JP2521485Y2 - 半導体ウエハ用カッター - Google Patents
半導体ウエハ用カッターInfo
- Publication number
- JP2521485Y2 JP2521485Y2 JP1990091583U JP9158390U JP2521485Y2 JP 2521485 Y2 JP2521485 Y2 JP 2521485Y2 JP 1990091583 U JP1990091583 U JP 1990091583U JP 9158390 U JP9158390 U JP 9158390U JP 2521485 Y2 JP2521485 Y2 JP 2521485Y2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- semiconductor wafer
- line
- cross
- recess
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 44
- 238000003825 pressing Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 description 9
- 238000005520 cutting process Methods 0.000 description 8
- 238000005452 bending Methods 0.000 description 6
- 238000003776 cleavage reaction Methods 0.000 description 6
- 230000007017 scission Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 229910000851 Alloy steel Inorganic materials 0.000 description 1
- 229920001875 Ebonite Polymers 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- -1 or the like Substances 0.000 description 1
- 229920006327 polystyrene foam Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 229910000601 superalloy Inorganic materials 0.000 description 1
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1990091583U JP2521485Y2 (ja) | 1990-09-03 | 1990-09-03 | 半導体ウエハ用カッター |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1990091583U JP2521485Y2 (ja) | 1990-09-03 | 1990-09-03 | 半導体ウエハ用カッター |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0451137U JPH0451137U (enrdf_load_stackoverflow) | 1992-04-30 |
JP2521485Y2 true JP2521485Y2 (ja) | 1996-12-25 |
Family
ID=31827358
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1990091583U Expired - Lifetime JP2521485Y2 (ja) | 1990-09-03 | 1990-09-03 | 半導体ウエハ用カッター |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2521485Y2 (enrdf_load_stackoverflow) |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH028888U (enrdf_load_stackoverflow) * | 1988-06-30 | 1990-01-19 |
-
1990
- 1990-09-03 JP JP1990091583U patent/JP2521485Y2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH0451137U (enrdf_load_stackoverflow) | 1992-04-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |