TWI775430B - Manufacturing method of semiconductor device and wire bonding apparatus - Google Patents

Abstract

The present disclosure describes a method for manufacturing a semiconductor device and a wire bonding device, which can easily form pin lines of a desired height. The manufacturing method of the semiconductor device 10 includes the first step of forming the wire portion 20b by moving the ceramic nozzle 8 to the third target point P3 while extending the wire 20 after bonding the wire 20 to the electrode 31 using the ceramic nozzle 8. The second step is to move the porcelain mouth 8 to the fourth target point P4 while extending the line 20, thereby forming a bent portion 20c; The bent portion 20c is processed into the planned cutting portion C; and in the fourth step, in order to form the stitch line 21, the nozzle 8 is raised in a state where the wire clamp 9 is closed, thereby cutting the thread 20 at the planned cutting portion C. .

Description

Manufacturing method of semiconductor device and wire bonding apparatus

The present disclosure relates to a manufacturing method of a semiconductor device and a wire-bonding device.

When manufacturing a semiconductor device, for example, in order to connect semiconductor components up and down by bonding, a pin wire extending in a rising direction from the electrode surface may be formed on the electrode surface of the semiconductor component. Such a stitch line can be formed by the method described in Patent Document 1, for example. In this method, after bonding the wire to the electrode surface using a capillary, the capillary is moved, and a damaged portion is formed on the wire using the inner edge of the capillary. Then, after setting the portion of the wire from the bonding portion to the damaged portion in a state of standing upright from the electrode surface, the wire is bent by the damaged portion by lowering the nozzle. Then, the nozzle is raised in a state where the wire clamp is closed, thereby cutting the wire at the damaged portion. Thereby, the stitch line standing up from the electrode surface is formed.

[Prior Art Literature]

[Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2007-220699

For the stitch line as described above, it is required to further increase the distance between the stitch line and the electrode surface the height of. When forming a tall stitch line by the method described in Patent Document 1, it is necessary to extend the line portion from the joint portion to the damaged portion. However, in this method, when the wire is bent by the damaged portion, the nozzle is lowered while the wire portion is standing upright from the electrode surface, so that a large force may act on the wire portion according to the lowering of the nozzle. the axial direction. Therefore, when the wire portion is extended, a problem such as buckling of the wire portion is likely to occur due to the force. In this case, a portion that is more likely to be cut than the damaged portion is generated, so that it is difficult to reliably cut the wire at the damaged portion. Therefore, it is difficult for the method to form a stitch line of a desired height.

The present disclosure describes a method for fabricating a semiconductor device and a wire bonding device, which can easily form stitch lines of a desired height.

A method of manufacturing a semiconductor device according to an aspect of the present disclosure includes: a first step of pulling the wire out to a predetermined position by moving the ceramic nozzle to the first position while extending the wire after bonding the wire to the electrode using the nipple. The length of , the first position is a position higher than the joint part of the line, and is a position deviated from the normal line of the surface of the electrode passing through the joint part; the second step is to move the porcelain nozzle to the first After positioning, move the porcelain nozzle to a second position while extending the line, thereby forming a bent portion on the line, the second position is a position higher than the first position, and is a method extending from the normal line The position deviated from the first position to the joint side when viewed in the line direction; in the third step, after forming the folded part, the lowering and rising of the mouthpiece are repeated several times along the normal line direction, whereby the folded part is formed. Processed into a part to be cut; and in the fourth step, after repeating the descending and ascending of the porcelain nozzle for many times, in order to form the stitch line, in the shape of opening the wire clip In this state, the nozzle is raised to cut the wire at the planned cutting portion.

According to the above-described manufacturing method, the thread can be reliably cut at the portion to be cut, so that the stitching thread of a desired height can be easily formed.

When moving the mouthpiece to the second position, the bent portion may also be located at a position deviated from the normal line passing through the joint portion. In this case, the occurrence of inconveniences such as buckling in the part to be formed of the stitch line can be more reliably suppressed, and the thread can be cut more reliably in the part to be cut.

When viewed from the normal direction, the moving distance of the nozzle from the first position to the second position can also be longer than the radius of the front end surface of the nozzle. In this case, the wire can be cut more reliably at the planned cutting portion.

When viewed from the normal direction, the moving distance of the mouthpiece from the first position to the second position may be the same as the moving distance of the mouthpiece from the joint portion to the first position. In this case, the wire can be cut more reliably at the planned cutting portion.

When the porcelain mouth is moved to the second position, the front end surface of the porcelain mouth can also be located just above the joint portion. In this case, a stitch line in a state standing upright from the surface of the electrode can be easily obtained.

On the substrate, a plurality of semiconductor wafers are stacked in stages such that the main surfaces of the semiconductor wafers are exposed as exposed surfaces, electrodes are provided on the exposed surfaces of the semiconductor wafers, and the first step may be performed for each semiconductor wafer. A series of steps up to the fourth step, thereby forming stitch lines for each semiconductor wafer. You can also order from the semiconductor wafer of the upper stage to the semiconductor wafer of the lower stage, or from the semiconductor wafer of the lower stage A series of steps from the first step to the fourth step are performed in order from the wafer to the semiconductor wafer of the upper stage. In this case, even in a situation where it is difficult to cut the line by the pressing action, the stitch line can be easily formed for each semiconductor wafer.

As another aspect of the present disclosure, a wire bonding device includes: a bonding unit including a nozzle configured to be relatively movable with respect to an electrode; and a control unit for controlling the operation of the bonding unit, and the control unit provides the following control signal to the bonding unit : The first control signal, after using the ceramic nozzle to join the wire to the electrode, while extending the wire, the ceramic nozzle is moved to the first position, thereby pulling the wire out to a predetermined length, and the first position is the wire The junction part is more above the position, and is a position deviated from the normal line of the surface of the electrode passing through the junction part; the second control signal, after moving the ceramic nozzle to the first position, extends the line while making the ceramic The mouth is moved to a second position, whereby a bend is formed in the line, the second position is a position higher than the first position, and viewed in the direction of the normal extending from the normal and facing the first position relative to the first position. the position where the joint part side is deviated; the third control signal, after forming the folded part, repeats the descending and rising of the nozzle along the normal line direction many times, thereby processing the folded part into a part to be cut; and the first Four control signals, after repeating the descending and ascending of the nozzle for many times, in order to form the stitch line, the nozzle is raised in the state of closing the wire clamp, thereby cutting the thread at the part to be cut.

According to the wire bonding apparatus, the wire can be reliably cut at the part to be cut, so that the stitching line of the desired height can be easily formed.

According to the present disclosure, there is provided a stitch line that can easily form a desired height A method of manufacturing a semiconductor device and a wire bonding device.

1: wire bonding device

2: Conveying unit

3: junction unit

4: Control unit

6: Mobile Mechanism

7: Joining tools

8, 108: porcelain mouth

8a: Front face

9: Wire clip

10: Semiconductor device

11a: Main side

12, 112: Semiconductor parts

12A, 12B, 12C, 12D: Semiconductor wafers

12a, 12b, 12c, 12d: exposed face

20, 120: line

20a, 21a, 120a: bonding part

20b, 20d, 21b, 120b, 120d: Line part

20c: Bending part

21, 21A, 21B, 21C, 21D: Pin line

21c: upper end

31, 31A, 31B, 31C, 31D, 131: Electrodes

120c: Damaged Section

C: Cut off scheduled part

CL: central axis

D1: normal direction

D2: Parallel axis direction

D3, D4: Axial

d1~d4: moving distance

H: height

L1, L2: length

P1: The first target point

P2: Second target point

P3: The third target point (the first position)

P4: Fourth target point (second position)

P5: Fifth target point

P6: sixth target point

P7: Seventh target point

R: radius

S11~S20: Steps

θ1~θ5: Angle

FIG. 1 is a diagram showing the configuration of a wire bonding apparatus according to an embodiment.

FIG. 2 is a diagram showing a configuration of a semiconductor device manufactured using the wire bonding apparatus shown in FIG. 1 .

FIG. 3 is a view showing the shape of the stitch line shown in FIG. 2 and the target point of the nozzle.

FIG. 4 is a flowchart showing the steps of a method of manufacturing a semiconductor device according to an embodiment.

FIGS. 5( a ), 5 ( b ), and 5 ( c ) are diagrams showing steps of a method of manufacturing a semiconductor device according to an embodiment.

FIGS. 6( a ), 6 ( b ), and 6 ( c ) are diagrams showing steps following FIGS. 5 ( a ) to 5 ( c ).

FIGS. 7( a ), 7 ( b ), and 7 ( c ) are diagrams showing steps subsequent to FIGS. 6 ( a ) to 6 ( c ).

Fig. 8 is a diagram showing the shape of a line in step (a) of Fig. 6 .

FIGS. 9( a ) and 9 ( b ) are diagrams showing the steps of the method for manufacturing the semiconductor device of the first comparative example.

FIGS. 10( a ), 10 ( b ), and 10 ( c ) are diagrams showing steps of a method of manufacturing a semiconductor device according to a second comparative example.

FIGS. 11( a ), 11 ( b ), and 11 ( c ) are diagrams showing steps following FIGS. 10 ( a ) to 10 ( c ).

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the description of the drawings, the same elements are denoted by the same symbols, and overlapping descriptions are appropriately omitted.

[Wire Bonding Device]

In the wire bonding apparatus 1 shown in FIG. 1, for example, after bonding the wire 20 to the electrode provided in the semiconductor device 10, the wire 20 is cut to a predetermined length, thereby forming a wire extending in the rising direction from the surface of the electrode. The stitch line 21 (refer to FIG. 3 ). The wire bonding apparatus 1 includes, for example, a conveying unit 2 , a bonding unit 3 , and a control unit 4 .

The conveyance unit 2 conveys the semiconductor device 10 as the part to be processed to the bonding area. The joining unit 3 includes, for example, a moving mechanism 6 , a joining tool 7 , a mouthpiece 8 and a wire clamp 9 . The moving mechanism 6 relatively moves the nozzle 8 with respect to the semiconductor device 10 . At the front end of the bonding tool 7, a mouthpiece 8 for extending the wire 20 is detachably provided. The porcelain mouth 8 has a sharp cylindrical shape. A wire 20 is inserted into the interior of the porcelain mouth 8 . The porcelain nozzle 8 provides heat, ultrasound or pressure to the wire 20 .

The wire clip 9 is arranged above the porcelain mouth 8 . The wire clip 9 is configured to be able to hold the wire 20 . In the state where the wire clamp 9 is opened, the wire 20 is not held by the wire clamp 9 , allowing the wire 20 to protrude from the porcelain nozzle 8 . When the wire clamp 9 is closed, the wire 20 is held by the wire clamp 9, and the extension of the wire 20 from the porcelain nozzle 8 is stopped. The wire 20 is a thin metal wire. For example, the wire 20 is formed of gold (Au), silver (Ag), aluminum (Al), copper (Cu), or an alloy of these. The diameter of the wire 20 is, for example, 20 μm (micrometer).

The control unit 4 controls the wire bonding device including the operation of the bonding unit 3 Set 1 for overall operation. The control unit 4 provides several control signals to the joint unit 3 . For example, the control signals include: a signal for controlling the position of the nozzle 8 relative to the semiconductor device 10 ; a signal for starting and stopping the application of heat, ultrasonic waves or pressure; 20 signal. The specific control operation of the control unit 4 will be described later.

[semiconductor device]

The semiconductor device 10 shown in FIG. 2 includes, for example, a circuit board 11 ; a semiconductor component 12 having a plurality of semiconductor chips 12A, 12B, 12C, and 12D; and a plurality of lead wires 21A, 21B, 21C, and 21D. The semiconductor component 12 is fixed to the main surface 11a of the circuit board 11 by, for example, a die bond or the like. The semiconductor component 12 has, for example, a structure in which a plurality of semiconductor wafers 12A, 12B, 12C, and 12D are stacked in multiple stages. As an example, the semiconductor component 12 is a multi-segment chip memory device.

The semiconductor wafers 12A, 12B, 12C, and 12D are stacked so as to be deviated in stages. The semiconductor wafer 12A is arranged on the main surface 11 a of the circuit board 11 . The semiconductor wafer 12B is arranged on the main surface of the semiconductor wafer 12A, and is arranged so as to be deviated from the semiconductor wafer 12A along a direction along the main surface 11 a of the circuit board 11 . The semiconductor wafer 12C is arranged on the main surface of the semiconductor wafer 12B, and is arranged so as to be deviated from the semiconductor wafer 12B along the one direction. The semiconductor wafer 12D is arranged on the main surface of the semiconductor wafer 12C, and is arranged so as to be deviated from the semiconductor wafer 12C along the one direction.

A part of the main surface of the semiconductor wafer 12A exposed from the semiconductor wafer 12B becomes the exposed surface 12a exposed from the semiconductor wafer 12B. of the semiconductor wafer 12B A part of the main surface exposed from the semiconductor wafer 12C becomes the exposed surface 12b exposed from the semiconductor wafer 12C. A part of the main surface of the semiconductor wafer 12C exposed from the semiconductor wafer 12D becomes the exposed surface 12c exposed from the semiconductor wafer 12D. The main surface of the semiconductor wafer 12D becomes the exposed surface 12d exposed to the outside of the semiconductor component 12 . An electrode 31A, an electrode 31B, an electrode 31C, and an electrode 31D are provided on the exposed surface 12a, the exposed surface 12b, the exposed surface 12c, and the exposed surface 12d, respectively. The surface of the electrode 31A constitutes the exposed surface 12a, the surface of the electrode 31B constitutes the exposed surface 12b, the surface of the electrode 31C constitutes the exposed surface 12c, and the surface of the electrode 31D constitutes the exposed surface 12d.

The stitch line 21A, the stitch line 21B, the stitch line 21C and the stitch line 21D are respectively provided on the electrode 31A, the electrode 31B, the electrode 31C and the electrode 31D. Each of the stitch threads 21A, 21B, 21C, and 21D is a part of the thread 20 cut to a predetermined length. The stitch line 21A is joined to the surface of the electrode 31A, and extends in a rising direction from the surface of the electrode 31A. The stitch line 21B is joined to the surface of the electrode 31B, and extends in a rising direction from the surface of the electrode 31B. The stitch line 21C is joined to the surface of the electrode 31C, and extends in a rising direction from the surface of the electrode 31C. The stitch line 21D is joined to the surface of the electrode 31D, and extends in a rising direction from the surface of the electrode 31D.

