JPS62216347A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS62216347A JPS62216347A JP61059761A JP5976186A JPS62216347A JP S62216347 A JPS62216347 A JP S62216347A JP 61059761 A JP61059761 A JP 61059761A JP 5976186 A JP5976186 A JP 5976186A JP S62216347 A JPS62216347 A JP S62216347A
- Authority
- JP
- Japan
- Prior art keywords
- ball
- bonding
- wirings
- bump electrode
- bump
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 5
- 239000002184 metal Substances 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 abstract description 8
- 230000008569 process Effects 0.000 abstract description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 2
- 239000001257 hydrogen Substances 0.000 abstract description 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 1
- 229910018885 Pt—Au Inorganic materials 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
- H01L2224/1133—Manufacturing methods by local deposition of the material of the bump connector in solid form
- H01L2224/1134—Stud bumping, i.e. using a wire-bonding apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/13124—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13144—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13147—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
Abstract
Description
【発明の詳細な説明】
〔概 要〕
本発明は、バンプ電極構造を有する半導体装置において
、従来の全厚メッキ等の複雑な製造工程を解消するため
、基板上の電極層上にボンディングによりメタルボール
を圧着してなるバンプ電極構造を提供するものである。[Detailed Description of the Invention] [Summary] The present invention provides a semiconductor device having a bump electrode structure in which metal is bonded onto an electrode layer on a substrate in order to eliminate complicated manufacturing processes such as conventional full-thickness plating. The present invention provides a bump electrode structure formed by crimping balls.
本発明はバンプ電極ビ有する半導体装置の改良に関する
。The present invention relates to improvements in semiconductor devices having bump electrodes.
バンプ電極は、高密度実装可能なフリップチップ型半導
体装置の接続電極として使用されるものである。Bump electrodes are used as connection electrodes for flip-chip semiconductor devices that can be mounted at high density.
従来、バンプ電極形成のためには、基板上のＭ電極上に
Ｔｉ −Ｐｔ−Ａｕ層のようなバリアメタル層を介して
Ａｕの厚メツキビ選択的に行うことで、厚さ約２０μｍ
位のＡｕバンプな形成する複雑な工程が採られている。Conventionally, in order to form a bump electrode, a thickness of approximately 20 μm was formed by selectively depositing Au on the M electrode on the substrate through a barrier metal layer such as a Ti-Pt-Au layer.
A complicated process is adopted to form the Au bumps.
本発明は、従来技術におけるバンプ電極形成の複雑な工
程！−掃し、低コストで製造可能なバンプ構造を提供す
ることを目的とする。The present invention eliminates the complicated process of forming bump electrodes in the prior art! - The purpose is to provide a bump structure that can be easily manufactured at low cost.
本発明では、基板上の電極層上にボンディングにより圧
着されたメタルボールから成るバンプ電極を設けるよう
にしたものである。In the present invention, a bump electrode made of a metal ball crimped by bonding is provided on an electrode layer on a substrate.
メタルボールのボンディング圧着は、周知の熱圧着ワイ
ヤボンダによるボールボンディングを用いれば、通常の
ボンディングと同等の簡便な工程で実施できるので、製
造コストの上昇なしに、高密度実装に適したバンプ構造
を得ることができる。Metal ball bonding can be carried out using a well-known thermocompression wire bonder using a simple process similar to that of normal bonding, so a bump structure suitable for high-density mounting can be obtained without increasing manufacturing costs. be able to.
第１図は本発明実施例の構造断面を示す。同図にて、１
は基板、２は絶縁膜、３はカバー絶縁膜。FIG. 1 shows a structural cross section of an embodiment of the present invention. In the same figure, 1
is a substrate, 2 is an insulating film, and 3 is a cover insulating film.
４はＡｔ電極、５はバンプ電極である。4 is an At electrode, and 5 is a bump electrode.
第２図（ａ）〜（ｃ）は本発明実施例の工程を示す図で
、第１図と同番号は同一部分を示す。また、６はキャピ
ラリ、５１はメタルワイヤ、５２はメタルボールである
。FIGS. 2(a) to 2(c) are diagrams showing the steps of an embodiment of the present invention, and the same numbers as in FIG. 1 indicate the same parts. Further, 6 is a capillary, 51 is a metal wire, and 52 is a metal ball.
本発明実施例では、メタルワイヤ５１としては通常のワ
イヤボンディングで使用されているＡｕ ＋またはＡｔ
、或いはＣｕなどの細線でよい。ボール５２は通常のボ
ールボンダに付属の水素トーチにより作られるものでよ
い。そして、第２図（ｂ）で示す如く、通常のポールボ
ンディングでの１次ボンディングに当るボンディングを
行う。ボールはワイヤボンド時よりは太き目に形成して
おくのがよい。In the embodiment of the present invention, the metal wire 51 is made of Au + or At, which is used in ordinary wire bonding.
