JP2009135168A - Wire bonding method - Google Patents

Wire bonding method Download PDF

Info

Publication number
JP2009135168A
JP2009135168A JP2007308362A JP2007308362A JP2009135168A JP 2009135168 A JP2009135168 A JP 2009135168A JP 2007308362 A JP2007308362 A JP 2007308362A JP 2007308362 A JP2007308362 A JP 2007308362A JP 2009135168 A JP2009135168 A JP 2009135168A
Authority
JP
Japan
Prior art keywords
wire
capillary
bond point
bonding
ball
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007308362A
Other languages
Japanese (ja)
Inventor
Jun Nogawa
潤 野川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Electronics Corp filed Critical NEC Electronics Corp
Priority to JP2007308362A priority Critical patent/JP2009135168A/en
Publication of JP2009135168A publication Critical patent/JP2009135168A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To solve a problem wherein wire bonding can not be performed in high position accuracy because a relative position of the center of a ball which is joined to a first bonding point is not stabilized owing to the eccentricity of the ball and a variation in the size of the ball in a conventional method. <P>SOLUTION: The wire bonding method includes the step of: repairing an inclined wire 11 by moving the position of a capillary 10 so that the capillary is close to a first bonding point 21 in a state in which the wire 11 inclined from the base end of the wire 11 to a first bonding point 21 side by bonding at a second bonding point 22 is inserted before cutting the wire 11. According to the wire bonding method, since the inclination of the wire 11 is decreased, the eccentricity of a ball 11b and a variation in the size of the ball 11b are suppressed, and the relative position of the center of the ball which is joined to the first bonding point to the first bonding point 21 is stabilized. Wire bonding is thereby obtained in high position accuracy. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、ワイヤボンディング方法に関する。   The present invention relates to a wire bonding method.

従来のワイヤボンディング方法は、図５に示すように、まず、半導体チップ８５が実装された基板８２上において、キャピラリ８０の先端から延在したワイヤ８１を第１ボンド点９１および第２ボンド点９２の順に、ボンディングする。図４（ａ）に示すように、第２ボンド点９２でのボンディングにより、ワイヤ８１がワイヤ８１の基端部から第１ボンド点９１側へ傾斜する。これにより、ワイヤ８１の先端に、ワイヤテール８１ａ（図４（ｂ）参照）が形成される。続けて、キャピラリ８０を上昇させ、所定の長さのワイヤ８１がキャピラリ８０の先端から延在した時点で、クランパ８３を閉じて、ワイヤ８１を第２ボンド点９２で切断する（図４（ｂ））。その後、ワイヤ８１の先端の側方に配置された放電電極８４によりワイヤテール８１ａに向け放電を行い（図４（ｃ））、キャピラリ８０の先端にボール８１ｂを形成する（図４（ｄ））。   In the conventional wire bonding method, as shown in FIG. 5, first, on a substrate 82 on which a semiconductor chip 85 is mounted, a wire 81 extending from the tip of a capillary 80 is connected to a first bond point 91 and a second bond point 92. Bond in order. As shown in FIG. 4A, the wire 81 is inclined from the base end portion of the wire 81 toward the first bond point 91 by the bonding at the second bond point 92. Thereby, a wire tail 81a (see FIG. 4B) is formed at the tip of the wire 81. Subsequently, the capillary 80 is raised, and when the wire 81 having a predetermined length extends from the tip of the capillary 80, the clamper 83 is closed and the wire 81 is cut at the second bond point 92 (FIG. 4B). )). Thereafter, discharge is performed toward the wire tail 81a by the discharge electrode 84 disposed on the side of the tip of the wire 81 (FIG. 4C), and a ball 81b is formed at the tip of the capillary 80 (FIG. 4D). .