The upper ends of the respective stitching lines 21A, 21B, 21C, and 21D are aligned so as to be located at the same height H when the main surface 11 a of the circuit board 11 is used as a reference. Therefore, the lengths of the stitch lines 21A, 21B, 21C and 21D are different from each other. The stitch line 21A provided on the lowermost semiconductor chip 12A has the longest length, the stitch line 21B provided on the semiconductor wafer 12B on the next stage is shorter than the stitch line 21A, and the stitch line 21A provided on the next stage of the semiconductor chip has a shorter length. 12C's pins are longer than 21C's pins The length of the line 21B is shorter, and the length of the stitch line 21D provided on the uppermost semiconductor wafer 12D is the shortest. The upper ends of the stitch lines 21A, 21B, 21C, and 21D are connected to electrodes of other semiconductor components (not shown) provided on the semiconductor component 12 . Thereby, the semiconductor component 12 and the other semiconductor components are electrically connected to each other via the stitch line 21A, the stitch line 21B, the stitch line 21C, and the stitch line 21D.

Hereinafter, when it is not necessary to distinguish the stitching line 21A, the stitching line 21B, the stitching line 21C, and the stitching line 21D separately for description, these are collectively referred to as "the stitching line 21". In the case where the electrode 31D and the electrode 31D are separately described, these are collectively referred to as the "electrode 31".

FIG. 3 shows the shape of the stitch line 21 . As shown in FIG. 3 , the stitch line 21 includes a joint portion 21a and a wire portion 21b. The joint part 21a is a part which comprises the lower end part of the stitching thread 21, and corresponds to the joint part 20a (joint part) of the thread 20 mentioned later. The bonding portion 21 a is physically and electrically connected to the electrode 31 . The state of physical connection mentioned here refers to a state in which the pointer pin 21 and the electrode 31 are joined to each other. For example, the joint portion 21a may be a portion that generates resistance (reaction force) to the tensile force. In addition, the so-called electrically connected state refers to a state in which the resistance between the finger wire 21 and the electrode 31 is extremely small. The joint portion 21 a is formed by pressing a spherical Free Air Ball (FAB) formed at the tip of the wire 20 against the electrode 31 by the nozzle 8 . Therefore, the joint portion 21a has a deformed hemispherical shape in which the FAB is crushed by half.

The thread portion 21b is the body portion of the stitch thread 21, and corresponds to the thread portion 20b of the thread 20 to be described later. The wire portion 21b extends upward from the joint portion 21a. In the present embodiment, the line portion 21b extends along the normal line direction D1 in which the normal line of the surface of the electrode 31 extends. In other words, the wire portion 21b is in a state of standing upright with respect to the surface of the electrode 31 . The cross-section of the wire portion 21b is circular, and the cross-sectional shape of the wire 20 is maintained. The upper end portion 21c of the wire portion 21b has a shape in which the tip is tapered toward the upper end of the wire portion 21b. The upper end portion 21c is a cut portion of the thread 20 when the stitch thread 21 is formed, and corresponds to a bent portion 20c of the thread 20 to be described later. The height from the surface of the electrode 31 to the upper end of the stitch line 21 , that is, the entire length of the stitch line 21 can be set to, for example, 100 μm or more.

[Manufacturing method of semiconductor device]

The semiconductor device 10 is manufactured by the wire bonding apparatus 1 . Hereinafter, the control operation of the control unit 4 in the wire bonding apparatus 1 and the manufacturing method of the semiconductor device 10 will be described.

First, referring to FIG. 3 , on the one hand, the first target point P1 to the seventh target point P7 for the movement of the front end of the mouthpiece 8 will be described in detail. FIG. 3 shows the shape of the stitch line 21 and shows the first target point P1 to the seventh target point P7. The control unit 4 has information related to the preset first target point P1 to the seventh target point P7. The control unit 4 provides a control signal to the bonding unit 3 in a manner that the front end of the ceramic nozzle 8 moves to the first target point P1 to the seventh target point P7 in sequence. Further, the control unit 4 provides the joining unit 3 with a control signal for allowing and stopping the extension of the wire 20 during the movement. Furthermore, the control unit 4 provides the joining unit 3 with a control signal for controlling to allow and stop the supply of ultrasonic waves or the like from the porcelain nozzle 8 . In addition, the front end of the mouthpiece 8 refers to the position of the front end surface 8a (refer to FIG. 8 ) of the mouthpiece 8 . The front end surface 8a is, for example, a plane parallel to the surface of the electrode 31, and is circular when viewed in the normal direction D1. Therefore, the front end of the mouthpiece 8 can be, for example, the center of the front end surface 8a when viewed from the normal direction D1. heart position.

In addition, in the following description, the case where the semiconductor component 12 is fixed and the nozzle 8 is moved is illustrated. However, the trajectory drawn by the first target point P1 to the seventh target point P7 may be drawn according to the relative positional relationship between the semiconductor component 12 and the nozzle 8 . That is, as described below, only the mouthpiece 8 can be moved to draw a trajectory. In addition, a trajectory may be drawn by moving both the semiconductor component 12 and the nozzle 8 . For example, the movement in the up-down direction may be handled by the movement of the nozzle 8 , and the movement in the left-right direction may be handled by the movement of the semiconductor component 12 .

The first target point P1 represents the position where the wire 20 is bonded to the electrode 31 . In other words, the first target point P1 indicates the position of the joint portion 21a where the stitch line 21 is formed, that is, the position of the joint portion 21a. The first target point P1 may be the position of the center of the joint portion 21a on the surface of the electrode 31 when viewed from the normal direction D1.

The second target point P2 is a position directly above the first target point P1. In other words, the second target point P2 is a position passing through the first target point P1 on the normal line of the surface of the electrode 31 . In the following description, the direction along the normal line of the surface of the electrode 31 away from the electrode 31 is referred to as the "upward direction", and the direction along the normal line toward the electrode 31 is referred to as the "downward direction". In this way, the second target point P2 can also be described as a position deviated in the upward direction relative to the first target point P1.

The third target point P3 (first position) is a position deviated from the normal line of the electrode 31 passing through the first target point P1 and the second target point P2. That is, the third target point P3 is set at a position along the direction in which the parallel axis perpendicular to the normal line of the electrode 31 extends (hereinafter referred to as “parallel axis direction D2”) with respect to the second target point P2 and away from a given distance. In the following description, the direction from the electrode 31A toward the electrode 31B along the parallel axis direction D2 is referred to as the "right direction", and the direction from the electrode 31B toward the electrode 31A along the parallel axis direction D2 is referred to as the "left direction". Therefore, the third target point P3 can also be said to be a position away from the second target point P2 by a predetermined distance in the left direction. The distance from the first target point P1 to the second target point P2, and the distance from the second target point P2 to the third target point P3 may also be based on the height of the stitch line 21 from the surface of the electrode 31 (the height of the stitch line 21). full length). The distance from the second target point P2 to the third target point P3 may be the same as the distance from the first target point P1 to the second target point P2, and may be longer or shorter.

The fourth target point P4 (second position) is higher than the third target point P3 and deviated from the third target point P3 to the first target point P1 side when viewed from the normal direction D1. That is, the fourth target point P4 is set at a position deviated upward in the normal line direction D1 with respect to the third target point P3 and deviated toward the first target point P1 side in the parallel axis direction D2 with respect to the third target point P3 . The fourth target point P4 can also be said to be set at a position away from the third target point P3 by a predetermined distance in the upward direction and the right direction, respectively. In this embodiment, the fourth target point P4 is set at a position directly above the first target point P1 and the second target point P2. In other words, the fourth target point P4 is set at a position on the normal line of the electrode 31 passing through the first target point P1 and the second target point P2. Therefore, the first target point P1, the second target point P2, and the fourth target point P4 are set on the same line. The position of the fourth target point P4 does not need to be directly above the first target point P1 and the second target point P2, and can also be set at a position that deviates from the normal line of the electrode 31 passing through the first target point P1 and the second target point P2. Location. For example, the When viewed from the normal direction D1, the positions of the four target points P4 may be the positions between the third target point P3 and the first target point P1 and the second target point P2, or may be relative to the third target point P3 is further away from the positions of the first target point P1 and the second target point P2.

