TW202245564A - Semiconductor device manufacturing method and wire bonding device capable of forming a pin wire with a required height - Google Patents

Abstract

The disclosure describes a semiconductor device manufacturing method and a wire bonding device, which can easily form a pin wire with a required height. A semiconductor device 10 manufacturing method comprises: a first step for forming a wire part 20b by moving a capillary 8 to a third target point P3 while feeding a wire 20 after the wire 20 has been joined to an electrode 31 by using the capillary 8; a second step for forming a bent part 20c by moving the capillary 8 to a fourth target point P4 while feeding the wire 20; a third step for processing the bent part 20c into a to-be-cut part C by repeating the descent and rise of the capillary 8 multiple times; and a fourth step for cutting the wire 20 at the to-be-cut part C by raising the capillary 8 in a state in which a wire clamper 9 is closed in order to form a pin wire 21.

Description

Semiconductor device manufacturing method and wire bonding device

The disclosure relates to a manufacturing method of a semiconductor device and a wire-bonding device.

When manufacturing a semiconductor device, for example, in order to vertically connect semiconductor components by bonding, pin wires extending in a rising direction from the electrode surface are sometimes formed on the electrode surface of the semiconductor component. Such a seam can be formed by the method described in Patent Document 1, for example. In this method, after the wire is bonded to the surface of the electrode using a capillary, the capillary is moved, and a damaged portion is formed on the wire using the inner edge of the capillary. Then, after the portion of the wire from the junction to the damaged portion was set upright from the electrode surface, the nozzle was lowered, whereby the wire was bent by the damaged portion. Then, the porcelain nozzle is raised with the wire clamp closed to cut the wire at the damaged part. Thereby, stitch lines standing up from the electrode surface are formed. [Prior Art Literature] [Patent Document]

[Patent Document 1] Japanese Patent Laid-Open No. 2007-220699

[Problem to be Solved by the Invention] With respect to the above stitch line, it is required to further increase the height of the stitch line from the electrode surface. When forming a high stitch line by the method described in patent document 1, it is necessary to extend the line part from a joint part to a damaged part. However, in this method, when the wire is bent by the damaged portion, the nozzle is lowered in a state where the wire is erected from the surface of the electrode, so a large force may be applied to the wire according to the lowering of the nozzle. axis. Therefore, if the wire portion is extended, problems such as buckling of the wire portion are likely to occur due to the force. In this case, a portion that is more easily cut than the damaged portion occurs, so it is difficult to reliably cut the thread at the damaged portion. Therefore, the method is difficult to form a seam of a desired height.

The disclosure describes a method of manufacturing a semiconductor device and a wire bonding device, which can easily form a stitch line of a desired height. [Means to solve the problem]

The manufacturing method of a semiconductor device as an aspect of the present disclosure includes: a first step, after using a ceramic nozzle to bond a wire to an electrode, move the ceramic nozzle to the first position while extending the wire, thereby pulling the wire out of a predetermined position. The length of the length, the first position is a position above the junction of the wire, and is a position deviated from the normal of the surface of the electrode passing through the junction; the second step is to move the porcelain nozzle to the first After the first position, move the ceramic nozzle to the second position while extending the line, thereby forming a bending part on the line. The second position is a position higher than the first position, and is a method extending from the normal line. Viewed along the line direction, it is a position that deviates from the first position to the side of the joint; the third step, after forming the bent part, repeats the lowering and rising of the porcelain nozzle along the normal direction several times, whereby the bent part It is processed into a part to be cut off; and the fourth step is to make the lowering and rising of the porcelain mouth repeatedly, in order to form a stitch line, the porcelain mouth is raised in the state of opening the thread clamp, thereby placing the thread at the predetermined cutting position. cut off.

According to the above manufacturing method, the thread can be reliably cut at the portion to be cut, so that a stitch line of a desired height can be easily formed.

When the porcelain nozzle is moved to the second position, the bent portion may also be located at a position deviated from the normal line passing through the joining portion. In this case, it is possible to more reliably suppress occurrence of a problem such as buckling at the portion to be formed with stitches, and it is possible to more reliably cut the thread at the portion to be cut.

When viewed from the normal direction, the moving distance of the ceramic nozzle from the first position to the second position can also be longer than the radius of the front end surface of the ceramic nozzle. In this case, the wire can be more reliably cut at the cut-planning portion.

When viewed from the normal direction, the movement distance of the ceramic nozzle from the first position to the second position may be the same as the movement distance of the ceramic nozzle from the joining portion to the first position. In this case, the wire can be cut more reliably at the part to be cut.

When the porcelain nozzle is moved to the second position, the front end surface of the porcelain nozzle can also be located directly above the joining portion. In this case, it is possible to easily obtain the stitch line in a state standing upright from the surface of the electrode.

On the substrate, a plurality of semiconductor chips are stacked in stages with the main surface of each semiconductor chip as the exposed surface, and electrodes are provided on the exposed surface of each semiconductor chip. It is also possible to perform the first step for each semiconductor chip A series of steps up to the fourth step to form stitch lines for each semiconductor wafer. A series of steps from the first step to the fourth step may also be performed in the order from the upper semiconductor wafer to the lower semiconductor wafer, or in the order from the lower semiconductor wafer to the upper semiconductor wafer. In this case, even in a situation where it is difficult to cut the wire by the pressing action, the stitch line can be easily formed for each semiconductor wafer.

As another form of the present disclosure, a wire bonding device includes: a bonding unit including a ceramic tip that can move relative to an electrode; and a control unit that controls the operation of the bonding unit, and the control unit provides the following control signal to the bonding unit : The first control signal, after using the ceramic nozzle to bond the wire to the electrode, move the ceramic nozzle to the first position while extending the wire, thereby pulling the wire out to a predetermined length. The first position is the comparison of the wire The joint part of the joint part is more upward, and it is a position deviated from the normal line of the surface of the electrode passing through the joint part; the second control signal, after moving the ceramic nozzle to the first position, makes the ceramic nozzle move while extending the wire. The mouth is moved to a second position, which is a position higher than the first position and is viewed from the normal direction extending from the normal line relative to the first position, thereby forming a bend in the line. The position of the joint part side deviation; the third control signal, after forming the bent part, the lowering and rising of the porcelain nozzle along the normal direction is repeated several times, thereby processing the bent part into a part to be cut; and the second Four control signals, after repeatedly lowering and rising the porcelain mouth, in order to form a stitch line, the porcelain mouth is raised in the state of closing the thread clamp, thereby cutting the thread at the cut-off predetermined part.

According to the above-mentioned wire bonding apparatus, the thread can be reliably cut at the portion to be cut, so that a stitch line of a desired height can be easily formed. [Effect of the invention]

According to the present disclosure, there are provided a method of manufacturing a semiconductor device and a wire bonding apparatus capable of easily forming stitch lines of a desired height.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the description of the drawings, the same symbols are assigned to the same elements, and overlapping descriptions are appropriately omitted.

[Wire bonding device] In the wire bonding apparatus 1 shown in FIG. 1 , for example, after bonding the wire 20 to an electrode provided on the semiconductor device 10, the wire 20 is cut to a predetermined length, thereby forming a wire 20 extending from the surface of the electrode in a vertical direction. Pin line 21 (refer to Figure 3). The wire bonding apparatus 1 includes, for example, a transport unit 2 , a bonding unit 3 , and a control unit 4 .

