JP2601831B2 - Wet processing equipment - Google Patents

Description

Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wet processing technique, and more particularly to a technique effective when applied to a wet processing technique including a developing process, an etching process, and a stripping process of a resist film. Things.

[Conventional technology]

An active matrix type liquid crystal display device is known. In a liquid crystal display device, liquid crystal is sealed in a space (gap) formed between two upper and lower transparent glass substrates.

The liquid crystal corresponding to each pixel displaying an image is controlled by a transparent pixel electrode (ITO) arranged for each pixel and a common transparent pixel electrode (ITO) arranged commonly for each pixel. I have. The potential of the transparent pixel electrode arranged for each pixel is controlled by a thin film transistor, so-called TFT.

Each of the transparent pixel electrode and the thin film transistor is formed on a surface (liquid crystal side) of a lower transparent glass substrate.
The thin film transistor is formed by sequentially laminating a gate electrode, a gate insulating film, an i-type semiconductor layer, a source electrode, and a drain electrode on a surface of a transparent glass substrate. A scanning signal line (gate line) for selecting a thin film transistor is formed integrally with a gate electrode. The video signal line (drain line) is formed integrally with the drain electrode. The transparent pixel electrode is connected to a source electrode of the thin film transistor. The common transparent pixel electrode is formed on the surface (liquid crystal side) of the upper transparent glass substrate.

A wet processing technique (wet process) is used for pattern formation of each layer constituting a thin film transistor, a transparent pixel electrode, a common transparent pixel electrode, and the like of the liquid crystal display device. Wet processing technology mainly consists of development processing,
It is a general term for a series of processes of etching (wet etching) and stripping.

The development process is a process of forming a latent image of a pattern on a photoresist film applied on the layer, and then developing the photoresist film to form an etching mask. The etching process is a process of performing wet etching using the etching mask to form the layer in a predetermined pattern. The stripping process is a process of stripping and removing the etching mask.

[Problems to be solved by the invention]

Each of the developing process, the etching process, and the peeling process of the wet processing technique is performed by a so-called batch processing method. The batch processing method is a method in which a plurality of transparent glass substrates having a photoresist film coated on the above layer are stored in a substrate cassette, and each processing is performed in this state. In the substrate cassette, a transparent glass substrate is stored in an upright state so that the surface to be processed (the liquid crystal side surface) coated with the photoresist film is vertical.

The development process is completed by developing the photoresist film with a developing solution, repeating washing with water several times, drying with a rinser drier, and post-baking (hardening the photoresist film). This development process is performed by an operator carrying the substrate cassette and manually immersing (dipping) the substrate cassette in each processing liquid. The development process is performed by the operator based on a schedule listing the processing order and processing time. The etching process and the stripping process performed after the development process are performed by the same method as the development process.

According to the study of the present inventor, it has been confirmed that this type of wet processing technique performs each processing based on the judgment of the operator, so that each processing is slightly different, and stable wet processing is not performed. Was done. For example, an etching mask could not be surely formed in the developing process, and a defect caused by over-etching or insufficient etching in the etching process occurred frequently. As a result, the production yield of the liquid crystal display device decreases.

According to the study of the present inventor, in the above-described wet processing technology, the processing of the next stage is often stagnant, and it is not possible to smoothly perform each processing in order. That is, in the above-described wet processing technique, the stagnation time (waiting time) from the end of the development processing to the start of the etching processing or from the end of the etching processing to the start of the stripping processing becomes long. As a result, the time required for the manufacturing process of the liquid crystal display device becomes longer, and the time until the product is completed becomes longer. The current liquid crystal display device requires about 30 days to complete the product.

In order to solve such a problem, the present inventor has studied an integrated automatic line system for wet processing. This integrated automation line system employs the above-described batch processing method, and is configured to automatically immerse a substrate cassette containing a plurality of transparent glass substrates sequentially in each processing liquid.

However, since the surface to be processed of the transparent glass substrate housed in the substrate cassette is blocked by another transparent glass substrate, unevenness occurs in each of the developing process, the etching process, and the peeling process. In particular, since spray cleaning cannot be performed from both sides, ionic contaminants and foreign substances are carried into the next processing tank, and many processing tanks are required for removing dirt. Also,
In the drying process performed at the final stage of each process, radiant heat cannot be used, so that the surface to be processed of the transparent glass substrate cannot be sufficiently dried. That is, it is difficult to realize an integrated automation line system.

Therefore, the present inventor has proposed an integrated automation line system,
Consideration has been given to adopting a so-called single-wafer method in which transparent glass substrates are processed one by one. This integrated automated line system is configured to sandwich transparent glass substrates one by one with a collet, for example, and immerse them in a processing liquid. The transparent glass substrate is conveyed in a horizontal direction with the surface to be processed facing upward by a belt conveyor, and is immersed in the processing liquid by spraying or showering with the surface to be processed facing upward.

However, the area occupied by the transfer of each processing liquid tank and the transparent glass substrate increases, so that the wet processing apparatus forming the integrated automated line system becomes large.
The integrated automated line system designed by the inventor reached a total length of about 70 [m]. That is, it is difficult to realize an integrated automation line system.

Furthermore, according to the study of the present inventor, an important problem when configuring an integrated automation line system is to reliably control each wet processing while sequentially performing each wet processing on a transparent glass substrate. For example, in the etching process, after the etching process of the layer formed on the surface to be processed of the transparent glass substrate is completed, the transparent glass substrate is pulled up from the etching processing tank, and from this time until the etching solution attached in the above process is washed. This is to ensure time control. That is, it defines the end point of the etching process.

However, the control of the time varies depending on the material of the layer to be etched, so that it is very difficult to standardize the time. If the time is long, the etching proceeds because the etching liquid is attached to the surface to be processed of the transparent glass substrate, resulting in over-etching. If the time is short, the etching will be insufficient. The non-uniformity of the etching time is as follows:
Failure occurs frequently, and the production yield of the liquid crystal display device is reduced.

An object of the present invention is to provide a technique capable of configuring an integrated automatic line system for wet processing in the wet processing technique.

Another object of the present invention is to provide a technique capable of configuring an integrated automatic line system for wet processing including development processing, etching processing, and stripping processing in wet processing technology.

Another object of the present invention is to provide a technique capable of performing stable wet processing and reducing the area occupied by the wet processing in the wet processing technique.

Another object of the present invention is to provide a technique capable of realizing the mass production of the wet processing and reducing the size of the wet processing apparatus in the wet processing technique.

The above and other objects and novel features of the present invention are as follows.
It will become apparent from the description of the present specification and the accompanying drawings.

[Means for solving the problem]

The outline of a typical invention disclosed in the present application is briefly described as follows.

In other words, the first wet processing apparatus includes a first wet processing apparatus and a second wet processing apparatus that sequentially perform wet processing on substrates transported one by one, the first wet processing apparatus being sequentially stacked from the ground surface side. The apparatus is configured to be filled with a wet processing liquid for immersing the substrate that is lowered through the inside of the second wet processing apparatus, and the second wet processing apparatus is configured to apply a cleaning liquid to the substrate raised from the first wet processing apparatus. Is sprayed in a shower shape, and at a boundary portion between the first wet processing apparatus and the second wet processing apparatus, the cleaning liquid drops into the first wet processing apparatus when the cleaning liquid is sprayed. The substrate is further provided with a shutter portion for preventing the lowering of the substrate, with the vertical direction with respect to the front and rear surfaces thereof being matched with a direction substantially orthogonal to the direction of gravity. With pre-increase is made, the cleaning liquid sprayed in shower form is characterized in that it is configured to blow from each surface side of the front and back surfaces of the substrate.

[Action]

According to the wet processing apparatus thus configured, the substrate passes through the second wet processing apparatus, reaches the first wet processing apparatus, and returns to the second wet processing apparatus in the wet processing apparatus. Said that
The mechanism required for transporting the substrate can be simplified simply by vertical movement, and the apparatus itself can be reduced in size.

Further, since the single substrate returned from the first wet processing apparatus to the second wet processing apparatus is cleaned as it is by the cleaning liquid ejected in a spray form, the cleaning liquid is Other than providing a shower part to prevent it from falling into the first wet processing device,
In particular, the configuration does not require a large-scale device. Therefore, the size of the apparatus itself can be further reduced.

Further, the substrate is configured to be cleaned by a cleaning liquid ejected in a spray form from each side of the main surface, in combination with the configuration in which the substrate is wet-processed one by one. Therefore, each surface can be sufficiently cleaned.

Hereinafter, the configuration of the present invention will be described together with an embodiment in which the present invention is applied to a wet processing technique used in an active matrix type liquid crystal display device.

In all the drawings for describing the embodiments, components having the same function are denoted by the same reference numerals, and their repeated description will be omitted.

〔Example〕

(Embodiment I) FIG. 2 (schematic diagram) schematically shows a wet processing apparatus provided with an integrated automatic line system for wet processing which is Embodiment I of the present invention.

As shown in FIG. 2, the wet processing apparatus is mainly composed of an integrated automation line system including a developing section, an etching section (wet etching section), and a stripping section.

The development processing unit is configured to develop the photoresist film applied to the liquid crystal side surface (processing surface) of the transparent glass substrate (processing substrate) SUB to form an etching mask. Transparent glass substrate SUB conveyed to the development processing section
The photoresist film applied to the surface is in a state where a latent image is formed. The application of the photoresist film is performed by, for example, a spinner.

The development processing unit is configured to automatically perform wet processing sequentially from the left side in the drawing in each wet processing tank disposed between the loader (supply stocker) 1 and the unloader (storage stocker) 10. . A plurality of wet processing tanks are arranged in the transport direction of the transparent glass substrate SUB. The transport of the transparent glass substrate SUB is performed in a single-wafer manner.

The transparent glass substrate SUB supplied from the loader 1 is
First, it is transported to the preliminary tank 2 and the surface of the transparent glass substrate SUB is cleaned.

Next, the photoresist film transported to the first developing tank 3 or the second developing tank 4 and applied to the surface of the transparent glass substrate SUB is developed (dissolved) to form an etching mask. First
The developing tank 3 contains, for example, an organic alkali (tetramethylammonium hydroxide 2.4 [%]) or the like as a developing solution (wet processing solution). The second developing tank 4 contains, for example, an inorganic alkali (potassium hydroxide 6 [%]) or the like as a developing solution.

Next, the developing solution that has been sequentially transported to the first washing tank 5, the second washing tank 6, and the third washing tank 7 and adhered to the surface of the transparent glass substrate SUB is washed.

Next, it is conveyed to the hot water drying tank 8 and is heated to about 80 [° C.]
After being heated and cleaned, hot air 8a is blown in the shape of an air knife to dry the surface of the transparent glass substrate SUB. As the hot air 8a, for example, hot air of nitrogen gas is used so that a water mark (water spot) is not formed on the surface of the transparent glass substrate SUB.

