JP2003142516A - Method and device for wire bonding - Google Patents

Method and device for wire bonding

Info

Publication number
JP2003142516A
JP2003142516A JP2001340080A JP2001340080A JP2003142516A JP 2003142516 A JP2003142516 A JP 2003142516A JP 2001340080 A JP2001340080 A JP 2001340080A JP 2001340080 A JP2001340080 A JP 2001340080A JP 2003142516 A JP2003142516 A JP 2003142516A
Authority
JP
Japan
Prior art keywords
wire
bonding
ball
capillary
bonded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001340080A
Other languages
Japanese (ja)
Inventor
Toshiya Taniguchi
俊哉 谷口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shibaura Mechatronics Corp
Original Assignee
Shibaura Mechatronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shibaura Mechatronics Corp filed Critical Shibaura Mechatronics Corp
Priority to JP2001340080A priority Critical patent/JP2003142516A/en
Publication of JP2003142516A publication Critical patent/JP2003142516A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/85951—Forming additional members, e.g. for reinforcing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01039—Yttrium [Y]
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a method and device by which wire bonding can be performed so that no crack occurs in a semiconductor chip. SOLUTION: After a ball 21 is formed at the front end of a wire 5 held by a capillary 16, a crushed ball 35 is formed by pressing the ball 21 against a crushing plate 32. Thereafter, the wire 5 is bonded to the electrode 3a of a semiconductor chip 3 by pressing the crushed ball 35 against the electrode 3a.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【発明の属する技術分野】本発明は、ワイヤを被ボンデ
ィング物にボンディングする、ワイヤボンディング方法
およびワイヤボンディング装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wire bonding method and a wire bonding apparatus for bonding a wire to an object to be bonded.

【０００２】[0002]

【従来の技術】まず、従来より用いられているワイヤボ
ンディング装置について説明する。2. Description of the Related Art First, a wire bonding apparatus which has been conventionally used will be described.

【０００３】図１３はそのワイヤボンディング装置の構
成を示す模式図を示しており、リードフレーム１のアイ
ランド２上に載置された半導体チップ３と、リード４と
を金線等の導電性のワイヤ５によりボンディングするも
のである。FIG. 13 is a schematic view showing the structure of the wire bonding apparatus, in which a semiconductor chip 3 mounted on an island 2 of a lead frame 1 and a lead 4 are made of a conductive wire such as a gold wire. 5 is used for bonding.

【０００４】ワイヤボンディング装置６は、基礎７に据
え付けた第１の架台８と第２の架台９を備える。第１の
架台８の上部には加熱テーブル１０が設けられ、その上
面にリードフレーム１が不図示の搬送装置にて搬送さ
れ、そして位置決めされる。第２の架台９の上部にはＸ
−Ｙテーブル１１が備えられ、さらにＸ−Ｙテーブル１
１の上面にボンディングヘッド１２が載置される。ボン
ディングヘッド１２には、ボンディングアーム１３、ト
ーチ電極１４、並びにカメラ等の位置検出器１５が設け
られる。ボンディングアーム１３の一端部にはキャピラ
リ１６が保持されるとともに、他端部には超音波振動子
１７が設けられていて、ボンディングヘッド１２に備え
られた駆動装置１８によりボンディングアーム１３を介
してキャピラリ１６は上下動させられるようになってい
る。なお、１９はワイヤスプール、２０はワイヤボンデ
ィング装置の制御装置で、ＣＰＵ等から構成される。The wire bonding device 6 comprises a first mount 8 and a second mount 9 mounted on a foundation 7. A heating table 10 is provided on the upper part of the first pedestal 8, and the lead frame 1 is carried on the upper surface thereof by a carrying device (not shown) and positioned. X on top of the second mount 9
-Y table 11 is provided, and further XY table 1
The bonding head 12 is mounted on the upper surface of 1. The bonding head 12 is provided with a bonding arm 13, a torch electrode 14, and a position detector 15 such as a camera. A capillary 16 is held at one end of the bonding arm 13, and an ultrasonic transducer 17 is provided at the other end of the bonding arm 13. The driving device 18 provided in the bonding head 12 allows the capillary 16 to pass through the capillary. 16 is movable up and down. Reference numeral 19 is a wire spool, and 20 is a control device for the wire bonding apparatus, which is composed of a CPU and the like.