The fifth target point P5 is a position deviated from the fourth target point P4 in the downward direction. Therefore, the fifth target point P5 is set on the same line as the first target point P1, the second target point P2, and the fourth target point P4 in the normal direction. In the present embodiment, the fifth target point P5 is set at a position higher than the second target point P2. Specifically, the fifth target point P5 is set at a position between the second target point P2 and the fourth target point P4 in the normal line direction D1. The fifth target point P5 can also be set at a lower position than the second target point P2. For example, the fifth target point P5 may also be set at a position between the first target point P1 and the second target point P2 in the normal direction D1.

The sixth target point P6 is a position deviated in the upward direction with respect to the fourth target point P4. The seventh target point P7 is a position deviated in the upward direction with respect to the sixth target point P6. Therefore, in the normal direction, the first target point P1, the second target point P2, the fourth target point P4, the fifth target point P5, the sixth target point P6 and the seventh target point P7 are set on the same line. When the nozzle 8 moves to the seventh target point P7 , the thread 20 is cut, thereby forming the stitch thread 21 .

Then, on the one hand, referring to FIG. 4 , FIG. 5( a ) to FIG. 5( c ), FIG. 6( a ) to FIG. 6( c ), and FIG. 7( a ) to FIG. 7( c ), On the one hand, the control operation of the control unit 4 and the manufacturing method of the semiconductor device 10 will be described. Hereinafter, from the semiconductor wafer 12A of the lowermost stage to the semiconductor wafer 12D of the uppermost stage The case where the stitch line 21A, the stitch line 21B, the stitch line 21C, and the stitch line 21D are sequentially formed will be described. However, since the steps of forming the stitch lines 21A, 21B, 21C, and 21D are the same, an example in which the stitch lines 21A are formed on the electrodes 31A of the semiconductor wafer 12A will be described as a representative example.

<First step>

The control unit 4 provides the first control signal to the joint unit 3 . The first control signal includes the action of moving the mouthpiece 8 to the first target point P1 (step S11 ), the action of moving the mouthpiece 8 to the second target point P2 (step S12 ), and the action of moving the mouthpiece 8 to the third target The operation of point P3 (step S13 ), the operation of radiating ultrasonic waves from the nozzle 8 for a predetermined period, and the operation of allowing the extension of the wire 20 from the nozzle 8 are performed.

After receiving the first control signal, the bonding unit 3 forms a spherical FAB at the front end of the wire 20 extending from the nozzle 8 (refer to FIG. 7( c )), and then moves the nozzle 8 to the first target point P1 ( Refer to step S11, (a) of FIG. 5). At this time, the nozzle 8 presses the wire 20 against the electrode 31 . Then, the bonding unit 3 radiates ultrasonic waves from the mouthpiece 8 for a predetermined period. Thereby, the FAB of the wire 20 is deformed and joined to the electrode 31A, thereby forming the joining portion 20a.

Next, the joining unit 3 moves the mouthpiece 8 from the first target point P1 to the second target point P2 (refer to step S12 and FIG. 5( b )). Furthermore, the joining unit 3 allows the wire 20 to be drawn out from the porcelain mouth 8 by setting the wire clip 9 in the open state. That is, the joining unit 3 moves the mouthpiece 8 from the first target point P1 to the second target point P2 while extending the wire 20 .

Then, while the joint unit 3 extends the wire 20, the nozzle 8 is moved from the second The target point P2 moves to the third target point P3 (refer to step S13 and FIG. 5( c )). At this time, the wire 20 is pulled out by a predetermined length to form a wire portion 20b extending from the joint portion 20a to the mouthpiece 8 . The thread portion 20b corresponds to the thread portion 21b serving as the body portion of the stitch thread 21 as described above. Therefore, the thread portion 20b can also be referred to as a predetermined stitch line forming portion in which the stitch line 21 is formed.

In step S12 and step S13, as long as the mouthpiece 8 can be moved from the first target point P1 to the third target point P3. For example, instead of step S12 and step S13, the step of directly moving from the first target point P1 to the third target point P3 may be performed. In other words, the mouthpiece 8 may not pass through the second target point P2. For example, the mouthpiece 8 can be moved along a linear trajectory connecting the first target point P1 and the third target point P3, or the mouthpiece 8 can be moved along an arc passing through the first target point P1 and the third target point P3 track moves.

<Second step>

The control unit 4 provides the second control signal to the joint unit 3 . The second control signal includes the action of moving the nozzle 8 to the fourth target point P4 and the action of allowing the wire 20 to be extended from the nozzle 8 (step S14 ).

The joining unit 3 that has received the second control signal moves the nozzle 8 from the third target point P3 to the fourth target point P4 while extending the wire 20 (see step S14 and FIG. 6( a )). At this time, the bent portion 20c is formed above the wire portion 20b, and the wire portion 20d is formed above the bent portion 20c (step S15). The bent portion 20c is located between the wire portion 20b and the wire portion 20d, and the axial direction (extending direction) of the wire portion 20d extending from the bent portion 20c to the mouth 8 is from the joint portion 20a to the bent portion 20c. The axial direction (extending direction) of the portion 20b varies. The bending portion 20c is changed by the bending degree of the wire 20. large to form. That is, when the degree of bending of the bending portion 20c increases, the deformation of the bending portion 20c changes from elastic deformation to plastic deformation. Then, when the bending portion 20c is plastically deformed, the bending portion 20c does not return to the original shape (linear shape), but maintains the bent shape (arc shape).

In steps S14 and S15, in accordance with the movement of the nozzle 8 from the third target point P3 to the fourth target point P4, the bent portion 20c does not stay at the third target point P3, but starts from the third target point P3. Move slightly toward the fourth target point P4 side. The moved bent portion 20c is not located on the normal line of the electrode 31 passing through the joint portion 20a. That is, the bent portion 20c is located at a position deviated from the normal line passing through the joint portion 20a. Therefore, the axial direction of the wire portion 20b extending from the joint portion 20a to the bent portion 20c and the axial direction of the wire portion 20d extending from the bent portion 20c to the mouth 8 are inclined from the normal direction D1, respectively. The more specific shape of the wire 20 in step S14 and step S15 will be described later.

In step S14, the nozzle 8 can be moved along a straight line connecting the third target point P3 and the fourth target point P4, or the nozzle 8 can be moved along the line passing through the third target point P3 and the fourth target point P4. The arc path moves. In addition, in step S14, the mouthpiece 8 may not be moved directly from the third target point P3 to the fourth target point P4. That is, the mouthpiece 8 may be moved from the third target point P3 to the fourth target point P4 after passing through other target points. For example, after moving the nozzle 8 to the right direction from the third target point P3 to another target point, the nozzle 8 can also be moved upward from the other target point to the fourth target point P4.

<The third step>

The control unit 4 provides the third control signal to the joint unit 3 . third control message The steps include stopping the action of extending the line 20 from the mouthpiece 8, moving the mouthpiece 8 to the fifth target point P5 (step S15), and moving the mouthpiece 8 between the fifth target point P5 and the sixth target point P6 the action of moving back and forth between the two (step S16).