Next, it is transported to the baking furnace 9 and subjected to post baking. Post baking is performed, for example, at a temperature of about 120 ° C. for 4 hours.
Perform for about [minutes]. Post baking is performed to harden the etching mask (photoresist film) and improve the film strength for the subsequent etching process.

 After that, it is stored in the unloader 10.

The etching unit (wet etching unit)
Using an etching mask formed of the photoresist film, the layer formed on the surface of the transparent glass substrate SUB is formed in a predetermined pattern. The etching unit is configured to automatically perform wet processing sequentially from the left side in the drawing in each wet processing tank disposed between the loader 10 and the unloader 19. A plurality of wet processing tanks are arranged in the transport direction of the transparent glass substrate SUB, similarly to the development processing section. The transport of the transparent glass substrate SUB is also performed in a single-wafer manner.

The transparent glass substrate supplied from the loader 10 is first conveyed to the preliminary tank 11, and the surface of the transparent glass substrate is cleaned. The loader 10 is configured to supply the transparent glass substrate SUB that has been subjected to wet processing (development processing) in the development processing section. This preliminary tank 11 activates the surface of the material of the layer forming the pattern (in the present embodiment, the material of the layer forming the pattern is a chromium layer, an aluminum layer, and a transparent electrode layer), and uniformly starts the etching in the etching tank. The preliminary tank 11 contains, for example, diluted hydrochloric acid as a wet treatment liquid.

Next, it is transported to the washing tank 12, and the surface of the transparent glass substrate SUB is washed.

Next, the layer is transported to the etching tank 13 and the layer on the surface of the transparent glass substrate is formed in a predetermined pattern using an etching mask formed of the photoresist film. This etching bath 13 is provided for each material of a layer forming a pattern.
There are multiple tanks. Since the wet processing apparatus of this embodiment uses three types of materials as described above, the etching tank 13A for chromium and the etching tank 1 for aluminum are used.
3B and an etching tank 13C for a transparent electrode. The etching bath 13A contains, for example, ceric ammonium nitrate as an etching solution (wet processing solution). The etching bath 13B contains, for example, H ₃ PO ₄ + HNO ₃ + CH ₃ COOH as an etching solution. Etching tank 13C
Contains, for example, HNO ₃ + HCl as an etchant.

Next, the etchant that has been transported to the washing tank 14 and adhered to the surface of the transparent glass substrate SUB is washed. Although not shown, the washing tank 14 is provided with three types of washing tanks for each of the etching tanks 13A, 13B, and 13C.

Next, it is sequentially transported to the first hot pure water tank 15, the second hot pure water tank 16, and the third hot pure water tank 17, and cleans the surface of the transparent glass substrate SUB.

Next, after being conveyed to the hot water drying tank 18 and washed with hot pure water, hot air 18a is blown to dry the surface of the transparent glass substrate. As the hot air 18a, similarly to the hot air 8a, for example, hot air of nitrogen gas is used so that a water mark is not formed on the surface of the transparent glass substrate SUB.

 Next, it is stored in the unloader 19.

The stripping unit is configured to strip and remove the etching mask from the surface of the transparent glass substrate SUB.
The stripping section is configured to automatically perform wet processing sequentially from the left side in the drawing in each wet processing tank disposed between the loader 19 and the unloader 32. A plurality of wet processing tanks are arranged in the transport direction of the transparent glass substrate SUB similarly to the development processing section and the etching processing section, respectively. The transport of the transparent glass substrate SUB is also performed in a single-wafer manner.

The transparent glass substrate SUB supplied from the loader 19 is
First, it is transported to the baking furnace 20 and subjected to baking.
The baking is performed, for example, at a temperature of about 120 ° C. for about 4 minutes.

Next, it is sequentially transported to the first peeling tank 21 and the second peeling tank 22,
The etching mask formed on the surface of the transparent glass substrate SUB is peeled (dissolved). 1st peeling tank 21, 2nd peeling tank
22 contains, for example, a mixed solvent system (such as orthodichlorobenzene) as a stripping liquid (wet processing liquid).

Next, the stripping solution that has been sequentially transported to the first stripping solution removing tank 23, the second stripping solution removing tank 24, the third stripping solution removing tank 25, and the fourth stripping solution removing tank 26, and has adhered to the surface of the transparent glass substrate SUB. Dissolve. Each of the stripping solution removing tanks 23, 24, 25, 26 contains, for example, methylene chloride as a stripping removing solution (wet processing solution). The stripping / removing liquid in the fourth stripping liquid removing tank 26 is heated and evaporated by the heater H into the third stripping liquid removing tank 25, and the condensed liquid is passed through the water separator 26A. The second stripping solution removing tank 24 flows the stripping and removing liquid from the third stripping solution removing tank 25, and the first stripping solution removing tank 23 flows the stripping and removing liquid from the second stripping solution removing tank 24. The stripping solution in the first stripping solution removing tank 23 flows into the fourth stripping solution removing tank 26 and is circulated.
The stripping solution adhering to the surface of the transparent glass substrate SUB is sequentially dissolved from the first stripping solution removing tank 23, and finally the fourth stripping solution removing tank.
Vapor cleaning is performed by the vapor of the stripping and removing liquid from 26.
In this vapor cleaning, when the surface of the transparent glass substrate SUB is relatively cooled, vapor adheres easily and the degree of cleaning is higher.

Next, it is conveyed to the hot pure water tank 27, and the surface of the transparent glass substrate SUB is washed with hot pure water. After that, the first hot pure water washing tank 28, the second hot pure water washing tank 29, and the third hot pure water washing tank 30 are washed. The substrates are sequentially transported to clean the surface of the transparent glass substrate SUB.

Next, after being conveyed to the hot water drying tank 31 and washed with hot pure water, hot air 31a is blown to dry the surface of the transparent glass substrate. Hot air 31a, like each of the hot air 8a, 18a,
Use hot air of nitrogen gas.

 Next, it is stored in the unloader 32.

By performing these series of development processing, etching processing, and stripping processing, the wet processing ends.

Next, a description will be given of a specific configuration of each unit constituting the integrated automatic line system of the wet processing apparatus described above.

Each of the loaders or unloaders 1, 10, 19, and 32 provided in each of the processing units is configured as shown in FIGS. 3 and 4. FIG. 3 is a perspective view of a main part showing a front part of a developing section of the wet processing apparatus. FIG. 4 is an enlarged perspective view of the loader 1. Loader or unloader 1,10,19,
Since each of the 32 has basically the same structure, the loader 1
Is illustrated only and described.

As shown in FIGS. 3 and 4, the loader (supply stocker) 1 removably supports a substrate holding jig (substrate holding means) 40 for holding the transparent glass substrate SUB in a single-wafer manner. It is configured. The loader 1 mainly includes a pair of jig supports 1A, a jig support 1B, a moving table 1C, and a moving device 1D.

The jig support 1A is attached to the jig support 1B, and is configured to dispose a plurality of substrate holding jigs 40 in the transport direction and detachably support the jigs. The jig support 1A
It is composed of a light aluminum alloy that is relatively lightweight and has high mechanical strength. Further, the jig support 1A may be made of a metal material such as titanium steel or a resin material such as a peak (polyethyl-telketone) material.

The jig support 1B is configured to be detachably mounted on the moving table 1C.

The moving table 1C is configured to move the jig support 1B in the transport direction (the direction of the arrow A) of the transparent glass substrate SUB by the driving device 1D. This movement is performed so that after one substrate holding jig 40 is conveyed, the next substrate holding jig 40 is located at that position.

The driving device 1D mainly includes a rack 1E fixed to the moving table 1C, a pinion 1F engaged with the rack 1F, and a step motor 1G for rotating the pinion 1F stepwise.

The substrate holding jig 40 for holding the transparent glass substrate SUB in a single-wafer manner is configured as shown in FIG. 3, FIG. 4, FIG. 5, and FIG. FIG. 5 is a front view of the substrate holding jig 40, and FIG. 6 is an enlarged sectional view of a main part of the substrate holding jig 40.

As shown in FIGS. 3 to 6, the substrate holding jig (substrate holding means) 40 is configured to hold the transparent glass substrate SUB in a single-wafer manner. That is, the substrate holding jig 40
Is configured to hold one transparent glass substrate SUB so that the surface (the surface to be processed) is not blocked by another transparent glass substrate SUB during wet processing. The substrate holding jig 40 is configured to hold the transparent glass substrate SUB such that the surface (the surface to be processed) is substantially vertical.

The board holding jig 40 mainly includes two holding sides 40A and 40B,
It comprises a supported portion 40C, a transferred portion 40D, and holding members 40E to 40G. Each of the holding sides 40A and 40B is configured to intersect at a predetermined angle, for example, an angle of about 90 [degrees]. That is, the holding sides 40A and 40B are formed in an L-shape or a V-shape. For example, the substrate holding jig 40 for holding a square transparent glass substrate SUB (270 × 200 [mm]) of about 10 [inch] has a long side holding side 40A of, for example, 350 [mm].
The holding side 40B on the short side is configured with a dimension of about 300 [mm]. Each of the holding sides 40A and 40B is made of, for example, a high melting point metal material (titanium in the present embodiment) so as to withstand various wet processing liquids and withstand heating by the baking furnaces 9 and 20. Further, each of the holding sides 40A and 40B may be made of a resin material such as a peak material.

The holding side 40A has two holding members 40E and 40F and a holding side 40B.
Is provided with one holding member 40G. That is, the substrate holding jig 40 is provided with a total of three holding members 40E to 40G. Each of the holding members 40E to 40G is formed in a cylindrical shape, and a groove having a reverse trapezoidal cross section is formed in a circumferential portion thereof as shown in FIG. The cylindrical holding members 40E to 40G are configured so that the transparent glass substrate SUB can be smoothly mounted on the substrate holding jig 40 from the position indicated by the dotted line in FIG. Each of the grooves of the holding members 40E to 40G has an end portion (side β, γ shown in FIG. 5) of the transparent glass substrate SUB.
) Are configured to engage by their own weight. The transparent glass substrate SUB has two different sides (side β,
γ), is held by three-point support based on the three holding members 40E to 40G. The transparent glass substrate SUB held by the three-point support in this manner includes the holding members 40E to 40E.
Each of the 40G grooves is sandwiched between the grooves so that there is no play due to its own weight, and can be configured to be detachable. That is, the transparent glass substrate SUB is held in a stable state by the substrate holding jig 4.
It can be detachably held at zero. Holding members 40E-40
Each of G is made of, for example, a fluorine resin material. Also,
Each of the holding members 40E to 40G can be made of a resin material such as a peak material, and when each of the holding sides 40A and 40B is made of the same resin material, they can be molded integrally therewith. .

The transparent glass substrate SUB is configured to be mounted on the substrate holding jig 40 by a transfer device (not shown) for holding and transferring the back surface facing the front surface by vacuum suction.