【０００５】このような構成のワイヤボンディング装置
６を用いての、半導体チップ３とリード４とのワイヤボ
ンディングは、次のようにして行なわれる。Wire bonding of the semiconductor chip 3 and the leads 4 using the wire bonding device 6 having such a structure is performed as follows.

【０００６】まず、図１４に示すように、ワイヤスプー
ル１９より繰り出されるワイヤ５をキャピラリ１６に挿
通し、その先端をキャピラリ１６の先端から少し突出さ
せた状態とする。First, as shown in FIG. 14, the wire 5 fed from the wire spool 19 is inserted into the capillary 16 so that its tip is slightly projected from the tip of the capillary 16.

【０００７】次に、図１５に示すように、キャピラリ１
６より突出したワイヤ５とトーチ電極１４間でのスパー
クにてワイヤ先端にボール２１を形成する。Next, as shown in FIG. 15, the capillary 1
A ball 21 is formed at the tip of the wire by sparking between the wire 5 protruding from 6 and the torch electrode 14.

【０００８】次に、図１６に示すように、キャピラリ１
６を下降させ、このボール２１を半導体チップ３の電極
３ａに押圧してボンディングする。この時、半導体チッ
プ３は加熱テーブル１０により加熱されているととも
に、超音波振動子１７を作動させて超音波をキャピラリ
１６に付与する。Next, as shown in FIG. 16, the capillary 1
6 is lowered and the ball 21 is pressed against the electrode 3a of the semiconductor chip 3 for bonding. At this time, the semiconductor chip 3 is being heated by the heating table 10 and at the same time, the ultrasonic transducer 17 is operated to apply ultrasonic waves to the capillary 16.

【０００９】次に、図１７に示すように、キャピラリ１
６を上方に移動させた後、リード４の上方に移動させ、
そして再度下降させてワイヤ５をリード４に押圧し、ワ
イヤ５をリード４にボンディングする。この時、リード
４は加熱テーブル１０により加熱されているとともに、
超音波振動子１７を作動させてキャピラリ１６に超音波
を付与する。Next, as shown in FIG. 17, the capillary 1
6 is moved upward, and then is moved above the lead 4,
Then, the wire 5 is lowered again to press the wire 5 against the lead 4, and the wire 5 is bonded to the lead 4. At this time, the lead 4 is being heated by the heating table 10, and
The ultrasonic transducer 17 is operated to apply ultrasonic waves to the capillary 16.

【００１０】リード４へのボンディングが終了したら、
図１８に示すように、キヤピラリ１６を上昇させるとと
もに、不図示のクランパを作動させ、リード４へのボン
ディング部よりワイヤ５を切断する。この切断後、キャ
ピラリ１６は図１４に示した最初の位置まで上昇し、１
工程が終了する。When the bonding to the lead 4 is completed,
As shown in FIG. 18, the capillaries 16 are lifted and a clamper (not shown) is operated to cut the wires 5 from the bonding portions to the leads 4. After this cutting, the capillary 16 is raised to the initial position shown in FIG.
The process ends.

【００１１】[0011]

【発明が解決しようとする課題】従来のワイヤボンディ
ングにおいて、ワイヤ５の先端を半導体チップ３の電極
３ａにボンディングするときを詳細に検討すると、トー
チ電極１４によってワイヤ先端に形成されたボール２１
が半導体チップ３の電極３ａに当接した後、図１９に示
すように、まずこのボール２１を潰すために大きな荷重
ａをキャピラリ１６を介して電極３ａに付与している。
そしてボール２１がつぶれた後、この押しつぶされたボ
ールを超音波を付与しつつ電極に接続するための荷重ｂ
（この荷重は、ボールを押し潰す荷重ａの例えば半分以
下）を加えるようにしている。When the tip of the wire 5 is bonded to the electrode 3a of the semiconductor chip 3 in the conventional wire bonding, the ball 21 formed at the tip of the wire by the torch electrode 14 will be examined in detail.
After contacting the electrode 3a of the semiconductor chip 3, first, as shown in FIG. 19, a large load a is applied to the electrode 3a via the capillary 16 in order to crush the ball 21.
Then, after the ball 21 is crushed, a load b for connecting the crushed ball to the electrode while applying ultrasonic waves
(This load is, for example, half or less of the load a for crushing the ball).