このとき、キャピラリ８０とワイヤ８１との摩擦抵抗を低減する為に、キャピラリ８０に挿通されたワイヤ８１とキャピラリ８０の内壁との間には一般的に４〜１５μｍ程度のクリアランスが設けられている。また、ワイヤ８１の先端に形成されたボール８１ｂを第１ボンド点９１に所要の位置精度で接合する為に、キャピラリ８０の先端内部にはボール８１ｂを保持するための面取り開口部が存在している。その為、第２ボンド点９２でボンディングする際にワイヤ８１は第１ボンド点９１の方向に引っ張られた状態となり、基板８２とキャピラリ８０に押し潰されるようにしてワイヤ８１の一部が変形し、ワイヤ８１がワイヤ８１の基端部から第１ボンド点９１側へ傾斜する。すなわち、ワイヤ８１の先端に形成されたワイヤテール８１ａは、第２ボンド点９２と第１ボンド点９１を結んだ線分方向に曲がっている（図４（ａ）〜（ｃ））。このように、キャピラリ８０の軸線より曲がったワイヤテール８１ａに放電すると、図４（ｄ）に示すように、キャピラリ８０の軸線からずれた位置にボール８１ｂが形成される。   At this time, in order to reduce the frictional resistance between the capillary 80 and the wire 81, a clearance of about 4 to 15 μm is generally provided between the wire 81 inserted into the capillary 80 and the inner wall of the capillary 80. . Further, in order to join the ball 81b formed at the tip of the wire 81 to the first bond point 91 with a required positional accuracy, a chamfer opening for holding the ball 81b exists inside the tip of the capillary 80. Yes. Therefore, when bonding is performed at the second bond point 92, the wire 81 is pulled in the direction of the first bond point 91, and a part of the wire 81 is deformed so as to be crushed by the substrate 82 and the capillary 80. The wire 81 is inclined from the proximal end portion of the wire 81 to the first bond point 91 side. That is, the wire tail 81a formed at the tip of the wire 81 is bent in the direction of the line segment connecting the second bond point 92 and the first bond point 91 (FIGS. 4A to 4C). As described above, when discharging to the wire tail 81a bent from the axis of the capillary 80, a ball 81b is formed at a position shifted from the axis of the capillary 80, as shown in FIG.

このため、特に固定型放電電極においては、ボール８１ｂの偏芯やボール８１ｂ寸法が変動し、さらに、第１ボンド点９１に接合されるボール８１ｂの中心の第１ボンド点９１に対する相対位置が変化するため、ワイヤボンディングの位置精度が低下するという問題があった。また、ワイヤ８１とキャピラリ８０内壁との間に設けられるクリアランスを縮小するには、限界があった。   For this reason, especially in the fixed discharge electrode, the eccentricity of the ball 81b and the size of the ball 81b vary, and the relative position of the center of the ball 81b joined to the first bond point 91 with respect to the first bond point 91 changes. Therefore, there is a problem that the position accuracy of wire bonding is lowered. In addition, there is a limit in reducing the clearance provided between the wire 81 and the inner wall of the capillary 80.

特許文献１には、キャピラリの先端より延在したワイヤのテールを放電電極側に曲げ、このテールの先端が放電電極に向くようにキャピラリを移動させ、その後放電電極より放電を行ってワイヤの先端にボールを形成するこが記載されている。   In Patent Document 1, the tail of the wire extending from the tip of the capillary is bent toward the discharge electrode, the capillary is moved so that the tip of the tail faces the discharge electrode, and then the discharge is performed from the discharge electrode to Describes forming a ball.

特許文献２には、セカンドボンド接合後にワイヤを引っ張り、減径部分を形成し、再度ワイヤを引っ張ることで強度が低下した減径部分でワイヤを切断することが述べられている。   Patent Document 2 describes that a wire is pulled after second bond bonding to form a reduced diameter portion, and the wire is cut at a reduced diameter portion whose strength is reduced by pulling the wire again.

特許文献３には、第１のボールを正規のボンド点以外の任意の箇所にボールボンドして再びキャピラリの先端より延在した第２のテールを形成し、この第２のテールに電気トーチにより第２の放電を行って第２のボールを形成することが記載されている。
特開２０００−４９１８６号公報 特開２００７−６６９９１号公報 特開２０００−２５２３１７号公報 In Patent Document 3, the first ball is ball-bonded at an arbitrary location other than the normal bond point to form a second tail extending from the tip of the capillary again, and this second tail is formed by an electric torch. It is described that a second discharge is performed to form a second ball.
JP 2000-49186 A JP 2007-66991 A JP 2000-252317 A

しかしながら、特許文献１に記載された技術では、ワイヤテールを放電電極側に曲げるため、ボールが形成された直上部分のワイヤに曲げ癖が残り、この後の工程で再びワイヤを第１ボンド点から第２ボンド点までワイヤボンディングした際に、隣接ワイヤでショート不良の要因となるという問題がある。   However, in the technique described in Patent Document 1, since the wire tail is bent toward the discharge electrode, a bending wrinkle remains in the wire immediately above where the ball is formed, and the wire is connected again from the first bond point in the subsequent process. When wire bonding is performed up to the second bond point, there is a problem of causing a short circuit failure in the adjacent wire.

また、特許文献２に記載された技術では、ワイヤの曲がりを引張矯正し、かつワイヤ一部に減径部分を形成するため、ワイヤの矯正過程においてワイヤ切断前にその減径部分でワイヤが破断してしまうという問題が生じる。   Moreover, in the technique described in Patent Document 2, since the wire bending is straightened and a reduced diameter portion is formed in a part of the wire, the wire breaks at the reduced diameter portion before the wire is cut in the wire correction process. The problem of end up occurs.

