillary 10 slightly. Then, with the clamper 15 closed, the control unit 70 laterally moves the tip 12 of the capillary 10 in the direction opposite to the extending direction of the bending wire 23 as shown by an arrow 95 in FIG. 4B. .. Then, as shown by the arrow 96 in FIG. 4B, the bending wire 23 rises upward as the capillary 10 moves laterally, and the standing wire 24 is formed.
　制御部７０は、図４の（ｂ）に示すように、起立ワイヤ２４を成形したら起立ワイヤ成形工程を終了する。 As shown in FIG. 4B, the control unit 70 ends the upright wire forming step after forming the upright wire 24.
　次に制御部７０は、図２のステップＳ１０３に示すようにボンディング工程を実行する。制御部７０は、図５の（ａ），（ｂ）に示すように、キャピラリ１０を基準面４０から半導体素子５０のボンディング位置である電極５１の上に移動させて起立ワイヤ２４を電極５１の上にボンディングする。 Next, the control unit 70 executes the bonding step as shown in step S103 of FIG. As shown in FIGS. 5A and 5B, the control unit 70 moves the capillary 10 from the reference surface 40 onto the electrode 51, which is the bonding position of the semiconductor element 50, and moves the standing wire 24 of the electrode 51. Bond on top.
　制御部７０は、図５の（ａ）に示すように、キャピラリ１０を基準面４０からボンディング位置である半導体素子５０の電極５１の上に移動させる。そして、制御部７０は、キャピラリ１０のＺ方向の中心線１９の位置を電極５１のＺ方向の中心線５２の位置から横方向に距離ｄだけずらした位置とする。そして、制御部７０は、クランパ１５を閉とした状態で、図５の（ｂ）中の矢印９９に示すようにキャピラリ１０を下降させて起立ワイヤ２４の根元を電極５１の上にボンディングする。 As shown in FIG. 5A, the control unit 70 moves the capillary 10 from the reference surface 40 onto the electrode 51 of the semiconductor element 50 which is the bonding position. Then, the control unit 70 sets the position of the center line 19 in the Z direction of the capillary 10 to a position shifted laterally by a distance d from the position of the center line 52 in the Z direction of the electrode 51. Then, with the clamper 15 closed, the control unit 70 lowers the capillary 10 as shown by an arrow 99 in FIG. 5B to bond the root of the standing wire 24 onto the electrode 51.
　起立ワイヤ２４を電極５１の上にボンディングすると、起立ワイヤ２４は、図５の（ｂ）中の矢印９８に示すように略垂直方向に起立し、電極５１の中心位置で中心線５２に略沿った方向に延びるピン状ワイヤ２５が成形される。 When the upright wire 24 is bonded onto the electrode 51, the upright wire 24 stands up substantially in the vertical direction as shown by the arrow 98 in FIG. 5 (b), and substantially along the center line 52 at the center position of the electrode 51. A pin-shaped wire 25 extending in a vertical direction is formed.
　制御部７０は、起立ワイヤ２４をボンディングしてピン状ワイヤ２５を成形したらボンディング工程を終了し、図２のステップＳ１０４に示すようにワイヤ切断工程を実行する。 When the control unit 70 bonds the upright wire 24 to form the pin-shaped wire 25, the control unit 70 ends the bonding step and executes the wire cutting step as shown in step S104 of FIG.
　制御部７０は、図６に破線で示すようにクランパ１５を開にした状態でキャピラリ１０を上昇させて先端１２からテールワイヤ２１を所定の長さだけ延出させる。そして、制御部７０は、図６に実線で示すように、クランパ１５を閉としてクランパ１５とキャピラリ１０とを矢印１００のように上昇させて、キャピラリ１０に挿通しているテールワイヤ２１の下端２２を切断する。これにより、制御部７０は、電極５１の中心線５２の上に独立したピン状ワイヤ２５を成形する。 As shown by the broken line in FIG. 6, the control unit 70 raises the capillary 10 with the clamper 15 open to extend the tail wire 21 from the tip 12 by a predetermined length. Then, as shown by a solid line in FIG. 6, the control unit 70 closes the clamper 15 and raises the clamper 15 and the capillary 10 as shown by an arrow 100, and the lower end 22 of the tail wire 21 inserted into the capillary 10 is inserted. To disconnect. As a result, the control unit 70 forms an independent pin-shaped wire 25 on the center line 52 of the electrode 51.