The supported portion 40C is integrally formed with each of the holding sides 40A and 40B. The supported portion 40C is a jig supporting portion 1 of the loader 1.
The substrate holding jig 40 is configured to be in contact with A and to support the substrate holding jig 40 on the loader 1. Further, the supported portion 40C is configured to support the substrate holding jig 40 even during wet processing.

The transported section 40D is formed in a convex shape, and the loader 1
Thus, the substrate holding jig 40 is stably transported to each wet processing tank. As described later, the transfer finger portion 42A of the transfer device 42 is configured to abut the transferred portion 40D.

The substrate holding jig 40 has a holding side 40A, a holding side 40B, and a supported portion.
Each of the transfer member 40C, the transferred portion 40D, and the holding members 40E to 40G is integrally molded. That is, the substrate holding jig
40 is not only composed of a simple structure, but also very easy to form.

As described above, in the wet processing apparatus, the transparent glass substrate SUB (substrate to be processed) is held in a single-wafer manner, and the surface (target surface) of the transparent glass substrate SUB is held so as to be substantially vertical. By configuring the substrate holding jig (substrate holding means) 40, the surface is always exposed during the wet processing, the unevenness of the wet processing can be eliminated, and the stable wet processing can be performed. In addition, since the transparent glass substrate SUB is set up and the area occupied by the wet processing can be reduced, the size of the apparatus can be reduced.

Further, the substrate holding jig 40 can immediately drain the wet processing liquid by holding the transparent glass substrate SUB upright (substantially vertical). That is,
In each wet processing, the surface of the transparent glass substrate SUB is dried better (because it is faster), so that the next wet processing can be immediately performed, and the time required for completing the product can be reduced. . In addition, in each wet processing, since the surface of the transparent glass substrate SUB is dried well, the next wet processing can be immediately performed,
There is no longer any need to bring the previous wet processing liquid into the next wet processing liquid. In addition, in each wet treatment, the surface of the transparent glass substrate SUB is dried well, so that the use of a combustible solvent such as isopropyl alcohol (IPA) which accelerates the drying can be stopped. Can be enhanced.

The substrate holding jig 40 is configured so that each of the holding sides 40A and 40B has a predetermined angle with respect to a horizontal plane, and is configured to hold the transparent glass substrate SUB obliquely. The transparent glass substrate SUB held at an angle is such that one corner (the corner c shown in FIG. 5) around it is located at the lowest position with respect to the other corners (the corners a, b, and d). Is set to
That is, the substrate holding jig 40 is configured to be able to hold the transparent glass substrate SUB such that the wet processing liquid adhered to the surface (the surface to be processed) dripping substantially from one point (corner c). .

As described above, the substrate holding jig 40 is provided on the transparent glass substrate SUB.
Is held obliquely, liquid dripping can be positively generated from one point (corner c) of the transparent glass substrate SUB, so that the wet processing liquid can be drained more immediately.

Further, as shown in FIG. 5, the substrate holding jig 40
The transparent glass substrate SUB is configured to be held at a position where the surface (the surface to be processed) of the transparent glass substrate SUB does not exist in the direction in which the attractive force acts. That is, the substrate holding jig 40
The side β where the surface of the transparent glass substrate SUB does not exist in the direction in which the attractive force acts is held on the holding side 40A with the holding members 40E and 40F interposed therebetween, and the side γ is held on the holding side 40B with the holding member 40G interposed. It is configured to hold in.

As described above, the substrate holding jig 40 holds the transparent glass substrate SUB at a position where the surface does not exist in the direction in which the attractive force acts, thereby holding the holding member 40 on the surface of the transparent glass substrate SUB.
Liquid dripping of the wet processing liquid from each of E, 40F, and 40G can be eliminated. Therefore, the surface of the transparent glass substrate SUB can reduce wet processing unevenness. When the transparent glass substrate SUB is held at a position (side α, δ) where the surface exists in the direction in which the attractive force acts, the transparent glass substrate SUB
The wet processing liquid from the holding member drips on the surface of the substrate.

Further, as described above, the substrate holding jig 40 is configured to hold the transparent glass substrate SUB by two holding sides 40A and 40B intersecting at a predetermined angle.

As described above, the substrate holding jig 40 can freely change the size of the transparent glass substrate SUB by holding the transparent glass substrate SUB by the two holding sides 40A and 40B. That is, the substrate holding jig 40 can freely and stably hold not only 10 [inch], but also a transparent glass substrate SUB of a larger size or a smaller size.
Being able to freely change the size of the transparent glass substrate SUB can diversify the wet processing process. That is, the wet processing process is not limited to the liquid crystal display device, and can be applied to a transparent glass substrate for forming a reticle or a photomask, and a semiconductor wafer (semiconductor substrate) for forming a semiconductor device. Further, since the substrate holding jig 40 holds the transparent glass substrate at three points by the three holding members 40E to 40G, the size of the transparent glass substrate SUB can be freely changed also in this regard.

Further, the substrate holding jig 40 is formed in an L-shape or a V-shape so as to cross each of the holding sides 40A and 40B holding the transparent glass substrate SUB, so that the substrate holding jig 40 adheres to the substrate holding jig 40 itself. The wet processing liquid to be dripped can be dripped positively from the intersecting point, so that the liquid can be drained immediately.

The substrate holding jig 40 for holding the transparent glass substrate SUB is transported from the loader 1 to an elevating device 41 provided for each wet processing tank, as shown in FIG. 7 (a front view of the elevating device). . The substrate holding jig 40 transported to the elevating device 41 is immersed in a wet processing liquid in a wet processing tank.

As shown in FIG. 7, the lifting device 41 mainly includes a vertical moving table 41A, a jig supporting portion 41B, a rotation preventing member 41C, and a vertical driving device 41D.

The vertical moving table 41A is formed in an L-shape, and a part thereof is formed integrally (or as a separate member) with the jig supporting portion 41B. The vertical moving table 41A is configured to support the substrate holding jig 40 with the jig supporting portion 41B interposed therebetween. The jig support 41B is configured to abut the supported portion 40C of the substrate holding jig 40. Jig support part 41B of this contact part
Has a concave shape in order to stably support the supported portion 40C of the substrate holding jig 40.

The vertical moving table 41A has holding sides 40A and 40A of the substrate holding jig 40.
At a position corresponding to the intersection with B, a rotation preventing member 41C is provided. The rotation preventing member 41C is formed in a concave shape so as to define the positions of the holding sides 40A and 40B of the substrate holding jig 40 from both sides. The rotation preventing member 41C is configured to stably hold the substrate holding jig 40 so as not to rotate.

Each of the vertical moving table 41A, the jig supporting portion 41B, and the rotation preventing member 41C is made of a metal material such as titanium steel or other high melting point metal, a peak material, a fluorine material, etc. It is made of a resin material such as a resin.

The other part of the vertical moving table 41A is connected to the vertical driving device 41D. The vertical driving device 41D is configured to move the vertical moving table 41A in the vertical direction (the direction of arrow B).
That is, the vertical driving device 41D supports the substrate holding jig 40 conveyed near the insertion port of the wet processing tank,
Insert this substrate holding jig 40 into the wet processing tank (down)
Then, the surface of the transparent glass substrate SUB can be subjected to a wet process. Also, vertical drive
41D is configured such that the wet-processed transparent glass substrate SUB is again moved (raised) to the vicinity of the insertion port, and the substrate holding jig 40 can be transported to the next wet processing tank. The up-down driving device 41D is configured by, for example, an air cylinder. Further, the vertical drive device 41D may be constituted by a lifting mechanism including a hydraulic cylinder and a step motor. The driving of the vertical driving device 41D, that is, the elevation of the vertical moving table 41A, is sequence-controlled by a microcomputer (not shown).

As shown in FIG. 3 and FIG. 8 (partial cross-sectional perspective views of the developing tank), the developing tank 3 (or 4) of the developing section as the wet processing tank It is configured so that the surface of the transparent glass substrate SUB can be wet-processed with the moving table 41A or the like interposed. That is, the developing tank 3 is basically formed of a hollow rectangular parallelepiped having an insertion port for the transparent glass substrate SUB on the upper side. Developing tank 3
Is configured such that the transparent glass substrate SUB can be inserted in a single-wafer manner and the surface of the transparent glass substrate SUB can be inserted substantially vertically.

A liquid tank section for retaining a developing solution (wet processing liquid) is formed at the bottom of the developing tank 3. The amount of the developer in the liquid tank portion exceeding the reference level is discharged to the spare tank 3B by the liquid amount maintaining mechanism 3A, so that the reference level is always maintained. The liquid amount maintaining mechanism 3A is fixed to a side wall of the developing tank 3 by, for example, welding. The bottom of the developing tank 3 is formed in a V-shape so as to collect the contaminants in one place in order to prevent the contaminants in the developer from settling. At the bottom of the developing tank 3, a discharge valve 3C for discharging the developing solution is provided.

Although not shown in FIG. 8, as shown in FIG. 2, the developer discharged to the preliminary tank 3B is supplied (circulated) to the developing tank 3 through the pump P and the filter F.
As described above, by forming the spare tank 3B in the developing tank 3 and circulating the developing solution, the substantial amount of the developing solution can be increased, so that the size of the developing tank 3 can be reduced. In other words, the developing tank 3 has a large amount of developing solution despite its small size, so that stable developing processing can be performed.
Note that a spare tank 4B is provided in the developing tank 4 of the developing section. Spare tank 11 of spare tank 11 in etching section
a, spare tanks 13a-13 for each of the etching tanks 13A-13C
c is provided. Preliminary tanks 21A and 22B are provided in the stripping tanks 21 and 22, respectively, of the stripping section.

A processing liquid spraying device 3D is configured between the insertion opening of the transparent glass substrate SUB of the developing tank 3 and the liquid tank section. The processing liquid spraying device 3D is configured to spray the developing liquid on the surface of the transparent glass substrate SUB that has been subjected to the development processing in the liquid tank portion of the developing tank 3. As the developer to be sprayed, a new solution is used. Although the supply source of the processing liquid spraying device 3D is not shown, a supply tank for supplying a developing liquid of a new liquid, a control valve for controlling the amount of the supplied developing liquid, and supplying the developing liquid (arrow C) Supply pipe). The supply pipe of the processing liquid spraying device 3D is provided on the outer periphery of the developing tank 3, and the developing liquid is blown out from the outlet formed on the side wall of the developing tank 3 (blows out in the direction of arrow D). . That is, since the supply pipe of the processing liquid spraying device 3D is piped to the outer peripheral portion, the inner surface of the developing tank 3 becomes flat, and it is very easy to clean the inner surface during maintenance.

In the liquid tank portion of the developing tank 3, the processing liquid spraying device 3D constantly supplies a constant amount of new liquid developer and the liquid amount maintaining mechanism 3A constantly discharges a constant amount of developing liquid. The concentration can be kept constant. In other words, in the developing process in the developing tank 3, the concentration of the developing solution can be constantly maintained at a constant level, so that the developing conditions can be constantly maintained at a constant level and a stable developing process can be performed.

The developing tank 3 is made of, for example, a resin material such as a peak material so as to withstand the developing solution. A washing tank 5 next to the developing tank 3,
6, 7 and the etching tank 13 of the etching processing section are also made of a resin material. Hot water drying tank 8, 18, 32 as wet processing tank
The hot water tanks 15, 16, 17, 27, etc. are made of a metal material such as stainless steel.

As described above, in the wet processing apparatus, the developing tank (wet processing tank) 3 into which the transparent glass substrate SUB can be inserted in a single-wafer manner and in a state where the surface is substantially vertical is formed. A processing solution spraying device 3D for spraying the developing solution between the insertion portion of the transparent glass substrate SUB of the developing bath 3 and the liquid bath portion. After the development processing is performed in the liquid tank section, unevenness in the development processing can be eliminated by the developer sprayed from the processing liquid spraying device 3D, so that the wet processing can be stably performed.

Further, as described above, in the wet processing apparatus, by using a new liquid for the developing solution sprayed from the processing liquid spraying apparatus 3D, the new liquid can be constantly sprayed on the surface of the transparent glass substrate SUB. Can be performed more stably. Further, by supplying the developing solution of the new solution sprayed from the processing solution spraying device 3D to the liquid tank as it is, the concentration of the developing solution can be kept constant, so that the developing process can be performed more stably.

Rinse tanks 5, 6, 7, 12, 14 as wet treatment tanks, hot pure water tank 1
Each of 5,16,17,27,28,29,30
) Is configured as shown in FIG. 9 (schematic sectional view of a wet processing tank). The washing tank 5 is basically the same as the developing tank 3 except that the washing liquid is jetted from the bottom of the liquid tank part to overflow the entire surface of the liquid in the liquid tank part. The washing tank 5 is configured to discharge contaminants having a light specific gravity, particularly of resin, by overflow. As in the case of the developing tank 3, a processing liquid spraying device 5D is configured between the insertion port of the transparent glass substrate SUB of the washing tank 5 and the liquid tank section.

Each of the hot water drying tanks 8, 18, and 31 as a wet processing tank (hereinafter, representatively referred to as a hot water drying tank 8) is basically the same as the water washing tank 5, but instead of the processing liquid spraying device 5, It constitutes a hot air blowing device 8A. The hot air blowing device 8A is provided with a hot air 8a (18a, 31a) in order to accelerate drying on the surface of the transparent glass substrate SUB.
a) is blown like an air knife.

Rinsing tank 14, hot pure water tank 15-17 of the etching processing section,
The so-called cleaning tanks of the stripping solution removing tanks 23 to 25 and the hot and pure water washing tanks 28 to 30 in the stripping section are denoted by reference numeral US in FIG. 2 (the specific structure is not shown). ), An ultrasonic vibration device is connected. The ultrasonic vibration device is configured to ultrasonically vibrate the wet processing liquid (cleaning liquid) in the liquid tank portion of these cleaning tanks in the direction of arrow E as shown in FIG.

As described above, the processing liquid spraying device 5D is formed in the wet processing tank particularly used as the cleaning tank, and the ultrasonic vibration device is connected to the wet processing tank, so that the wet pressure applied by the processing liquid spraying device 5D is applied. Since the processing liquid (cleaning liquid) can be sprayed on the surface of the transparent glass substrate SUB, foreign substances can be surely removed, and ultrasonic vibration can be applied to the cleaning liquid in the liquid tank by an ultrasonic vibration device. Therefore, fine contaminants adhering to the surface of the transparent glass substrate SUB can be reliably removed. That is, the cleaning effect can be enhanced.

Each of the preliminary tank 1 of the developing section and the preliminary tank 11 of the etching section as a wet processing tank is basically the same as the developing tank 3, except that the processing tank spraying device 3D is not provided and only the liquid tank section is provided. It is composed of

The etching tank 13 (13A to 13C) of the etching processing section as a wet processing tank is basically the same as the developing tank 3, but is constituted only by a processing liquid spraying device without providing a liquid tank section.

The post-baking process performed in the baking furnace 9 of the developing section shown in FIG. 2 is performed in a state where the surface of the transparent glass substrate SUB is substantially vertical, as in each wet processing tank. That is, the baking furnace 9 inserts the transparent glass substrate SUB upright and inserts the heater 9
Post-baking is performed by heating with A. The baking furnace 20 for performing the baking processing of the peeling processing section is configured similarly to the baking furnace 9 described above.

In this manner, the baking furnace 9 (or the baking furnace 9 (or
By configuring (20), the area occupied by the baking furnace 9 can be reduced, so that the wet processing apparatus can be downsized.

Further, by arranging the heater 9A of the baking furnace 9 (or 20) so as to face the front and back surfaces of the transparent glass substrate SUB, respectively, it is possible to uniformly heat each of the front and back surfaces of the transparent glass substrate SUB. As a result, the distribution of stress due to heating becomes uniform, and the transparent glass substrate SUB does not warp. As a result, the transparent glass substrate SU
Since damage to B and damage to each layer can be reduced, the production yield in wet processing can be improved.

The transparent glass substrate SUB such as from the loader 1 to the wet processing tank and from the wet processing tank to the next wet processing tank.
The transfer of the (substrate holding jig 40) is performed by the transfer device 42 shown in FIG. 3 and FIG. The transfer device 42 mainly includes unit moving members 42Aa, 42Ab, 42Ac,..., Transfer finger portions 42B,
Connecting member 42C, X direction driving device 42D, Y direction driving device 42E
It is composed of

The unit moving member 42A is provided between the wet processing tank and the next wet processing tank, such as between the loader 1 and the preliminary tank 2 in the developing processing section, between the preliminary tank 2 and the developing tank 3, and the like. It is individually configured to be located. Each unit moving member 42A
Is provided with a transfer finger portion 42B that engages with the transferred portion 40D of the substrate holding jig 40 and individually transfers the substrate holding jig 40. The transfer finger 42B is connected to the substrate holding jig 40.
It is formed in a concave shape so that it can be stably engaged with the transported portion 40D. The unit moving member 42A is
It is configured integrally with 2B (or configured with a separate member).
Each of the unit moving member 42A and the transfer finger portion 42B is made of a metal material, such as stainless steel, which withstands various wet processing liquids and has high mechanical strength.

Each unit moving member 42A configured for each of the wet processing tanks is connected by a connecting member 42C. The connecting member 42C is configured for each processing unit, for example, each of a development processing unit, an etching processing unit, and a peeling processing unit. If necessary, a plurality of connecting members 42C may be formed in the developing section. The connecting member 42C is configured to move the connected unit moving members 42A collectively.

The connecting member 42 is connected to an X-direction driving device 42D for transferring the transparent glass substrate SUB in the transfer direction (arrow X direction). The X-direction drive device 42D is provided in the transport direction (x ₂ ),
Each unit moving member 42A connected by the connecting member 42 is moved in each of the opposite conveyance directions (x ₁ ).

The X-direction drive device 42D is connected to a Y-direction drive device 42E that moves the transparent glass substrate SUB (substrate holding jig 40) up and down (in the direction of the arrow Y). This Y-direction drive device 42E
Each unit moving member 42A connected by the connecting member 42 is moved in the upward direction (y ₁ ) and the downward direction (y ₂ ).

Each of the X-direction drive device 42D and the Y-direction drive device 42E is configured by, for example, an air cylinder. Also, the X-direction driving device 42
Each of the D and Y direction driving devices 42E may be constituted by a transport mechanism including a hydraulic cylinder and a step motor.

Thus, in the wet processing apparatus, the transparent glass substrate SUB is a single-wafer type and the wet processing tank into which the surface can be inserted substantially vertically is provided by the transparent glass substrate SU.
A plurality of unit moving members 42A configured to transport the transparent glass substrate SUB from the wet processing tank to the next wet processing tank are configured for each of the wet processing tanks. The unit moving members 42A are connected by the connecting members 42C, and the common driving devices 42D and 42E for transporting the transparent glass substrate SUB are connected to the plurality of connected unit moving members 42A. Since it is not necessary to provide a driving device for each unit moving member 42A,
The number of driving devices can be reduced, and the transfer device 42 can be simplified.

Further, since the transparent glass substrate SUB (substrate holding jig 40) can be sequentially transferred from the wet processing tank to the next wet processing tank, continuous wet processing can be realized.

Note that, as shown in FIG. 3, the transport device 42 is provided with a stopper member 42F at a position close to the loader 1.
The stopper members 42F are individually connected to the substrate holding jig 4 from the loader 1.
It is configured to regulate the operation of the unit moving member 42Aa so that 0 can be transported.

Next, the operation of the wet processing apparatus will be briefly described.

First, as shown in FIGS. 3 and 4, the jig support 1B is mounted on the moving table 1C of the loader 1. Jig support
On 1B, a plurality of substrate holding jigs 40 each holding a transparent glass substrate SUB in a single-wafer manner are supported. Moving table 1C
The substrate holding jig 40 supported by the jig support 1B is moved stepwise by being driven in the transport direction by the drive of the driving device 1D.

The substrate holding jig 40 at the leading end in the transfer direction that moves stepwise
Is driven by the X-direction drive unit 42D and the Y-direction drive unit 42E, is supported by the transfer finger unit 42B of the unit moving member 42Aa, and is transferred to the jig support unit 41B of the elevating device 41 of the preliminary tank 2.

Next, by lowering the vertical moving table 41A of the lifting device 41,
The surface of the transparent glass substrate SUB is cleaned in the liquid tank part of the preliminary tank 2.

When the cleaning in the preparatory tank 2 is completed, the substrate holding jig 40 is moved to the vicinity of the insertion opening of the preparatory tank 2 (transfer start and end positions) by raising the vertical moving table 41A of the lifting device 41. Then, the transparent glass substrate SUB that has been cleaned in the preliminary tank 2 by the next unit moving member 42Ab is transported to the next developing tank 3. When the substrate holding jig 40 is transported from the preliminary tank 2 to the developing tank 3, the substrate holding jig 40 is newly transported from the loader 1 to the preliminary tank 2, and a connection process is performed.

Similarly, the substrate holding jig 40 conveyed to the developing tank 3 is inserted into a developing solution tank by the elevating device 41, and performs a developing process on the photoresist film on the surface of the transparent glass substrate SUB. After a lapse of a predetermined time, the processing liquid spraying device 3 is synchronized with the operation of lifting the transparent glass substrate SUB from the liquid tank portion of the developing tank 3.
By D, a new developing solution is sprayed on the surface of the transparent glass substrate SUB. The spraying of the developing solution by the processing solution spraying device 3D may be performed at the stage of inserting the transparent glass substrate SUB into the developing tank 3.

When the developing processing in the developing tank 3 is completed, the substrate holding jig 40 is further transported to the next developing tank 4. As described above, when the transparent glass substrate SUB is sequentially transported to the wet processing tank and the substrate holding jig 40 is stored in the unloader 10, the developing process (wet process) is completed.

The tact of the transfer device 42 (tact of the unit moving member 42A) is set based on the longest wet processing time in the developing processing section. The wet processing time of each wet processing tank is controlled by controlling the driving of the lifting / lowering device 41 in sequence.

Thereafter, an etching process and a peeling process are sequentially performed, and a series of wet processes is completed. In addition, in the etching processing section, each of the preliminary tank 11 and the etching tank 13 is configured to be able to automatically change each wet processing tank according to the processing because the wet processing liquid differs depending on the layer to be etched.

Further, after the integrated wet processing of the development processing unit is completed by the wet processing apparatus, the substrate holding jig 40 (transparent glass substrate SUB) housed in the unloader 10 can be transferred to the dry etching apparatus.

Next, a specific structure of an active matrix type color liquid crystal display device in which wet processing is actually performed by the wet processing apparatus of this embodiment will be briefly described with reference to FIG. I do.

As shown in FIG. 10, in the active matrix type liquid crystal display device, a pixel having a thin film transistor TFT and a transparent pixel electrode ITO is formed on the inner surface (liquid crystal side) of a lower transparent glass substrate SUB1. The transparent glass substrate SUB1 has a thickness of, for example, about 1.1 [mm].

Each pixel is arranged in an intersection area between a scanning signal line (gate signal line or horizontal signal line) GL and a video signal line (drain signal line or vertical signal line) DL. Scan signal line GL
Extend in the column direction and are arranged in a row direction.
The video signal lines DL extend in the row direction and are arranged in a plurality in the column direction.

The thin film transistor TFT of each pixel mainly has a gate electrode G
T, an insulating film GI, an i-type semiconductor layer AS, and a pair of a source electrode SD1 and a drain electrode SD2.

The gate electrode GT is formed of a single-layer first conductive film g1. The first conductive film g1 is formed, for example, using a chromium (Cr) film formed by sputtering and having a thickness of about 100 [Å].

The scanning signal line GL is formed of a composite film including a first conductive film g1 and a second conductive film g2 provided thereon. The first conductive film g1 of the scanning signal line GL is formed in the same manufacturing process as the first conductive film g1 of the gate electrode GT, and is integrally formed. The second conductive film g2 is, for example, an aluminum (Al) film formed by sputtering,
It is formed with a thickness of about 00 [Å]. The second conductive film g2 is configured to reduce the resistance value of the scanning signal line GL and increase the signal transmission speed (pixel selection speed).

Further, the scanning signal line GL is configured such that the width of the second conductive film g2 is smaller than the width of the first conductive film g1. That is, the scanning signal line GL is configured so that the step shape of the side wall is reduced and the surface of the insulating film GI on the scanning signal line GL can be flattened.

The insulating film GI is used as a gate insulating film of the thin film transistor TFT. The insulating film GI is formed above the gate electrode GT and the scanning signal line GL. The insulating film GI is, for example,
Using a silicon nitride film formed by plasma CVD, 3000
It is formed with a film thickness of about [Å].

The i-type semiconductor layer AS is used as a channel forming region of the thin film transistor TFT. The i-type semiconductor layer AS is formed of an amorphous silicon film or a polycrystalline silicon film.
It is formed with a film thickness of about 3000 [Å].

Source electrode SD1 and drain electrode of thin film transistor TFT
SD2 is provided separately on the i-type semiconductor layer AS.

Each of the source electrode SD1 and the drain electrode SD2 is configured by sequentially stacking a first conductive film d1, a second conductive film d2, and a third conductive film d3 from the lower side in contact with the i-type semiconductor layer AS. The first conductive film d1, the second conductive film d2, and the third conductive film d3 of the source electrode SD1 are formed in the same manufacturing process as that of the drain electrode SD2.

The first conductive film d1 uses a chromium film formed by sputtering and has a thickness of 500 to 1000 [Å] (in this embodiment, 600 [Å]).
(About the same thickness). The chromium film is formed in a range that does not exceed about 2000 [Å] because the stress increases when the chromium film is formed thick. The chromium film has good contact with the i-type semiconductor layer AS. The chromium film is formed by a second
It forms a so-called barrier layer that prevents aluminum of the conductive film d2 from diffusing into the i-type semiconductor layer AS. First conductive film d1
In addition to chromium film, refractory metals (Mo, Ti, Ta, W)
Film, refractory metal silicide (MoSi ₂ , TiSi ₂ , TaSi ₂ , WSi
₂ ) It may be formed of a film.

The second conductive film d2 uses an aluminum film formed by sputtering, and has a thickness of 3000 to 4000 [Å] (in the present embodiment, 3000 to 4000 [Å]).
[膜厚]. The aluminum film has less stress than the chromium film and can be formed to have a large thickness, and is configured to reduce the resistance values of the source electrode SD1, the drain electrode SD2, and the video signal line DL.
That is, the second conductive film d2 is configured to increase the operation speed of the thin film transistor TFT and increase the signal transmission speed of the video signal line DL. As the second conductive film d2, in addition to the aluminum film, silicon (S
i), an aluminum film containing copper (Cu) or titanium (Ti) as an additive.

The third conductive film d3 is formed using a transparent conductive film (ITO: Nesa film) formed by sputtering and having a film thickness of 1000 to 2000 [Å] (in this embodiment, a film thickness of about 1200 [Å]). I do. The third conductive film d3 forms the source electrode SD1, the drain electrode SD2, and the video signal line DL, and also forms the transparent pixel electrode ITO.

Each of the first conductive film d1 of the source electrode SD1 and the first conductive film d1 of the drain electrode SD2 has a larger size on the channel forming region side than the upper second conductive film d2 and the third conductive film d3. I have. The first conductive film d1 is composed of the first conductive film d1 and the second conductive film
Even if a mask misalignment occurs in the manufacturing process between d2 and the third conductive film d3, the size (first conductive film d1 to third conductive film d3) is larger than that of the second conductive film d2 and the third conductive film d3. (The respective channel forming region sides may be on-the-line). First conductive film d of source electrode SD1
1. Each of the first conductive films d1 of the drain electrode SD2 is configured to define the gate length L of the thin film transistor TFT.

The source electrode SD1 is connected to the transparent pixel electrode ITO as described above. The source electrode SD1 is formed along a step shape of the i-type semiconductor layer AS (a step corresponding to a thickness obtained by adding the thickness of the first conductive film g1 and the thickness of the i-type semiconductor layer AS). Specifically, the source electrode SD1 is connected to the i-type semiconductor layer AS
A first conductive film d1 formed along the stepped shape of the first conductive film d1, and a second conductive film d2 formed on the upper side of the first conductive film d1 with the side connected to the transparent pixel electrode ITO being smaller in size.
The third conductive film d3 is connected to the first conductive film d1 exposed from the second conductive film. The first conductive film d1 of the source electrode SD1 has good adhesion to the i-type semiconductor layer AS, and is mainly configured as a barrier layer against diffusion from the second conductive film d2. Since the second conductive film d2 of the source electrode SD1 cannot form a thick chrome film of the first conductive film d1 due to an increase in stress and cannot overcome the step of the i-type semiconductor layer AS, the second conductive film d2 is It is configured to get over. That is, the step coverage is improved by forming the second conductive film d2 to be thick. Since the second conductive film d2 can be formed thick, it greatly contributes to a reduction in the resistance value of the source electrode SD1 (the same applies to the drain electrode SD2 and the video signal line DL). Since the third conductive film d3 cannot get over the step shape caused by the i-type semiconductor layer AS of the second conductive film d2, the third conductive film d3 is exposed to the first conductive film d1 by reducing the size of the second conductive film d2. It is configured to connect. The first conductive film d1 and the third conductive film d3 not only have good adhesiveness, but also have a small step at the connection between them, so that they can be reliably connected.

The drain electrode SD2 is formed integrally with the video signal line DL, and is formed in the same manufacturing process.

The transparent pixel electrode ITO is provided for each pixel, and constitutes one of the pixel electrodes of the liquid crystal display unit. The transparent pixel electrode ITO is connected to the source electrode SD1 of the thin film transistor TFT.

On the thin film transistor TFT and the transparent pixel electrode ITO, a protective film PSV1 is provided. The protective film PSV1 is mainly formed to protect the thin film transistor TFT from moisture and the like, and uses a film having high transparency and good moisture resistance. The protective film PSV1 is formed of, for example, a silicon oxide film or a silicon nitride film formed by plasma CVD, and has a thickness of about 8000 [Å].

On top of the protective film PSV1 on the thin film transistor TFT, an i-type semiconductor layer where external light is used as a channel formation region
A shielding film LS is provided so as not to be incident on the AS.
The shielding film LS has a high light shielding property, for example, is formed of an aluminum film or a chromium film.
It is formed to a thickness of about 00 [Å].

The liquid crystal LC is defined and enclosed in a lower alignment film ORI1 and an upper alignment film ORI2 for setting the direction of liquid crystal molecules in a space formed between the lower transparent glass substrate SUB1 and the upper transparent glass substrate SUB2. .

The lower alignment film ORI1 is formed above the protective film PSV1 on the lower transparent glass substrate SUB1 side.

On the inner (liquid crystal side) surface of the upper transparent glass substrate SUB2, a color filter FIL, a protective film PSV2, a common transparent pixel electrode ITO, and the upper alignment film ORI2 are sequentially laminated and provided.

The common transparent pixel electrode ITO has a lower transparent glass substrate SUB
One side faces the transparent pixel electrode ITO provided for each pixel, and is configured integrally with another adjacent common transparent pixel electrode ITO.

The color filter FIL is configured by coloring a dye on a dyed base material formed of a resin material such as an acrylic resin.
The color filter FIL is configured for each pixel at a position facing the pixel and is dyed separately.

The protective film PSV2 is provided in order to prevent the dye obtained by dyeing the color filter FIL into different colors from leaking into the liquid crystal LC. The protective film PSV2 is formed of, for example, a transparent resin material such as an acrylic resin or an epoxy resin.

In this liquid crystal display device, the respective layers on the lower transparent glass substrate SUB1 side and the upper transparent glass substrate SUB2 side are separately formed, then the upper and lower transparent glass substrates SUB1 and SUB2 are overlapped, and the liquid crystal LC is sealed between the two. Assembled by

The center part of FIG. 10 shows a cross section of one pixel part,
The left side shows the cross section of the left edge portion of the transparent glass substrates SUB1 and SUB2 where the lead wiring exists. The right side shows a cross section of a portion where no extraction wiring exists at the right edge portion of the transparent glass substrates SUB1 and SUB2.

The sealing material SL shown on the left and right sides of FIG.
It is configured to seal the LC, and is formed along the entire periphery of the transparent glass substrates SUB1 and SUB2 except for the liquid crystal sealing port (not shown). The sealing material SL is formed of, for example, an epoxy resin.