さらに、特許文献３に記載された技術では、ワイヤテールの矯正のために、正規のボンド点以外でのボンドする工程を必要とし、ワイヤ消費量が増加し、コスト上昇につながるという問題がある。   Furthermore, the technique described in Patent Document 3 requires a bonding step other than the normal bond point for correcting the wire tail, and there is a problem that the amount of wire consumption increases and the cost increases.

本発明によるワイヤボンディング方法は、
キャピラリの先端から延在したワイヤを第１ボンド点および第２ボンド点の順に、ボンディングをするボンディング工程と、
前記第２ボンド点での前記ボンディングによって前記ワイヤの基端部から前記第１ボンド点側へ傾斜したワイヤを挿通した状態で、前記キャピラリの位置を前記第１ボンド点に近づけるように移動させる移動工程と、
前記移動によって前記ワイヤの前記傾斜を低減させた位置で前記ワイヤと前記キャピラリとを固定し、前記キャピラリを上昇して前記ワイヤを前記第２ボンド点で切断する切断工程と、
前記キャピラリの先端から延在した前記ワイヤの先端部に放電することにより前記キャピラリの先端にボールを形成するボール形成工程と、
を含むことを特徴とする。 The wire bonding method according to the present invention includes:
A bonding step of bonding a wire extending from the tip of the capillary in the order of the first bond point and the second bond point;
Movement to move the position of the capillary closer to the first bond point with the wire inclined from the base end portion of the wire to the first bond point side inserted by the bonding at the second bond point Process,
A cutting step of fixing the wire and the capillary at a position where the inclination of the wire is reduced by the movement, raising the capillary and cutting the wire at the second bond point;
Forming a ball on the tip of the capillary by discharging to the tip of the wire extending from the tip of the capillary; and
It is characterized by including.

このワイヤボンディング方法は、ワイヤの切断前にキャピラリを移動させることにより、ボンディングによって傾斜したワイヤを修正する工程を含んでいる。かかるワイヤボンディング方法によれば、ワイヤの傾斜が低減されるため、ボールの偏芯およびボール寸法の変動が抑制され、第１ボンド点に接合されるボールの中心の第１ボンド点に対する相対位置が安定するためワイヤボンディングを高い位置精度で実現できる。   This wire bonding method includes a step of correcting the inclined wire by bonding by moving the capillary before cutting the wire. According to this wire bonding method, since the inclination of the wire is reduced, the eccentricity of the ball and the fluctuation of the ball size are suppressed, and the relative position of the center of the ball bonded to the first bond point with respect to the first bond point is Wire bonding can be realized with high positional accuracy for stability.

本発明によれば、ボールの偏芯およびボール寸法の変動が抑制され、第１ボンド点に接合されるボールの中心の第１ボンド点に対する相対位置が安定するためワイヤボンディングを高い位置精度で行うことができる。   According to the present invention, the eccentricity of the ball and the fluctuation of the ball size are suppressed, and the relative position of the center of the ball bonded to the first bond point with respect to the first bond point is stabilized, so that wire bonding is performed with high positional accuracy. be able to.

以下、図面を参照しつつ、本発明によるワイヤボンディング方法の好適な実施形態について詳細に説明する。なお、図面の説明においては、同一要素には同一符号を付し、重複する説明を省略する。   Hereinafter, preferred embodiments of a wire bonding method according to the present invention will be described in detail with reference to the drawings. In the description of the drawings, the same reference numerals are assigned to the same elements, and duplicate descriptions are omitted.

（第１実施形態）
図１および図２は、本発明によるワイヤボンディング方法を説明するための図である。 (First embodiment)
1 and 2 are diagrams for explaining a wire bonding method according to the present invention.

本実施形態のワイヤボンディング方法は、図２に示すように、まず、半導体チップ４１が実装された基板４０上において、キャピラリ１０の先端から延在したワイヤ１１を第１ボンド点２１および第２ボンド点２２の順に、ボンディングをする。図１（ａ）乃至（ｅ）では、第２ボンド点２２でのボンディングを示している。通常、第１ボンド点２１は半導体チップ４１上に形成されたパッド（付図示）に設けられ、第２ボンド点２２は基板４０上に形成されたパッド（不図示）設けられる。   In the wire bonding method of the present embodiment, as shown in FIG. 2, first, on the substrate 40 on which the semiconductor chip 41 is mounted, the wire 11 extending from the tip of the capillary 10 is connected to the first bond point 21 and the second bond. Bonding is performed in the order of the points 22. 1A to 1E show bonding at the second bond point 22. Usually, the first bond point 21 is provided on a pad (not shown) formed on the semiconductor chip 41, and the second bond point 22 is provided on a pad (not shown) formed on the substrate 40.