The joining unit 3 that has received the third control signal is set to the state of closing the wire clamp 9 , so that the extension of the wire 20 from the porcelain nozzle 8 is stopped. Furthermore, the joining unit 3 lowers the mouthpiece 8 from the fourth target point P4 to the fifth target point P5 (refer to step S16 and FIG. 6( b )). At this time, the wire portion 20b and the wire portion 20d are bent to each other with the bent portion 20c as a starting point. In other words, the angle between the wire portion 20b and the wire portion 20d becomes smaller, and the degree of bending of the bent portion 20c becomes larger. Then, a tensile force acts on the outer side (left side) of the folded portion 20c, while a compressive force acts on the inner side (right side) of the folded portion 20c. As a result, a part of the bending part 20c is deformed so as to be crushed in a direction perpendicular to the axial direction of the bending part 20c, and the part becomes thinner than the other parts of the bending part 20c. That is, the mechanical strength of the bent portion 20c is lower than the mechanical strength of the other parts of the wire 20 .

Then, the joining unit 3 makes the mouthpiece 8 move back and forth between the fourth target point P4 and the fifth target point P5 in a state where the extension of the wire 20 from the mouthpiece 8 is stopped (refer to step S17 and FIG. 6( c ) ). That is, the mouthpiece 8 moves from the fifth target point P5 to the fourth target point P4 and moves from the fourth target point P4 to the fifth target point P5 repeatedly. In this way, in step S16 and step S17, the descending of the nozzle 8 from the fourth target point P4 to the fifth target point P5 and the rising of the nozzle 8 from the fifth target point P5 to the fourth target point P4 are repeated several times. . The bending operation of the line part 20b and the line part 20d starting from the bending part 20c is performed a plurality of times by the repeated operation of the descending and ascending of the mouthpiece 8 . Repeated stress acts on the bent portion 20c by this bending operation.

The repeated stress causes fatigue of the bent portion 20c. This fatigue further reduces the mechanical strength of the bent portion 20c. As a result, the mechanical strength of the bent portion 20c is lower than the mechanical strength of the connecting portion of the joint portion 20a with the wire portion 20b. That is, the bent portion 20c is processed so that the mechanical strength is lower than the planned cutting portion C of the joint portion 20a. The planned cutting portion C is a predetermined portion for cutting the wire 20 in steps S19 and S20 (refer to FIG. 7( b )) to be described later. In step S16 and step S17, the repeated operation of descending and ascending of the nozzle 8 is repeated a plurality of times until the mechanical strength of the part C to be cut is lower than the mechanical strength of the joint part 20a.

The mechanical strength of the connecting portion of the joint portion 20a to the wire portion 20b tends to be lower than that of other portions of the wire 20 . As described above, the joint portion 20a is formed by pressing the FAB formed at the tip of the wire 20 against the electrode 31A by the nipple 8 . Here, when the FAB is bonded to the electrode 31A, the size of the metal crystal in the FAB changes, so that the size of the metal crystal is different between the FAB and the portion of the wire 20 other than the FAB. The mechanical strength tends to decrease in the boundary portion of the wire 20, which is the boundary where the size of the metal crystal changes. This boundary part corresponds to the connection part of the joint part 20a and the wire part 20b. Therefore, the mechanical strength of the connecting portion is easily reduced compared to other portions of the wire 20 . Therefore, if the wire 20 is simply pulled upward without reducing the mechanical strength of other parts of the wire 20 other than the connection portion, the wire 20 is easily cut at the connection portion. Therefore, by making the mechanical strength of the portion C to be cut lower than the mechanical strength of the connecting portion of the joint portion 20a, the wire 20 is not cut at the connecting portion, but the wire 20 is cut at the portion C to be cut. Cut off reliably.

In this embodiment, the nozzle 8 is set between the fourth target point P4 and the fifth target Since the point P5 moves back and forth, the moving distance of the nozzle 8 from the fourth target point P4 to the fifth target point P5 is the same as the moving distance of the nozzle 8 from the fifth target point P5 to the fourth target point P4. . However, these moving distances do not have to be the same as each other, and may be different from each other, and may be changed every time the nozzle 8 is repeatedly lowered and raised. In the present embodiment, when the nozzle 8 is repeatedly lowered and raised, the clamp 9 is closed. That is, in a state in which the extension of the wire 20 from the nozzle 8 is stopped, the descending and ascending of the nozzle 8 are repeated. Thereby, since the cyclic stress can effectively act on the bent portion 20c, the bent portion 20c can be more reliably processed into the planned cutting portion C having a lower mechanical strength than the joint portion 20a.

<Fourth step>

The control unit 4 provides the fourth control signal to the bonding unit 3 . The fourth control signal includes the action of moving the mouthpiece 8 to the sixth target point P6 (step S18 ) and the action of moving the mouthpiece 8 to the seventh target point P7 (step S19 ).

The engaging unit 3 that has received the fourth control signal moves the nozzle 8 from the fifth target point P5 to the sixth target point P6 in a state where the extension of the wire 20 from the nozzle 8 is stopped (refer to step S18 , FIG. 7 ( a)). At this time, the line portion 20b, the planned cutting portion C, and the line portion 20b are stretched upward in accordance with the rise of the mouthpiece 8, and are in a state along the normal line direction D1.

Next, the joining unit 3 moves the mouthpiece 8 from the sixth target point P6 to the seventh target point P7 in a state where the extension of the wire 20 from the mouthpiece 8 is stopped (see step S19 and FIG. 7( b )). That is, the rising of the mouthpiece 8 is further raised from the state shown in FIG. 7( a ). At this time, in accordance with the rise of the mouthpiece 8, the line 20 is in the axial direction (upward direction). stretched. Here, the mechanical strength of the planned cutting portion C is lower than the mechanical strength of the joint portion 20a. That is, the mechanical strength of the portion C to be cut is the state where the mechanical strength is most reduced as compared with other portions of the wire 20 . Therefore, when the wire 20 is stretched in the axial direction, the wire 20 is cut at the planned cutting portion C where the mechanical strength is the lowest. Thereby, the stitch line 21A is formed on the electrode 31A (step S20).

Next, the control unit 4 moves the nozzle 8 to the eighth target point P8 just above the electrode 31B of the next stage of the semiconductor wafer 12B after forming the FAB at the front end of the line 20 . Then, a series of steps from step S11 to step S20 are performed again for the electrode 31B, thereby forming the stitch line 21B on the electrode 31B. Then, a series of steps from step S11 to step S20 are performed again for the electrode 31C, whereby the stitch line 21C is formed on the electrode 31C. Then, a series of steps from step S11 to step S20 are performed again for the electrode 31D, thereby forming the stitch line 21D on the electrode 31D. Through the above steps, the semiconductor device 10 shown in FIG. 2 can be obtained. The order of forming the stitch lines 21 is not limited to the above example. For example, the stitch line 21D, the stitch line 21C, the stitch line 21B, and the stitch line 21A may be formed sequentially from the uppermost semiconductor chip 12D to the lowermost semiconductor chip 12A, and the stitch line 21 may be formed in any order.

Here, the shape of the line 20 in steps S14 and S15 will be described in detail with reference to FIG. 8 . In a state where the mouthpiece 8 is located at the fourth target point P4, the wire 20 includes a joint portion 20a, a wire portion 20b, a bent portion 20c, and a wire portion 20d.