　制御部７０は、ワイヤ切断工程を終了したら、キャピラリ１０を基準面４０の上に移動させる。そして、制御部７０は、図２のステップＳ１０５で全てのピン状ワイヤ２５の成形をしたかどうかを判断し、図２のステップＳ１０５でＮＯと判断した場合には、図２のステップＳ１０１に戻って、図２のステップＳ１０１、図３の（ａ）～（ｈ）に示す折り曲げワイヤ成形工程、図２のステップＳ１０２、図４の（ａ），（ｂ）に示す起立ワイヤ成形工程、図２のステップＳ１０３、図５の（ａ），（ｂ）に示すボンディング工程、図２のステップＳ１０４、図６に示すワイヤ切断工程を繰り返し実行する。そして、図２のステップＳ１０５でＹＥＳと判断したらピン状ワイヤ２５の成形を終了する。 After completing the wire cutting process, the control unit 70 moves the capillary 10 onto the reference surface 40. Then, the control unit 70 determines whether or not all the pin-shaped wires 25 have been formed in step S105 of FIG. 2, and if it determines NO in step S105 of FIG. 2, returns to step S101 of FIG. Step S101 of FIG. 2, the bending wire forming step shown in FIGS. 3A to 3H, step S102 of FIG. 2, the standing wire forming step shown in FIGS. 4A and 4B, FIG. Step S103, the bonding step shown in FIGS. 5A and 5B, and the wire cutting step shown in Step S104 of FIG. 2 and FIG. 6 are repeatedly executed. Then, if YES is determined in step S105 of FIG. 2, the molding of the pin-shaped wire 25 is completed.
　以上説明した実施形態のピン状ワイヤ成形方法は、テールワイヤ２１の下端２２を基準面４０に接触させ、テールワイヤ２１を基準面４０に沿った方向に折り曲げて折り曲げワイヤ２３を成形し、キャピラリ１０の先端１２と基準面４０との間に折り曲げワイヤ２３を挟みこんでキャピラリ１０を横移動させ、折り曲げワイヤ２３を上方向に起立させて起立ワイヤ２４を成形し、成形した起立ワイヤ２４をボンディング位置である半導体素子５０の電極５１にボンディングするので、従来技術のように、ワイヤ２０を半導体素子５０の電極５１以外の位置に押圧する必要がなく、ピン状ワイヤ２５を成形する場合の半導体素子５０の損傷を抑制できる。また、半導体素子５０の電極５１と離れた位置でテールワイヤ２１の折り曲げ、起立を行うことができるので、半導体素子５０の表面の面積が小さい場合でもピン状ワイヤ２５の成形を行うことができる。 In the pin-shaped wire forming method of the embodiment described above, the lower end 22 of the tail wire 21 is brought into contact with the reference surface 40, the tail wire 21 is bent in the direction along the reference surface 40 to form the bent wire 23, and the capillary 10 is formed. The folding wire 23 is sandwiched between the tip 12 and the reference surface 40, the capillary 10 is moved laterally, the bending wire 23 is raised upward to form the standing wire 24, and the formed standing wire 24 is placed at the bonding position. Since the wire 20 is bonded to the electrode 51 of the semiconductor element 50, it is not necessary to press the wire 20 to a position other than the electrode 51 of the semiconductor element 50 as in the prior art, and the semiconductor element 50 when forming the pin-shaped wire 25 is formed. Damage can be suppressed. Further, since the tail wire 21 can be bent and erected at a position away from the electrode 51 of the semiconductor element 50, the pin-shaped wire 25 can be formed even when the surface area of the semiconductor element 50 is small.
　以上、説明した実施形態のピン状ワイヤ成形方法では、折り曲げワイヤ成形工程において、キャピラリ１０を下降させるにつれてキャピラリ１０の先端１２の移動方向と基準面４０とのなす角度θ１～θ３が小さくなるように、キャピラリ１０の先端１２を基準面４０に向かって斜めに下降させて折り曲げワイヤ２３を成形することとして説明したが、これに限らず、一定の角度でキャピラリ１０の先端１２を基準面４０に向かって斜めに下降させて折り曲げワイヤ２３を成形してもよい。 In the pin-shaped wire forming method of the embodiment described above, in the bending wire forming step, the angles θ1 to θ3 formed by the moving direction of the tip 12 of the capillary 10 and the reference surface 40 become smaller as the capillary 10 is lowered. , The explanation has been made that the tip 12 of the capillary 10 is obliquely lowered toward the reference surface 40 to form the bending wire 23, but the present invention is not limited to this, and the tip 12 of the capillary 10 is directed toward the reference surface 40 at a constant angle. The bent wire 23 may be formed by lowering it diagonally.
　また、ボンディング工程において、制御部７０は、キャピラリ１０の中心線１９の位置を電極５１の中心線５２の位置からずらしてボンディングを行うこととして説明したが、これに限らず、制御部７０は、キャピラリ１０の中心線１９の位置を電極５１の中心線５２の位置に合わせてボンディングをしてもよい。 Further, in the bonding step, the control unit 70 has described that the position of the center line 19 of the capillary 10 is shifted from the position of the center line 52 of the electrode 51 to perform bonding, but the control unit 70 is not limited to this. Bonding may be performed by aligning the position of the center line 19 of the capillary 10 with the position of the center line 52 of the electrode 51.