The common transparent pixel electrode IT on the upper transparent glass substrate SUB2 side
O is connected to the lead wiring layer formed on the lower transparent glass substrate SUB1 side by the silver paste material SIL at least at one location. This lead-out wiring layer is formed in the same manufacturing process as the above-described gate electrode GT, source electrode SD1, and drain electrode SD2.

The respective layers of the alignment films ORI1 and ORI2, the transparent pixel electrode ITO, the common transparent pixel electrode ITO, the protective films PSV1 and PSV2, and the insulating film CI are formed inside the sealing material SL. Polarizer POL
Is the lower transparent glass substrate SUB1 and the upper transparent glass substrate SUB2
Are formed on the respective outer surfaces.

Table 1 at the end of the specification shows a schedule of an example of a wet process to be performed on the active matrix type liquid crystal display device.

As shown in Table 1, the first and second wet processing steps are steps for forming a pattern of the gate electrode GT of the thin film transistor TFT. The gate electrode GT is, as described above,
The second conductive film g2 is laminated on the first conductive film g1. The numbers described in the processing schedule correspond to the numbers of the loader 1 and the wet processing tank described above.

In the third wet processing step, the thin film transistor TFT i
This is a step of forming a pattern of the mold semiconductor layer AS.

The fourth wet processing step is a step of forming a pattern of the insulating film GI of the thin film transistor TFT.

The fifth and sixth wet processing steps include the thin film transistor TF
This is a step of forming respective patterns of the T source electrode SD1 and the drain electrode SD2.

The seventh wet processing step is a step of forming a pattern of a transparent electrode (or a common transparent electrode) ITO.

The eighth wet processing step is a step of forming the protective film PSV.

The ninth wet processing step is a step of forming a pattern of the light shielding film LS.

When an aluminum Al layer containing an additive such as titanium Ti or silicon Si is used as the layer, a residual treatment for removing the additive is performed.

As described above, in the wet processing apparatus, the substrate holding jig (substrate holding means) 40 for holding the transparent glass substrate SUB in a single-wafer system and holding the surface of the transparent glass substrate SUB substantially vertically, Since the transparent glass substrate SUB held by the substrate holding jig 40 is provided with wet processing means for performing wet processing, it is possible to eliminate wet processing unevenness and perform stable wet processing.
Since the wet processing can be mass-produced and the area required for the wet processing can be reduced, the size of the apparatus can be reduced.

(Embodiment II) Embodiment II is a second embodiment of the present invention in which the wet processing apparatus is configured to support and transport a substrate holding jig with high accuracy and to have high stability during transport. is there.

FIG. 11 (partial perspective view) shows a main part of a wet processing apparatus provided with an integrated wet processing line system that is Embodiment II of the present invention.

As shown in FIG. 11, in the wet processing apparatus of the present embodiment, the cross-sectional shape of each of the supported portion 40C and the transferred portion 40D of the substrate holding jig 40 is V-shaped. The jig support portion 1 of the loader 1 that contacts the supported portion 40C of the substrate holding jig 40
A, each of the jig support portions 41B (not shown) of the lifting device 41 of each wet processing tank is similarly formed in a V-shape. The transfer device 4 that contacts the transferred portion 40D of the substrate holding jig 40
The second transfer finger portion 42B is similarly formed in a V-shape.

As described above, the wet processing apparatus is configured such that the supported portion 40C of the substrate holding jig 40 is formed in a V shape, and the jig support portion 1A of the loader 1 is formed in a V shape so as to be fitted thereto. The substrate holding jig 40 can be supported on the loader 1 with high precision, and can be stably held so that the substrate holding jig 40 does not rotate. The same effect can be obtained for the lifting device 41. Further, the same effect can be obtained for the transport device 42.

In the present invention, each of the developing unit, the etching unit, and the peeling unit may be independently configured as a wet processing apparatus. That is, in the present invention, each of a wet processing apparatus dedicated to development processing, a wet processing apparatus dedicated to etching processing, and a wet processing apparatus dedicated to stripping processing may be configured.

In addition, the present invention provides a method for mounting a substrate holding jig 40 used in a wet processing apparatus on the surface (processed surface) of a transparent glass substrate SUB.
May be configured to be able to hold a plurality of sheets in a single-wafer manner without being interrupted by another transparent glass substrate SUB during wet processing. Specifically, the substrate holding jig 40 can be configured to be able to hold two transparent glass substrates SUB (single wafer type) such that the back surfaces of the two transparent glass substrates SUB face each other. it can. Further, the substrate holding jig 40 can be configured such that each of the two transparent glass substrates SUB can be arranged on the same plane (sheet-fed type) and held.

Further, the present invention mainly comprises a wet treatment tank,
Alternatively, the unit moving member 42A of the transfer device 42 may be a detachable unit, and a plurality of the units may be arranged to constitute a wet processing device. The wet processing apparatus unitized as described above can freely increase or decrease the number of wet processing tanks, so that versatility is improved.

Further, in the present invention, as the wet processing tank, an etching processing tank and a cleaning tank for aluminum may be formed of a transparent glass material. In this case, the etching state and the cleaning state of the transparent glass substrate SUB can be observed.

(Embodiment III) The present embodiment III is a third embodiment of the present invention in which the wet processing can be reliably controlled and the wet processing apparatus is downsized.

The outline of a wet processing apparatus equipped with an integrated wet processing line system that is Embodiment III of the present invention is shown in FIG.
This is shown in the figure (schematic configuration diagram).

As shown in FIG. 1, the wet processing apparatus according to the third embodiment is basically configured in the same manner as the wet processing apparatus described with reference to FIG. That is,
The wet processing apparatus is mainly configured by an integrated automated line system including a development processing section, an etching processing section (wet etching processing section), and a stripping processing section.

As shown in Table 2 at the end of the specification, the development processing section automatically performs wet processing sequentially from the left side in the drawing in each of the wet processing tanks disposed between the loader 1 and the unloader 12. Is configured to do so. A plurality of wet processing tanks are arranged in the transport direction of the transparent glass substrate SUB. The transport of the transparent glass substrate SUB is performed in the same manner as in Examples I and
As in the case of each of I, the transfer is carried out in a single-wafer manner and by the transport device 42 (however, a selective transport device 43 described later is used for the washing / developing tanks 3 to 6).

The transparent glass substrate SUB supplied from the loader 1 is
First, it is transported to the preliminary washing tank 2 and the surface of the transparent glass substrate SUB is washed.

Next, the photoresist film transported to the first washing / developing tanks 3 and 4 or the second washing / developing tanks 5 and 6 and developed on the surface of the transparent glass substrate SUB is developed to form an etching mask. The first washing / developing tanks 3 and 4 contain, for example, an organic alkali or the like as a developing solution (wet processing solution). The second washing / developing tanks 5 and 6 contain, for example, an inorganic alkali-based developer or the like as a developer. Each of the first washing / developing tanks 3 and 4 and the second washing / developing tanks 5 and 6 are configured by connecting the developing tank 3 and a washing tank (washing tank) in a vertical direction. A developing tank is arranged on the lower side, and a washing tank is arranged on the upper side with a shutter section described later interposed therebetween. That is, each of the first rinsing / developing tanks 3 and 4 and the second rinsing / developing tanks 5 and 6 are configured so that the surface of the transparent glass substrate SUB can be developed with the developing tank and then immediately washed with pure water. ing.

Next, the developer that is sequentially conveyed to each of the first washing tank 7 and the second washing tank 8 and adheres to the surface of the transparent glass substrate SUB is further washed.

Next, it is conveyed to the hot water drying tank 9 and is heated to about 80 [° C.] with hot pure water.
Then, hot air 9a is blown in the shape of an air knife to dry the surface of the transparent glass substrate SUB. As the hot air 9a, for example, hot air of nitrogen gas is used so that a water mark (water spot) is not formed on the surface of the transparent glass substrate SUB.

Next, the wafers are transferred to baking furnaces 10 and 11 and subjected to post-baking. Post-baking is performed, for example, at a temperature of about 120 ° C. for about 4 minutes.

 After that, it is stored in the unloader 12.

The etching unit is configured to automatically perform wet processing sequentially from the left side in the drawing in each wet processing tank disposed between the loader 12 and the unloader 23. A plurality of wet processing tanks are arranged in the transport direction of the transparent glass substrate SUB, similarly to the development processing section. The transport of the transparent glass substrate SUB is also a single wafer type and is performed by the transport device 42 (however, a selective transport device 43 to be described later is used for the washing / etching tanks 15 to 18).

The transparent glass substrate SUB supplied from the loader 12 is
First, it is transported to the preliminary tank 13 and the surface of the transparent glass substrate SUB is cleaned. The loader 12 is configured to supply the transparent glass substrate SUB that has been subjected to wet processing in the development processing unit. The preliminary tank 13 activates the surface of the material of the layer forming the pattern (in the present embodiment, the material of the layer forming the pattern is a chromium layer, an aluminum layer, a transparent electrode layer, and a silicon film). This is for uniform processing start. The preliminary tank 13 contains, for example, diluted hydrochloric acid as a wet treatment liquid. This spare tank
Reference numeral 13 designates a water washing tank having a shutter portion interposed on a dilute hydrochloric acid tank similarly to the water washing / developing tanks 3 to 6. That is, the preparatory tank 13 is configured so that the surface of the transparent glass substrate SUB can be treated with the dilute hydrochloric acid tank and then immediately washed with pure water. This reserve tank 13 has a reserve tank 13A that can substantially increase the amount of diluted hydrochloric acid and perform stable processing.
Is provided.

Next, it is conveyed to the washing tank 14, and the surface of the transparent glass substrate SUB is further washed.

Next, the wafer is conveyed to one of the washing / etching tanks 15 to 18 and the layer on the surface of the transparent glass substrate SUB is formed in a predetermined pattern using an etching mask formed of the photoresist film. A plurality of washing / etching tanks 15 to 18 are provided for each material of a layer forming a pattern.

The washing / etching tank 15 is an etching tank for a transparent electrode (ITO). The rinsing / etching tank 15 is configured by connecting a rinsing tank with an intervening shutter to an etching tank mainly containing, for example, HNO ₃ + HCl as an etching liquid.

The water washing / etching tank 16 is an etching tank for aluminum (Al). The water washing / etching tank 16 is configured by connecting a water washing tank via a shutter unit to an etching tank mainly containing, for example, H ₃ PO ₄ + HNO ₃ + CH ₃ COOH as an etching liquid.

The washing / etching tank 17 is an etching tank for chromium (Cr). The rinsing / etching tank 17 is configured by connecting a rinsing tank with an intervening shutter portion on an etching tank mainly containing, for example, ceric ammonium nitrate as an etchant.

The water washing / etching tank 18 is an etching tank for a silicon film (n ⁺ -Si). For example, when the washing / etching tank 18 is configured such that the first conductive film d1 of each of the source electrode SD1 and the drain electrode SD2 constituting the thin film transistor TFT of the active matrix type liquid crystal display device is formed of an n ⁺ type semiconductor layer, Used to etch it. The n ⁺ -type semiconductor layer is formed between the i-type semiconductor layer AS and the second conductive film (aluminum) d2, and is used as an improvement in ohmic characteristics and as a barrier layer. The n ⁺ type semiconductor layer is formed of an amorphous silicon film or a polycrystalline silicon film.
The rinsing / etching tank 18 is configured by connecting a rinsing tank with an intervening shutter to an etching tank mainly containing HF + HNO ₃ + CH ₃ COOH as an etching solution.

Each of the water washing / etching tanks 15, 16, 17, and 18 is configured so that a predetermined layer on the surface of the transparent glass substrate SUB is etched in each etching tank and then can be immediately washed with pure water. This washing / etching tank 15, 16, 17, 18
Each of the auxiliary tanks 15A, 16A, 17A, 1A, which can substantially increase the amount of the etching solution and perform a stable process.
Each of 8A is provided.

Next, they are sequentially transported to the first hot pure water tank 19, the second hot pure water tank 20, and the third hot pure water tank 21 to further clean the surface of the transparent glass substrate SUB.

Next, after being conveyed to the hot water drying tank 22 and washed with hot pure water, hot air 22a is blown to dry the surface of the transparent glass substrate SUB. As the hot air 22a, like the hot air 9a, hot air of nitrogen gas is used so that a water mark is not formed on the surface of the transparent glass substrate SUB.

 Next, it is stored in the unloader 23.

The stripping unit is configured to automatically perform wet processing sequentially from the left side in the drawing in each wet processing tank disposed between the loader 23 and the unloader 38. A plurality of wet processing tanks are arranged in the transport direction of the transparent glass substrate SUB similarly to the development processing section and the etching processing section, respectively. The transport of the transparent glass substrate SUB is also performed in a single-wafer manner.

The transparent glass substrate SUB supplied from the loader 23,
First, the etching mask formed on the surface of the transparent glass substrate SUB is peeled (dissolved) by being sequentially transported to the first peeling tank 24 and the second peeling tank 25. 1st peeling tank 24, 2nd peeling tank 25
As in Example I, for example, a mixed solvent is used as the stripping solution. Each of the first stripping tank 24 and the second stripping tank 25 is configured by connecting the stripping liquid spraying tank (shower tank) described in the above-described embodiment I for spraying the stripping liquid on the stripping tank as a liquid tank unit. ing. The first peeling tank 24 and the second peeling tank
Each of 25 is provided with spare tanks 24A and 25A, respectively, capable of substantially increasing the amount of the stripping solution and performing stable processing.

Next, if necessary, the photoresist film remaining on the surface of the transparent glass substrate SUB and the stripping solution adhering to the surface are transported to the solvent rinsing bath 26 and dissolved and removed. The solvent rinsing tank 26 is provided with a spare tank tank 26A.

Next, the stripping solution that is sequentially transported to the first stripping solution removing tank 27, the second stripping solution removing tank 28, the third stripping solution removing tank 29, and the fourth stripping solution removing tank 30, and adheres to the surface of the transparent glass substrate SUB. Dissolve. Each of the stripping solution removing tanks 27, 28, 29, and 30 contains, for example, methylene chloride as a stripping and removing solution (wet processing solution). The stripping solution removed from the fourth stripping solution removing tank 30 is heated and evaporated by the heater H into the third stripping solution removing tank 29, and the condensed solution is poured through the water separator 30A. The second stripping solution removing tank 28 flows the stripping and removing liquid from the third stripping solution removing tank 29, and the first stripping solution removing tank 27 flows the stripping and removing liquid from the second stripping solution removing tank 28. The stripping / removing liquid in the first stripping liquid removing tank 27 flows into the fourth stripping liquid removing tank 30 and is circulated.
The stripping solution adhering to the surface of the transparent glass substrate SUB is sequentially dissolved from the first stripping solution removing tank 27, and is finally vapor-cleaned by the vapor of the stripping removing liquid from the fourth stripping solution removing tank 30. In this vapor cleaning, when the surface of the transparent glass substrate SUB is relatively cooled, vapor adheres easily and the degree of cleaning is higher.

Next, the transparent glass substrate SUB is transported to the hot pure water tank 31, and the surface of the transparent glass substrate SUB is washed with hot pure water.

Next, it is transported to the washing / activation tank 32, where the transparent glass substrate SU
Activate the surface of the layer formed in the predetermined pattern on the surface of B. This activation treatment can increase the adhesiveness between the layer on which the pattern is formed and another layer formed thereover. As an activating liquid (as a wet treatment liquid),
For example, about 1% hydrofluoric acid is used. The rinsing / activating tank 32 is configured by connecting a rinsing tank with an intervening shutter section on the activating tank, similarly to the rinsing / etching tank. This washing / activation tank 32 has a spare tank tank 32
A is provided.

Next, it is sequentially conveyed to the first washing tank 33, the second washing tank 34, and the third washing tank 35 to further wash the surface of the transparent glass substrate SUB.

Next, after being conveyed to the hot water drying tank 36 and washed with hot pure water, hot air 36a is blown to dry the surface of the transparent glass substrate SUB. As the hot air 36a, hot air of nitrogen gas is used as in the case of each of the hot air 9a and 22a.

Next, the transparent glass substrate SUB is conveyed to an ultraviolet washing and drying tank 37, where the surface of the transparent glass substrate SUB is washed and dried. The ultraviolet cleaning / drying tank 37 supplies clean air into the tank, irradiates the clean air with ozone by irradiation of ultraviolet light, and the ozone is supplied to the transparent glass substrate.
It is configured to attack the surface of the SUB. The surface of the transparent glass substrate SUB on which ozone is attacked is dried with a very high degree of cleaning, particularly removing trace amounts of organic substances and oil.

 Next, it is stored in the unloader 38.

By performing these series of development processing, etching processing, and stripping processing, the wet processing of this embodiment is completed.

Each of the wet processing tanks constituting the integrated automatic line system of the above-described wet processing apparatus is basically the same as that described in the above-mentioned Example I. Next, a specific example of the wet processing tank with further improved performance will be described. A typical configuration will be described.

As wet processing tanks, the first washing / development tanks 3 and 4 in the development processing section, the second washing / development tanks 5 and 6, the preliminary tank 13 in the etching processing section, the washing / etching tanks 15 to 18, and the washing in the stripping processing section・
Each of the activation tanks 32 (only the washing / etching tank 15 will be described as a representative) is configured as shown in FIG. 12 (partial cross-sectional perspective view of a wet processing tank). Washing / etching tank
Reference numeral 15 denotes a transparent glass substrate SUB with a substrate holding jig 40 and a vertical moving table 41A (not shown) of a lifting / lowering device 41 interposed therebetween, basically in the same manner as the wet processing tank described in Embodiment I. Is configured to be able to wet-treat the surface. The washing / etching tank 15 is basically formed of a hollow rectangular parallelepiped having an insertion port for the transparent glass substrate SUB on the upper side. The washing / etching tank 15 is made of a transparent glass substrate SUB
Is configured to be inserted in a single-wafer manner and with the surface of the transparent glass substrate SUB substantially perpendicular.

A liquid tank section (etching tank or first wet processing section) 15B for retaining an etching liquid (first wet processing liquid) is formed at the bottom of the water washing / etching tank 15. The etching liquid in the liquid tank section 15B is once discharged into the preliminary tank 15A, supplied again through the pump P and the filter F (supplied in the direction of arrow F), and circulated.

Liquid tank part 15B of washing / etching tank 15 and transparent glass substrate S
A washing tank (washing tank or second wet processing unit) 15C is formed between the UB and the insertion port. This washing tank 15C is connected to the liquid tank section 15B via the shutter section 44A of the shutter device 44. In the washing tank 15C, pure water (washing liquid or second wet processing liquid) is applied to the surface of the transparent glass substrate SUB.
A fluid spraying device 15D for spraying is provided. Pure water sprayed from the fluid spraying device 15D is discharged from the washing tank 15C (discharged in the direction of arrow G).

The shutter device 44 mainly includes a shutter unit 44A,
It comprises a rotating shaft 44B, a crank portion 44C, and an opening / closing drive device 44D.

The shutter part 44A is a liquid tank part 1 of the washing / etching tank 15.
It is configured between 5B and the washing tank 15C. Shutter section 4
4A is configured to open and close the insertion opening of the transparent glass substrate SUB of the liquid tank section 15B, and is disposed substantially in the washing tank 15C. The shutter section 44A is mainly provided with the liquid tank section 15B
The transparent glass substrate SUB is opened for insertion, and the surface of the transparent glass substrate SUB is etched, raised, and closed. Shutter section 44A and liquid tank section 1
The air tightness with the 5B insertion slot is relatively high, and the shutter 44A
Is configured such that the transparent glass substrate SUB can be washed in the washing tank 15C after being pulled up from the liquid tank section 15B. That is, even if the surface of the transparent glass substrate SUB is washed in the washing tank 15C, the shutter 44A is configured so that the pure water is not mixed into the liquid tank 15B. The shutter portion 44A, for example, withstands each wet processing liquid, is light,
Moreover, it is made of a resin material such as a peak having high mechanical strength. Further, the shutter portion 44A may be made of a metal material such as stainless steel.

The rotating shaft 44B is for opening and closing the shutter portion 44A, and is drawn out of the washing tank 15C through an airtight sealing material (for example, an O-ring) 44E.

A crank part 44C is integrally formed with one end of the rotating shaft 44B that is drawn out. The crank portion 44C rotates the rotating shaft 44B by the operation of the opening / closing drive device 44D in the direction of arrow H,
The shutter unit 44A is configured to open and close.

The opening / closing drive device 44D includes, for example, an air cylinder, a hydraulic cylinder, an electromagnetic solenoid, and the like. The opening / closing drive device 44D (the operation of the shutter section 44A) is sequence-controlled by a microcomputer (not shown).

The wet processing apparatus having the above-described structure is configured such that the transparent glass substrate SUB (substrate holding jig 40) conveyed by the above-described conveying device 42 is washed and etched by the selective conveying device 43 in the water washing / etching tank 1.
5.Water washing / etching tanks 16 to 18 arranged in that order
Is transported to any one of the above.

Fig. 13 (Schematic configuration diagram of the transfer device)
As shown by, mainly the sliding member 43A, the jig transport member 43B,
It comprises a guide shaft 43C, a pair of rotating members for transportation 43D, a timing belt for transportation 43E, a driving device for transportation 43F, and a timing belt for transmission 43G.

The sliding member 43A supports the transport member 43B so as to be movable in the arrow Y direction, and is configured to slide in the arrow X direction along the guide shaft 43C. The sliding member 43A is configured to be slidable in a range from the washing tank 14 to the hot pure water washing tank 19, and the transparent glass is transferred from the washing tank 14 to any of the washing / etching tanks 15 to 18. The substrate SUB is transported, and the transported transparent glass substrate SUB is heated in a hot pure water washing tank 1
9 is configured to be conveyed.