図１（ａ）に示すように、第２ボンド点２２でのボンディングにより、ワイヤ１１がワイヤ１１の基端部１２から第１ボンド点２１側へ傾斜する。ワイヤ１１の基端部１２とは、第２ボンド点２２側にあるワイヤに対してキャピラリ１０側にあるワイヤの一部分を意味する。いいかえると、第２ボンド点２２でのボンディングにより変形されたワイヤを含まない部分であって、キャピラリ１０の中心軸とほぼ平行に延在するワイヤの一部分である。
第２ボンド点２２でのボンディングによってワイヤ１１の基端部１２から第１ボンド点２１側へ傾斜したワイヤ１１を挿通した状態で、キャピラリ１０を鉛直方向に上昇し、キャピラリ１０の位置を第１ボンド点２１に近づけるように移動させる。（図１（ｂ）及び（ｃ）参照）。なお、この上昇工程および移動工程については、以下で詳述する。 As shown in FIG. 1A, the wire 11 is inclined from the proximal end portion 12 of the wire 11 to the first bond point 21 side by bonding at the second bond point 22. The proximal end portion 12 of the wire 11 means a part of the wire on the capillary 10 side with respect to the wire on the second bond point 22 side. In other words, it is a portion that does not include the wire deformed by bonding at the second bond point 22 and that is a portion of the wire that extends substantially parallel to the central axis of the capillary 10.
With the wire 11 inclined from the proximal end portion 12 of the wire 11 to the first bond point 21 side inserted by bonding at the second bond point 22, the capillary 10 is raised in the vertical direction, and the position of the capillary 10 is moved to the first position. Move to approach the bond point 21. (See FIGS. 1B and 1C). The ascending process and the moving process will be described in detail below.

このとき、キャピラリ１０とワイヤ１１との摩擦抵抗を低減する為に、キャピラリ１０に挿通されたワイヤ１１とキャピラリ１０の内壁との間には一般的に４〜１５μｍ程度のクリアランスが設けられている。また、キャピラリ１０の先端は、ボール１１ｂの中心がキャピラリ１０の中心軸とほぼ同軸上に形成されるように、ボール１１ｂを保持するために面取りされた開口部を有している。
その為、第２ボンド点２２でボンディングする際にワイヤ１１は第１ボンド点２１の方向に引っ張られた状態となり、基板４０とキャピラリ１０に押し潰されるようにしてワイヤ１１の一部が変形し、ワイヤ１１の端部がワイヤ１１の基端部１２から第１ボンド点２１側へ傾斜する。すなわち、ワイヤ１１の端部に形成されたワイヤテール１１ａは、第２ボンド点２２から延在するように形成されており、第２ボンド点２２と第１ボンド点２１を結んだ線分方向に曲がる。 At this time, in order to reduce the frictional resistance between the capillary 10 and the wire 11, a clearance of about 4 to 15 μm is generally provided between the wire 11 inserted through the capillary 10 and the inner wall of the capillary 10. . The tip of the capillary 10 has a chamfered opening for holding the ball 11b so that the center of the ball 11b is formed substantially coaxially with the center axis of the capillary 10.
Therefore, when the bonding is performed at the second bond point 22, the wire 11 is pulled in the direction of the first bond point 21, and a part of the wire 11 is deformed so as to be crushed by the substrate 40 and the capillary 10. The end portion of the wire 11 is inclined from the proximal end portion 12 of the wire 11 to the first bond point 21 side. That is, the wire tail 11 a formed at the end of the wire 11 is formed so as to extend from the second bond point 22, and in the direction of the line segment connecting the second bond point 22 and the first bond point 21. Bend.

次に、キャピラリ１０の移動によってワイヤ１１の傾斜を低減させた位置で、クランパ３０を閉じてワイヤ１１とキャピラリ１０とを固定し、キャピラリ１０を上昇してワイヤ１１を第２ボンド点２２で切断する。図１（ｄ）に示すように、ワイヤ１１は先端部分にワイヤテール１１ａを有している。ワイヤ１１の切断は、第２ボンド点２２とワイヤテール１１ａの先端部との接続部分でなされる（図１（ｄ））。   Next, at a position where the inclination of the wire 11 is reduced by the movement of the capillary 10, the clamper 30 is closed to fix the wire 11 and the capillary 10, and the capillary 10 is raised to cut the wire 11 at the second bond point 22. To do. As shown in FIG.1 (d), the wire 11 has the wire tail 11a in the front-end | tip part. The wire 11 is cut at the connection portion between the second bond point 22 and the tip of the wire tail 11a (FIG. 1D).