　次に図７～図１０、及び、図３、図４を参照しながら他の実施形態のピン状ワイヤ成形方法について説明する。先に図２～図６を参照して説明した実施形態と同様の部分については説明を省略する。 Next, the pin-shaped wire forming method of another embodiment will be described with reference to FIGS. 7 to 10 and FIGS. 3 and 4. The description of the same parts as those of the embodiment described above with reference to FIGS. 2 to 6 will be omitted.
　他の実施形態のピン状ワイヤ成形方法において、制御部７０は、図７のステップＳ１０１に示す折り曲げワイヤ成形工程の前に、図７のステップＳ２０１、図８の（ａ）～（ｂ）に示す圧着ボール成形工程と、図７のステップＳ２０２、図８の（ｃ）～（ｅ）に示すバンプ成形工程とを実行する。 In the pin-shaped wire forming method of another embodiment, the control unit 70 is shown in steps S201 of FIG. 7 and (a) to (b) of FIG. 8 before the bending wire forming step shown in step S101 of FIG. The crimping ball forming step and the bump forming step shown in steps S202 of FIG. 7 and (c) to (e) of FIG. 8 are executed.
　図２のステップＳ２０１に示す圧着ボール成形工程において、制御部７０は、図８の（ａ）に示すように、キャピラリ１０をトーチ電極５の近傍に移動させて、トーチ電極５とキャピラリ１０の先端１２から延出させたテールワイヤ２１との間に放電を発生させてテールワイヤ２１をフリーエアボール３０に成形する。フリーエアボール３０は、キャピラリ１０の中心に設けられた穴の先端のチャンファ部１３で保持される。そして、制御部７０は、図８の（ｂ）に示すように、キャピラリ１０のＺ方向の中心線１９の位置を半導体素子５０の電極５１のＺ方向の中心線５２に合わせ、クランパ１５を開とした状態で、矢印１０１に示すようにキャピラリ１０を下降させる。そして、制御部７０は、キャピラリ１０でフリーエアボール３０を半導体素子５０の電極５１の上にボンディングする。フリーエアボール３０は、周辺部が先端１２に押圧されて円盤状となり、中央部がチャンファ部１３に押圧されて円盤状の周辺部より少し上に突出した台座形状の圧着ボール３１に成形される。 In the crimping ball forming step shown in step S201 of FIG. 2, the control unit 70 moves the capillary 10 in the vicinity of the torch electrode 5 as shown in FIG. 8A, and the tip of the torch electrode 5 and the capillary 10 A discharge is generated between the tail wire 21 and the tail wire 21 extending from the 12 to form the tail wire 21 into a free air ball 30. The free air ball 30 is held by a chamfer portion 13 at the tip of a hole provided in the center of the capillary 10. Then, as shown in FIG. 8B, the control unit 70 aligns the position of the center line 19 in the Z direction of the capillary 10 with the center line 52 in the Z direction of the electrode 51 of the semiconductor element 50, and opens the clamper 15. In this state, the capillary 10 is lowered as shown by the arrow 101. Then, the control unit 70 bonds the free air ball 30 onto the electrode 51 of the semiconductor element 50 with the capillary 10. The free air ball 30 is formed into a pedestal-shaped crimping ball 31 in which the peripheral portion is pressed by the tip 12 to form a disk shape, and the central portion is pressed by the chamfer portion 13 and protrudes slightly upward from the disk-shaped peripheral portion. ..
　図８の（ｂ）に示すように、制御部７０は、圧着ボール３１の成形が終了したら、図７のステップＳ２０２、図８の（ｃ）～（ｅ）に示すバンプ成形工程を実行する。 As shown in FIG. 8B, when the molding of the crimping ball 31 is completed, the control unit 70 executes the bump forming steps shown in steps S202 of FIG. 7 and (c) to (e) of FIG.
