JP2619523B2 - LD chip carrier fixing structure - Google Patents

LD chip carrier fixing structure

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Publication number
JP2619523B2
JP2619523B2 JP1066024A JP6602489A JP2619523B2 JP 2619523 B2 JP2619523 B2 JP 2619523B2 JP 1066024 A JP1066024 A JP 1066024A JP 6602489 A JP6602489 A JP 6602489A JP 2619523 B2 JP2619523 B2 JP 2619523B2
Authority
JP
Japan
Prior art keywords
chip carrier
ceramic substrate
chip
peltier element
metal member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1066024A
Other languages
Japanese (ja)
Other versions
JPH02247093A (en
Inventor
俊一 佐藤
隆行 益子
省一 三浦
哲史 桧垣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP1066024A priority Critical patent/JP2619523B2/en
Publication of JPH02247093A publication Critical patent/JPH02247093A/en
Application granted granted Critical
Publication of JP2619523B2 publication Critical patent/JP2619523B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Semiconductor Lasers (AREA)
  • Laser Beam Processing (AREA)

Description

【発明の詳細な説明】 〔概 要〕 LDチップキャリア固定構造に関し、 ペルチェ素子のセラミック基板上に金属部材を埋め込
み、これを介在させることによりLDチップキャリアとペ
ルチェ素子とのレーザ溶接による簡易であり且つ確実な
固定を可能にすると共に、両者の密着性をより向上させ
得るLDチップキャリア固定構造を提供することを目的と
し、 LDチップを搭載した金属材で成るLDチップキャリアと
ペルチェ素子のセラミック基板とを固定する構造におい
て、LDチップキャリアとセラミック基板との接触面に近
接するセラミック基板上の領域に金属部材を埋め込み且
つLDチップキャリアと金属部材との間に所定の間隙を設
け、LDチップキャリア及び金属部材にまたがってレーザ
照射を行うことによりこれらを溶着させ、以てLDチップ
キャリアとペルチェ素子のセラミック基板とを密着固定
するように構成する。
DETAILED DESCRIPTION OF THE INVENTION [Summary] Regarding an LD chip carrier fixing structure, a metal member is embedded on a ceramic substrate of a Peltier device, and the metal member is interposed therebetween, so that the LD chip carrier and the Peltier device can be easily laser-welded. An LD chip carrier made of a metal material on which an LD chip is mounted and a ceramic substrate of a Peltier element with the object of providing an LD chip carrier fixing structure that enables secure fixing and further improves the adhesion between the two. In the structure for fixing the LD chip carrier, a metal member is embedded in a region on the ceramic substrate close to a contact surface between the LD chip carrier and the ceramic substrate and a predetermined gap is provided between the LD chip carrier and the metal member. And by irradiating the laser over the metal member to weld them, A ceramic substrate of the Peltier element configured to closely fixed.

〔産業上の利用分野〕[Industrial applications]

本発明は、LDチップを搭載した金属材で成るLDチップ
キャリアをペルチェ素子の絶縁用のセラミック基板に固
定する構造に関する。
The present invention relates to a structure for fixing an LD chip carrier made of a metal material on which an LD chip is mounted to an insulating ceramic substrate of a Peltier device.

〔従来の技術〕[Conventional technology]

光通信用の発光側のレーザ・ダイオード(以下、LD)
モジュールにおいては、安定した性能を確保する等のた
めLDチップの適正な温度管理を行っている(例えば、温
度が変化すると発振波長が変化する)。これは例えば第
3図に示す如く、LDチップ(図示せず)を搭載する金属
材で成るLDチップキャリア51をペルチェ素子52の絶縁用
セラミック基板52aに密着固定し、このペルチェ素子52
によりLDチップの温度制御を行っている。LDチップキャ
リア51とセラミック基板52aとの固定は熱伝達性(主と
して冷却特性)及び取付け強度の面からセラミック基板
52aの取付け上面をメタライズ(Au)53した後、この上
にLDチップキャリア51を全面的に密着させて半田54にて
取付け固定している。
Laser diode (hereinafter, LD) on the light emitting side for optical communication
In the module, proper temperature control of the LD chip is performed to ensure stable performance and the like (for example, the oscillation wavelength changes when the temperature changes). For example, as shown in FIG. 3, an LD chip carrier 51 made of a metal material on which an LD chip (not shown) is mounted is closely fixed to an insulating ceramic substrate 52a of a Peltier element 52.
Control the temperature of the LD chip. The fixing between the LD chip carrier 51 and the ceramic substrate 52a is performed in consideration of heat transfer (mainly cooling characteristics) and mounting strength.
After metallizing (Au) 53 the mounting upper surface of the 52a, the LD chip carrier 51 is entirely adhered thereon, and is mounted and fixed with solder.