【００１２】このように、ボンディングの当初に、ボー
ルを潰すための大きな荷重ａが衝撃荷重となって電極に
加えられるため、半導体チップにクラックを発生させて
しまうことがある。このため、半導体装置の品質を低下
させ、その機能を損なうという欠点があった。As described above, at the beginning of bonding, a large load a for crushing the ball is applied as an impact load to the electrode, which may cause cracks in the semiconductor chip. Therefore, there is a drawback that the quality of the semiconductor device is deteriorated and its function is impaired.

【００１３】また、ボールのつぶれ量の大小は、ワイヤ
先端と被ボンディング面、上記の場合では電極面との接
触面積の大小につながり、これはボンディング状態の良
否に影響を与える。つまり、良好なボンディング状態を
得るには、必要なつぶれ量というものを確保する必要が
ある。ところが、例えばリードフレームの曲がり等によ
りアイランド部が加熱テーブルの上面より浮いているよ
うな場合、キャピラリにて電極にボンディング荷重並び
に超音波振動を付与してボンディング作業を行なったと
しても、アイランドが浮いているために超音波振動等が
確実に付与されず、結果的に必要な径の潰しボールが形
成されず、これが原因でボンディング不良を生じてしま
うといった欠点も有していた。Further, the size of the crushed amount of the ball leads to the size of the contact area between the tip of the wire and the surface to be bonded, in the above case, the electrode surface, which affects the quality of the bonding state. That is, in order to obtain a good bonding state, it is necessary to secure a necessary amount of collapse. However, for example, when the island part floats above the upper surface of the heating table due to bending of the lead frame, etc., the island floats even if the bonding load and ultrasonic vibration are applied to the electrode by the capillary. Therefore, ultrasonic vibrations and the like are not reliably applied, and as a result, a crushed ball having a necessary diameter is not formed, which causes a defect of bonding.

【００１４】そこで本発明は、ワイヤボンディングによ
り被ボンディング物へクラックが発生する等のボンディ
ング不良を防止し、良品質の製品を製造することを目的
とする。Therefore, an object of the present invention is to prevent defective bonding such as cracking in an object to be bonded by wire bonding and to manufacture a good quality product.

【００１５】[0015]

【課題を解決するための手段】本発明のワイヤボンディ
ング方法は、キャピラリに保持されたワイヤを被ボンデ
ィング物に押し付けてボンディングするワイヤボンディ
ング方法において、前記ワイヤ先端にボールを形成する
工程と、このボールを潰し部材に押し付けて潰しボール
とする工程と、この潰しボールを被ボンディング物に押
し付けることで前記ワイヤを被ボンディング物にボンデ
ィングする工程と、を有することを特徴とする。A wire bonding method of the present invention is a wire bonding method in which a wire held by a capillary is pressed against an object to be bonded for bonding, and a step of forming a ball at the tip of the wire and the ball. Is pressed against a crushing member to form a crushed ball, and the wire is bonded to the bonded object by pressing the crushed ball against the object to be bonded.

【００１６】また本発明のワイヤボンディング装置は、
ワイヤを保持するキャピラリと、前記ワイヤ先端にボー
ルを形成するボール形成装置と、前記キャピラリの移動
装置とを備え、前記ボール形成装置により前記ワイヤ先
端に形成されたボールを前記移動装置により前記キャピ
ラリを移動させることで被ボンディング物に押し付けワ
イヤをボンディングするワイヤボンディング装置におい
て、前記ワイヤ先端に形成されたボールを潰す潰し部材
を設け、前記ワイヤを被ボンディング物にボンディング
する前に前記ボールをこの潰し部材に押し付けてなるこ
とを特徴とする。Further, the wire bonding apparatus of the present invention is
A capillary for holding a wire, a ball forming device for forming a ball at the wire tip, and a moving device for the capillary are provided, and the ball formed at the wire tip by the ball forming device is moved by the moving device to move the capillary. In a wire bonding apparatus for bonding a wire by pressing it to an object to be bonded by moving it, a crushing member for crushing a ball formed at the tip of the wire is provided, and the ball is crushed before bonding the wire to the object to be bonded It is characterized by being pressed against.

【００１７】[0017]

【発明の実施の形態】本発明の実施の形態について、図
を用いて説明する。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described with reference to the drawings.

【００１８】図１は、本発明が適用されてなるワイヤボ
ンディング装置の構成を示す模式図、図２乃至図１２
は、図１のワイヤボンディング装置を用いてのボンディ
ング工程図で、それぞれ図１３に示したのと同一部分に
同一番号を付し、その説明は省略する。FIG. 1 is a schematic view showing the structure of a wire bonding apparatus to which the present invention is applied, and FIGS.
Is a bonding process diagram using the wire bonding apparatus of FIG. 1, and the same parts as those shown in FIG. 13 are denoted by the same reference numerals and the description thereof will be omitted.

【００１９】図１に示されるワイヤボンディング装置３
０は、Ｘ−Ｙテーブル１１の上面にボンディングヘッド
３１が載置される。ボンディングヘッド３１には、ボン
ディングアーム１３、トーチ電極１４、位置検出器１５
とともに、ステンレス材でなる潰し板（潰し部材）３２
が設けられる。この潰し板３２は、キャピラリ１６の上
下方向の移動範囲のほぼ中央部の高さ位置にて水平動自
在に設けられ、ボンディングヘッド３１に設けられた潰
し板駆動装置３３により、キャピラリ１６の下方位置と
ボンディングヘッド３１側の待避位置との間にて移動さ
せられるようになっている。The wire bonding apparatus 3 shown in FIG.
In No. 0, the bonding head 31 is placed on the upper surface of the XY table 11. The bonding head 31 includes a bonding arm 13, a torch electrode 14, and a position detector 15.
Together with the crush plate (crush member) 32 made of stainless steel
Is provided. The crushing plate 32 is horizontally movably provided at a height position at a substantially central portion of the vertical movement range of the capillary 16, and is positioned below the capillary 16 by a crushing plate driving device 33 provided in the bonding head 31. And a retracted position on the side of the bonding head 31.

【００２０】なお、３４はワイヤボンディング装置の制
御装置で、ＣＰＵ等から構成される。Reference numeral 34 is a controller for the wire bonding apparatus, which is composed of a CPU and the like.

【００２１】このワイヤボンディング装置３０を用いて
の、半導体チップ３とリード４とのワイヤボンディング
は、次のようにして行なわれる。Wire bonding of the semiconductor chip 3 and the leads 4 using the wire bonding apparatus 30 is performed as follows.

【００２２】まず、図２に示すように、ワイヤスプール
１９より繰り出されるワイヤ５をキャピラリ１６に挿通
し、その先端をキャピラリ１６の先端から少し突出させ
る。First, as shown in FIG. 2, the wire 5 fed from the wire spool 19 is inserted into the capillary 16 and the tip thereof is slightly projected from the tip of the capillary 16.

【００２３】次に、図３に示すように、キャピラリ１６
より突出したワイヤ５とトーチ電極１４間でのスパーク
にてワイヤ先端にボール２１を形成する。Next, as shown in FIG.
A ball 21 is formed at the tip of the wire by sparking between the more protruding wire 5 and the torch electrode 14.

【００２４】次に、図４に示すように、潰し板駆動装置
３３を作動させ、潰し板３２をキャピラリ１６の下方に
前進させる。Next, as shown in FIG. 4, the crushing plate driving device 33 is operated to move the crushing plate 32 forward of the capillary 16.

【００２５】次に、図５に示すように、キャピラリ１６
を下降させてワイヤ先端のボール２１を潰し板３２に当
接させ、さらにボールを潰し板３２に押圧して潰しボー
ル３５を形成する。潰し板３２への押圧によって形成さ
れた潰しボール３５は、潰し板３２との接触面が平面と
されて後の電極３ａとの接触面とされるとともに、全体
が半球状とされる。Next, as shown in FIG.
Is lowered to bring the ball 21 at the tip of the wire into contact with the crushing plate 32, and the ball is pressed against the crushing plate 32 to form the crushed ball 35. The crushing ball 35 formed by pressing against the crushing plate 32 has a flat contact surface with the crushing plate 32 to be a contact surface with the subsequent electrode 3a, and has a hemispherical shape as a whole.