　図２のステップＳ２０２に示すバンプ成形工程において、制御部７０は、図８の（ｃ）の矢印１０２に示すように、クランパ１５を開とした状態で、キャピラリ１０を上昇させて先端１２からワイヤ２０を延出させた後、横方向に距離ｅだけ移動させ、その後わずかにキャピラリ１０を下降させる。次に、図８の（ｄ）の矢印１０３に示すように、制御部７０は、キャピラリ１０を元の高さまで上昇させた後、図８の（ｃ）に示す場合と反対方向にキャピラリ１０を距離（ｅ＋ｆ）だけ横方向に移動させ、キャピラリ１０を下降させる。この動作により制御部７０は、延出させたワイヤ２０を半導体素子５０の電極５１の上で左右に折り返し、折り返したワイヤ２０を下側のワイヤ２０の上に先端１２で押圧し、図８の（ｄ）に示すように、一方が盛り上がり、先端１２で押圧した他方が凹み部３６となるバンプ３５を成形する。 In the bump forming step shown in step S202 of FIG. 2, as shown by the arrow 102 of FIG. 8C, the control unit 70 raises the capillary 10 with the clamper 15 open and wires from the tip 12. After extending 20, the capillary 10 is moved laterally by a distance e, and then the capillary 10 is slightly lowered. Next, as shown by the arrow 103 in FIG. 8D, the control unit 70 raises the capillary 10 to its original height, and then raises the capillary 10 in the direction opposite to the case shown in FIG. 8C. The capillary 10 is lowered by moving it laterally by a distance (e + f). By this operation, the control unit 70 folds the extended wire 20 left and right on the electrode 51 of the semiconductor element 50, and presses the folded wire 20 on the lower wire 20 with the tip 12 in FIG. As shown in (d), a bump 35 is formed in which one is raised and the other pressed by the tip 12 is a recessed portion 36.
　制御部７０は、バンプ３５を成形したら、図８の（ｅ）に破線で示すように、クランパ１５を開とした状態で、キャピラリ１０を上昇させてキャピラリ１０の先端１２から所定の長さのテールワイヤ２１を延出させる。そして、制御部７０は、図８の（ｅ）に実線で示すように、クランパ１５を閉とした状態でキャピラリ１０とクランパ１５とを図８に示す矢印１０４のように上昇させてテールワイヤ２１の下端２２を切断する。 After the bump 35 is formed, the control unit 70 raises the capillary 10 with the clamper 15 open, as shown by the broken line in FIG. 8 (e), and has a predetermined length from the tip 12 of the capillary 10. The tail wire 21 is extended. Then, as shown by the solid line in FIG. 8 (e), the control unit 70 raises the capillary 10 and the clamper 15 as shown by the arrow 104 in FIG. 8 with the clamper 15 closed, and the tail wire 21 The lower end 22 of the
　次に制御部７０は、図７のステップＳ１０１、図３の（ａ）～（ｈ）に示すように、先端１２から延出させたテールワイヤ２１の下端２２を半導体素子５０の表面に接触させながらキャピラリ１０の先端１２を斜め下方向に移動させてテールワイヤ２１を半導体素子５０の表面に沿った方向に折り曲げて折り曲げワイヤ２３を成形する折り曲げワイヤ成形工程を実行する。折り曲げワイヤ成形工程は、下端２２を半導体素子５０の表面に接触させる点以外は先に説明した実施形態と同様である。 Next, as shown in steps S101 of FIG. 7 and (a) to (h) of FIG. 3, the control unit 70 brings the lower end 22 of the tail wire 21 extending from the tip 12 into contact with the surface of the semiconductor element 50. While moving the tip 12 of the capillary 10 diagonally downward, the tail wire 21 is bent in the direction along the surface of the semiconductor element 50 to form the bent wire 23, and the bending wire forming step is executed. The bending wire forming step is the same as that of the above-described embodiment except that the lower end 22 is brought into contact with the surface of the semiconductor element 50.
　次に、制御部７０は、図７のステップＳ１０２、図４の（ａ），（ｂ）に示すように、キャピラリ１０の先端１２と半導体素子５０の表面との間に折り曲げワイヤ２３の根元部分を挟み込んでキャピラリ１０の先端１２を横移動させて、起立ワイヤ２４を成形する起立ワイヤ成形工程を実行する。起立ワイヤ成形工程は、キャピラリ１０の先端１２と半導体素子５０の表面との間に折り曲げワイヤ２３を挟み込む以外は、先に説明した実施形態と同様である。 Next, as shown in step S102 of FIG. 7 and (a) and (b) of FIG. 4, the control unit 70 is the root portion of the bending wire 23 between the tip 12 of the capillary 10 and the surface of the semiconductor element 50. The tip 12 of the capillary 10 is laterally moved by sandwiching the above, and the standing wire forming step of forming the standing wire 24 is executed. The upright wire forming step is the same as that of the above-described embodiment except that the bent wire 23 is sandwiched between the tip 12 of the capillary 10 and the surface of the semiconductor element 50.