The transfer unit 2 transfers the semiconductor device 10 as a part to be processed to the bonding area. The bonding unit 3 includes, for example, a moving mechanism 6 , a bonding tool 7 , a ceramic nozzle 8 and a wire clip 9 . The moving mechanism 6 relatively moves the ceramic nozzle 8 relative to the semiconductor device 10 . At the front end of the bonding tool 7, a nipple 8 from which a wire 20 protrudes is detachably provided. The porcelain mouth 8 is a sharp cylinder. Wires 20 are inserted inside the porcelain nozzle 8 . Porcelain nozzle 8 provides heat, ultrasound or pressure to wire 20 .

The wire clip 9 is arranged above the porcelain mouth 8 . The wire clip 9 is configured to be able to hold the wire 20 . When the wire clamp 9 is opened, the wire 20 is not held by the wire clamp 9 , allowing the wire 20 to protrude from the porcelain mouth 8 . When the wire clamp 9 is closed, the wire 20 is held by the wire clamp 9, and the wire 20 stops protruding from the porcelain mouth 8. The wire 20 is a thin metal wire. For example, the wire 20 is formed of gold (Au), silver (Ag), aluminum (Al), copper (Cu), or an alloy thereof. The diameter of the wire 20 is, for example, 20 μm (micrometer).

The control unit 4 controls the overall operation of the wire bonding apparatus 1 including the operation of the bonding unit 3 . The control unit 4 provides several control signals to the joint unit 3 . For example, the control signal includes: a signal used to control the position of the ceramic nozzle 8 relative to the semiconductor device 10; a signal used to start and stop providing heat, ultrasonic waves or pressure; and a signal used to allow and stop extending the wire from the ceramic nozzle 8 20 signals. The specific control operation of the control unit 4 will be described later.

[semiconductor device] The semiconductor device 10 shown in FIG. 2 includes, for example, a circuit board 11 ; a semiconductor component 12 including a plurality of semiconductor chips 12A, 12B, 12C, and 12D; and a plurality of pin lines 21A, 21B, 21C, and 21D. The semiconductor component 12 is fixed to the main surface 11 a of the circuit board 11 by, for example, die bonding. The semiconductor component 12 has, for example, a configuration in which a plurality of semiconductor wafers 12A, 12B, 12C, and 12D are stacked in multiple stages. As an example, the semiconductor component 12 is a multi-segment chip memory device.

The respective semiconductor wafers 12A, 12B, 12C, and 12D are stacked so as to deviate in steps. The semiconductor chip 12A is arranged on the main surface 11 a of the circuit board 11 . The semiconductor wafer 12B is arranged on the main surface of the semiconductor wafer 12A, and is arranged to deviate from the semiconductor wafer 12A along a direction along the main surface 11 a of the circuit board 11 . The semiconductor wafer 12C is arranged on the main surface of the semiconductor wafer 12B, and is arranged to deviate from the semiconductor wafer 12B along the one direction. The semiconductor wafer 12D is arranged on the main surface of the semiconductor wafer 12C, and is arranged to deviate from the semiconductor wafer 12C along the one direction.

A part of the main surface of the semiconductor wafer 12A exposed from the semiconductor wafer 12B is an exposed surface 12 a exposed from the semiconductor wafer 12B. A part of the main surface of the semiconductor wafer 12B exposed from the semiconductor wafer 12C is an exposed surface 12b exposed from the semiconductor wafer 12C. A part of the main surface of the semiconductor wafer 12C exposed from the semiconductor wafer 12D is an exposed surface 12c exposed from the semiconductor wafer 12D. The main surface of the semiconductor wafer 12D is an exposed surface 12 d exposed outside the semiconductor component 12 . Electrode 31A, electrode 31B, electrode 31C, and electrode 31D are provided on exposed surface 12a, exposed surface 12b, exposed surface 12c, and exposed surface 12d, respectively. The surface of the electrode 31A constitutes the exposed surface 12a, the surface of the electrode 31B constitutes the exposed surface 12b, the surface of the electrode 31C constitutes the exposed surface 12c, and the surface of the electrode 31D constitutes the exposed surface 12d.

The stitching thread 21A, the stitching thread 21B, the stitching thread 21C, and the stitching thread 21D are respectively provided on the electrode 31A, the electrode 31B, the electrode 31C, and the electrode 31D. Each of the seams 21A, 21B, 21C, and 21D is a part of the thread 20 cut at a predetermined length. The stitching wire 21A is bonded to the surface of the electrode 31A, and extends in a rising direction from the surface of the electrode 31A. The stitching wire 21B is bonded to the surface of the electrode 31B, and extends in a rising direction from the surface of the electrode 31B. The stitch wire 21C is bonded to the surface of the electrode 31C, and extends in a direction to rise from the surface of the electrode 31C. The stitching wire 21D is bonded to the surface of the electrode 31D, and extends in a rising direction from the surface of the electrode 31D.

The upper ends of the respective stitching lines 21A, 21B, 21C, and 21D are aligned so as to be located at the same height H with respect to the main surface 11 a of the circuit board 11 . Therefore, the lengths of the seams 21A, 21B, 21C, and 21D are different from each other. The length of the stitch line 21A of the semiconductor chip 12A arranged on the lowermost section is the longest, and the length of the stitch line 21B of the semiconductor chip 12B arranged at the next section is shorter than the length of the stitch line 21A. The length of the stitch line 21C of 12C is shorter than the length of the stitch line 21B, and the length of the stitch line 21D of the uppermost semiconductor wafer 12D is the shortest. The upper ends of the pins 21A, 21B, 21C, and 21D are connected to electrodes of other semiconductor components (not shown) provided on the semiconductor component 12 . Thereby, the semiconductor component 12 and the other semiconductor component are electrically connected to each other via the stitch wire 21A, the stitch wire 21B, the stitch wire 21C, and the stitch wire 21D.

Hereinafter, when it is not necessary to distinguish and explain the stitching thread 21A, the stitching thread 21B, the stitching thread 21C, and the stitching thread 21D, these are collectively referred to as "the stitching thread 21", and it is not necessary to distinguish the electrodes 31A, 31B, and 31C. In the case where the electrodes 31D and 31D are separately described, these are collectively referred to as "electrodes 31".

FIG. 3 shows the shape of the seam 21 . As shown in FIG. 3 , the stitching thread 21 includes a joining portion 21 a and a thread portion 21 b. The junction part 21a is a part which comprises the lower end part of the stitching thread 21, and corresponds to the junction part 20a (joint part) of the thread 20 mentioned later. The bonding portion 21 a is physically and electrically connected to the electrode 31 . The so-called state of physical connection mentioned here refers to the state where the pointer leg 21 and the electrode 31 are joined to each other. For example, the junction part 21a may be set as the part which generate|occur|produces resistance (reaction force) to a stretching force. In addition, the so-called electrically connected state is a state in which the resistance between the finger leg 21 and the electrode 31 is extremely small. The joining portion 21 a is formed by pressing a spherical free air ball (FAB) formed at the tip of the wire 20 against the electrode 31 by the ceramic nozzle 8 . Therefore, the joint part 21a has a deformed hemispherical shape in which the FAB is crushed by half.

The thread part 21b is the body part of the stitching thread 21, and corresponds to the thread part 20b of the thread 20 mentioned later. The line portion 21b extends upward from the junction portion 21a. In the present embodiment, the line portion 21b extends along the normal direction D1 in which the normal to the surface of the electrode 31 extends. In other words, the line portion 21b is in a state of standing upright with respect to the surface of the electrode 31 . The wire portion 21b has a circular cross-section, and maintains the cross-sectional shape of the wire 20 . The upper end portion 21c of the wire portion 21b has a shape tapered toward the upper end of the wire portion 21b. The upper end portion 21c is a cutting portion of the thread 20 when forming the seam 21, and corresponds to a bending portion 20c of the thread 20 described later. The height from the surface of the electrode 31 to the upper end of the stitch line 21 , that is, the entire length of the stitch line 21 may be, for example, 100 μm or more.

[Manufacturing method of semiconductor device] The semiconductor device 10 is manufactured by a wire bonding device 1 . Hereinafter, the control operation of the control unit 4 in the wire bonding apparatus 1 and the manufacturing method of the semiconductor device 10 will be described.

First, referring to FIG. 3 on the one hand, the first target point P1 to the seventh target point P7 of the movement of the front end of the porcelain nozzle 8 will be specifically described on the one hand. FIG. 3 shows the shape of the stitch line 21 and shows the first target point P1 to the seventh target point P7. The control unit 4 has information related to the preset first target point P1 to seventh target point P7. The control unit 4 provides control signals to the bonding unit 3 in such a way that the front end of the porcelain nozzle 8 moves to the first target point P1 to the seventh target point P7 in sequence. Furthermore, the control unit 4 supplies the joint unit 3 with a control signal for allowing and stopping the extension of the wire 20 during the movement. Furthermore, the control unit 4 supplies the joining unit 3 with a control signal for controlling permission and stop of supply of ultrasonic waves and the like from the ceramic nozzle 8 . In addition, the front-end|tip of the porcelain nozzle 8 shows the position of the front-end surface 8a (refer FIG. 8) of the porcelain nozzle 8. As shown in FIG. The front end surface 8a is, for example, a plane parallel to the surface of the electrode 31, and has a circular shape when viewed from the normal direction D1. Therefore, the front end of the porcelain nozzle 8 can be set at the center position of the front end surface 8a when viewed from the normal direction D1, for example.

In addition, in the following description, the case where the semiconductor component 12 is fixed and the nozzle 8 is moved is illustrated as an example. However, the loci drawn by the first target point P1 to the seventh target point P7 may be drawn based on the relative positional relationship between the semiconductor component 12 and the nozzle 8 . That is, as described below, only the nozzle 8 can be moved to draw the locus. In addition, it is also possible to draw the track by moving both the semiconductor component 12 and the nozzle 8 . For example, the movement in the vertical direction can also be handled by the movement of the ceramic nozzle 8 , and the movement in the left and right direction can also be handled by the movement of the semiconductor component 12 .

The first target point P1 represents the position where the wire 20 is bonded to the electrode 31 . In other words, the first target point P1 indicates the position where the joint portion 21a of the seam 21 is formed, that is, the position of the joint portion 21a. The first target point P1 may also be set as the position of the center of the bonding portion 21 a on the surface of the electrode 31 and viewed from the normal direction D1 .

The second target point P2 is a position directly above the first target point P1. In other words, the second target point P2 is a position on the normal line to the surface of the electrode 31 passing through the first target point P1. In the following description, the direction away from the electrode 31 along the normal to the surface of the electrode 31 is called "upward direction", and the direction close to the electrode 31 along the normal is called "downward direction". In this way, the second target point P2 can also be referred to as a position deviated from the first target point P1 in an upward direction.

The third target point P3 (first position) is a position deviated from the normal line of the electrode 31 passing through the first target point P1 and the second target point P2 . That is, the third target point P3 is set at a position along a direction extending along a parallel axis perpendicular to the normal of the electrode 31 (hereinafter referred to as "parallel axis direction D2") relative to the second target point P2. away from a given distance. In the following description, the direction from the electrode 31A toward the electrode 31B along the parallel axis direction D2 is called "right direction", and the direction along the parallel axis direction D2 from the electrode 31B toward the electrode 31A is called "left direction". Therefore, the third target point P3 can also be referred to as a position away from the second target point P2 by a predetermined distance in the left direction. The distance from the first target point P1 to the second target point P2 and the distance from the second target point P2 to the third target point P3 can also be based on the height of the stitch line 21 from the surface of the electrode 31 (the height of the stitch line 21 full length) to decide. The distance from the second target point P2 to the third target point P3 can be the same as the distance from the first target point P1 to the second target point P2, or can be longer or shorter.

The fourth target point P4 (second position) is above the third target point P3 and deviates from the third target point P3 toward the first target point P1 when viewed from the normal direction D1 . That is, the fourth target point P4 is set at a position deviated upward from the third target point P3 along the normal direction D1 and deviated from the third target point P3 to the first target point P1 side along the parallel axis direction D2. . The fourth target point P4 can also be said to be set at a position away from the third target point P3 by a predetermined distance in the upward direction and the rightward direction, respectively. In this embodiment, the fourth target point P4 is set at a position directly above the first target point P1 and the second target point P2. In other words, the fourth target point P4 is set at a position on the normal line of the electrode 31 passing through the first target point P1 and the second target point P2 . Therefore, the first target point P1, the second target point P2, and the fourth target point P4 are set on the same line. The position of the fourth target point P4 does not need to be directly above the first target point P1 and the second target point P2, and can also be set at a position deviated from the normal line of the electrode 31 passing through the first target point P1 and the second target point P2. Location. For example, when the position of the fourth target point P4 is viewed from the normal direction D1, it may be a position between the third target point P3 and the first target point P1 and the second target point P2, or it may be a position relative to the first target point P2. The three target points P3 are farther away from the first target point P1 and the second target point P2.

The fifth target point P5 is a position deviated in the downward direction from the fourth target point P4. Therefore, the fifth target point P5 is set on the same line as the first target point P1 , the second target point P2 , and the fourth target point P4 in the normal direction. In the present embodiment, the fifth target point P5 is set at a position higher than the second target point P2. Specifically, the fifth target point P5 is set at a position between the second target point P2 and the fourth target point P4 in the normal direction D1. The fifth target point P5 can also be set at a lower position than the second target point P2. For example, the fifth target point P5 can also be set at a position between the first target point P1 and the second target point P2 in the normal direction D1.

The sixth target point P6 is a position deviated from the fourth target point P4 in the upward direction. The seventh target point P7 is a position deviated from the sixth target point P6 in the upward direction. Therefore, in the normal direction, the first target point P1 , the second target point P2 , the fourth target point P4 , the fifth target point P5 , the sixth target point P6 and the seventh target point P7 are set on the same line. When the porcelain nozzle 8 moves to the seventh target point P7, the thread 20 is cut, thereby forming the seam line 21 .

Then, referring to FIG. 4 , FIG. 5(a) to FIG. 5(c), FIG. 6(a) to FIG. 6(c) and FIG. 7(a) to FIG. 7(c), On the one hand, the control operation of the control unit 4 and the manufacturing method of the semiconductor device 10 will be described. Hereinafter, the case where the stitch line 21A, the stitch line 21B, the stitch line 21C, and the stitch line 21D are sequentially formed from the lowermost semiconductor wafer 12A to the uppermost semiconductor wafer 12D will be described. However, the steps for forming the stitch lines 21A, 21B, 21C, and 21D are the same, so the example in which the stitch lines 21A are formed on the electrode 31A of the semiconductor wafer 12A will be described as a representative example.

