JP2025021163A - 電界効果トランジスタ - Google Patents

電界効果トランジスタ Download PDF

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Publication number
JP2025021163A
JP2025021163A JP2023124922A JP2023124922A JP2025021163A JP 2025021163 A JP2025021163 A JP 2025021163A JP 2023124922 A JP2023124922 A JP 2023124922A JP 2023124922 A JP2023124922 A JP 2023124922A JP 2025021163 A JP2025021163 A JP 2025021163A
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JP
Japan
Prior art keywords
layer
contact
layers
inter
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023124922A
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English (en)
Japanese (ja)
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JP2025021163A5 (https=
Inventor
秀史 高谷
Hideshi Takatani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Priority to JP2023124922A priority Critical patent/JP2025021163A/ja
Priority to PCT/JP2024/018533 priority patent/WO2025027977A1/ja
Priority to CN202480041184.8A priority patent/CN121549072A/zh
Publication of JP2025021163A publication Critical patent/JP2025021163A/ja
Publication of JP2025021163A5 publication Critical patent/JP2025021163A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs

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  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2023124922A 2023-07-31 2023-07-31 電界効果トランジスタ Pending JP2025021163A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2023124922A JP2025021163A (ja) 2023-07-31 2023-07-31 電界効果トランジスタ
PCT/JP2024/018533 WO2025027977A1 (ja) 2023-07-31 2024-05-20 電界効果トランジスタ
CN202480041184.8A CN121549072A (zh) 2023-07-31 2024-05-20 场效应晶体管

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2023124922A JP2025021163A (ja) 2023-07-31 2023-07-31 電界効果トランジスタ

Publications (2)

Publication Number Publication Date
JP2025021163A true JP2025021163A (ja) 2025-02-13
JP2025021163A5 JP2025021163A5 (https=) 2025-05-14

Family

ID=94395044

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023124922A Pending JP2025021163A (ja) 2023-07-31 2023-07-31 電界効果トランジスタ

Country Status (3)

Country Link
JP (1) JP2025021163A (https=)
CN (1) CN121549072A (https=)
WO (1) WO2025027977A1 (https=)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4738562B2 (ja) 2000-03-15 2011-08-03 三菱電機株式会社 半導体装置の製造方法
JP5817816B2 (ja) * 2011-04-12 2015-11-18 株式会社デンソー 半導体装置の製造方法
CN113632238B (zh) * 2019-04-01 2024-08-02 三菱电机株式会社 半导体装置
CN114556588B (zh) * 2019-10-11 2025-08-19 株式会社电装 开关元件
JP7662431B2 (ja) * 2021-06-29 2025-04-15 株式会社豊田中央研究所 半導体装置

Also Published As

Publication number Publication date
CN121549072A (zh) 2026-02-17
WO2025027977A1 (ja) 2025-02-06

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