　次に、制御部７０は、図７のステップＳ１０３、図９の（ａ），（ｂ）に示すように、ボンディング工程を実行する。制御部７０は、図９の（ａ）の矢印１０５に示すように、キャピラリ１０を半導体素子５０の電極５１の上に移動させ、キャピラリ１０のＺ方向の中心線１９の位置を電極５１のＺ方向の中心線５２の位置から横方向に距離ｇだけずらした位置とする。ここで、距離ｇは、起立ワイヤ２４の根元２４ａがバンプ３５の凹み部３６に合うような距離である。 Next, the control unit 70 executes the bonding step as shown in step S103 of FIG. 7 and (a) and (b) of FIG. As shown by the arrow 105 in FIG. 9A, the control unit 70 moves the capillary 10 onto the electrode 51 of the semiconductor element 50, and positions the center line 19 of the capillary 10 in the Z direction in the Z of the electrode 51. The position is displaced laterally by a distance g from the position of the center line 52 in the direction. Here, the distance g is a distance such that the root 24a of the upright wire 24 fits into the recessed portion 36 of the bump 35.
　制御部７０は、図９の（ｂ）中の矢印１０６に示すように、クランパ１５を閉とした状態で、キャピラリ１０を下降させて起立ワイヤ２４の根元２４ａをバンプ３５の上面に成形された凹み部３６の上にボンディングする。図９の（ｂ）に示すように、起立ワイヤ２４の根元２４ａはバンプ３５の上面の形状に沿った形に成形されてバンプ３５の上にボンディングされる。 As shown by the arrow 106 in FIG. 9B, the control unit 70 lowered the capillary 10 with the clamper 15 closed, and formed the root 24a of the standing wire 24 on the upper surface of the bump 35. Bond over the recess 36. As shown in FIG. 9B, the root 24a of the upright wire 24 is formed into a shape that follows the shape of the upper surface of the bump 35 and is bonded onto the bump 35.
　起立ワイヤ２４を電極５１のバンプ３５の上にボンディングすると、起立ワイヤ２４は、図９の（ｂ）中の矢印１０７に示すように略垂直方向に起立し、電極５１の中心位置で中心線５２に略沿った方向に延びるピン状ワイヤ２５が成形される。 When the upright wire 24 is bonded onto the bump 35 of the electrode 51, the upright wire 24 stands up in a substantially vertical direction as shown by an arrow 107 in FIG. 9B, and the center line 52 at the center position of the electrode 51. A pin-shaped wire 25 extending in a direction substantially along the line is formed.
　制御部７０は、起立ワイヤ２４をボンディングしてピン状ワイヤ２５を成形したらボンディング工程を終了し、図７のステップＳ１０４に示すワイヤ切断工程を実行する。 When the control unit 70 bonds the standing wire 24 to form the pin-shaped wire 25, the control unit 70 ends the bonding step and executes the wire cutting step shown in step S104 of FIG.
　制御部７０は、図１０に破線で示すようにクランパ１５を開にした状態でキャピラリ１０を上昇させて先端１２からテールワイヤ２１を所定の長さだけ延出させる。そして、図１０に実線で示すように、制御部７０は、クランパ１５を閉としてクランパ１５とキャピラリ１０とを矢印１０８のように上昇させて、キャピラリ１０に挿通しているテールワイヤ２１の下端２２を切断する。これにより、制御部７０は、電極５１のバンプ３５の上に独立したピン状ワイヤ２５を成形する。 The control unit 70 raises the capillary 10 with the clamper 15 open as shown by the broken line in FIG. 10, and extends the tail wire 21 from the tip 12 by a predetermined length. Then, as shown by a solid line in FIG. 10, the control unit 70 closes the clamper 15 and raises the clamper 15 and the capillary 10 as shown by an arrow 108, and the lower end 22 of the tail wire 21 inserted into the capillary 10 is inserted. To disconnect. As a result, the control unit 70 forms an independent pin-shaped wire 25 on the bump 35 of the electrode 51.
　制御部７０は、ワイヤ切断工程を終了したら、キャピラリ１０を半導体素子５０の上に移動させる。そして、制御部７０は、図７のステップＳ１０５で全てのピン状ワイヤ２５の成形をしたかどうかを判断し、図７のステップＳ１０５でＮＯと判断した場合には、図７のステップＳ２０１に戻って、図７のステップＳ２０１、図８の（ａ），（ｂ）に示す圧着ボール成形工程、図７のステップＳ２０２、図８の（ｃ）～（ｅ）に示すバンプ成形工程、図７のステップＳ１０１、図３の（ａ）～（ｈ）に示す折り曲げワイヤ成形工程、図７のステップＳ１０２、図４の（ａ），（ｂ）に示す起立ワイヤ成形工程、図７のステップＳ１０３、図９の（ａ），（ｂ）に示すボンディング工程、図７のステップＳ１０４、図１０に示すワイヤ切断工程を繰り返し実行する。そして、図２のステップＳ１０５でＹＥＳと判断したらピン状ワイヤ２５の成形を終了する。 After completing the wire cutting process, the control unit 70 moves the capillary 10 onto the semiconductor element 50. Then, the control unit 70 determines whether or not all the pin-shaped wires 25 have been formed in step S105 of FIG. 7, and if it determines NO in step S105 of FIG. 7, returns to step S201 of FIG. Step S201 of FIG. 7, crimp ball forming step shown in FIGS. 8A and 8B, step S202 of FIG. 7, bump forming step shown in FIGS. 8C to 8E, FIG. Step S101, the bending wire forming step shown in FIGS. 3A to 3H, step S102 of FIG. 7, the standing wire forming step shown in FIGS. 4A and 4B, step S103 of FIG. 7, FIG. The bonding step shown in (a) and (b) of 9 and the wire cutting step shown in step S104 and FIG. 10 of FIG. 7 are repeatedly executed. Then, if YES is determined in step S105 of FIG. 2, the molding of the pin-shaped wire 25 is completed.
