JP2516571Y2 - 画像アレイ - Google Patents
画像アレイInfo
- Publication number
- JP2516571Y2 JP2516571Y2 JP40571290U JP40571290U JP2516571Y2 JP 2516571 Y2 JP2516571 Y2 JP 2516571Y2 JP 40571290 U JP40571290 U JP 40571290U JP 40571290 U JP40571290 U JP 40571290U JP 2516571 Y2 JP2516571 Y2 JP 2516571Y2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- wide
- light emitting
- light
- protruding portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000005530 etching Methods 0.000 description 20
- 238000009792 diffusion process Methods 0.000 description 13
- 230000002265 prevention Effects 0.000 description 8
- 238000006073 displacement reaction Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000002184 metal Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Exposure Or Original Feeding In Electrophotography (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP40571290U JP2516571Y2 (ja) | 1990-12-29 | 1990-12-29 | 画像アレイ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP40571290U JP2516571Y2 (ja) | 1990-12-29 | 1990-12-29 | 画像アレイ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0492657U JPH0492657U (enrdf_load_stackoverflow) | 1992-08-12 |
| JP2516571Y2 true JP2516571Y2 (ja) | 1996-11-06 |
Family
ID=31883091
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP40571290U Expired - Fee Related JP2516571Y2 (ja) | 1990-12-29 | 1990-12-29 | 画像アレイ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2516571Y2 (enrdf_load_stackoverflow) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6138612B2 (ja) | 2013-07-17 | 2017-05-31 | シャープ株式会社 | 用紙搬送装置、原稿送り装置及び画像形成装置 |
-
1990
- 1990-12-29 JP JP40571290U patent/JP2516571Y2/ja not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6138612B2 (ja) | 2013-07-17 | 2017-05-31 | シャープ株式会社 | 用紙搬送装置、原稿送り装置及び画像形成装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0492657U (enrdf_load_stackoverflow) | 1992-08-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8101960B2 (en) | Nitride light emitting device and manufacturing method thereof | |
| US5821567A (en) | High-resolution light-sensing and light-emitting diode array | |
| JPH0997922A (ja) | 発光素子 | |
| JPWO2017154973A1 (ja) | 半導体発光素子およびその製造方法 | |
| KR20010088929A (ko) | AlGaInN계 반도체 LED 소자 및 그 제조 방법 | |
| US6583446B1 (en) | Array of light-emitting elements and emission-altering elements | |
| JP2516571Y2 (ja) | 画像アレイ | |
| CN108574028B (zh) | 发光二极管 | |
| US6384429B1 (en) | Light-emitting semiconductor device with reduced obstructions to light emission | |
| US6909122B2 (en) | Semiconductor light-emitting device with isolation trenches, and method of fabricating same | |
| JPH10173230A (ja) | 発光素子 | |
| CA2368720A1 (en) | Light-emitting thyristor matrix array | |
| JPH11186594A (ja) | 発光ダイオードアレイ | |
| KR910006707B1 (ko) | 발광다이오드 및 제조방법 | |
| WO2005093859A1 (ja) | 発光ダイオードアレイ、発光ダイオード及びプリンタヘッド | |
| CN113906575A (zh) | 具有连接区域的光电子半导体器件和制造光电子半导体器件的方法 | |
| JP2003101065A (ja) | 発光ダイオード及びその製造方法 | |
| KR20060069375A (ko) | 반도체 엘이디 소자 및 그 제조 방법 | |
| JPH07254731A (ja) | 発光素子 | |
| KR920000329B1 (ko) | 발광소자 어레이 | |
| JPH06169104A (ja) | 半導体発光装置及びその製造方法 | |
| JPH06196752A (ja) | 半導体発光装置 | |
| JP2000022223A (ja) | Ｌｅｄアレイ及びそれを用いた光プリントヘッド | |
| US6407410B1 (en) | Semiconductor optical device | |
| JP2555305Y2 (ja) | 発光ダイオードアレイ |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |