JP2025514693A5 - - Google Patents
Info
- Publication number
- JP2025514693A5 JP2025514693A5 JP2024560668A JP2024560668A JP2025514693A5 JP 2025514693 A5 JP2025514693 A5 JP 2025514693A5 JP 2024560668 A JP2024560668 A JP 2024560668A JP 2024560668 A JP2024560668 A JP 2024560668A JP 2025514693 A5 JP2025514693 A5 JP 2025514693A5
- Authority
- JP
- Japan
- Prior art keywords
- block
- filling process
- metal filling
- opening
- contact plug
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202263332622P | 2022-04-19 | 2022-04-19 | |
| US63/332,622 | 2022-04-19 | ||
| PCT/US2023/015640 WO2023204918A1 (en) | 2022-04-19 | 2023-03-20 | Contact formation process for cmos devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2025514693A JP2025514693A (ja) | 2025-05-09 |
| JP2025514693A5 true JP2025514693A5 (https=) | 2026-03-27 |
Family
ID=88420383
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024560668A Pending JP2025514693A (ja) | 2022-04-19 | 2023-03-20 | Ｃｍｏｓデバイス用のコンタクト形成プロセス |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20230377997A1 (https=) |
| EP (1) | EP4511874A4 (https=) |
| JP (1) | JP2025514693A (https=) |
| KR (1) | KR20230149249A (https=) |
| CN (1) | CN118891712A (https=) |
| TW (1) | TW202343548A (https=) |
| WO (1) | WO2023204918A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12431360B2 (en) * | 2023-07-18 | 2025-09-30 | Applied Materials, Inc. | Selective etching between silicon-and-germanium-containing materials with varying germanium concentrations |
| US12394631B2 (en) * | 2023-09-29 | 2025-08-19 | Applied Materials, Inc. | Selective etching of silicon-and-germanium-containing materials with increased surface purities |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6596577B2 (en) * | 1998-08-25 | 2003-07-22 | Micron Technology, Inc. | Semiconductor processing methods of forming dynamic random access memory (DRAM) circuitry |
| US20090004850A1 (en) * | 2001-07-25 | 2009-01-01 | Seshadri Ganguli | Process for forming cobalt and cobalt silicide materials in tungsten contact applications |
| US6703279B2 (en) * | 2002-01-04 | 2004-03-09 | Promos Technologies, Inc. | Semiconductor device having contact of Si-Ge combined with cobalt silicide |
| US7863201B2 (en) * | 2008-03-24 | 2011-01-04 | Samsung Electronics Co., Ltd. | Methods of forming field effect transistors having silicided source/drain contacts with low contact resistance |
| US9576809B2 (en) * | 2013-11-04 | 2017-02-21 | Applied Materials, Inc. | Etch suppression with germanium |
| US10297586B2 (en) * | 2015-03-09 | 2019-05-21 | Monolithic 3D Inc. | Methods for processing a 3D semiconductor device |
| US10685870B2 (en) * | 2017-08-30 | 2020-06-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method of manufacture |
| CN111902912A (zh) * | 2018-03-26 | 2020-11-06 | 朗姆研究公司 | 用于金属互连层的中间层 |
| US11232947B1 (en) * | 2020-09-01 | 2022-01-25 | Taiwan Semiconductor Manufacturing Company Limited | Ammonium fluoride pre-clean protection |
-
2023
- 2023-03-20 CN CN202380028968.2A patent/CN118891712A/zh active Pending
- 2023-03-20 WO PCT/US2023/015640 patent/WO2023204918A1/en not_active Ceased
- 2023-03-20 JP JP2024560668A patent/JP2025514693A/ja active Pending
- 2023-03-20 US US18/123,783 patent/US20230377997A1/en active Pending
- 2023-03-20 EP EP23792310.7A patent/EP4511874A4/en active Pending
- 2023-03-31 TW TW112112510A patent/TW202343548A/zh unknown
- 2023-04-17 KR KR1020230049966A patent/KR20230149249A/ko active Pending
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