The wire portion 20b is a portion of the wire 20 that extends continuously from the joint portion 20a to the bent portion 20c. The axial direction D3 of the line portion 20b is inclined with respect to the normal line direction D1 and the axis-parallel direction D2. That is, the axial direction D3 of the wire portion 20b includes the normal direction D1 and the components in the direction parallel to the axis D2. The angle θ1 formed by the axial direction D3 of the line portion 20b and the normal line direction D1 is within a range of more than 0° and less than 90°. In other words, the angle θ1 is an acute angle. The angle θ1 can be, for example, within a range of 15° or more and 65° or less, and preferably within a range of 25° or more and 40° or less. The angle θ2 formed by the axial direction D3 of the wire portion 20b and the axis-parallel direction D2 is also in the range of more than 0° and less than 90°. The angle θ2 can be, for example, within a range of 25° or more and 75° or less, and preferably within a range of 25° or more and 40° or less. The angle θ2 may be different from the angle θ1, or may be the same as the angle θ1.

The line portion 20d is a portion of the line 20 that extends continuously from the bent portion 20c to the mouth 8 . The axial direction D4 of the line portion 20d is inclined with respect to the normal line direction D1 and the axis-parallel direction D2. That is, the axial direction D4 of the wire portion 20d includes a component in the normal line direction D1 and a component in the parallel axis direction D2. The angle θ3 formed by the axial direction D4 of the line portion 20d and the normal line direction D1 is within a range of more than 0° and less than 90°. The angle θ3 can be, for example, within a range of 15° or more and 65° or less, and preferably within a range of 25° or more and 40° or less. The angle θ4 formed by the axial direction D4 of the wire portion 20d and the axis-parallel direction D2 is also in the range of more than 0° and less than 90°. The angle θ4 can be, for example, within a range of 25° or more and 75° or less, and preferably within a range of 25° or more and 40° or less. The angle θ4 may be different from the angle θ3, or may be the same as the angle θ3.

The axial direction D4 of the wire portion 20d intersects the axial direction D3 of the wire portion 20b. That is, the axial direction D4 of the wire portion 20d is different from the axial direction D3 of the wire portion 20b. The angle θ5 formed by the axial direction D4 of the wire portion 20d and the axial direction D3 of the wire portion 20b is represented by the total value of the angle θ2 and the angle θ4. The angle θ5 is within a range of more than 0° and less than 180°. Angle θ5 case If it can be set in the range of 50 degrees or more and 150 degrees or less, it is preferable to set it in the range which can be 50 degrees or more and 80 degrees or less.

In this embodiment, the angle θ1 is the same as the angle θ3, and the angle θ2 is the same as the angle θ4. That is, the shape of the wire portion 20d and the shape of the wire portion 20b are symmetrical with respect to the parallel axis passing through the center of the bent portion 20c. Therefore, the length in the axial direction D3 of the wire portion 20b is the same as the length in the axial direction D4 of the wire portion 20d. In this case, the length L1 from the parallel axis passing through the vertical center of the bent portion 20c to the surface of the electrode 31A is the same as the length L2 from the parallel axis to the front end surface 8a of the mouthpiece 8 . That is, the ratio (L1/L2) of the length L1 to the length L2 becomes 1 (that is, L1:L2=1:1). As an example, the length L1 and the length L2 are each 300 μm. The length L1 and the length L2 need not be the same as each other, and may be different from each other. The ratio (L1/L2) of the length L1 to the length L2 can be set in the range of 0.5 or more and 2.0 or less, preferably in the range of 0.7 or more and 1.5 or less. Each of the length L1 and the length L2 may be, for example, within a range of 200 μm or more and 400 μm or less, or preferably within a range of 250 μm or more and 350 μm or less.

The length in the axial direction D3 of the line portion 20b corresponds to the distance from the first target point P1 to the third target point P3. That is, the length of the line portion 20b in the axial direction D3 is based on the moving distance d1 of the mouthpiece 8 along the normal line direction D1 from the first target point P1 to the third target point P3, and the distance from the first target point P1 to the The moving distance d2 of the mouthpiece 8 along the parallel axis direction D2 to the third target point P3 is determined. The moving distance d1 can also be described as the moving distance of the nozzle 8 from the first target point P1 to the third target point P3 when viewed from the axis-parallel direction D2. The moving distance d2 can also be described as self-determination The moving distance of the nozzle 8 from the first target point P1 to the third target point P3 when viewed in the line direction D1.

The length of the axial direction D4 of the line portion 20d corresponds to the distance from the third target point P3 to the fourth target point P4. That is, the length in the axial direction D4 of the line portion 20d is based on the moving distance d3 of the mouthpiece 8 along the normal line direction D1 from the third target point P3 to the fourth target point P4, and the distance from the third target point P3 to the The moving distance d4 of the mouthpiece 8 along the axis-parallel direction D2 to the fourth target point P4 is determined. The moving distance d3 can also be described as the moving distance of the nozzle 8 from the third target point P3 to the fourth target point P4 when viewed from the axis-parallel direction D2. The moving distance d4 can also be described as the moving distance of the nozzle 8 from the third target point P3 to the fourth target point P4 when viewed from the normal direction D1.

In the present embodiment, the moving distance d2 is the same as the moving distance d4 , and the moving distance d2 and the moving distance d4 are respectively longer than the radius R of the front end surface 8 a of the nozzle 8 . The radius R of the front end surface 8a is, for example, 20 μm. In addition, the moving distance d3 is slightly longer than the moving distance d1. As described above, when the mouthpiece 8 is moved from the third target point P3 to the fourth target point P4, the bent portion 20c is slightly deviated from the third target point P3 to the fourth target point P4 side. The movement distance d3 is set to be longer than the movement distance d1 in consideration of the amount of deviation from the third target point P3 to the upward bending portion 20c at this time. The moving distance d3 may be the same as the moving distance d1, or may be shorter. The moving distance d2 may not be the same as the moving distance d4, and may be longer or shorter than the moving distance d4. The moving distance d2 may also be longer than the moving distance d1. In this case, the angle θ2 can be reduced. That is, the degree of bending of the bending portion 20c can be increased. Thereby, the bent portion 20c can be easily formed.

In a state where the mouthpiece 8 is located at the fourth target point P4, the front end surface 8a of the mouthpiece 8 is located directly above the joint portion 20a. The state in which the front end surface 8a is located directly above the joint portion 20a refers to a state in which the joint portion 20a is entirely accommodated inside the front end surface 8a when viewed from the normal direction D1, that is, the electrode passing through the joint portion 20a. A state in which all the normal lines of 31 pass through the inside of the front end surface 8a. In the present embodiment, when viewed from the normal direction D1, the position of the mouthpiece 8 is set so that the center axis CL of the front end surface 8a passes through the center of the joint portion 20a, but as long as the front end surface 8a is located at the joint portion 20a In the directly above state, the center axis CL of the front end surface 8a may be deviated from the center of the joint portion 20a.

The effects of the manufacturing method of the semiconductor device 10 and the wire bonding apparatus 1 of the present embodiment described above will be described together with the problems of the comparative example.