＜Step 1＞ The control unit 4 provides a first control signal to the bonding unit 3 . The first control signal includes the action of moving the porcelain mouth 8 to the first target point P1 (step S11), the action of moving the porcelain mouth 8 to the second target point P2 (step S12), and the movement of the porcelain mouth 8 to the third target The operation at point P3 (step S13 ), the operation of radiating ultrasonic waves from the mouthpiece 8 for a predetermined period, and the operation of allowing the wire 20 to protrude from the mouthpiece 8 .

After receiving the first control signal, the bonding unit 3 forms a spherical FAB (see (c) of FIG. 7 ) at the front end of the wire 20 protruding from the ceramic nozzle 8, and then moves the ceramic nozzle 8 to the first target point P1 ( Refer to step S11 , (a) of FIG. 5 ). At this time, the porcelain mouth 8 presses the wire 20 against the electrode 31 . Then, the bonding unit 3 radiates ultrasonic waves from the ceramic nozzle 8 for a predetermined period. Thereby, the FAB of the wire 20 is deformed and bonded to the electrode 31A to form the bonding portion 20a.

Next, the bonding unit 3 moves the porcelain nozzle 8 from the first target point P1 to the second target point P2 (see step S12 , FIG. 5( b )). Furthermore, the joint unit 3 allows the wire 20 to protrude from the ceramic nozzle 8 by setting the wire clamp 9 in a state of being opened. That is, the bonding unit 3 moves the nozzle 8 from the first target point P1 to the second target point P2 while extending the wire 20 .

Next, the bonding unit 3 moves the nozzle 8 from the second target point P2 to the third target point P3 while drawing out the wire 20 (see step S13 , FIG. 5( c )). At this time, the wire 20 is pulled out by a predetermined length to form a wire portion 20b extending from the joining portion 20a to the spout 8 . The thread part 20b corresponds to the thread part 21b which is the main body part of the stitching thread 21 as mentioned above. Therefore, the thread part 20b can also be said to form the predetermined seam formation part which forms the seam 21. As shown in FIG.

In step S12 and step S13, as long as the porcelain nozzle 8 can be moved from the first target point P1 to the third target point P3. For example, instead of step S12 and step S13, the step of directly moving from the first target point P1 to the third target point P3 may be performed. In other words, the porcelain nozzle 8 may not pass through the second target point P2. For example, the ceramic nozzle 8 can be moved along a straight line connecting the first target point P1 and the third target point P3, or the ceramic nozzle 8 can be moved along an arc passing through the first target point P1 and the third target point P3. track movement.

＜Step 2＞ The control unit 4 provides the second control signal to the bonding unit 3 . The second control signal includes an action of moving the ceramic mouthpiece 8 to the fourth target point P4 and an action of allowing the wire 20 to protrude from the porcelain mouthpiece 8 (step S14 ).

The joining unit 3 that has received the second control signal moves the nozzle 8 from the third target point P3 to the fourth target point P4 while extending the wire 20 (see step S14 , FIG. 6( a )). At this time, the bent part 20c is formed above the line part 20b, and the line part 20d is formed above the bent part 20c (step S15). The bending part 20c is located between the line part 20b and the line part 20d, so that the axial direction (extension direction) of the line part 20d extending from the bending part 20c to the porcelain nozzle 8 is determined by the line extending from the joint part 20a to the bending part 20c The axial direction (extending direction) of the part 20b changes. The bent portion 20c is formed by increasing the degree of bending of the wire 20 . That is, as the degree of bending of the bending portion 20c increases, the deformation of the bending portion 20c changes from elastic deformation to plastic deformation. Furthermore, when the bending part 20c is plastically deformed, the bending part 20c does not return to the original shape (linear shape), but maintains the bent shape (arc shape).

In step S14 and step S15, corresponding to the movement of the porcelain nozzle 8 from the third target point P3 to the fourth target point P4, the bending part 20c does not stay at the third target point P3, but moves from the third target point P3 Move slightly toward the fourth target point P4 side. The moved bent portion 20c is not located on the normal line of the electrode 31 passing through the junction portion 20a. That is, the bent portion 20c is located at a position deviated from the normal line passing through the joining portion 20a. Therefore, the axial direction of the line portion 20b extending from the joining portion 20a to the bending portion 20c and the axial direction of the line portion 20d extending from the bending portion 20c to the spout 8 are inclined from the normal direction D1 respectively. More specific shapes of the wire 20 in step S14 and step S15 will be described later.

In step S14, the ceramic nozzle 8 can be moved along the straight line connecting the third target point P3 and the fourth target point P4, or the ceramic nozzle 8 can be moved along the path passing through the third target point P3 and the fourth target point P4. Arc trajectory movement. In addition, in step S14, the ceramic nozzle 8 may not be directly moved from the third target point P3 to the fourth target point P4. That is, the ceramic nozzle 8 can also be moved from the third target point P3 to the fourth target point P4 after passing through other target points. For example, after moving the ceramic nozzle 8 to the right from the third target point P3 to other target points, the ceramic nozzle 8 can be moved upward from the other target point to the fourth target point P4.

＜Step 3＞ The control unit 4 provides the third control signal to the bonding unit 3 . The third control signal includes stopping the action of extending the line 20 from the porcelain mouth 8, moving the porcelain mouth 8 to the fifth target point P5 (step S15), and making the porcelain mouth 8 at the fifth target point P5 and the sixth target The action of moving back and forth between the points P6 (step S16).

The joining unit 3 that has received the third control signal stops extending the wire 20 from the ceramic nozzle 8 by setting the wire clamp 9 to the closed state. Furthermore, the joining unit 3 lowers the porcelain nozzle 8 from the 4th target point P4 to the 5th target point P5 (refer step S16, FIG.6(b)). At this time, the line part 20b and the line part 20d are bent mutually starting from the bending part 20c. In other words, the angle between the line portion 20b and the line portion 20d becomes smaller, and the degree of bending of the bending portion 20c becomes larger. Furthermore, a tensile force acts on the outer side (left side) of the bent portion 20c, while a compressive force acts on the inner side (right side) of the bent portion 20c. As a result, a part of the bent part 20c is deformed so as to be crushed in a direction perpendicular to the axial direction of the bent part 20c, and this part becomes thinner than other parts of the bent part 20c. That is, the mechanical strength of the bent portion 20c is lower than that of other portions of the wire 20 .

Then, the bonding unit 3 moves the porcelain mouth 8 back and forth between the fourth target point P4 and the fifth target point P5 in the state where the wire 20 is stopped from the porcelain mouth 8 (refer to step S17, (c) of FIG. 6 ). That is, the porcelain nozzle 8 repeatedly performs movement from the fifth target point P5 to the fourth target point P4 and movement from the fourth target point P4 to the fifth target point P5. In this way, in step S16 and step S17, the lowering of the ceramic nozzle 8 from the fourth target point P4 to the fifth target point P5 and the rising of the ceramic nozzle 8 from the fifth target point P5 to the fourth target point P4 are repeated several times. . The bending operation of the line portion 20b and the line portion 20d starting from the bending portion 20c is performed multiple times by the repeated movement of the lowering and rising of the porcelain nozzle 8 . Repeated stress acts on the bent portion 20c by this bending operation.

Repeated stress fatigues the bent portion 20c. This fatigue further reduces the mechanical strength of the bent portion 20c. As a result, the mechanical strength of the bent portion 20c is lower than the mechanical strength of the connection portion of the junction portion 20a with the line portion 20b. That is, the bent portion 20c is processed into the portion to be cut C whose mechanical strength is lower than that of the joining portion 20a. The part C to be cut is a part where the thread 20 is planned to be cut in step S19 and step S20 (see FIG. 7( b )) to be described later. In steps S16 and S17, the repeated operation of lowering and raising the nozzle 8 is repeated several times until the mechanical strength of the part C to be cut becomes lower than that of the joint part 20a.