第２ボンド点２２におけるワイヤ１１は、キャピラリ１０による圧力により断面厚の薄い部分が形成されるため、第２ボンド点２２に超音波をあてながら加熱してワイヤ１１を引っ張ることにより、第２ボンド点２２とワイヤテール１１ａ先端部との接続部分でワイヤ１１を切断することができる。これにより、キャピラリ１０の先端から所定の長さのワイヤ１１が延在し、一定の大きさのボール１１ｂが得られる。キャピラリ１０の先端から延在するワイヤ１１の長さは適宜調整できるため、ボール１１ｂの大きさも適宜調整できる。   Since the wire 11 at the second bond point 22 is formed with a thin section by the pressure from the capillary 10, the wire 11 is heated while applying ultrasonic waves to the second bond point 22 to pull the wire 11. The wire 11 can be cut at the connecting portion between the point 22 and the tip of the wire tail 11a. As a result, the wire 11 having a predetermined length extends from the tip of the capillary 10, and a ball 11b having a certain size is obtained. Since the length of the wire 11 extending from the tip of the capillary 10 can be adjusted as appropriate, the size of the ball 11b can also be adjusted as appropriate.

その後、ワイヤ１１の先端の側方に配置された放電電極３１を用いて、キャピラリ１０の先端から延在したワイヤ１１の先端部、すなわちワイヤテール１１ａの先端部に向けて放電を行い（図１（ｄ））、これによりキャピラリ１０の先端にボール１１ｂを形成する（図１（ｅ））。   Thereafter, discharge is performed toward the distal end portion of the wire 11 extending from the distal end of the capillary 10, that is, the distal end portion of the wire tail 11a, using the discharge electrode 31 disposed on the side of the distal end of the wire 11 (FIG. 1). (D)), thereby forming a ball 11b at the tip of the capillary 10 (FIG. 1 (e)).

ここで、上記に述べたキャピラリ１０の上昇工程および移動工程について、詳述する。
図１（ｂ）に示すように、第２ボンド点２２でのボンディング後、引き続きワイヤ１１を挿通した状態でキャピラリ１０を鉛直方向に上昇させ、キャピラリ１０の先端から所定の長さのワイヤ１１を延在させる。このときキャピラリ１０は、ワイヤ１１の基端部１２の直径以上の距離を上昇させることが好ましい。
続けて、キャピラリ１０を第１ボンド点２１に近づけるように水平移動させる。このときキャピラリ１０は、キャピラリ１０の位置を第１ボンド点２１に近づけるように、キャピラリ１０の先端部の孔径以下の距離を水平移動することが好ましい。また、キャピラリ１０の軸心を第１ボンド点２１に近づけてワイヤ１１の傾斜の方向と反対側へ反らすようにしてもよい。
このようにキャピラリ１０の位置を移動させることにより、ワイヤ１１の基端部１２から第１ボンド点２１側へ傾斜したワイヤ１１の傾斜を低減し、ワイヤ１１の湾曲が伸ばされる。すなわち、ワイヤ１１が元の形状にもどるように矯正される。いいかえると、ワイヤテール１１ａの先端部の向きがキャピラリ１０の軸方向に近づく。 Here, the raising process and the moving process of the capillary 10 described above will be described in detail.
As shown in FIG. 1B, after bonding at the second bond point 22, the capillary 10 is raised in the vertical direction while the wire 11 is continuously inserted, and the wire 11 having a predetermined length is pulled from the tip of the capillary 10. Extend. At this time, it is preferable that the capillary 10 raises the distance more than the diameter of the base end part 12 of the wire 11.
Subsequently, the capillary 10 is horizontally moved so as to approach the first bond point 21. At this time, the capillary 10 preferably moves horizontally by a distance equal to or smaller than the hole diameter of the tip of the capillary 10 so that the position of the capillary 10 approaches the first bond point 21. Further, the axial center of the capillary 10 may be brought close to the first bond point 21 and warped in the opposite direction to the direction of inclination of the wire 11.
By moving the position of the capillary 10 in this way, the inclination of the wire 11 inclined from the proximal end portion 12 of the wire 11 toward the first bond point 21 is reduced, and the bending of the wire 11 is extended. That is, the wire 11 is corrected so as to return to the original shape. In other words, the direction of the tip of the wire tail 11 a approaches the axial direction of the capillary 10.