FIGS. 9( a ) and 9 ( b ) show the steps of the method for manufacturing the semiconductor device of the first comparative example. This manufacturing method is different from the manufacturing method of the semiconductor device 10 of the present embodiment in that the bent portion is not formed on the wire. In the manufacturing method of the first comparative example, first, the wire 120 is bonded to the electrode 131 of the semiconductor component 112 using the ceramic nozzle 108 to form the joint 120a, and then the ceramic nozzle 108 is raised while extending the wire 120, thereby forming a self-contained structure. The joint portion 120a is a wire portion 120b extending upward (see FIG. 9( a )). Next, the mouthpiece 108 is raised in a state where the wire clamp is closed, thereby cutting the wire 120 (refer to FIG. 9( b )). Here, as described above, the connection portion between the bonding portion 120 a and the wire portion 120 b is a portion where the size of the metal crystals varies, so the mechanical strength of the connection portion is lower than that of other portions of the wire 120 . Therefore, when the mouthpiece 108 is simply raised in this state, as shown in FIG. 9( b ), the wire 120 is cut at the connection portion. Therefore, in the manufacturing method of the semiconductor device of the first comparative example, it is difficult to form the stitch line extending in the rising direction from the electrode 131 .

FIGS. 10( a ) to 10 ( c ) show the steps of the method for manufacturing the semiconductor device of the second comparative example. FIGS. 11( a ) to 11( c ) show steps subsequent to the steps shown in FIGS. 10( a ) to 10( c ). This manufacturing method is the same as the manufacturing method of the present embodiment in that the bent portion (damaged portion) is formed on the wire. However, this manufacturing method is different from the manufacturing method of the present embodiment in that the wire is bent in a state where the wire is made to stand upright from the electrode. In the manufacturing method of the second comparative example, first, the wire 120 is bonded to the electrode 131 of the semiconductor component 112 using the ceramic nozzle 108 to form the bonding portion 120a, and then the ceramic nozzle 108 is raised while extending the wire 120, thereby forming a self- The wire portion 120b (refer to FIG. 10( a )) from which the joint portion 120a extends upward. Next, the mouthpiece 108 is moved to the left, and then descends (see FIG. 10( b )). At this time, a damaged portion 120c is formed on the line 120 by the inner edge of the tip of the mouthpiece 108 (see FIG. 10( c )). Next, after raising the mouthpiece 108 while extending the wire 120, the mouthpiece 108 is moved to the right. At this time, the line portion 120 b is in a state along the normal line direction of the surface of the electrode 131 . In other words, the wire portion 120b is in a state of standing upright from the surface of the electrode 131 .

Next, the mouthpiece 108 is lowered to bend the wire 120 at the damaged portion 120c (see FIG. 11( a )). That is, the wire portion 120d is bent toward the wire portion 120b with the damaged portion 120c as a starting point. At this time, the axial direction of the wire portion 120b is along the electrode The state of the normal direction of the surface of 131. That is, the axial direction of the line portion 120b is the same direction as the descending direction of the nipple 108 (ie, the pressing direction of the nipple 108) which descends along the normal line direction. In this case, the axial force of the wire portion 120b generated in accordance with the pressing force of the mouthpiece 108 increases. When the axial force of the wire portion 120b increases, the wire portion 120b tends to buckle (see FIG. 11( b )). When bending occurs in the wire portion 120b, the bending portion 120e is formed in the wire portion 120b due to the bending. At this time, according to the lowering of the mouthpiece 108, stress acts on the bent portion 120e, and this stress causes the mechanical strength of the bent portion 120e to decrease. If the wire clamp is closed and the mouthpiece 108 is raised in this state, the wire 120 may be cut at the bent portion 120e instead of the damaged portion 120c (see FIG. 11( c )). That is, there is a possibility that the wire 120 cannot be cut at the target position (damaged portion 120c). In this case, the stitch line 121 is formed below the target height. Therefore, in the manufacturing method of the semiconductor device of the second comparative example, it is difficult to form a stitch line of a desired height.

In the manufacturing method of the semiconductor device 10 and the wire bonding apparatus 1 of the present embodiment, when the wire 20 forms the bent portion 20c, the nozzle 8 is moved to the fourth target point P4 after passing through the third target point P3. Thereby, when the mouthpiece 8 is moved to the fourth target point P4, the axial direction D3 of the wire portion 20b can be in a state inclined from the normal direction D1. In this case, the axial direction D3 of the wire portion 20b is different from the pressing direction of the mouthpiece 8 (that is, the normal line direction D1 in which the mouthpiece 8 descends), so that the wire portion 20b is less likely to bend or the like when the mouthpiece 8 is lowered. Bad condition. That is, in the state where the axial direction D3 of the wire portion 20b is different from the pressing direction of the mouthpiece 8, the axial force of the wire portion 20b generated according to the pressing force of the mouthpiece 8 is reduced, so that the wire portion 20b is less likely to buckle. If such inconveniences such as buckling are suppressed, the wire 20 can be suppressed from reaching the planned cutting portion C when the nozzle 8 is raised. The state of affairs where the outer part was cut off. As a result, the thread 20 can be reliably cut at the portion C to be cut, so that the stitching thread 21 of a desired height can be easily formed.

Furthermore, in the manufacturing method of the semiconductor device 10 and the wire bonding apparatus 1 of the present embodiment, unlike the case of using the method of cutting the wire 20 by pressing the wire 20 against the surrounding pressing portion, the wire 20 is cut by pressing the wire 20 in the air. The thread 20 is cut by the repeated movements of the lowering and raising of the nozzle 8 . That is, the wire 20 is cut only by the moving operation of the nozzle 8 in the air without performing the pressing operation of pressing the wire 20 to the pressing part. In the case of performing the pressing operation of pressing the wire to the pressing portion, the wire is pressed to the pressing portion by the porcelain nozzle, thereby forming a thin-walled portion on the wire. In this thin-walled portion, the mechanical strength is lower than that of other parts of the wire, so that the wire can be cut at the thin-walled portion by raising the nozzle after forming the thin-walled portion. When such a pressing operation is performed, in order to press the wire, it is necessary to secure a pressing portion having a certain wide area around the joint portion of the wire. However, it may be difficult to perform the pressing action when the position of the pressing portion can be ensured to be limited. For example, if the distance from the joining part of the wire to the pressing part is far away to some extent, the parts provided between the joining part of the wire and the pressing part may become an obstacle, and the movement from the joining part to the pressing part may not be performed. Squeeze action. Furthermore, if the position of the pressing portion is limited, the position of the thin portion formed in the pressing portion is limited, and it is difficult to form a stitch line of a desired height. On the other hand, in the manufacturing method of the semiconductor device 10 and the wire bonding apparatus 1 of the present embodiment, as described above, the wire 20 can be cut only by the operation of the ceramic nozzle 8 in the air, so even if it is difficult to When the thread 20 is pressed by the pressing action of the pressing portion, the stitching thread 21 of the desired height can also be easily formed.

In this embodiment, when moving the mouthpiece 8 to the fourth target point P4, The bent portion 20c is located at a position deviated from the normal line of the electrode 31 passing through the joint portion 20a. In this case, when the mouthpiece 8 is moved to the fourth target point P4, the state in which the axial direction D3 of the wire portion 20b is inclined from the normal direction D1 can be more reliably maintained. In other words, the state in which the axial direction D3 of the wire portion 20b is different from the pressing direction of the mouthpiece 8 can be more reliably maintained. As a result, the occurrence of inconveniences such as buckling of the wire portion 20b can be more reliably suppressed, and the wire 20 can be cut more reliably at the planned cutting portion C.

In this embodiment, when viewed from the normal direction D1 , the moving distance of the nozzle 8 from the third target point P3 to the fourth target point P4 is longer than the radius of the front end surface 8 a of the nozzle 8 . In this case, the situation in which the length of the line part 20d from the mouthpiece 8 to the bent part 20c becomes extremely short can be suppressed. Thereby, it is possible to suppress a situation in which the cyclic stress generated in the bent portion 20c becomes extremely small. As a result, the bent portion 20c can be more reliably processed into the planned cutting portion C having a lower mechanical strength than the joining portion 20a, so that the wire 20 can be cut more reliably at the planned cutting portion C.