The mechanical strength of the connection portion of the junction portion 20 a with the wire portion 20 b tends to be lower than that of other portions of the wire 20 . As described above, the joint portion 20 a is formed by pressing the FAB formed at the tip of the wire 20 against the electrode 31A by the ceramic nozzle 8 . Here, since the size of the metal crystals in the FAB changes when the FAB is joined to the electrode 31A, the size of the metal crystals differs between the FAB and the portion of the wire 20 other than the FAB. The mechanical strength tends to decrease at the boundary portion of the line 20 that becomes the boundary between the size changes of the metal crystals. This boundary part corresponds to the connection part of the junction part 20a and the line part 20b. Therefore, the mechanical strength of this connecting portion is easily lowered compared with other portions of the wire 20 . Therefore, if the wire 20 is simply pulled upward without reducing the mechanical strength of other portions of the wire 20 than the connection portion, the wire 20 is easily cut at the connection portion. Therefore, by making the mechanical strength of the portion to be cut C lower than that of the connecting portion of the joining portion 20a, the wire 20 is not cut at the connecting portion, but the wire 20 is cut at the portion C to be cut. Cut off reliably.

In the present embodiment, the porcelain nozzle 8 is moved back and forth between the fourth target point P4 and the fifth target point P5, so the moving distance of the porcelain nozzle 8 from the fourth target point P4 to the fifth target point P5 is different from that from the fourth target point P4 to the fifth target point P5. The moving distances of the porcelain mouth 8 from the fifth target point P5 to the fourth target point P4 are the same as each other. However, these moving distances do not have to be the same as each other, and may be different from each other, and may be changed every time the lowering and raising of the porcelain nozzle 8 are repeated. In the present embodiment, when the lowering and raising of the nozzle 8 are repeated, the clamp 9 is closed. That is, in a state where the extension of the wire 20 from the porcelain nozzle 8 is stopped, the lowering and raising of the porcelain nozzle 8 are repeated. Thereby, repeated stress can be efficiently applied to the bent portion 20c, so that the bent portion 20c can be more reliably processed into the portion to be cut C having a lower mechanical strength than the joining portion 20a.

＜Step 4＞ The control unit 4 provides the fourth control signal to the bonding unit 3 . The fourth control signal includes an action of moving the porcelain nozzle 8 to the sixth target point P6 (step S18 ), and an action of moving the porcelain nozzle 8 to the seventh target point P7 (step S19 ).

The joining unit 3 that has received the fourth control signal moves the porcelain nozzle 8 from the fifth target point P5 to the sixth target point P6 in the state where the wire 20 is stopped from the porcelain nozzle 8 (refer to step S18, Fig. 7 ( a)). At this time, the wire portion 20b, the portion to be cut C, and the wire portion 20b are pulled upward in accordance with the rise of the nozzle 8, and are in a state along the normal direction D1.

Then, the bonding unit 3 moves the nozzle 8 from the sixth target point P6 to the seventh target point P7 while stopping the extension of the wire 20 from the nozzle 8 (see step S19 , FIG. 7( b )). That is, the ascent of the porcelain nozzle 8 is further raised from the state shown in (a) of FIG. 7 . At this time, the wire 20 is stretched in the axial direction (upward direction) in accordance with the rise of the nozzle 8 . Here, the mechanical strength of the portion to be cut C is lower than that of the joining portion 20a. That is, the mechanical strength of the portion to be cut C is in a state of being the most reduced compared with other portions of the wire 20 . Therefore, when the wire 20 is stretched in the axial direction, the wire 20 is cut at the part C where the mechanical strength is the lowest. Thereby, the stitch line 21A is formed on the electrode 31A (step S20 ).

Then, the control unit 4 moves the ceramic nozzle 8 to the eighth target point P8 directly above the electrode 31B of the next semiconductor wafer 12B after forming the FAB at the front end of the wire 20 . Then, a series of steps from step S11 to step S20 are performed again for the electrode 31B, thereby forming the stitch line 21B on the electrode 31B. Then, a series of steps from step S11 to step S20 are performed again for the electrode 31C, thereby forming the stitch line 21C on the electrode 31C. Then, a series of steps from step S11 to step S20 are performed again for the electrode 31D, thereby forming the stitch line 21D on the electrode 31D. Through the above steps, the semiconductor device 10 shown in FIG. 2 can be obtained. The order of forming the seams 21 is not limited to the above examples. For example, stitch line 21D, stitch line 21C, stitch line 21B, and stitch line 21A may be formed sequentially from the uppermost semiconductor chip 12D to the lowermost semiconductor chip 12A, or stitch line 21 may be formed in any order.

Here, referring to FIG. 8 , the shape of the line 20 in step S14 and step S15 will be described in detail. In the state where the nozzle 8 is located at the fourth target point P4, the wire 20 includes a joint portion 20a, a wire portion 20b, a bending portion 20c, and a wire portion 20d.

The wire part 20b is a part of the wire 20 extending continuously from the joint part 20a to the bending part 20c. The axial direction D3 of the line portion 20b is inclined relative to the normal direction D1 and the parallel axis direction D2. That is, the axial direction D3 of the wire portion 20b includes a component in the normal direction D1 and a component in the parallel axis direction D2. The angle θ1 formed by the axial direction D3 of the line portion 20 b and the normal direction D1 is within a range of greater than 0° and less than 90°. In other words, the angle θ1 is an acute angle. The angle θ1 can be set within a range of, for example, 15° to 65°, preferably 25° to 40°. The angle θ2 formed by the axial direction D3 of the wire portion 20 b and the parallel axis direction D2 is also within a range greater than 0° and less than 90°. The angle θ2 can be set, for example, within a range of 25° to 75°, preferably within a range of 25° to 40°. The angle θ2 may be different from the angle θ1, or may be the same as the angle θ1.

The line portion 20d is a portion of the line 20 extending continuously from the bent portion 20c to the spout 8 . The axial direction D4 of the line portion 20d is inclined relative to the normal direction D1 and the parallel axis direction D2. That is, the axial direction D4 of the wire portion 20d includes a component in the normal direction D1 and a component in the parallel axis direction D2. The angle θ3 formed by the axial direction D4 of the line portion 20d and the normal direction D1 is within a range of greater than 0° and less than 90°. The angle θ3 can be set within a range of, for example, 15° to 65°, preferably 25° to 40°. The angle θ4 formed by the axial direction D4 of the line portion 20d and the parallel axis direction D2 is also within a range greater than 0° and less than 90°. The angle θ4 can be set, for example, within a range of 25° to 75°, preferably within a range of 25° to 40°. The angle θ4 may be different from the angle θ3, or may be the same as the angle θ3.

The axial direction D4 of the wire portion 20d intersects the axial direction D3 of the wire portion 20b. That is, the axial direction D4 of the wire portion 20d is different from the axial direction D3 of the wire portion 20b. The angle θ5 formed by the axial direction D4 of the wire portion 20d and the axial direction D3 of the wire portion 20b is represented by the sum of the angle θ2 and the angle θ4. The angle θ5 is within the range of greater than 0° and less than 180°. The angle θ5 can be set within a range of, for example, 50° to 150°, preferably 50° to 80°.