　以上説明した実施形態のピン状ワイヤ成形方法は、半導体素子５０の電極５１の上に圧着ボール３１とバンプ３５を成形し、バンプ３５の上に起立ワイヤ２４をボンディングしてピン状ワイヤ２５を成形するので、ピン状ワイヤ２５を成形する工程で半導体素子５０に加える力が小さく、半導体素子５０の損傷をより好適に抑制しながらピン状ワイヤ２５を成形することができる。また、半導体素子５０の表面にテールワイヤ２１の下端２２を接触させて折り曲げワイヤ２３を成形するので、少ないスペースでピン状ワイヤ２５を成形することができる。 In the pin-shaped wire forming method of the embodiment described above, the crimping ball 31 and the bump 35 are formed on the electrode 51 of the semiconductor element 50, and the upright wire 24 is bonded onto the bump 35 to form the pin-shaped wire 25. Therefore, the force applied to the semiconductor element 50 in the step of forming the pin-shaped wire 25 is small, and the pin-shaped wire 25 can be formed while more preferably suppressing damage to the semiconductor element 50. Further, since the bent wire 23 is formed by bringing the lower end 22 of the tail wire 21 into contact with the surface of the semiconductor element 50, the pin-shaped wire 25 can be formed in a small space.
　以上、説明した実施形態のピン状ワイヤ成形方法では、制御部７０は、ワイヤ成形工程において、テールワイヤ２１の下端２２を半導体素子５０の表面に接触させてテールワイヤ２１を折り曲げとして説明したがこれに限らず、例えば、図１１に示すように、下端２２をバンプ３５に接触させて折り曲げるようにしてもよい。この場合、より少ないスペースでピン状ワイヤ２５を成形することができる。 In the pin-shaped wire forming method of the above-described embodiment, the control unit 70 has described the tail wire 21 as being bent by bringing the lower end 22 of the tail wire 21 into contact with the surface of the semiconductor element 50 in the wire forming step. For example, as shown in FIG. 11, the lower end 22 may be brought into contact with the bump 35 and bent. In this case, the pin-shaped wire 25 can be formed in less space.
　なお、制御部７０は、本実施形態においても折り曲げワイヤ成形工程において、下端２２を基板あるいは基準面４０の表面に接触させてテールワイヤ２１を折り曲げるようにしてもよい。また、半導体素子５０の電極５１の上に限らず、基板の電極の上にピン状ワイヤ２５を成形してもよい。 In the bending wire forming step in the present embodiment as well, the control unit 70 may bend the tail wire 21 by bringing the lower end 22 into contact with the surface of the substrate or the reference surface 40. Further, the pin-shaped wire 25 may be formed not only on the electrode 51 of the semiconductor element 50 but also on the electrode of the substrate.
　１　ワイヤボンディング装置、２　基台、３　ＸＹテーブル、４　ボンディングヘッド、５　トーチ電極、６　超音波ホーン、７　超音波発振器、８　ワイヤテンショナ、９　回転スプール、１０　キャピラリ、１２　先端、１３　チャンファ部、１５　クランパ、１９，５２　中心線、２０　ワイヤ、２１　テールワイヤ、２２　下端、２３　折り曲げワイヤ、２４　起立ワイヤ、２５　ピン状ワイヤ、３０　フリーエアボール、３１　圧着ボール、３５　バンプ、３６　凹み部、４０　基準面、５０　半導体素子、５１　電極、６０　ボンディングステージ、６１　ヒータ、６２　ワーク、７０　制御部。 1 wire bonding device, 2 base, 3 XY table, 4 bonding head, 5 torch electrode, 6 ultrasonic horn, 7 ultrasonic oscillator, 8 wire tensioner, 9 rotating spool, 10 capillary, 12 tip, 13 chamfer part, 15 Clamper, 19, 52 center line, 20 wire, 21 tail wire, 22 lower end, 23 bending wire, 24 standing wire, 25 pin-shaped wire, 30 free air ball, 31 crimping ball, 35 bump, 36 recess, 40 reference surface , 50 semiconductor elements, 51 electrodes, 60 bonding stages, 61 heaters, 62 workpieces, 70 control units.

