KR20250172900A - 선택적 증착을 위한 고순도 알킨 - Google Patents

선택적 증착을 위한 고순도 알킨

Info

Publication number
KR20250172900A
KR20250172900A KR1020257039634A KR20257039634A KR20250172900A KR 20250172900 A KR20250172900 A KR 20250172900A KR 1020257039634 A KR1020257039634 A KR 1020257039634A KR 20257039634 A KR20257039634 A KR 20257039634A KR 20250172900 A KR20250172900 A KR 20250172900A
Authority
KR
South Korea
Prior art keywords
alkyne
purity
metal
ppm
high purity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257039634A
Other languages
English (en)
Korean (ko)
Inventor
크리스토퍼 알 클로그
크리스토퍼 제이 토드
크리스토퍼 데이비드 홉킨스
세르게이 브이 이바노프
아그네스 데렉스케이
Original Assignee
메르크 파텐트 게엠베하
버슘머트리얼즈 유에스, 엘엘씨
시그마-알드리치 컴퍼니 엘엘씨
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 메르크 파텐트 게엠베하, 버슘머트리얼즈 유에스, 엘엘씨, 시그마-알드리치 컴퍼니 엘엘씨 filed Critical 메르크 파텐트 게엠베하
Publication of KR20250172900A publication Critical patent/KR20250172900A/ko
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C11/00—Aliphatic unsaturated hydrocarbons
    • C07C11/22—Aliphatic unsaturated hydrocarbons containing carbon-to-carbon triple bonds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45534—Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
KR1020257039634A 2022-02-25 2023-02-23 선택적 증착을 위한 고순도 알킨 Pending KR20250172900A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US202263268553P 2022-02-25 2022-02-25
US63/268,553 2022-02-25
KR1020247031220A KR20240154023A (ko) 2022-02-25 2023-02-23 선택적 증착을 위한 고순도 알킨
PCT/US2023/063089 WO2023164524A1 (en) 2022-02-25 2023-02-23 High-purity alkynes for selective deposition

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020247031220A Division KR20240154023A (ko) 2022-02-25 2023-02-23 선택적 증착을 위한 고순도 알킨

Publications (1)

Publication Number Publication Date
KR20250172900A true KR20250172900A (ko) 2025-12-09

Family

ID=85778822

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020257039634A Pending KR20250172900A (ko) 2022-02-25 2023-02-23 선택적 증착을 위한 고순도 알킨
KR1020247031220A Pending KR20240154023A (ko) 2022-02-25 2023-02-23 선택적 증착을 위한 고순도 알킨

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020247031220A Pending KR20240154023A (ko) 2022-02-25 2023-02-23 선택적 증착을 위한 고순도 알킨

Country Status (8)

Country Link
US (1) US12503760B2 (https=)
EP (2) EP4707426A2 (https=)
JP (1) JP2025512614A (https=)
KR (2) KR20250172900A (https=)
CN (1) CN118742531A (https=)
IL (2) IL326838A (https=)
TW (1) TW202342800A (https=)
WO (1) WO2023164524A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118742531A (zh) 2022-02-25 2024-10-01 默克专利股份有限公司 用于选择性沉积的高纯度炔烃

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR642170A (fr) * 1926-10-14 1928-08-22 Procédé de fabrication d'hydrocarbures à partir du carbure de calcium
BE790434A (fr) * 1971-10-21 1973-04-24 Sherwin Williams Co Procede de synthese d'alcynes par dehydrohalogenation
DD240198A1 (de) * 1985-08-12 1986-10-22 Akad Wissenschaften Ddr Verfahren zur katalytischen cyclisierung von alkinen
US20040102647A1 (en) 2000-08-28 2004-05-27 Christian Everett Acetaldehyde dehydration to produce ethyne
US8993055B2 (en) * 2005-10-27 2015-03-31 Asm International N.V. Enhanced thin film deposition
CN102352488B (zh) * 2006-11-02 2016-04-06 诚实公司 对于金属薄膜的cvd/ald有用的锑及锗复合物
US8642797B2 (en) * 2010-02-25 2014-02-04 Air Products And Chemicals, Inc. Amidate precursors for depositing metal containing films
CN102701896B (zh) * 2012-06-06 2014-06-25 西南石油大学 一种用于乙炔净化的复合溶剂及其净化方法
US20160064275A1 (en) 2014-08-27 2016-03-03 Applied Materials, Inc. Selective Deposition With Alcohol Selective Reduction And Protection
US20200347493A1 (en) 2019-05-05 2020-11-05 Applied Materials, Inc. Reverse Selective Deposition
CN112301373A (zh) * 2020-10-24 2021-02-02 西北工业大学 一种电催化选择性还原烯烃中炔烃杂质的方法
CN113563164B (zh) * 2021-09-02 2024-01-09 南华大学 一种炔酮类化合物的制备方法
CN118742531A (zh) 2022-02-25 2024-10-01 默克专利股份有限公司 用于选择性沉积的高纯度炔烃

Also Published As

Publication number Publication date
EP4482816A1 (en) 2025-01-01
IL326838A (en) 2026-04-01
CN118742531A (zh) 2024-10-01
IL314348B1 (en) 2026-04-01
TW202342800A (zh) 2023-11-01
US12503760B2 (en) 2025-12-23
IL314348A (en) 2024-09-01
JP2025512614A (ja) 2025-04-18
US20250115992A1 (en) 2025-04-10
EP4707426A2 (en) 2026-03-11
WO2023164524A1 (en) 2023-08-31
KR20240154023A (ko) 2024-10-24

Similar Documents

Publication Publication Date Title
US8357614B2 (en) Ruthenium-containing precursors for CVD and ALD
KR20230152748A (ko) 박막 증착 공정에서 금속 옥시할로겐화물 전구체로부터 산소를 제거하기 위한 시약
KR20060134180A (ko) 루테늄 막 및 산화루테늄 막의 제조 방법
US9121093B2 (en) Bis-ketoiminate copper precursors for deposition of copper-containing films and methods thereof
KR20250172900A (ko) 선택적 증착을 위한 고순도 알킨
JP2025500345A (ja) ビスマス含有膜の堆積のための前駆体
EP2065390A1 (en) Metal organic compounds containing an amidinate ligand and their use for vapour phase deposition of metal containing thin films
US20260035396A1 (en) Liquid molybdenum bis(arene) compositions for deposition of molybdenum-containing films
KR20260052107A (ko) 선택적 증착을 위한 배합물
EP4430226A1 (en) Molybdenum precursor compounds
WO2025036804A1 (en) Formulations for selective deposition
KR20250103680A (ko) 선택적 증착을 위한 고순도 알키닐 아민
WO2022243274A1 (en) Selective deposition of ruthenium film by utilizing ru(i) precursors
KR20240167067A (ko) Cvd 및 ald 적용을 위한 인계 리간드를 갖는 금속 카르보닐 착물
WO2025252680A1 (en) Metal compounds for ald applications
KR20240128699A (ko) 비스무트 산화물 함유 박막 증착용 호모렙틱 비스무트 전구체

Legal Events

Date Code Title Description
A16 Divisional, continuation or continuation in part application filed

Free format text: ST27 STATUS EVENT CODE: A-0-1-A10-A16-DIV-PA0104 (AS PROVIDED BY THE NATIONAL OFFICE)

PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A16-div-PA0104

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

Q12 Application published

Free format text: ST27 STATUS EVENT CODE: A-1-1-Q10-Q12-NAP-PG1501 (AS PROVIDED BY THE NATIONAL OFFICE)