In this embodiment, the angle θ1 is the same as the angle θ3, and the angle θ2 is the same as the angle θ4. That is, the shape of the wire portion 20d is symmetrical to the shape of the wire portion 20b with respect to a parallel axis passing through the center of the bent portion 20c. Therefore, the length of the axial direction D3 of the wire part 20b is the same as the length of the axial direction D4 of the wire part 20d. In this case, the length L1 from the parallel axis passing through the vertical center of the bent portion 20 c to the surface of the electrode 31A is the same as the length L2 from the parallel axis to the front end surface 8 a of the nozzle 8 . That is, the ratio (L1/L2) of the length L1 to the length L2 becomes 1 (that is, L1:L2=1:1). As an example, the length L1 and the length L2 are each 300 μm. The length L1 and the length L2 do not have to be the same as each other, and can also be different from each other. The ratio (L1/L2) of the length L1 to the length L2 can be set within the range of 0.5 to 2.0, preferably 0.7 to 1.5. The length L1 and the length L2 may be within a range of, for example, 200 μm or more and 400 μm or more, preferably 250 μm or more and 350 μm or more.

The length of the line portion 20b in the axial direction D3 corresponds to the distance from the first target point P1 to the third target point P3. That is, the length of the axial direction D3 of the line portion 20b is based on the moving distance d1 of the ceramic nozzle 8 along the normal direction D1 from the first target point P1 to the third target point P3, and the distance from the first target point P1 to the third target point P3. The movement distance d2 of the nozzle 8 along the parallel axis direction D2 up to the third target point P3 is determined. The moving distance d1 can also be referred to as the moving distance of the ceramic nozzle 8 from the first target point P1 to the third target point P3 viewed from the parallel axis direction D2. The moving distance d2 can also be referred to as the moving distance of the porcelain nozzle 8 from the first target point P1 to the third target point P3 when viewed from the normal direction D1.

The length of the line portion 20d in the axial direction D4 corresponds to the distance from the third target point P3 to the fourth target point P4. That is, the length of the axial direction D4 of the line portion 20d is based on the moving distance d3 of the ceramic nozzle 8 along the normal direction D1 from the third target point P3 to the fourth target point P4, and the distance from the third target point P3 to the fourth target point P4. The movement distance d4 of the nozzle 8 along the parallel axis direction D2 up to the fourth target point P4 is determined. The moving distance d3 can also be referred to as the moving distance of the ceramic nozzle 8 from the third target point P3 to the fourth target point P4 viewed from the parallel axis direction D2. The moving distance d4 can also be referred to as the moving distance of the porcelain nozzle 8 from the third target point P3 to the fourth target point P4 when viewed from the normal direction D1.

In the present embodiment, the moving distance d2 is the same as the moving distance d4, and the moving distance d2 and the moving distance d4 are respectively longer than the radius R of the front end surface 8a of the ceramic nozzle 8 . The radius R of the front end surface 8a is, for example, 20 μm. In addition, the moving distance d3 is slightly longer than the moving distance d1. As mentioned above, when the porcelain nozzle 8 is moved from the third target point P3 to the fourth target point P4, the bending portion 20c deviates slightly from the third target point P3 to the fourth target point P4 side. The movement distance d3 is set to be longer than the movement distance d1 in consideration of the amount of deviation of the upward bending portion 20c from the third target point P3 at this time. The moving distance d3 may be the same as the moving distance d1, or may be shorter. The moving distance d2 may not be the same as the moving distance d4, and may be longer or shorter than the moving distance d4. The moving distance d2 can also be longer than the moving distance d1. In this case, the angle θ2 can be reduced. That is, the degree of bending of the bending portion 20c can be increased. Thereby, the bending part 20c can be formed easily.

In the state where the ceramic nozzle 8 is located at the fourth target point P4, the front end surface 8a of the ceramic nozzle 8 is located directly above the joining portion 20a. The state where the front end surface 8a is located directly above the joint portion 20a refers to the state in which the entire joint portion 20a is accommodated inside the front end surface 8a when viewed from the normal direction D1, that is, the electrode passing through the joint portion 20a The normal line 31 all passes through the inside of the front end surface 8a. In this embodiment, when viewed from the normal direction D1, the position of the nozzle 8 is set so that the central axis CL of the front end surface 8a passes through the center of the joint portion 20a, but as long as the front end surface 8a is positioned at the joint portion 20a In the directly above state, the central axis CL of the front end surface 8a may deviate from the center of the joining portion 20a.

The above-described manufacturing method of the semiconductor device 10 and the effects of the wire bonding apparatus 1 according to the present embodiment will be described together with the problems of the comparative example.

FIG. 9( a ) and FIG. 9( b ) show the steps of the method of manufacturing the semiconductor device of the first comparative example. This manufacturing method is different from the manufacturing method of the semiconductor device 10 of this embodiment in that the bent portion is not formed in-line. In the manufacturing method of the first comparative example, the wire 120 is first bonded to the electrode 131 of the semiconductor component 112 using the ceramic nozzle 108, thereby forming the bonding portion 120a, and the ceramic nozzle 108 is raised while extending the wire 120, thereby forming a self- The joint part 120a is a line part 120b extending upward (see (a) of FIG. 9 ). Then, the porcelain nozzle 108 is raised while the wire clamp is closed, thereby cutting the wire 120 (see (b) of FIG. 9 ). Here, as described above, the connection portion between the junction portion 120a and the wire portion 120b is a portion where the size of the metal crystal changes, so the mechanical strength of the connection portion is lower than that of other portions of the wire 120 . Therefore, if the porcelain nozzle 108 is easily lifted up in this state, the wire 120 will be cut|disconnected at this connection part as shown in FIG.9(b). Therefore, in the method of manufacturing the semiconductor device of the first comparative example, it is difficult to form the stitch line extending from the electrode 131 in the rising direction.

FIG. 10( a ) to FIG. 10( c ) show the steps of the method of manufacturing the semiconductor device of the second comparative example. (a) to (c) of FIG. 11 show steps subsequent to the steps shown in (a) to (c) of FIG. 10 . This manufacturing method is the same as the manufacturing method of the present embodiment in that the bent portion (damaged portion) is formed in-line. However, this manufacturing method differs from the manufacturing method of the present embodiment in that the wire is bent in a state where the wire is erected from the electrode. In the manufacturing method of the second comparative example, the wire 120 is first bonded to the electrode 131 of the semiconductor component 112 using the ceramic nozzle 108 to form the bonding portion 120a, and the ceramic nozzle 108 is raised while extending the wire 120 to form a self-contained wire 120. The joint part 120a is a wire part 120b extending upward (see (a) of FIG. 10 ). Then, the porcelain nozzle 108 is moved to the left and lowered (see (b) of FIG. 10 ). At this time, a damaged part 120 c is formed on the wire 120 by the inner edge of the front end of the ceramic nozzle 108 (see (c) of FIG. 10 ). Next, after raising the porcelain nozzle 108 while extending the wire 120, the porcelain nozzle 108 is moved to the right. At this time, the line portion 120b is in a state along the normal direction of the surface of the electrode 131 . In other words, the line portion 120b is in a state of standing upright from the surface of the electrode 131 .