【００２６】次に、図６に示すように、キャピラリ１６
を上昇させるとともに、図７に示すように、潰し板駆動
装置３３により潰し板３２を待避位置に移動させる。Next, as shown in FIG. 6, the capillary 16
7, the crush plate 32 is moved to the retracted position by the crush plate drive device 33 as shown in FIG.

【００２７】次に、図８に示すように、キャピラリ１６
を下降させ、潰しボール３５を半導体チップ３の電極３
ａに押圧してボンディングする。この時、半導体チップ
３は加熱テーブル１０により加熱されているとともに、
超音波振動子１７を作動させて超音波をキャピラリ１６
に付与する。Next, as shown in FIG.
To lower the crushed ball 35 to the electrode 3 of the semiconductor chip 3.
Bonding by pressing on a. At this time, the semiconductor chip 3 is being heated by the heating table 10, and
The ultrasonic transducer 17 is operated to generate ultrasonic waves in the capillary 16.
Given to.

【００２８】次に、図９に示すように、キャピラリ１６
を上方に移動させた後、リード４の上方に移動させ、そ
して再度下降させてワイヤ５をリード４に押圧し、ワイ
ヤ５をリード４にボンディングする。この時、リード４
は加熱テーブル１０により加熱されているとともに、超
音波振動子１７を作動させて超音波をキャピラリ１６に
付与する。Next, as shown in FIG. 9, the capillary 16
Is moved to the upper side of the lead 4 and then lowered again to press the wire 5 against the lead 4 and bond the wire 5 to the lead 4. At this time, lead 4
While being heated by the heating table 10, the ultrasonic transducer 17 is operated to apply ultrasonic waves to the capillary 16.

【００２９】リード４へのボンディングが終了したら、
図１０に示すように、キヤピラリ１６を上昇させるとと
もに、不図示のクランパを作動させ、図１１に示すよう
に、リード４へのボンディング部よりワイヤ５を切断す
る。この切断後、キャピラリ１６は図２に示した最初の
位置まで上昇し、１工程が終了する。When the bonding to the lead 4 is completed,
As shown in FIG. 10, while raising the capillaries 16 and operating a clamper (not shown), the wire 5 is cut from the bonding portion to the lead 4 as shown in FIG. After this cutting, the capillary 16 is raised to the initial position shown in FIG. 2, and one step is completed.

【００３０】この実施の形態によれば、ワイヤ先端に形
成されたボール２１を潰し板３２に押しつけることで潰
しボール３５を形成し、その後、この潰しボール３５を
半導体チップ３に押圧してボンディングするようにし
た。つまり、ボール２１に大きな荷重が付与されること
で形成される潰しボール３５を、電極３ａ上ではなく、
潰し板３２上において形成するようにした。図１２に示
すように、潰しボール３５の形成には従来と同様な大き
な荷重ａがボール２１に付与されることになるが、その
潰しボール３５を半導体チップ３の電極３ａにボンディ
ングするにあたっては、この潰しボール３５を形成する
に必要な荷重ａの半分以下の荷重ｂを付与することでボ
ンディングが可能なため、従来のような電極３に大きな
荷重が衝撃荷重として付与されるといったことを避ける
ことができる。従って、ワイヤ５を半導体チップ３にボ
ンディングする際、半導体チップ３にクラック等の発生
によるボンディング不良を防止することができる。According to this embodiment, the ball 21 formed at the tip of the wire is pressed against the crushing plate 32 to form the crushing ball 35, and then the crushing ball 35 is pressed to the semiconductor chip 3 for bonding. I did it. That is, the crushed ball 35 formed by applying a large load to the ball 21 is not placed on the electrode 3a but on the electrode 3a.
It was formed on the crushed plate 32. As shown in FIG. 12, a large load a similar to the conventional one is applied to the ball 21 to form the crushed ball 35. When the crushed ball 35 is bonded to the electrode 3a of the semiconductor chip 3, Bonding is possible by applying a load b that is less than half the load a required to form the crushed ball 35, so avoiding a large load as an impact load that is conventionally applied to the electrode 3. You can Therefore, when the wire 5 is bonded to the semiconductor chip 3, it is possible to prevent defective bonding due to generation of cracks or the like in the semiconductor chip 3.

