JPH0445238Y2 - - Google Patents
Info
- Publication number
- JPH0445238Y2 JPH0445238Y2 JP1985158397U JP15839785U JPH0445238Y2 JP H0445238 Y2 JPH0445238 Y2 JP H0445238Y2 JP 1985158397 U JP1985158397 U JP 1985158397U JP 15839785 U JP15839785 U JP 15839785U JP H0445238 Y2 JPH0445238 Y2 JP H0445238Y2
- Authority
- JP
- Japan
- Prior art keywords
- slide
- growth
- solution
- substrate
- boat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1985158397U JPH0445238Y2 (cs) | 1985-10-15 | 1985-10-15 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1985158397U JPH0445238Y2 (cs) | 1985-10-15 | 1985-10-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6265832U JPS6265832U (cs) | 1987-04-23 |
JPH0445238Y2 true JPH0445238Y2 (cs) | 1992-10-23 |
Family
ID=31081846
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1985158397U Expired JPH0445238Y2 (cs) | 1985-10-15 | 1985-10-15 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0445238Y2 (cs) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5267571A (en) * | 1975-12-03 | 1977-06-04 | Hitachi Ltd | Crystallization method for semiconductor |
JPS567999A (en) * | 1979-06-28 | 1981-01-27 | Boeicho Gijutsu Kenkyu Honbuch | Method of floating up underwater linking body |
JPS56161639A (en) * | 1980-05-16 | 1981-12-12 | Fujitsu Ltd | Method of epitaxially growing in liquid phase |
JPS5756925A (en) * | 1980-09-20 | 1982-04-05 | Fujitsu Ltd | Liquid phase epitaxially growing method and device for gallium arsenide and /or aluminum gallium arsenide |
-
1985
- 1985-10-15 JP JP1985158397U patent/JPH0445238Y2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS6265832U (cs) | 1987-04-23 |
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