Next, the porcelain nozzle 108 is lowered to bend the wire 120 at the damaged part 120c (see (a) of FIG. 11 ). That is, the wire portion 120d is bent toward the wire portion 120b side from the damaged portion 120c as a starting point. At this time, the axial direction of the wire portion 120 b is in a state along the normal direction of the surface of the electrode 131 . That is, the axial direction of the line part 120b is the same direction as the descending direction of the porcelain nozzle 108 descending along the normal direction (ie, the pressing direction of the porcelain nozzle 108 ). In this case, the axial force of the wire part 120b generated in accordance with the pressing force of the ceramic nozzle 108 becomes large. When the axial force of the wire part 120b increases, buckling will easily occur in the wire part 120b (see (b) of FIG. 11 ). When bending occurs in the line portion 120b, the bending portion 120e is formed in the line portion 120b due to the bending. At this time, stress acts on the bent portion 120e in accordance with the lowering of the nozzle 108, and this stress reduces the mechanical strength of the bent portion 120e. In this state, when the clamp is closed and the nozzle 108 is raised, the wire 120 may be cut at the bent portion 120e instead of the damaged portion 120c (see (c) of FIG. 11 ). That is, there is a possibility that the thread 120 cannot be cut at the target position (damaged portion 120c). In this case, the stitch line 121 is formed below the target height. Therefore, in the method of manufacturing a semiconductor device of the second comparative example, it is difficult to form stitch lines of a desired height.

In the manufacturing method of the semiconductor device 10 and the wire bonding apparatus 1 of the present embodiment, when the bent portion 20c is formed on the wire 20, the nozzle 8 is moved to the fourth target point P4 after passing through the third target point P3. Thereby, when the ceramic nozzle 8 is moved to the fourth target point P4, the axial direction D3 of the line portion 20b can be set in a state inclined from the normal direction D1. In this case, the axial direction D3 of the wire portion 20b is different from the pressing direction of the ceramic nozzle 8 (that is, the normal direction D1 in which the ceramic nozzle 8 descends), so the wire portion 20b is less likely to buckle when the ceramic nozzle 8 is lowered. bad condition. That is, in a state where the axial direction D3 of the wire portion 20b is different from the pressing direction of the nozzle 8, the axial force of the wire portion 20b generated in accordance with the pressing force of the nozzle 8 becomes small, so that the wire portion 20b is less likely to buckle. If such defects such as buckling are suppressed, it is possible to suppress a situation in which the thread 20 is cut at a portion other than the planned cutting portion C when the nozzle 8 is raised. As a result, the thread 20 can be reliably cut at the portion C to be cut, so that the stitch line 21 of a desired height can be easily formed.

Furthermore, in the manufacturing method of the semiconductor device 10 and the wire bonding apparatus 1 of this embodiment, unlike the case of using the method of cutting the wire 20 by pressing the pressing portion around the wire 20, the The repeated action of descending and rising of the porcelain mouth 8 cuts off the thread 20 . That is, the thread 20 is cut off only by the moving action of the ceramic nozzle 8 in the air without performing the pressing operation of pressing the thread 20 to the pressing part. In the case of pressing the wire against the extrusion part, the wire is pressed against the extrusion part by the porcelain nozzle, thereby forming a thin-walled part on the wire. In this thin portion, the mechanical strength is lower than that of other portions of the wire, so by raising the nozzle after forming the thin portion, the wire can be cut at the thin portion. When performing such a pressing operation, in order to press the wire, it is necessary to secure a pressing portion having a somewhat wide area around the joining portion of the wire. However, in a situation where the position of the pressing portion can be ensured to be limited, it may be difficult to perform the pressing action. For example, if the distance from the joint part of the wire to the pressing part is far away to a certain extent, parts provided between the joint part of the wire and the pressing part may become an obstacle, and the connection from the joint part to the pressing part cannot be performed. Squeeze action. Furthermore, if the position of the pressing part is limited, the position of the thin-walled part formed in the pressing part is limited, so it is difficult to form a stitch line of a desired height. On the other hand, in the manufacturing method of the semiconductor device 10 and the wire bonding apparatus 1 of the present embodiment, as described above, the wire 20 can be cut only by the action of the ceramic nozzle 8 in the air, so even if it is difficult to perform bonding, the wire 20 can be cut. When the thread 20 is squeezed by the pressing part, it is also possible to easily form the seam line 21 of a desired height.

In the present embodiment, when the nozzle 8 is moved to the fourth target point P4, the bending portion 20c is located at a position deviated from the normal line of the electrode 31 passing through the joint portion 20a. In this case, when the nozzle 8 is moved to the fourth target point P4, the state in which the axial direction D3 of the line portion 20b is inclined from the normal direction D1 can be more reliably maintained. In other words, the state in which the axial direction D3 of the wire portion 20b is different from the pressing direction of the nozzle 8 can be more reliably maintained. As a result, it is possible to more reliably suppress occurrence of a problem such as buckling of the wire portion 20b, and it is possible to more reliably cut the wire 20 at the portion C to be cut.

In this embodiment, when viewed from the normal direction D1, the moving distance of the ceramic nozzle 8 from the third target point P3 to the fourth target point P4 is longer than the radius of the front end surface 8a of the ceramic nozzle 8 . In this case, the situation where the length of the line part 20d from the porcelain nozzle 8 to the bending part 20c becomes extremely short can be suppressed. Thereby, it is possible to suppress a situation in which the repeated stress generated in the bending portion 20c becomes extremely small. As a result, the bent portion 20c can be more reliably processed into the portion C to be cut whose mechanical strength is lower than that of the joining portion 20a, so that the wire 20 can be cut more reliably at the portion C to be cut.

In this embodiment, when viewed from the normal direction D1, the movement distance of the nozzle 8 from the third target point P3 to the fourth target point P4 is the same as the movement distance of the nozzle 8 from the joint part 20a to the third target point P3. The movement distance of the mouth 8 is the same. In this case, the length of the line part 20d from the porcelain nozzle 8 to the bending part 20c may be made the same as the length of the line part 20b from the joining part 20a to the bending part 20c. Thereby, it is possible to suppress a situation in which repeated stress generated in the bending portion 20c becomes small. As a result, the bent portion 20c can be more reliably processed into the portion C to be cut whose mechanical strength is lower than that of the junction portion 20a, so that the wire 20 can be cut at the portion C to be cut more reliably.

In the present embodiment, when the porcelain nozzle 8 is moved to the fourth target point P4, the porcelain nozzle 8 is located directly above the joining portion 20a. In this case, the wire part 20b can be made to stand upright with respect to the surface of the electrode 31. FIG. In this state, by closing the clamp 9 and raising the nipple 8 , the seam line 21 in a state erected from the surface of the electrode 31 can be easily obtained.

In this embodiment, by performing a series of steps from step S11 to step S20 on the semiconductor wafer 12A, semiconductor wafer 12B, semiconductor wafer 12C, and semiconductor wafer 12D of the semiconductor component 12, the semiconductor wafer 12A, semiconductor wafer 12B, semiconductor The wafer 12C and the semiconductor wafer 12D respectively form stitch lines 21 . In addition, a series of steps from step S11 to step S20 are sequentially performed from the lowermost semiconductor wafer 12A to the uppermost semiconductor wafer 12D. In the semiconductor component 12, when the method of cutting the wire 20 by the extrusion action of the porcelain nozzle 8 that squeezes the wire 20 to the surrounding extrusion part is used, it is considered that the wire 20 will have a certain degree of wide area. The main surface 11a of the circuit substrate 11 is used as a pressing portion. However, in this method, if the stitch line 21B is to be formed on the upper semiconductor wafer 12B after the stitch line 21A is formed on the semiconductor wafer 12A, the movement of the ceramic tip 8 from the semiconductor wafer 12B to the main surface 11a of the circuit board 11 Sometimes the thread 20 cannot be cut by the pressing action of the ceramic nozzle 8 due to the obstruction of the stitch line 21A formed on the semiconductor wafer 12A in the middle. On the other hand, according to the manufacturing method of the semiconductor device 10 and the wire bonding apparatus 1 of the present embodiment, the wire 20 can be cut only by the movement of the nozzle 8 in the air without performing such a pressing operation. In a situation where it is difficult to cut the thread 20 by a pressing action, the stitch line 21 can be easily formed for each of the semiconductor wafer 12A, the semiconductor wafer 12B, the semiconductor wafer 12C, and the semiconductor wafer 12D.