また、図３は、本実施形態において、上述のキャピラリ１０による移動前と移動後のワイヤ１１およびワイヤテール１１ａを示す図である。図３に示すように、キャピラリ１０の移動によって、ワイヤ１１の基端部１２から第１ボンド点２１側へのワイヤ１１の傾斜は、低減される。いいかえると、ワイヤテール１１ａの先端の向きは、キャピラリ１０の軸方向を向くように修正される。ワイヤテール１１ａの先端の向きが、キャピラリ１０の軸方向に近づいたかどうかは、目視により確認することができる。
また、図３において、ｄ１はワイヤ１１の直径、ｄ２はワイヤ１１の直径方向においてワイヤテール１１ａの先端部とワイヤ１１の外周との最大の距離を示している。上記キャピラリ１０の移動によって、ｄ２はｄ１以下となる。いいかえると、キャピラリ１０の中心軸からワイヤテール１１ａの先端までの距離は、ワイヤ１１の半径以下となる。これにより、ボール１１ｂの偏芯およびボール１１ｂ寸法の変動が抑制される。 FIG. 3 is a view showing the wire 11 and the wire tail 11a before and after the movement by the capillary 10 in the present embodiment. As shown in FIG. 3, the inclination of the wire 11 from the proximal end portion 12 of the wire 11 toward the first bond point 21 is reduced by the movement of the capillary 10. In other words, the direction of the tip of the wire tail 11 a is corrected so as to face the axial direction of the capillary 10. Whether or not the direction of the tip of the wire tail 11a has approached the axial direction of the capillary 10 can be confirmed by visual observation.
3, d1 indicates the diameter of the wire 11, and d2 indicates the maximum distance between the distal end portion of the wire tail 11a and the outer periphery of the wire 11 in the diameter direction of the wire 11. Due to the movement of the capillary 10, d2 becomes d1 or less. In other words, the distance from the central axis of the capillary 10 to the tip of the wire tail 11 a is equal to or less than the radius of the wire 11. Thereby, the eccentricity of the ball 11b and the fluctuation of the ball 11b dimension are suppressed.

本実施形態の効果を説明する。
本実施形態のワイヤボンディング方法は、ワイヤ１１の切断前にキャピラリ１０を移動させることにより、ボンディングによって傾斜したワイヤ１１を修正する工程を含んでいる。かかるワイヤボンディング方法によれば、ワイヤ１１の傾斜が低減されるため、ボール１１ｂの偏芯およびボール１１ｂ寸法の変動が抑制され、第１ボンド点に接合されるボールの中心の第１ボンド点２１に対する相対位置が安定するためワイヤボンディングを高い位置精度で実現できる。 The effect of this embodiment will be described.
The wire bonding method of the present embodiment includes a step of correcting the inclined wire 11 by bonding by moving the capillary 10 before cutting the wire 11. According to this wire bonding method, since the inclination of the wire 11 is reduced, the eccentricity of the ball 11b and the fluctuation of the ball 11b dimension are suppressed, and the first bond point 21 at the center of the ball to be joined to the first bond point. Since the relative position with respect to is stable, wire bonding can be realized with high positional accuracy.

また、本実施形態のワイヤボンディング方法は、ワイヤ１１の傾斜を修正するためにキャピラリ１０を移動させる過程において、ワイヤ１１をクランパ３０で固定せず、ワイヤ１１とキャピラリ１０内壁の間に設けられたクリアランス範囲内でワイヤ１１が自由に移動できる為、第２ボンド点２２におけるワイヤ１１に与えるストレスが軽減され、ワイヤの傾斜修正前に第２ボンド点２２でワイヤ１１が破断してしまうという問題が低減できる。これにより、位置精度の高いワイヤボンディングがより少ない処理時間で実現できる。   The wire bonding method of the present embodiment is provided between the wire 11 and the capillary 10 inner wall without fixing the wire 11 with the clamper 30 in the process of moving the capillary 10 to correct the inclination of the wire 11. Since the wire 11 can move freely within the clearance range, the stress applied to the wire 11 at the second bond point 22 is reduced, and the wire 11 is broken at the second bond point 22 before the wire inclination is corrected. Can be reduced. Thereby, wire bonding with high position accuracy can be realized in a shorter processing time.

さらにまた、本実施形態のワイヤボンディング方法は、矯正するためにキャピラリ１０の打点数を増加する必要がなく、また、ワイヤの傾斜修正のための特別な器具を必要としないため、処理時間の増加が抑えられる。また、処理時間の増加を短縮するために、ボールバンプを接続する場所をリード付近に設けた場合には、リード面積が増加し、近年の製品小型化の要求への対応が難しくなるという問題が生じることもない。   Furthermore, the wire bonding method of the present embodiment does not require an increase in the number of hit points of the capillary 10 for correction, and does not require a special instrument for correcting the inclination of the wire, thereby increasing the processing time. Is suppressed. In addition, in order to shorten the increase in processing time, when a place where a ball bump is connected is provided in the vicinity of the lead, the lead area increases, which makes it difficult to meet the recent demand for product miniaturization. It does not occur.