【００３１】また、ワイヤ５を電極３にボンディングす
る前に潰し板３２にボール２１を押し付けることで潰し
ボール３５を形成するようにしたので、この潰しボール
形成時に、その潰しボール３５には、良好なボンディン
グを行なうに必要な大きさの電極面との接触面が形成さ
れることになる。従って、たとえアイランド２が加熱テ
ーブル１０より浮き上がっていたとしても、ワイヤ５と
電極面との間の必要な接触面積は予め確保され、このよ
うな場合であっても、従来に比して、十分良好なワイヤ
ボンディングを行なうことができる。Further, since the crushed ball 35 is formed by pressing the ball 21 against the crushed plate 32 before the wire 5 is bonded to the electrode 3, the crushed ball 35 is well formed when the crushed ball is formed. Therefore, a contact surface with the electrode surface having a size necessary for performing various bonding is formed. Therefore, even if the island 2 is lifted from the heating table 10, the necessary contact area between the wire 5 and the electrode surface is secured in advance, and even in such a case, it is sufficient compared to the conventional case. Good wire bonding can be performed.

【００３２】ところで、従来のワイヤボンディング工程
に比して、潰し板３２を用いての潰し工程が追加される
ため、単純に考えるとその分、サイクルタイムが長くな
る。しかしながら、これは次のようにすることで、解決
することができる。すなわち、上記した実施の形態で
は、ボンディングアーム１３、トーチ電極１４、潰し板
３２はすべてボンディングヘッド（移動装置）３１に設
けられていて、Ｘ−Ｙテーブル１１の移動に伴って一緒
に移動する。従って、リード４へにワイヤボンディング
が終了して、キャピラリ１６が次の電極３の上方に移動
する間にこの動作を行なうことで解決できる。つまり、
キャピラリ１６の移動工程と潰し工程とを並行して行な
うのである。By the way, as compared with the conventional wire bonding process, since the crushing process using the crushing plate 32 is added, the cycle time becomes longer by a simple consideration. However, this can be solved by doing the following. That is, in the above-described embodiment, the bonding arm 13, torch electrode 14, and crushing plate 32 are all provided in the bonding head (moving device) 31 and move together with the movement of the XY table 11. Therefore, this can be solved by performing this operation while the wire bonding to the lead 4 is completed and the capillary 16 moves above the next electrode 3. That is,
The moving process and the crushing process of the capillary 16 are performed in parallel.

【００３３】なお、上記実施の形態では、潰し板３２を
トーチ電極１４とは別に設けたが、トーチ電極１４をキ
ャピラリ１６の下方位置と待避位置との間で移動できる
ように構成し、このトーチ電極の一部を潰し部材として
兼用するようにしても構わないる。Although the crush plate 32 is provided separately from the torch electrode 14 in the above embodiment, the torch electrode 14 is constructed so as to be movable between the lower position of the capillary 16 and the retracted position. A part of the electrode may also be used as a crushing member.

【００３４】さらに本発明の目的を達成する上において
は、潰し部材（潰し板３２）をボンディングヘッド３１
に設けたが、装置本体に固定配置とし、ワイヤ先端にボ
ールを形成した後、Ｘ−Ｙテーブル１１の移動により、
キャピラリをその潰し部材の位置まで移動させるように
しても良いし、装置本体に移動自在に配置するものであ
ってもかまわない。Further, in achieving the object of the present invention, the crushing member (crushing plate 32) is replaced with the bonding head 31.
However, after the ball is formed at the tip of the wire and the XY table 11 is moved,
The capillary may be moved to the position of the crushing member, or may be movably arranged in the apparatus main body.

【００３５】また、上記実施の形態では、潰しボール３
５を半導体チップ３の電極３ａにボンディングする例を
説明したが、本発明は半導体チップ以外でも、被ボンデ
ィング物が衝撃荷重に弱いものであれば適用できる。Further, in the above embodiment, the crushed ball 3
Although the example of bonding 5 to the electrode 3a of the semiconductor chip 3 has been described, the present invention can be applied to other than the semiconductor chip as long as the object to be bonded is weak against impact load.