As mentioned above, although embodiment of this invention was demonstrated, it is not limited to the said embodiment, It can implement in various forms.

1: Wire bonding device 2: Transport unit 3: Joining unit 4: Control unit 6: Mobile mechanism 7: Joining tool 8, 108: Porcelain mouth 8a: Front face 9: wire clamp 10: Semiconductor device 11a: main surface 12, 112: Semiconductor parts 12A, 12B, 12C, 12D: semiconductor wafer 12a, 12b, 12c, 12d: face exposed 20, 120: line 20a, 21a, 120a: bonding part 20b, 20d, 21b, 120b, 120d: line part 20c: bending part 21, 21A, 21B, 21C, 21D: pin line 21c: upper end 31, 31A, 31B, 31C, 31D, 131: electrodes 120c: damage part C: cut plan CL: central axis D1: normal direction D2: Parallel axis direction D3, D4: Axial d1～d4: moving distance H: height L1, L2: Length P1: the first target point P2: Second target point P3: The third target point (first position) P4: The fourth target point (second position) P5: fifth target point P6: The sixth target point P7: The seventh target point R: Radius S11～S20: Steps θ1～θ5: Angle

FIG. 1 is a diagram showing the configuration of a wire bonding apparatus according to an embodiment. FIG. 2 is a diagram showing the configuration of a semiconductor device manufactured using the wire bonding apparatus shown in FIG. 1 . Fig. 3 is a diagram showing the shape of the stitch line shown in Fig. 2 and the target point of the spout. FIG. 4 is a flowchart showing the steps of a method of manufacturing a semiconductor device according to an embodiment. FIG. 5( a ), FIG. 5( b ), and FIG. 5( c ) are diagrams showing steps of a method of manufacturing a semiconductor device according to an embodiment. FIG. 6( a ), FIG. 6( b ), and FIG. 6( c ) are diagrams showing steps following FIG. 5( a ) to FIG. 5( c ). (a) of FIG. 7, (b) of FIG. 7, and (c) of FIG. 7 are diagrams showing steps following (a) to (c) of FIG. 6 . FIG. 8 is a diagram showing the shape of lines in the step of FIG. 6( a ). FIG. 9( a ) and FIG. 9( b ) are diagrams showing the steps of the method of manufacturing the semiconductor device of the first comparative example. 10( a ), FIG. 10( b ), and FIG. 10( c ) are diagrams showing steps of a method of manufacturing a semiconductor device according to a second comparative example. (a) of FIG. 11, (b) of FIG. 11, and (c) of FIG. 11 are figures which show the procedure following FIG. 10 (a) - FIG. 10 (c).

8: porcelain mouth

8a: Front face

12A, 12B: semiconductor wafer

12a, 12b: Show face

20a: Bonding part

20b, 20d: line part

20c: bending part

31A, 31B: electrodes

CL: central axis

D1: normal direction

D2: Parallel axis direction

D3, D4: Axial

d1~d4: moving distance

L1, L2: Length

P1: the first target point

P2: Second target point

P3: The third target point (first position)

P4: The fourth target point (second position)

R: Radius

S14, S15: steps

θ1~θ5: Angle

Claims (8)

A method of manufacturing a semiconductor device, comprising: In the first step, after using the porcelain nozzle to bond the wire to the electrode, the porcelain nozzle is moved to the first position while extending the wire, thereby pulling the wire out to a predetermined length, and the first position is a position above a joint of the wire and a position deviated from a normal to the surface of the electrode passing through the joint; In the second step, after the porcelain nozzle is moved to the first position, the porcelain nozzle is moved to the second position while extending the wire, thereby forming a bending portion on the wire, and the first The second position is a position higher than the first position, and is a position deviated from the first position to the joint portion side when viewed from the normal direction in which the normal line extends; In the third step, after the bent portion is formed, the lowering and rising of the porcelain nozzle along the normal direction is repeated several times, thereby processing the bent portion into a portion to be cut; and In the fourth step, after repeating the lowering and raising of the porcelain mouth many times, in order to form a seam line, the porcelain mouth is raised in the state of closing the thread clamp, so as to cut the thread at the cutting target. cut off. The method of manufacturing a semiconductor device according to claim 1, wherein when the ceramic nozzle is moved to the second position, the bent portion is located at a position deviated from the normal line passing through the bonding portion . The method of manufacturing a semiconductor device according to claim 1 or claim 2, wherein when viewed from the normal direction, the movement of the ceramic nozzle from the first position to the second position The distance is longer than the radius of the front end face of the porcelain mouth. The method of manufacturing a semiconductor device according to any one of claim 1 to claim 3, wherein when viewed from the normal direction, the distance from the first position to the second position is The movement distance of the porcelain mouth is the same as the movement distance of the porcelain mouth from the joint part to the first position. The method of manufacturing a semiconductor device according to any one of claim 1 to claim 4, wherein when the porcelain nozzle is moved to the second position, the front end surface of the porcelain nozzle is positioned at the joint portion Directly above. The method for manufacturing a semiconductor device according to any one of claim 1 to claim 5, wherein on the substrate, a plurality of semiconductor wafers are stacked in stages so that the main surface of each of the semiconductor wafers is exposed as an exposed surface. , the electrodes are provided on the exposed surfaces of each of the semiconductor wafers, The stitch line is formed for each of the semiconductor wafers by performing a series of steps from the first step to the fourth step for each of the semiconductor wafers. The method of manufacturing a semiconductor device according to claim 6, wherein the semiconductor wafer is processed in the order from the semiconductor wafer in the upper stage to the semiconductor wafer in the lower stage, or in the order from the semiconductor wafer in the lower stage to the semiconductor wafer in the upper stage. A series of steps from the first step to the fourth step are performed. A wire bonding device, comprising: an engaging unit comprising a ceramic mouth configured to be relatively movable relative to the electrode; and a control unit that controls the operation of the engaging unit, The control unit provides the following control signals to the engagement unit: The first control signal is to move the ceramic nozzle to the first position while extending the wire after using the ceramic nozzle to bond the wire to the electrode, thereby pulling the wire out by a predetermined length, The first position is a position above a joint of the wire, and is a position deviated from a normal line of a surface of the electrode passing through the joint; The second control signal moves the ceramic nozzle to the second position while extending the wire after the porcelain nozzle is moved to the first position, thereby forming a bending part on the wire, so The second position is a position higher than the first position, and is a position deviated from the first position to the joint portion side when viewed from the normal direction in which the normal line extends; The third control signal is to repeat the lowering and raising of the ceramic mouth along the normal direction several times after forming the bent part, thereby processing the bent part into a part to be cut; as well as The fourth control signal, after repeating the lowering and rising of the porcelain mouth many times, in order to form a stitch line, the porcelain mouth is raised in the state of closing the wire clamp, so as to make the thread at the cutting predetermined cut off.

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