本実施形態のワイヤボンディング方法を用いて、ワイヤボンディングされた半導体装置を製造することができる。本実施形態のワイヤボンディング方法を用いる工程以外は、公知の方法を用いることができる。これにより、ワイヤボンディングを高い位置精度で実現されることにより、信頼性が向上した半導体装置が得られる。   By using the wire bonding method of this embodiment, a wire bonded semiconductor device can be manufactured. A publicly known method can be used except a process using the wire bonding method of this embodiment. As a result, a semiconductor device with improved reliability can be obtained by realizing wire bonding with high positional accuracy.

本発明によるワイヤボンディング方法は、上記実施形態に限定されるものではなく、様々な変形が可能である。
上記実施形態においてキャピラリの移動工程は、キャピラリを鉛直方向に移動させた後キャピラリの位置を第１ボンド点に近づけるように水平移動したが、例えば、キャピラリの位置を第１ボンド点に近づけるように斜めに移動してもよい。 The wire bonding method according to the present invention is not limited to the above embodiment, and various modifications are possible.
In the above-described embodiment, the capillary moving step moves the capillary in the vertical direction and then horizontally moves the capillary position closer to the first bond point. For example, the capillary position moves closer to the first bond point. You may move diagonally.

ワイヤに用いられる材料としては、特に限定されないが、例えば、銅、金などが挙げられる。特にワイヤに用いられる材料として銅を用いた場合には、ワイヤの第１ボンディング点側への傾斜による影響が大きいため、本発明によるワイヤボンディングの高い位置精度がより効果的に実現できる。   Although it does not specifically limit as a material used for a wire, For example, copper, gold | metal | money etc. are mentioned. In particular, when copper is used as the material used for the wire, since the influence of the inclination of the wire toward the first bonding point is large, the high positional accuracy of the wire bonding according to the present invention can be more effectively realized.

本発明によるワイヤボンディング方法を説明するための図である。It is a figure for demonstrating the wire bonding method by this invention. 本発明によるワイヤボンディング方法を説明するための図である。It is a figure for demonstrating the wire bonding method by this invention. ワイヤおよびワイヤテールを示す図である。It is a figure which shows a wire and a wire tail. 従来のワイヤボンディング方法を説明するための図である。It is a figure for demonstrating the conventional wire bonding method. 従来のワイヤボンディング方法を説明するための図である。It is a figure for demonstrating the conventional wire bonding method.

符号の説明Explanation of symbols

１０ キャピラリ
１１ ワイヤ
１１ａ ワイヤテール
１１ｂ ボール
１２ 基端部
２１ 第１ボンド点
２２ 第２ボンド点
３０ クランパ
３１ 放電電極
４０ 基板
４１ 半導体チップ 10 Capillary 11 Wire 11a Wire tail 11b Ball 12 Base end 21 First bond point 22 Second bond point 30 Clamper 31 Discharge electrode 40 Substrate 41 Semiconductor chip

Claims (4)