【００３６】[0036]

【発明の効果】本発明によれば、ワイヤボンディングに
より被ボンディング物へクラックが発生する等のボンデ
ィング不良を防止し、良品質の製品を製造することがで
きる。As described above, according to the present invention, it is possible to prevent defective bonding such as generation of cracks in an object to be bonded by wire bonding, and to manufacture a good quality product.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明が適用されてなるワイヤボンディング装
置の構成を示す模式図。FIG. 1 is a schematic diagram showing the configuration of a wire bonding apparatus to which the present invention is applied.

【図２】図１のワイヤボンディング装置を用いてのボン
ディング工程図。FIG. 2 is a bonding process diagram using the wire bonding apparatus of FIG.

【図３】図１のワイヤボンディング装置を用いてのボン
ディング工程図。FIG. 3 is a bonding process diagram using the wire bonding apparatus of FIG.

【図４】図１のワイヤボンディング装置を用いてのボン
ディング工程図。FIG. 4 is a bonding process diagram using the wire bonding apparatus of FIG.

【図５】図１のワイヤボンディング装置を用いてのボン
ディング工程図。FIG. 5 is a bonding process diagram using the wire bonding apparatus of FIG.

【図６】図１のワイヤボンディング装置を用いてのボン
ディング工程図。FIG. 6 is a bonding process diagram using the wire bonding apparatus of FIG. 1.

【図７】図１のワイヤボンディング装置を用いてのボン
ディング工程図。FIG. 7 is a bonding process drawing using the wire bonding apparatus of FIG.

【図８】図１のワイヤボンディング装置を用いてのボン
ディング工程図。FIG. 8 is a bonding process diagram using the wire bonding apparatus of FIG.

【図９】図１のワイヤボンディング装置を用いてのボン
ディング工程図。FIG. 9 is a bonding process diagram using the wire bonding apparatus of FIG. 1.

【図１０】図１のワイヤボンディング装置を用いてのボ
ンディング工程図。FIG. 10 is a bonding process diagram using the wire bonding apparatus of FIG.

【図１１】図１のワイヤボンディング装置を用いてのボ
ンディング工程図。11 is a bonding process diagram using the wire bonding apparatus of FIG. 1. FIG.

【図１２】図１のワイヤボンディング装置を用いてのボ
ンディング時の荷重の変動を示す図。FIG. 12 is a diagram showing a change in load during bonding using the wire bonding apparatus of FIG.

【図１３】従来のボンディング装置の構成を示す模式
図。FIG. 13 is a schematic diagram showing the configuration of a conventional bonding apparatus.

【図１４】図１３のワイヤボンディング装置を用いての
ボンディング工程図。FIG. 14 is a bonding process diagram using the wire bonding apparatus of FIG.

【図１５】図１２のワイヤボンディング装置を用いての
ボンディング工程図。15 is a bonding process diagram using the wire bonding apparatus of FIG.

【図１６】図１２のワイヤボンディング装置を用いての
ボンディング工程図。16 is a bonding process drawing using the wire bonding apparatus of FIG.

【図１７】図１２のワイヤボンディング装置を用いての
ボンディング工程図。FIG. 17 is a bonding process diagram using the wire bonding apparatus of FIG. 12.

【図１８】図１２のワイヤボンディング装置を用いての
ボンディング工程図。FIG. 18 is a bonding process diagram using the wire bonding apparatus of FIG. 12.

【図１９】図１２のワイヤボンディング装置を用いての
ボンディング時の荷重の変動を示す図。FIG. 19 is a diagram showing a change in load during bonding using the wire bonding apparatus of FIG.

