JP2025512614A - 選択的堆積のための高純度アルキン類 - Google Patents

選択的堆積のための高純度アルキン類 Download PDF

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Publication number
JP2025512614A
JP2025512614A JP2024550557A JP2024550557A JP2025512614A JP 2025512614 A JP2025512614 A JP 2025512614A JP 2024550557 A JP2024550557 A JP 2024550557A JP 2024550557 A JP2024550557 A JP 2024550557A JP 2025512614 A JP2025512614 A JP 2025512614A
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JP
Japan
Prior art keywords
alkynes
high purity
plasma
ppm
purity
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Pending
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JP2024550557A
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English (en)
Japanese (ja)
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JP2025512614A5 (https=
Inventor
クロフ・クリストファー・アール
ソード・クリストファー・ジェイ
ホプキンス・クリストファー・デイヴィッド
イワノフ・セルゲイ・ヴェー
デレチケイ・アグネス
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Merck Patent GmbH
Sigma Aldrich Co LLC
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Merck Patent GmbH
Sigma Aldrich Co LLC
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Application filed by Merck Patent GmbH, Sigma Aldrich Co LLC filed Critical Merck Patent GmbH
Publication of JP2025512614A publication Critical patent/JP2025512614A/ja
Publication of JP2025512614A5 publication Critical patent/JP2025512614A5/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C11/00—Aliphatic unsaturated hydrocarbons
    • C07C11/22—Aliphatic unsaturated hydrocarbons containing carbon-to-carbon triple bonds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45534—Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Formation Of Insulating Films (AREA)
JP2024550557A 2022-02-25 2023-02-23 選択的堆積のための高純度アルキン類 Pending JP2025512614A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202263268553P 2022-02-25 2022-02-25
US63/268,553 2022-02-25
PCT/US2023/063089 WO2023164524A1 (en) 2022-02-25 2023-02-23 High-purity alkynes for selective deposition

Publications (2)

Publication Number Publication Date
JP2025512614A true JP2025512614A (ja) 2025-04-18
JP2025512614A5 JP2025512614A5 (https=) 2025-12-02

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JP2024550557A Pending JP2025512614A (ja) 2022-02-25 2023-02-23 選択的堆積のための高純度アルキン類

Country Status (8)

Country Link
US (1) US12503760B2 (https=)
EP (2) EP4707426A3 (https=)
JP (1) JP2025512614A (https=)
KR (2) KR20250172900A (https=)
CN (1) CN118742531A (https=)
IL (2) IL314348B1 (https=)
TW (1) TW202342800A (https=)
WO (1) WO2023164524A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4707426A3 (en) 2022-02-25 2026-05-06 Merck Patent GmbH High-purity alkynes for selective deposition

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20200347493A1 (en) * 2019-05-05 2020-11-05 Applied Materials, Inc. Reverse Selective Deposition
WO2021141876A1 (en) * 2020-01-10 2021-07-15 Applied Materials, Inc. Catalyst enhanced seamless ruthenium gap fill
WO2021183728A1 (en) * 2020-03-11 2021-09-16 Applied Materials, Inc. Gap fill methods using catalyzed deposition
WO2022108710A1 (en) * 2020-10-27 2022-05-27 Applied Materials, Inc. Area-selective atomic layer deposition of passivation layers

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR642170A (fr) 1926-10-14 1928-08-22 Procédé de fabrication d'hydrocarbures à partir du carbure de calcium
BE790434A (fr) * 1971-10-21 1973-04-24 Sherwin Williams Co Procede de synthese d'alcynes par dehydrohalogenation
DD240198A1 (de) * 1985-08-12 1986-10-22 Akad Wissenschaften Ddr Verfahren zur katalytischen cyclisierung von alkinen
US20040102647A1 (en) 2000-08-28 2004-05-27 Christian Everett Acetaldehyde dehydration to produce ethyne
US8993055B2 (en) * 2005-10-27 2015-03-31 Asm International N.V. Enhanced thin film deposition
CN101495672B (zh) * 2006-11-02 2011-12-07 高级技术材料公司 对于金属薄膜的cvd/ald有用的锑及锗复合物
US8642797B2 (en) * 2010-02-25 2014-02-04 Air Products And Chemicals, Inc. Amidate precursors for depositing metal containing films
CN102701896B (zh) * 2012-06-06 2014-06-25 西南石油大学 一种用于乙炔净化的复合溶剂及其净化方法
US20160064275A1 (en) 2014-08-27 2016-03-03 Applied Materials, Inc. Selective Deposition With Alcohol Selective Reduction And Protection
CN112301373A (zh) * 2020-10-24 2021-02-02 西北工业大学 一种电催化选择性还原烯烃中炔烃杂质的方法
CN113563164B (zh) * 2021-09-02 2024-01-09 南华大学 一种炔酮类化合物的制备方法
EP4707426A3 (en) 2022-02-25 2026-05-06 Merck Patent GmbH High-purity alkynes for selective deposition

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20200347493A1 (en) * 2019-05-05 2020-11-05 Applied Materials, Inc. Reverse Selective Deposition
WO2021141876A1 (en) * 2020-01-10 2021-07-15 Applied Materials, Inc. Catalyst enhanced seamless ruthenium gap fill
WO2021183728A1 (en) * 2020-03-11 2021-09-16 Applied Materials, Inc. Gap fill methods using catalyzed deposition
WO2022108710A1 (en) * 2020-10-27 2022-05-27 Applied Materials, Inc. Area-selective atomic layer deposition of passivation layers

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
ZABA,TOMASZ ET AL., J. AM. CHEM. SOC., vol. 136, JPN6026014220, 2014, pages 11918 - 11921, ISSN: 0005840605 *
ZHANG, YI-QI ET AL., NATURE COMMUNICATIONS, vol. 3:1286, JPN6026014219, 2012, pages 1 - 8, ISSN: 0005840606 *

Also Published As

Publication number Publication date
TW202342800A (zh) 2023-11-01
IL314348B1 (en) 2026-04-01
KR20250172900A (ko) 2025-12-09
CN118742531A (zh) 2024-10-01
WO2023164524A1 (en) 2023-08-31
KR20240154023A (ko) 2024-10-24
EP4707426A3 (en) 2026-05-06
IL314348A (en) 2024-09-01
IL326838A (en) 2026-04-01
US20250115992A1 (en) 2025-04-10
EP4482816A1 (en) 2025-01-01
US12503760B2 (en) 2025-12-23
EP4707426A2 (en) 2026-03-11

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