Claims (8)

  1. 　ワイヤが挿通されたボンディングツールを用いて基板又は半導体素子のボンディング位置にピン状のワイヤを成形するピン状ワイヤ成形方法であって、
    　先端から所定の長さのワイヤを延出させた前記ボンディングツールを基準面に向かって斜めに下降させて、ワイヤの下端を前記基準面に接触させてワイヤを前記基準面に沿った方向に折り曲げて折り曲げワイヤを成形する折り曲げワイヤ成形工程と、
    　前記ボンディングツールの先端と前記基準面との間に前記折り曲げワイヤを挟みこんだ状態で、前記折り曲げワイヤの延びる方向と反対方向に向かって前記ボンディングツールを横移動させて前記折り曲げワイヤを上方向に起立させて起立ワイヤを成形する起立ワイヤ成形工程と、
    　前記ボンディングツールを前記基板又は半導体素子の前記ボンディング位置の上に移動させて前記起立ワイヤを前記ボンディング位置にボンディングするボンディング工程と、
    　前記ボンディングツールを上昇させて前記ボンディングツールに挿通されたワイヤを切断することによって前記起立ワイヤを前記ボンディング位置から立ち上がるピン状ワイヤとするワイヤ切断工程と、
    　を有するピン状ワイヤ成形方法。     A pin-shaped wire forming method for forming a pin-shaped wire at a bonding position of a substrate or a semiconductor element using a bonding tool through which a wire is inserted.
    The bonding tool, in which a wire of a predetermined length is extended from the tip, is lowered diagonally toward a reference plane, the lower end of the wire is brought into contact with the reference plane, and the wire is bent in a direction along the reference plane. Bending wire forming process to form the folding wire
    With the bending wire sandwiched between the tip of the bonding tool and the reference surface, the bonding tool is laterally moved in a direction opposite to the extending direction of the bending wire to move the bending wire upward. The standing wire molding process of standing up and molding the standing wire,
    A bonding step in which the bonding tool is moved onto the bonding position of the substrate or semiconductor element to bond the upright wire to the bonding position.
    A wire cutting step of raising the bonding tool to cut the wire inserted through the bonding tool to make the standing wire a pin-shaped wire rising from the bonding position.
    Pin-shaped wire forming method having.
  2. 　請求項１に記載のピン状ワイヤ成形方法であって、
    　前記折り曲げワイヤ成形工程は、前記ボンディングツールを下降させるにつれて前記ボンディングツールの移動方向と前記基準面とのなす角度が小さくなるように、前記ボンディングツールを前記基準面に向かって斜めに下降させること、
    　を特徴とするピン状ワイヤ成形方法。     The pin-shaped wire forming method according to claim 1.
    In the bending wire forming step, the bonding tool is lowered obliquely toward the reference surface so that the angle formed by the moving direction of the bonding tool and the reference surface becomes smaller as the bonding tool is lowered.
    A pin-shaped wire forming method characterized by.
  3. 　請求項１又は２に記載のピン状ワイヤ成形方法であって、
    　前記ボンディング工程は、前記ボンディングツールの中心位置を前記ボンディング位置の中心位置からずらしてボンディングすること、
    　を特徴とするピン状ワイヤ成形方法。     The pin-shaped wire forming method according to claim 1 or 2.
    In the bonding step, bonding is performed by shifting the center position of the bonding tool from the center position of the bonding position.
    A pin-shaped wire forming method characterized by.
  4. 　請求項１又は２に記載のピン状ワイヤ成形方法であって、
    　前記折り曲げワイヤ成形工程の前に、
    　前記ボンディングツールを前記ボンディング位置に向かって下降させて先端をフリーエアボールに成形したワイヤを前記ボンディング位置にボンディングして圧着ボールを成形する圧着ボール成形工程と、
    　前記ボンディングツールの先端からワイヤを繰り出しながら前記ボンディングツールを上昇させた後、繰り出したワイヤを前記圧着ボールの上に折り返し、押圧してバンプを成形するバンプ成形工程と、を含み、
    　前記ボンディング工程は、前記起立ワイヤを前記バンプの上にボンディングすること、
    　を特徴とするピン状ワイヤ成形方法。     The pin-shaped wire forming method according to claim 1 or 2.
    Before the bending wire forming step,
    A crimping ball forming step of lowering the bonding tool toward the bonding position and bonding a wire having a tip formed into a free air ball to the bonding position to form a crimping ball.
    A bump forming step of raising the bonding tool while feeding out a wire from the tip of the bonding tool, then folding the drawn wire onto the crimping ball and pressing the wire to form a bump is included.
    The bonding step is to bond the upright wire onto the bump.