【符号の説明】[Explanation of symbols]

１ リードフレーム ２ アイランド ３ 半導体チップ ３ａ 電極 ４ リード ５ ワイヤ ６ ワイヤボンディング装置 ７ 基礎 ８ 第１の架台 ９ 第２の架台 １０ 加熱テーブル １１ Ｘ−Ｙテーブル １２ ボンディングヘッド １３ ボンディングアーム １４ トーチ電極 １５ 位置検出器 １６ キャピラリ １７ 超音波振動子 １８ 駆動装置（ボンディングヘッド用） １９ ワイヤスプール ２０ 制御装置 ２１ ボール ３０ ワイヤボンディング装置 ３１ ボンディングヘッド ３２ 潰し板（潰し部材） ３３ 潰し板駆動装置 ３４ 制御装置 ３５ 潰しボール 1 lead frame 2 islands 3 semiconductor chips 3a electrode 4 leads 5 wires 6 Wire bonding equipment 7 basics 8 First mount 9 Second mount 10 heating table 11 XY table 12 Bonding head 13 Bonding arm 14 Torch electrode 15 Position detector 16 capillaries 17 Ultrasonic transducer 18 Drive device (for bonding head) 19 wire spool 20 Control device 21 balls 30 wire bonding machine 31 bonding head 32 Crush plate (crush member) 33 Crushing plate drive 34 Control device 35 crushed balls

Claims (4)

【特許請求の範囲】[Claims] 【請求項１】 キャピラリに保持されたワイヤを被ボン
ディング物に押し付けてボンディングするワイヤボンデ
ィング方法において、 前記ワイヤ先端にボールを形成する工程と、 このボールを潰し部材に押し付けて潰しボールとする工
程と、 この潰しボールを被ボンディング物に押し付けることで
前記ワイヤを被ボンディング物にボンディングする工程
と、 を有することを特徴とするワイヤボンディング方法。1. A wire bonding method in which a wire held by a capillary is pressed against an object to be bonded for bonding, and a step of forming a ball at the tip of the wire and a step of pressing the ball against a crushing member to form a crushed ball. And a step of bonding the wire to the object to be bonded by pressing the crushed ball against the object to be bonded. 【請求項２】 潰しボールとする工程は、ひとつの被ボ
ンディング物へのワイヤボンディングが終了後、次の被
ボンディング物上にキャピラリが移動する途中にて行な
うようにしたことを特徴とする請求項１記載のワイヤボ
ンディング方法。2. The step of forming a crushed ball is performed after the wire bonding to one object to be bonded is completed and the capillary is moved to the next object to be bonded. 1. The wire bonding method described in 1. 【請求項３】 ワイヤを保持するキャピラリと、前記ワ
イヤ先端にボールを形成するボール形成装置と、前記キ
ャピラリの移動装置とを備え、前記ボール形成装置によ
り前記ワイヤ先端に形成されたボールを前記移動装置に
より前記キャピラリを移動させることで被ボンディング
物に押し付けワイヤをボンディングするワイヤボンディ
ング装置において、 前記ワイヤ先端に形成されたボールを潰す潰し部材を設
け、前記ワイヤを被ボンディング物にボンディングする
前に前記ボールをこの潰し部材に押し付けてなることを
特徴とするワイヤボンディング装置。3. A capillary for holding a wire, a ball forming device for forming a ball at the tip of the wire, and a moving device for the capillary, wherein the ball formed at the tip of the wire is moved by the ball forming device. In a wire bonding apparatus for bonding a wire by pressing the capillary against an object to be bonded by moving the capillary by an apparatus, a crushing member that crushes a ball formed at the tip of the wire is provided, and before the wire is bonded to the object to be bonded A wire bonding device characterized in that a ball is pressed against this crushing member. 【請求項４】 キャピラリ、ボール形成装置、潰し部材
は、すべて同一の移動装置に保持されてなることを特徴
とする請求項３記載のワイヤボンディング装置。4. The wire bonding apparatus according to claim 3, wherein the capillaries, the ball forming device, and the crushing member are all held by the same moving device.
JP2001340080A 2001-11-05 2001-11-05 Method and device for wire bonding Pending JP2003142516A (en)

Priority Applications (1)

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Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001340080A JP2003142516A (en) 2001-11-05 2001-11-05 Method and device for wire bonding

Publications (1)

Publication Number Publication Date
JP2003142516A true JP2003142516A (en) 2003-05-16

Family

ID=19154334

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001340080A Pending JP2003142516A (en) 2001-11-05 2001-11-05 Method and device for wire bonding

Country Status (1)

Country Link
JP (1) JP2003142516A (en)

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