The jig conveying member 43B is a unit moving member 4 shown in FIG.
It has substantially the same structure as 2A. That is, the jig transport member 43B is configured to be able to transport the transparent glass substrate SUB in a single-wafer manner via the substrate holding jig 40.

The transport timing belt 43E wound around the pair of transport rotary members 43D is connected to the sliding member 43A, and is configured to slide the sliding member 43A.

The transport driving device 43F is formed of, for example, a step motor controlled by a microcomputer (not shown). The drive shaft of the transport driving device 43F is connected to one transport rotary member 43D via a transmission timing belt 43G.

That is, the selective transport device 43 is configured to slide the sliding member 43A via the transmission timing belt 43G and the transport timing belt 43E by the operation of the transport driving device 43F. The selective transfer device 43 is configured to select one of the washing / etching tanks 15 to 18 according to the material of a layer formed on the surface of the transparent glass substrate SUB, and to transfer the transparent glass substrate SUB to a selected place. Have been.

For example, a transparent electrode (ITO) is placed on the surface of a transparent glass substrate SUB.
Is formed, the etching process is performed as follows.

First, the transparent glass substrate SUB transferred by the transfer device 42 via the substrate holding jig 40 is washed in the washing tank 14.

Next, the transparent glass substrate SUB is selectively transported by the selective transport device 43 from the rinsing tank 14 to the lifting / lowering device 41 (not shown) of the rinsing / etching tank 15. When the transparent glass substrate SUB is transported to the washing / etching tank 15, the shutter unit 44A of the shutter device 44 opens, and the transparent glass substrate SUB is opened.
Is moved to the liquid tank section 15B, and the surface of the transparent glass substrate SUB is subjected to an etching process. Thereafter, when the transparent glass substrate SUB is pulled up from the liquid tank 15B and moved to the washing tank 15C, the shutter 44A is closed, and the surface of the transparent glass substrate SUB is immediately washed by the fluid spraying device 15D. In addition, washing
The etching tank 15 may be configured so that the transparent glass substrate SUB can be washed in the washing tank 15C before the etching processing is performed in the liquid tank section 15B. In this case, the former washing tank 14 can be eliminated.

Next, when the washing in the washing / etching tank 15 is completed, the transparent glass substrate SUB is transferred to the hot pure water washing tank 19 by the selective transfer device 43. Thereafter, the same wet processing as described above is performed.

Although not shown, the selective transport device 43 is similarly configured in the washing / developing tanks 3 to 6 of the developing section.

Each of the washing / etching tanks 16 to 18 shown in FIG. 13 has a liquid tank section (16B, 17B,
18B) and a washing tank (16C, 17C, 18C).

As described above, the washing / etching tank (wet processing tank) 15 of the wet processing apparatus is replaced with a liquid tank section (first wet processing section) 15B using an etching solution (first wet processing liquid).
An opening / closing shutter portion 44A is interposed therebetween, and a washing tank (second wet processing portion) using pure water (second wet processing solution) is connected, so that the etching process can be performed in the liquid tank portion 15B. After the cleaning, the cleaning can be immediately performed in the water rinsing tank 15C, so that the end point of the etching can be defined, and the control of the etching time can be reliably performed.

In addition, the liquid tank part 15B of the washing / etching tank 15 and the washing tank 15C
By providing the shutter section 44A between the two, the etching liquid and the cleaning liquid are not mixed, so that a stable etching process can be performed.

Further, since the water washing / etching tank 15 is configured by providing the water washing tank 15C on the liquid tank part 15B, the latter can be configured within the area occupied by the former, so that two different types of wet processing tanks are occupied. The area can be reduced, and the wet processing apparatus can be downsized.

In addition, since each of the washing / etching tanks 15 to 18 is provided with the shutter portion 44A, the transparent glass substrate SUB conveyed by the selective conveyance device 43 passes above the shutter portion 44A,
Even if the wet processing liquid drips, no other wet processing liquid is mixed into each of the liquid tank portions 15B to 18B.

Further, as described above, this wet processing apparatus can perform a stable wet processing by eliminating the processing unevenness in a single wafer type, so that the mass production of the wet processing can be performed and the transparent glass substrate SUB can be formed. Since the area occupied by the vertical wet processing can be reduced, the size of the wet processing apparatus can be reduced.

(Example IV) This example IV is a fourth example of the present invention in which the wet processing tank of the wet processing apparatus described in the example III is configured to perform more stable wet processing. is there.

FIG. 14 (schematic sectional view) shows a wet processing tank of a wet processing apparatus provided with an integrated wet processing line system that is Embodiment IV of the present invention.

As shown in FIG. 14, the washing / etching tank 15 of the etching processing section of the wet processing apparatus of the present Example IV has three stages. In other words, the washing / etching tank 15B is composed of a liquid tank section 15B holding the etching liquid from below, an etching tank (shower tank) 15E for spraying the etching liquid onto the surface of the transparent glass substrate SUB with the processing liquid spraying device 15F, and pure water. The processing liquid spraying device 15D comprises a washing tank 15C spraying the surface of the transparent glass substrate SUB.

The water washing / etching tank 15 configured as described above can perform the etching process more stably and improve the control of the etching time as described in the above-described Embodiments I and II. it can.

(Example V) Example V is an example of the present invention in which the wet processing apparatus is further reduced in size.

FIG. 15 (schematic sectional view) shows a main part of a wet processing apparatus provided with an integrated wet processing line system which is Embodiment V of the present invention.

As shown in FIG. 15, the substrate holding jig 40 used in the wet processing apparatus of the present embodiment V is a supported jig supporting portion 41B of the elevating device 41 abutting on each of the holding sides 40A and 40B. Department (4
0C) and / or constitutes the transported portion (40D) with which the jig transport member 43B abuts.

The substrate holding jig 40 configured as described above includes a holding side 40
Since the supported portion and the transported portion are configured within the respective sizes of A and 40B, and the size corresponding to the supported portion and the transported portion can be reduced, the size can be reduced.

As a result, the wet processing apparatus can reduce the size of all areas of the integrated line, such as the wet processing tank and the loader 1, so that the wet processing apparatus can be reduced in size.

As described above, the invention made by the inventor has been specifically described based on the embodiment. However, the present invention is not limited to the embodiment, and can be variously modified without departing from the gist thereof. Of course.

For example, the present invention is not limited to a glass substrate of an active matrix type liquid crystal display device, but can be applied to a wet processing technique used for a glass substrate of a time division type liquid crystal display device.

Further, the present invention can be applied to a wet processing technique for a semiconductor substrate constituting a semiconductor wafer.

Further, the present invention can be applied to a wet processing technique for a printed wiring board.

Further, the present invention can be applied to a wet processing technique for a transparent glass substrate such as a reticle or a photomask used for a photolithography technique or an optical lens.

Further, in the present invention, a wet processing tank may be configured by connecting different wet processing sections vertically above and below a shutter section, and the upper and lower wet processing sections may be configured as liquid tank sections.

〔The invention's effect〕

The effects obtained by the representative inventions among the inventions disclosed in the present application will be briefly described as follows.

In the wet processing technology, the control of the wet processing can be reliably performed.

Further, in the wet processing technology, the size of the wet processing apparatus can be reduced.

Further, in the wet processing technology, it is possible to achieve mass production of the wet processing and to reduce the size of the wet processing apparatus.

In the wet processing technology, the size of the substrate holding jig can be reduced, and the wet processing apparatus can be downsized.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram showing an outline of a wet processing apparatus provided with an integrated automatic line system for wet processing according to Embodiment III of the present invention, and FIG. 2 is a schematic diagram of wet processing according to Embodiment I of the present invention. FIG. 3 is a schematic configuration diagram showing an outline of a wet processing apparatus provided with an integrated automation line system. FIG. 3 is a perspective view of a main part showing a front part of a development processing section of the wet processing apparatus. FIG. 5 is an enlarged perspective view of a main part of the wet processing apparatus shown in FIG. 5, FIG. 5 is a front view of a substrate holding jig used in the wet processing apparatus, FIG. FIG. 7 is a front view of an elevating device of the wet processing apparatus, FIG. 8 is a partial sectional perspective view of a wet processing tank of the wet processing apparatus, and FIG. 9 is a schematic view of a wet processing tank of the wet processing apparatus. Cross section, Fig. 10 is the front FIG. 11 is a cross-sectional view of a main part of an active matrix type color liquid crystal display device in which a wet processing is actually performed by a wet processing apparatus. FIG. 11 is equipped with an integrated wet processing line system which is Embodiment II of the present invention. FIG. 12 is a partial perspective view of a wet processing apparatus, FIG. FIG. 14 is a schematic cross-sectional view of a wet processing tank of the wet processing apparatus having the integrated wet processing line system that is Embodiment IV of the present invention, and FIG. 1 is a schematic sectional view of a main part of a wet processing apparatus provided with a line system for automatic wet processing which is Embodiment V of the present invention. In the figure, 1, 12, 23, 38 ... loader or unloader, 2 to 9, 13
~ 22,24 ~ 36 ... wet treatment tank, 10,11 ... bake oven,
15D ………………………………………………………………………………………… …………………………………………………………………………………………………………………………………… Bottom boards?
G ... holding member, 41 ... elevating device, 41A ... vertical moving table,
41B: jig support portion, 42: transport device, 42A: unit moving member, 42B: transport finger portion, 42C: connecting member, 42
D, 42E: drive device, 43: selective transfer device, 44: shutter device, 44A: shutter unit, SUB: transparent glass substrate (substrate to be processed).

Claims (3)

(57) [Claims] 1. A wet processing apparatus for sequentially performing wet processing on substrates conveyed one by one, comprising a first wet processing apparatus and a second wet processing apparatus sequentially laminated from the surface side.
A wet treatment device, wherein the first wet treatment device is configured to be filled with a wet treatment liquid for immersing the substrate that is lowered through the inside of the second wet treatment device. The cleaning liquid is sprayed onto the substrate raised from the one wet processing apparatus in a shower shape, and the cleaning liquid is sprayed on the boundary between the first wet processing apparatus and the second wet processing apparatus when the cleaning liquid is sprayed. Is provided with a shutter unit for preventing the substrate from falling into the first wet processing apparatus. Further, the substrate is lowered and raised by making the direction perpendicular to the front and back surfaces substantially coincide with the direction of gravity. In addition, the cleaning liquid sprayed in a shower shape is configured to be sprayed from each side of the front and back surfaces of the substrate. Wet processing equipment. 2. The wet processing apparatus according to claim 1, wherein the wet processing liquid is a developing liquid or an etching liquid. 3. The liquid crystal display device according to claim 1, wherein the substrate is a transparent substrate constituting a liquid crystal display device having a pair of transparent substrates disposed to face each other with a liquid crystal interposed therebetween. Item 3. The wet treatment device according to any one of Items 2 and 3.