In the present embodiment, when viewed from the normal direction D1, the moving distance of the nozzle 8 from the third target point P3 to the fourth target point P4 and the ceramic nozzle 8 from the joint 20a to the third target point P3 The moving distance of the mouth 8 is the same. In this case, the length of the line part 20d from the mouthpiece 8 to the bent part 20c can be made the same as the length of the line part 20b from the joint part 20a to the bent part 20c. Thereby, it is possible to suppress a situation in which the cyclic stress generated in the bent portion 20c is reduced. As a result, the bent portion 20c can be processed more reliably into the planned cutting portion C having a lower mechanical strength than the joining portion 20a, so that the wire 20 can be cut at the planned cutting portion C more reliably.

In this embodiment, when moving the mouthpiece 8 to the fourth target point P4, The mouthpiece 8 is located directly above the joint portion 20a. In this case, the wire portion 20b can be set upright with respect to the surface of the electrode 31 . By closing the wire clip 9 in this state and raising the nozzle 8, the stitching wire 21 in the state standing upright from the surface of the electrode 31 can be easily obtained.

In this embodiment, by performing a series of steps from step S11 to step S20 for the semiconductor wafer 12A, the semiconductor wafer 12B, the semiconductor wafer 12C, and the semiconductor wafer 12D of the semiconductor component 12, respectively, the semiconductor wafer 12A, the semiconductor wafer 12B, the semiconductor wafer 12B, the semiconductor wafer 12B, the semiconductor wafer 12B, the semiconductor wafer 12B, the semiconductor wafer 12B, the The wafer 12C and the semiconductor wafer 12D are respectively formed with stitch lines 21 . In addition, a series of steps from step S11 to step S20 are sequentially performed from the lowermost semiconductor wafer 12A to the uppermost semiconductor wafer 12D. In the semiconductor component 12, in the case of using the method of cutting the wire 20 by the pressing action of the ceramic nozzle 8 that presses the wire 20 against the surrounding pressing portion, it is considered that the wire 20 has a wide area to some extent. The main surface 11a of the circuit board 11 is used as a pressing portion. However, in this method, if the stitch line 21B is to be formed on the upper semiconductor wafer 12B after the stitch line 21A is formed on the semiconductor wafer 12A, the movement of the nozzle 8 from the semiconductor wafer 12B to the main surface 11 a of the circuit board 11 The wire 20 may not be cut by the pressing operation of the nozzle 8 due to the obstruction of the stitch line 21A formed on the semiconductor wafer 12A in the middle. On the other hand, according to the manufacturing method of the semiconductor device 10 and the wire bonding apparatus 1 of the present embodiment, the wire 20 can be cut only by the movement of the nozzle 8 in the air without performing such a pressing operation. In the case where it is difficult to cut the wire 20 by the pressing operation, the stitch lines can also be easily formed on the semiconductor wafer 12A, the semiconductor wafer 12B, the semiconductor wafer 12C, and the semiconductor wafer 12D, respectively. twenty one.

As mentioned above, although embodiment of this invention was described, it is not limited to the said embodiment, It can implement in various forms.

8: Porcelain mouth

8a: Front face

12A, 12B: Semiconductor wafers

12a, 12b: exposed face

20a: bonding part

20b, 20d: Line section

20c: Bending part

31A, 31B: Electrodes

CL: central axis

D1: normal direction

D2: Parallel axis direction

D3, D4: Axial

d1~d4: moving distance

L1, L2: length

P1: The first target point

P2: Second target point

P3: The third target point (the first position)

P4: Fourth target point (second position)

R: radius

S14, S15: Steps

θ1~θ5: Angle

Claims (8)

A method of manufacturing a semiconductor device, comprising: a first step, after using a ceramic nozzle to bond a wire to an electrode, and moving the ceramic nozzle to a first position while extending the wire, thereby pulling the wire out of a predetermined position The length of , the first position is a position higher than the joint part of the wire, and is a position deviated from the normal line of the surface of the electrode passing through the joint part; the second step is to make the After the mouthpiece is moved to the first position, the mouthpiece is moved to a second position while extending the line, thereby forming a folded portion on the line, and the second position is higher than the line The first position is further upward, and is a position deviated from the first position to the joint portion side when viewed from the normal line extending from the normal line; the third step is to form the folded portion Then, the descending and ascending of the porcelain mouth along the normal line direction are repeated for many times, thereby processing the bent portion into a part to be cut; and the fourth step is to make the mouth of the porcelain mouth After the descending and ascending are repeated several times, in order to form a stitch thread, the nozzle is raised in a state where the thread clamp is closed, thereby cutting the thread at the planned cutting portion. The method of manufacturing a semiconductor device according to claim 1, wherein when the nozzle is moved to the second position, the bent portion is located at a position deviated from the normal line passing through the joint portion . The method for manufacturing a semiconductor device according to claim 1 or claim 2, wherein, when viewed from the normal direction, from the first position to the The moving distance of the mouthpiece up to the second position is longer than the radius of the front end surface of the mouthpiece. The method for manufacturing a semiconductor device according to claim 1 or claim 2, wherein when viewed from the normal direction, the nozzle moves from the first position to the second position The distance is the same as the moving distance of the mouthpiece from the joint portion to the first position. The method for manufacturing a semiconductor device according to claim 1 or claim 2, wherein when the nozzle is moved to the second position, a front end surface of the nozzle is positioned directly above the joint portion. The method for manufacturing a semiconductor device according to claim 1 or claim 2, wherein a plurality of semiconductor wafers are layered in stages on a substrate such that the principal surfaces of the semiconductor wafers are exposed as exposed surfaces, and the electrodes provided on the exposed surface of each of the semiconductor wafers, by performing a series of steps from the first step to the fourth step for each of the semiconductor wafers, thereby forming the semiconductor wafer for each of the semiconductor wafers. stitch line. The method for manufacturing a semiconductor device according to claim 6, wherein the semiconductor wafers are produced in the order from the semiconductor wafer in the upper stage to the semiconductor wafer in the lower stage, or in the order from the semiconductor wafer in the lower stage to the semiconductor wafer in the upper stage. A series of steps from the first step to the fourth step are performed. A wire bonding device, comprising: a bonding unit, including a porcelain that is relatively movable with respect to an electrode a nozzle; and a control unit for controlling the operation of the bonding unit, the control unit provides the following control signal to the bonding unit: a first control signal, after using the porcelain nozzle to bond the wire to the electrode, While extending the wire, the mouthpiece is moved to a first position, whereby the wire is pulled out by a predetermined length, and the first position is a position higher than the joint portion of the wire, and is a position deviated from the normal line of the surface of the electrode passing through the joint part; the second control signal, after moving the ceramic nozzle to the first position, extends the line while making the The mouthpiece is moved to a second position, thereby forming a bent portion on the line. The second position is a position higher than the first position and is a normal line extending from the normal line. A position deviated from the first position to the joint side when viewed from the first position; a third control signal, after forming the folded portion, causes the mouthpiece to descend and ascend along the normal direction repeating the process for many times, whereby the bending part is processed into a predetermined part to be cut; and the fourth control signal, after repeating the descending and ascending of the porcelain nozzle many times, in order to form the stitch line, in the state of closing the line clip The nipple is moved downward, thereby cutting the wire at the planned cutting portion.

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