CN121549072A - 场效应晶体管 - Google Patents

场效应晶体管

Info

Publication number
CN121549072A
CN121549072A CN202480041184.8A CN202480041184A CN121549072A CN 121549072 A CN121549072 A CN 121549072A CN 202480041184 A CN202480041184 A CN 202480041184A CN 121549072 A CN121549072 A CN 121549072A
Authority
CN
China
Prior art keywords
layer
semiconductor substrate
contact
inter
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202480041184.8A
Other languages
English (en)
Chinese (zh)
Inventor
高谷秀史
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Publication of CN121549072A publication Critical patent/CN121549072A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CN202480041184.8A 2023-07-31 2024-05-20 场效应晶体管 Pending CN121549072A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023124922A JP2025021163A (ja) 2023-07-31 2023-07-31 電界効果トランジスタ
JP2023-124922 2023-07-31
PCT/JP2024/018533 WO2025027977A1 (ja) 2023-07-31 2024-05-20 電界効果トランジスタ

Publications (1)

Publication Number Publication Date
CN121549072A true CN121549072A (zh) 2026-02-17

Family

ID=94395044

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202480041184.8A Pending CN121549072A (zh) 2023-07-31 2024-05-20 场效应晶体管

Country Status (3)

Country Link
JP (1) JP2025021163A (https=)
CN (1) CN121549072A (https=)
WO (1) WO2025027977A1 (https=)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4738562B2 (ja) 2000-03-15 2011-08-03 三菱電機株式会社 半導体装置の製造方法
JP5817816B2 (ja) * 2011-04-12 2015-11-18 株式会社デンソー 半導体装置の製造方法
CN113632238B (zh) * 2019-04-01 2024-08-02 三菱电机株式会社 半导体装置
CN114556588B (zh) * 2019-10-11 2025-08-19 株式会社电装 开关元件
JP7662431B2 (ja) * 2021-06-29 2025-04-15 株式会社豊田中央研究所 半導体装置

Also Published As

Publication number Publication date
JP2025021163A (ja) 2025-02-13
WO2025027977A1 (ja) 2025-02-06

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