キャピラリの先端から延在したワイヤを第１ボンド点および第２ボンド点の順に、ボンディングをするボンディング工程と、
前記第２ボンド点での前記ボンディングによって前記ワイヤの基端部から前記第１ボンド点側へ傾斜したワイヤを挿通した状態で、前記キャピラリの位置を前記第１ボンド点に近づけるように移動させる移動工程と、
前記移動によって前記ワイヤの前記傾斜を低減させた位置で前記ワイヤと前記キャピラリとを固定し、前記キャピラリを上昇して前記ワイヤを前記第２ボンド点で切断する切断工程と、
前記キャピラリの先端から延在した前記ワイヤの先端部に放電することにより前記キャピラリの先端にボールを形成するボール形成工程と、
を含むことを特徴とするワイヤボンディング方法。 A bonding step of bonding the wires extending from the tip of the capillary in the order of the first bond point and the second bond point;
Movement to move the position of the capillary closer to the first bond point with the wire inclined from the base end portion of the wire to the first bond point side inserted by the bonding at the second bond point Process,
A cutting step of fixing the wire and the capillary at a position where the inclination of the wire is reduced by the movement, raising the capillary and cutting the wire at the second bond point;
Forming a ball on the tip of the capillary by discharging to the tip of the wire extending from the tip of the capillary; and
A wire bonding method comprising: 請求項１に記載のワイヤボンディング方法において、
前記ボンディング工程の後、かつ前記移動工程の前において、
前記第２ボンド点での前記ボンディングによって前記ワイヤの基端部から前記第１ボンド点側へ傾斜したワイヤを挿通した状態で、前記キャピラリを鉛直方向に上昇する上昇工程をさらに含み、
前記移動工程は、前記キャピラリの位置を前記第１ボンド点に近づけるように前記キャピラリを水平移動することを特徴とするワイヤボンディング方法。 The wire bonding method according to claim 1,
After the bonding step and before the moving step,
A step of ascending the capillary in the vertical direction while inserting a wire inclined from the base end of the wire to the first bond point side by the bonding at the second bond point;
The wire bonding method characterized in that in the moving step, the capillary is horizontally moved so that the position of the capillary approaches the first bond point. 請求項２に記載のワイヤボンディング方法において、
前記上昇工程は、前記キャピラリをワイヤの基端部の直径以上の距離を上昇し、
前記移動工程は、前記キャピラリの位置を前記第１ボンド点に近づけるように前記キャピラリを前記キャピラリの先端部の孔径以下の距離を水平移動する
ことを特徴とするワイヤボンディング方法。 The wire bonding method according to claim 2,
The raising step raises the capillary by a distance equal to or larger than the diameter of the proximal end of the wire,
The wire bonding method characterized in that, in the moving step, the capillary is horizontally moved by a distance equal to or smaller than the diameter of the tip of the capillary so that the position of the capillary is brought close to the first bond point. 請求項１乃至３いずれかに記載のワイヤボンディング方法において、
前記切断工程後の前記ワイヤの先端部と前記キャピラリの中心軸との距離は、ワイヤの基端部の半径以下であることを特徴とするワイヤボンディング方法。 The wire bonding method according to any one of claims 1 to 3,
The wire bonding method characterized in that the distance between the distal end portion of the wire after the cutting step and the central axis of the capillary is equal to or less than the radius of the proximal end portion of the wire.
JP2007308362A 2007-11-29 2007-11-29 Wire bonding method Pending JP2009135168A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007308362A JP2009135168A (en) 2007-11-29 2007-11-29 Wire bonding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007308362A JP2009135168A (en) 2007-11-29 2007-11-29 Wire bonding method

Publications (1)

Publication Number Publication Date
JP2009135168A true JP2009135168A (en) 2009-06-18

Family

ID=40866818

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007308362A Pending JP2009135168A (en) 2007-11-29 2007-11-29 Wire bonding method

Country Status (1)

Country Link
JP (1) JP2009135168A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2723277B2 (en) * 1989-01-30 1998-03-09 株式会社東芝 Wire bonding method
JPH10199914A (en) * 1997-01-07 1998-07-31 Kaijo Corp Wire-bonding method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2723277B2 (en) * 1989-01-30 1998-03-09 株式会社東芝 Wire bonding method
JPH10199914A (en) * 1997-01-07 1998-07-31 Kaijo Corp Wire-bonding method

Similar Documents

Publication Publication Date Title
JP4298665B2 (en) Wire bonding method
US20080054052A1 (en) Method of manufacturing semiconductor device
JP5263042B2 (en) Semiconductor device, wire bonding method, and wire bonding apparatus
WO2015125671A1 (en) Method for producing semiconductor device, and wire-bonding device
JP4227142B2 (en) Capillaries for wire bonding equipment
WO2011040543A1 (en) Bonding capillary
JP2009135168A (en) Wire bonding method
JP4369401B2 (en) Wire bonding method
JP3455126B2 (en) Wire bonding method
JP7161252B2 (en) Semiconductor device, method for manufacturing semiconductor device, and wire bonding apparatus
US6155474A (en) Fine pitch bonding technique
JP7370055B2 (en) Semiconductor device manufacturing method and wire bonding device
KR101974844B1 (en) Bonding capillary
JP6437668B2 (en) Semiconductor device and manufacturing method thereof
JP7426954B2 (en) Semiconductor device and semiconductor device manufacturing method
US20230282613A1 (en) Manufacturing method of semiconductor device and wire bonding apparatus
KR20060102495A (en) Method for producing a wire connection
TWI827950B (en) Wire bonding apparatus and method for manufacturing semiconductor device
JP2005116603A (en) Method for manufacturing semiconductor device
TWI775430B (en) Manufacturing method of semiconductor device and wire bonding apparatus
JP5338759B2 (en) Wire bonding method
JP2004179214A (en) Cutting method of bonding wire and bonding capillary
JP2009054950A (en) Bump forming method
JP2022114619A (en) Wire bonding apparatus and method of manufacturing semiconductor device
JP5359977B2 (en) Wire bonding method

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20100805

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120125

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120131

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20120605