    A pin-shaped wire forming method characterized by.
  5. 　請求項４に記載のピン状ワイヤ成形方法であって、
    　前記バンプ成形工程は、繰り出したワイヤを前記圧着ボールの上に折り返し、前記ボンディングツールの中心位置を前記ボンディング位置からずらしてワイヤを押圧して上面に凹み部を有する前記バンプを成形し、
    　前記ボンディング工程は、前記起立ワイヤの根元が前記バンプの前記凹み部に合うように前記ボンディングツールの中心位置を前記ボンディング位置からずらしてボンディングすること、
    　を特徴とするピン状ワイヤ成形方法。     The pin-shaped wire forming method according to claim 4.
    In the bump forming step, the drawn wire is folded back on the crimping ball, the center position of the bonding tool is shifted from the bonding position, and the wire is pressed to form the bump having a recessed portion on the upper surface.
    The bonding step is to shift the center position of the bonding tool from the bonding position so that the root of the upright wire fits into the recessed portion of the bump.
    A pin-shaped wire forming method characterized by.
  6. 　請求項１又は２に記載のピン状ワイヤ成形方法であって、
    　前記基準面は、前記基板の表面又は前記半導体素子の表面であること、
    　を特徴とするピン状ワイヤ成形方法。     The pin-shaped wire forming method according to claim 1 or 2.
    The reference surface is the surface of the substrate or the surface of the semiconductor element.
    A pin-shaped wire forming method characterized by.
  7. 　請求項５に記載のピン状ワイヤ成形方法であって、
    　前記折り曲げワイヤ成形工程は、先端から所定の長さのワイヤを延出させた前記ボンディングツールを前記基板の表面又は前記半導体素子の表面に向かって斜めに下降させて、ワイヤの下端を前記バンプに接触させてワイヤを前記基板の表面又は前記半導体素子の表面に沿った方向に折り曲げて前記折り曲げワイヤを成形すること、
    　を特徴とするピン状ワイヤ成形方法。     The pin-shaped wire forming method according to claim 5.
    In the bending wire forming step, the bonding tool in which a wire having a predetermined length is extended from the tip thereof is obliquely lowered toward the surface of the substrate or the surface of the semiconductor element, and the lower end of the wire is formed into the bump. Forming the bent wire by making contact and bending the wire in a direction along the surface of the substrate or the surface of the semiconductor element.
    A pin-shaped wire forming method characterized by.
  8. 　ワイヤが挿通されたボンディングツールを用いて基板又は半導体素子のボンディング位置にピン状のワイヤを成形するワイヤボンディング装置であって、
    　前記ボンディングツールの位置を調整する制御部を備え、
    　前記制御部が、
    　先端から所定の長さのワイヤを延出させた前記ボンディングツールを基準面に向かって斜めに下降させて、ワイヤの下端を前記基準面に接触させてワイヤを前記基準面に沿った方向に折り曲げて折り曲げワイヤを成形する折り曲げワイヤ成形工程と、
    　前記ボンディングツールの先端と前記基準面との間に前記折り曲げワイヤを挟みこんだ状態で、前記折り曲げワイヤの延びる方向と反対方向に向かって前記ボンディングツールを横移動させて前記折り曲げワイヤを上方向に起立させて起立ワイヤを成形する起立ワイヤ成形工程と、
    　前記ボンディングツールを前記基板又は半導体素子の前記ボンディング位置の上に移動させて前記起立ワイヤを前記ボンディング位置にボンディングするボンディング工程と、
    　前記ボンディングツールを上昇させて前記ボンディングツールに挿通されたワイヤを切断することによって前記起立ワイヤを前記ボンディング位置から立ち上がるピン状ワイヤとするワイヤ切断工程と、
    　を実行することを特徴とするワイヤボンディング装置。     A wire bonding device that forms pin-shaped wires at the bonding positions of substrates or semiconductor elements using a bonding tool through which wires are inserted.
    A control unit for adjusting the position of the bonding tool is provided.
    The control unit
    The bonding tool, in which a wire of a predetermined length is extended from the tip, is lowered diagonally toward a reference plane, the lower end of the wire is brought into contact with the reference plane, and the wire is bent in a direction along the reference plane. Bending wire forming process to form the folding wire
    With the bending wire sandwiched between the tip of the bonding tool and the reference surface, the bonding tool is laterally moved in a direction opposite to the extending direction of the bending wire to move the bending wire upward. The standing wire molding process of standing up and molding the standing wire,
    A bonding step in which the bonding tool is moved onto the bonding position of the substrate or semiconductor element to bond the upright wire to the bonding position.
    A wire cutting step of raising the bonding tool to cut the wire inserted through the bonding tool to make the standing wire a pin-shaped wire rising from the bonding position.
    A wire bonding device characterized by performing.
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