, or a thin wire made of Cu or the like. The ball 52 may be made using a hydrogen torch attached to a conventional ball bonder. Then, as shown in FIG. 2(b), bonding, which corresponds to primary bonding in normal pole bonding, is performed. It is better to form the ball thicker than when wire bonding.
メタルボール５２がキャピラリ６により圧接され、電極
層４に熱圧着された後、キャピラリ６を上昇させ、ボン
ダのクランプ手段でワイヤ５１Ｙ保持し上方へ引張るこ
と釦より、第２図（ｃ）に示す如く、ボール５２頂上部
分でワイヤを切断除去でき、後に高さ２０μｍ位のバン
プ電極５が残る。After the metal ball 52 is pressed by the capillary 6 and thermocompression bonded to the electrode layer 4, the capillary 6 is raised, and the wire 51Y is held by the clamping means of the bonder and pulled upward by pressing the button, as shown in FIG. 2(c). As shown, the wire can be cut and removed at the top of the ball 52, leaving behind the bump electrode 5 with a height of about 20 μm.
このようにして、必要な端子数分のバンプ電極形成を繰
返し、完成する。In this way, the formation of bump electrodes for the required number of terminals is repeated until completion.
以上のバンプ電極形成工程は、通常のボールボンダに極
く僅かな調整、改変乞加えれば実施でき、完全自動化を
容易に達成できる。ウニハエ程ではなく、組立工程でバ
ンプ形成を行えるので、−次試験結果に応じ良品チップ
のみにバンプ形成を行えば、コストダウン効果がある。The above bump electrode forming process can be carried out using a normal ball bonder with very slight adjustments and modifications, and can easily be fully automated. Since bumps can be formed in the assembly process rather than in a sea urchin fly, if bumps are formed only on non-defective chips according to the next test results, there is a cost reduction effect.
また、従ＩＲ接着性等も考慮したバリアメタル層介在を
省略してもよいので、この点でも工程簡略化効果がある
。Furthermore, since the barrier metal layer may be omitted in consideration of secondary IR adhesion, there is also an effect of process simplification in this respect.
本発明によれば、バンプ電極を複雑なウェハプロセスな
しに作成でき、コスト低減効果が得られるものである。According to the present invention, bump electrodes can be created without complicated wafer processes, resulting in a cost reduction effect.
第１図は本発明実施例の構造断面図、第２図（ａ）〜（
ｃ）は本発明実施例の製造工程を示す図である。
４・・・・・・ Ａｔ電極膜
５・・・・・ バンプ電極
半切？β目リす′方色例の講名【ぼＩｉｃヨ第１図
オ殆明ｒ施ぜυ工我図FIG. 1 is a structural sectional view of an embodiment of the present invention, and FIG. 2(a) to (
c) is a diagram showing the manufacturing process of an example of the present invention. 4...At electrode film 5...Bump electrode cut in half? Lecture name for example of β-eyes
Claims (1)
着されたメタルボールから成るバンプ電極（５）を有す
ることを特徴とする半導体装置。A semiconductor device characterized by having a bump electrode (5) made of a metal ball crimped by bonding onto an electrode layer (4) on a substrate (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61059761A JPS62216347A (en) | 1986-03-18 | 1986-03-18 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61059761A JPS62216347A (en) | 1986-03-18 | 1986-03-18 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62216347A true JPS62216347A (en) | 1987-09-22 |
Family
ID=13122571
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61059761A Pending JPS62216347A (en) | 1986-03-18 | 1986-03-18 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62216347A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02170931A (en) * | 1988-09-29 | 1990-07-02 | Mitsubishi Metal Corp | Fine gold-alloy wire for gold bump |
| US6541848B2 (en) | 1998-02-25 | 2003-04-01 | Fujitsu Limited | Semiconductor device including stud bumps as external connection terminals |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59208751A (en) * | 1983-05-13 | 1984-11-27 | Hitachi Ltd | Formation of bump |
-
1986
- 1986-03-18 JP JP61059761A patent/JPS62216347A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59208751A (en) * | 1983-05-13 | 1984-11-27 | Hitachi Ltd | Formation of bump |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02170931A (en) * | 1988-09-29 | 1990-07-02 | Mitsubishi Metal Corp | Fine gold-alloy wire for gold bump |
| US6541848B2 (en) | 1998-02-25 | 2003-04-01 | Fujitsu Limited | Semiconductor device including stud bumps as external connection terminals |
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