JP2507709Y2 - 液相結晶成長装置 - Google Patents
液相結晶成長装置Info
- Publication number
- JP2507709Y2 JP2507709Y2 JP1986157623U JP15762386U JP2507709Y2 JP 2507709 Y2 JP2507709 Y2 JP 2507709Y2 JP 1986157623 U JP1986157623 U JP 1986157623U JP 15762386 U JP15762386 U JP 15762386U JP 2507709 Y2 JP2507709 Y2 JP 2507709Y2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- solution
- crystal growth
- dummy
- reservoir
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 title claims description 24
- 239000007791 liquid phase Substances 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims description 104
- 239000004973 liquid crystal related substance Substances 0.000 claims description 10
- 125000006850 spacer group Chemical group 0.000 description 13
- 230000002093 peripheral effect Effects 0.000 description 6
- 239000011800 void material Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986157623U JP2507709Y2 (ja) | 1986-10-14 | 1986-10-14 | 液相結晶成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986157623U JP2507709Y2 (ja) | 1986-10-14 | 1986-10-14 | 液相結晶成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6364028U JPS6364028U (cs) | 1988-04-27 |
| JP2507709Y2 true JP2507709Y2 (ja) | 1996-08-21 |
Family
ID=31080343
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1986157623U Expired - Lifetime JP2507709Y2 (ja) | 1986-10-14 | 1986-10-14 | 液相結晶成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2507709Y2 (cs) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5931972B2 (ja) * | 1977-06-21 | 1984-08-06 | 富士通株式会社 | 液相エピタキシヤル成長法 |
-
1986
- 1986-10-14 JP JP1986157623U patent/JP2507709Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6364028U (cs) | 1988-04-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2002334973A5 (cs) | ||
| JP2507709Y2 (ja) | 液相結晶成長装置 | |
| JPS6023496B2 (ja) | エピタキシヤル成長法およびボ−ト | |
| JPS621258Y2 (cs) | ||
| US4535720A (en) | Liquid phase epitaxy apparatus | |
| JPS63111611A (ja) | 半導体装置の製造方法 | |
| JPH02205339A (ja) | 半導体装置の製造方法 | |
| JPS63177960U (cs) | ||
| JPS58119633A (ja) | 半導体結晶の製造方法及びその装置 | |
| JPH0445238Y2 (cs) | ||
| JPH03257093A (ja) | 液相エピタキシャル成長法および液相エピタキシャル成長装置 | |
| JPS59104121A (ja) | ３−５族化合物半導体液相エピタキシヤル成長方法およびこれに用いられる半導体基板支持装置 | |
| JPS5991729U (ja) | 液相エピタキシヤル成長装置 | |
| JP2669340B2 (ja) | 液相エピタキシャル成長装置 | |
| JPH0523583Y2 (cs) | ||
| JPS628008B2 (cs) | ||
| JPS5816524A (ja) | 液相エピタキシヤル成長方法 | |
| JPS63110578U (cs) | ||
| JPS59129882U (ja) | 液相エピタキシヤル成長装置 | |
| JPS6153192A (ja) | 液相エピタキシヤル成長方法 | |
| JPS60140888A (ja) | 半導体レ−ザの製造方法 | |
| JPH0369227U (cs) | ||
| JPH0219620B2 (cs) | ||
| JPS62216991A (ja) | スライド式液相成長法 | |
| JPS6244437U (cs) |