〔発明が解決しようとする課題〕[Problems to be solved by the invention]

しかるに、従来の半田付けによる固定方法ではその半
田付けの信頼性向上等のため不活性ガス雰囲気内で作業
を行わなければならず、また、半田54のクリープ現象に
よりLDチップキャリア51の所望の取付け精度を維持しに
くいという不都合がある。このため、不活性ガス雰囲気
内での作業が不要であり取付け強度上優れたレーザ溶接
によりLDチップキャリア51を固定することができれば望
ましい。しかしながら、セラミック材料はレーザ溶接で
きないため、セラミック基板52aは勿論のこと、これを
メタライズしたとしても、このセラミック基板52aとLD
チップキャリア51とを直接レーザ溶接することは実際上
できない。
However, in the conventional fixing method by soldering, work must be performed in an inert gas atmosphere in order to improve the reliability of the soldering, and the desired mounting of the LD chip carrier 51 due to the creep phenomenon of the solder 54. There is a disadvantage that it is difficult to maintain accuracy. For this reason, it is desirable that work in an inert gas atmosphere is unnecessary and that the LD chip carrier 51 can be fixed by laser welding having excellent mounting strength. However, since the ceramic material cannot be laser-welded, not only the ceramic substrate 52a but also the metallized ceramic substrate 52a and the LD
It is practically impossible to directly perform laser welding with the chip carrier 51.

また、LDチップキャリアとペルチェ素子との間に透き
間があると、その断熱空間によりペルチェ素子によるLD
チップの冷却(加熱)効率が低下するため、LDチップキ
ャリアとセラミック基板(ペルチェ素子)とは密着させ
ることが望まれる。
In addition, if there is a gap between the LD chip carrier and the Peltier element, the heat insulating space causes the LD by the Peltier element.
Since the cooling (heating) efficiency of the chip is reduced, it is desired that the LD chip carrier and the ceramic substrate (Peltier element) be in close contact with each other.

以上の点に鑑み本発明においては、セラミック基板上
に金属部材を埋め込み、これを介在させることによりLD
チップキャリアとセラミック基板とのレーザ溶接を可能
にすると共に、両者の密着性をより向上させ得るLDチッ
プキャリア固定構造を提供することを目的とする。
In view of the above, in the present invention, a metal member is embedded on a ceramic substrate,
It is an object of the present invention to provide an LD chip carrier fixing structure that enables laser welding between a chip carrier and a ceramic substrate and further improves the adhesion between the two.

〔課題を解決するための手段〕[Means for solving the problem]

上記目的を解決するために本発明に係るLDチップキャ
リア固定構造によれば、LDチップを搭載した金属材で成
るLDチップキャリアとペルチェ素子のセラミック基板と
を固定する構造において、LDチップキャリアとセラミッ
ク基板との接触面に近接するセラミック基板上の領域に
金属部材を埋め込み且つLDチップキャリアと金属部材と
の間に所定の間隙を設け、LDチップキャリア及び金属部
材にまたがってレーザ照射を行うことによりこれらを溶
着させ、以てLDチップキャリアとペルチェ素子のセラミ
ック基板とを密着固定することを構成上の特徴とする。
According to an LD chip carrier fixing structure according to the present invention for solving the above object, according to a structure for fixing an LD chip carrier made of a metal material on which an LD chip is mounted and a ceramic substrate of a Peltier element, the LD chip carrier and the ceramic are fixed. By embedding a metal member in a region on the ceramic substrate close to the contact surface with the substrate and providing a predetermined gap between the LD chip carrier and the metal member, and performing laser irradiation across the LD chip carrier and the metal member. These are welded, and the LD chip carrier and the ceramic substrate of the Peltier element are adhered and fixed to each other by a structural feature.

〔作 用〕(Operation)

ペルチェ素子とセラミック基板上に埋め込んだ金属部
材とLDチップキャリアとがレーザ照射されて溶着する。
これによりLDチップキャリアとペルチェ素子とが確実に
固定される。しかも、金属部材及びLDチップキャリア間
に所定の間隙があるため、溶着後にこの部分に凝縮力に
よる密着力が作用して両部材間の密着性が向上する。
The Peltier element, the metal member embedded on the ceramic substrate, and the LD chip carrier are welded by laser irradiation.
Thereby, the LD chip carrier and the Peltier element are securely fixed. In addition, since there is a predetermined gap between the metal member and the LD chip carrier, an adhesion force due to a condensing force acts on this portion after welding, and the adhesion between the two members is improved.

〔実施例〕〔Example〕

以下、図示実施例に基づき本発明を説明する。 Hereinafter, the present invention will be described based on illustrated embodiments.

第1及び2図は本発明の一実施例を示し、1は図示し
ないLDチップを搭載するステンレス鋼製のLDチップキャ
リア、2はペルチェ素子である。一般にペルチェ素子
は、2種類の導体を互いに両端で接続して電流を流した
ときに起きる吸熱・発熱現象を利用して小容量のものを
主として冷却することに用いられる。2aはペルチェ素子
2絶縁用のセラミック基板である。
1 and 2 show an embodiment of the present invention, wherein 1 is a LD chip carrier made of stainless steel on which an LD chip (not shown) is mounted, and 2 is a Peltier element. Generally, a Peltier element is used to mainly cool a small-capacity element by utilizing an endothermic / heat-generating phenomenon that occurs when two types of conductors are connected to each other at both ends and an electric current flows. 2a is a ceramic substrate for Peltier element 2 insulation.

前述の如く、LDチップキャリア1とセラミック基板2a
とを直接レーザ溶接して固定することは困難であるの
で、先ずセラミック基板2aに低熱伝導性金属、例えばス
テンレス鋼を焼結等の方法により埋め込み(この場合、
上方に抜けにくいように例えば図示の如く逆T字状に埋
め込む)、さらにこの埋め込み部材5の上面とLDチップ
キャリア1及びセラミック基板2aの接触面Sとの間に段
差H(0〜50μm程度)を設ける。そして、LDチップキ
ャリア1及び埋め込み部材5にまたがってレーザ照射を
行う。これにより、両部材1,5のレーザ照射部が溶けて
一体化し、LDチップキャリア1を埋め込み部材5ひいて
はペルチェ素子2のセラミック基板2aに固定することが
できる。すなわち、レーザ溶接が可能となり上記従来の
半田付け作業に伴う不都合を一掃できる。しかも段差H
を設けてあるので、レーザ溶接部(照射部)Aにおいて
溶着後の凝固収縮により両部材1,5間に引張力が内在す
ることになり、LDチップキャリア1及びセラミック基板
2aの接触面Sにおける密着力が高まる結果、段差を設け
ずに単に固定するものと比較してペルチェ素子2による
LDチップ(図示せず)の冷却(あるいは加熱)効率を維
持・向上させることが可能となる。
As described above, the LD chip carrier 1 and the ceramic substrate 2a
Since it is difficult to directly fix by welding with a laser, a low heat conductive metal, for example, stainless steel is first embedded in the ceramic substrate 2a by a method such as sintering (in this case,
(Embedded in, for example, an inverted T-shape as shown in the figure so that it is difficult to come out upward). Is provided. Then, laser irradiation is performed over the LD chip carrier 1 and the embedded member 5. As a result, the laser irradiation portions of both members 1 and 5 are melted and integrated, and the LD chip carrier 1 can be fixed to the embedded member 5 and thus to the ceramic substrate 2a of the Peltier element 2. That is, laser welding can be performed, and the disadvantages associated with the conventional soldering operation can be eliminated. Moreover, the step H
Is provided, a tensile force is inherent between the two members 1 and 5 due to solidification shrinkage after welding at the laser welded portion (irradiated portion) A, and the LD chip carrier 1 and the ceramic substrate
As a result of the increase in the contact force of the contact surface 2a at the contact surface S, the Peltier element 2
It is possible to maintain and improve the cooling (or heating) efficiency of the LD chip (not shown).

尚、レーザ溶接部Aは図示の如く不連続でもあるいは
連続的に線に沿って行ってもよい。
The laser welding portion A may be discontinuous as shown in the drawing or may be continuously formed along a line.

〔発明の効果〕〔The invention's effect〕

以上の如く本発明によれば、半田付けに伴う上記従来技
術の不都合を一掃でき、レーザ溶接により手軽に且つ確
実にLDチップキャリアをペルチェ素子に固定することが
でき、また両者の密着性向上による冷却(加熱)効率の
維持・向上が図れる。
As described above, according to the present invention, it is possible to eliminate the disadvantages of the above-described prior art associated with soldering, to easily and reliably fix the LD chip carrier to the Peltier element by laser welding, and to improve the adhesion between the two. The cooling (heating) efficiency can be maintained and improved.

【図面の簡単な説明】[Brief description of the drawings]

第1図は本発明に係るLDチップキャリア固定構造の一実
施例の斜視図、 第2図は第1図に示す実施例の正面図、 第3図は従来のLDチップキャリア固定構造の正面図であ
る。 1……LDチップキャリア、2……ペルチェ素子、 2a……セラミック基板、5……埋め込み部材、 A……レーザ溶接部、H……段差、 S……接触面。
1 is a perspective view of one embodiment of an LD chip carrier fixing structure according to the present invention, FIG. 2 is a front view of the embodiment shown in FIG. 1, and FIG. 3 is a front view of a conventional LD chip carrier fixing structure. It is. 1 ... LD chip carrier, 2 ... Peltier element, 2a ... Ceramic substrate, 5 ... Embedded member, A ... Laser welded part, H ... Step, S ... Contact surface.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 桧垣 哲史 神奈川県川崎市中原区上小田中1015番地 富士通株式会社内 (56)参考文献 特開 昭62−137174(JP,A) 実開 平2−81756(JP,U) ────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Tetsushi Higaki 1015 Uedanaka, Nakahara-ku, Kawasaki City, Kanagawa Prefecture Inside Fujitsu Limited (56) References JP-A-62-137174 (JP, A) (JP, U)

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】LDチップを搭載した金属材で成るLDチップ
キャリア(1)とペルチェ素子(2)のセラミック基板
(2a)とを固定する構造において、LDチップキャリア
(1)とセラミック基板(2a)との接触面(S)に近接
するセラミック基板(2a)上の領域に金属部材(5)を
埋め込み且つLDチップキャリア(1)と金属部材(5)
との間に所定の間隙(H)を設け、LDチップキャリア
(1)及び金属部材(5)にまたがってレーザ照射を行
うことによりこれらを溶着させ、以てLDチップキャリア
(1)とペルチェ素子(2)のセラミック基板(2a)と
を密着固定することを特徴とするLDチップキャリア固定
構造。
In a structure for fixing an LD chip carrier (1) made of a metal material on which an LD chip is mounted and a ceramic substrate (2a) of a Peltier element (2), the LD chip carrier (1) and the ceramic substrate (2a) are fixed. The metal member (5) is embedded in the region on the ceramic substrate (2a) close to the contact surface (S) with the LD chip carrier (1) and the metal member (5).
A predetermined gap (H) is provided between the LD chip carrier (1) and the metal member (5), and these are welded by irradiating a laser beam over the LD chip carrier (1) and the metal member (5). An LD chip carrier fixing structure, wherein the LD chip carrier is fixed to the ceramic substrate (2a) in (2).
JP1066024A 1989-03-20 1989-03-20 LD chip carrier fixing structure Expired - Lifetime JP2619523B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1066024A JP2619523B2 (en) 1989-03-20 1989-03-20 LD chip carrier fixing structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1066024A JP2619523B2 (en) 1989-03-20 1989-03-20 LD chip carrier fixing structure

Publications (2)

Publication Number Publication Date
JPH02247093A JPH02247093A (en) 1990-10-02
JP2619523B2 true JP2619523B2 (en) 1997-06-11

Family

ID=13303939

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1066024A Expired - Lifetime JP2619523B2 (en) 1989-03-20 1989-03-20 LD chip carrier fixing structure

Country Status (1)

Country Link
JP (1) JP2619523B2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3076246B2 (en) * 1996-08-13 2000-08-14 日本電気株式会社 Semiconductor laser module with built-in Peltier cooler
JP3909755B2 (en) * 2002-04-22 2007-04-25 Obara株式会社 Cooling method for resistance welding equipment
JP2005114298A (en) * 2003-10-10 2005-04-28 Citizen Watch Co Ltd Temperature adjusting device
KR100638613B1 (en) * 2004-09-02 2006-10-26 삼성전기주식회사 Wafer level package fabrication method using laser illumination

Also Published As

Publication number Publication date
JPH02247093A (en) 1990-10-02

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