JP2024546067A5 - - Google Patents

Info

Publication number
JP2024546067A5
JP2024546067A5 JP2024530452A JP2024530452A JP2024546067A5 JP 2024546067 A5 JP2024546067 A5 JP 2024546067A5 JP 2024530452 A JP2024530452 A JP 2024530452A JP 2024530452 A JP2024530452 A JP 2024530452A JP 2024546067 A5 JP2024546067 A5 JP 2024546067A5
Authority
JP
Japan
Prior art keywords
thin film
pbse
nanostructure
crystal
iodine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024530452A
Other languages
English (en)
Japanese (ja)
Other versions
JP2024546067A (ja
Filing date
Publication date
Priority claimed from US17/988,326 external-priority patent/US12195874B2/en
Application filed filed Critical
Priority claimed from PCT/US2022/050328 external-priority patent/WO2023096823A1/en
Publication of JP2024546067A publication Critical patent/JP2024546067A/ja
Publication of JP2024546067A5 publication Critical patent/JP2024546067A5/ja
Pending legal-status Critical Current

Links

JP2024530452A 2021-11-23 2022-11-17 フォトニクス用途の化学浴堆積（ＣＢＤ）を用いることによるＰｂＳｅナノ構造の製造 Pending JP2024546067A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US202163282389P 2021-11-23 2021-11-23
US63/282,389 2021-11-23
US17/988,326 US12195874B2 (en) 2021-11-23 2022-11-16 Fabrication of PBSE nanostructures by employing chemical bath deposition (CBD) for photonics applications
US17/988,326 2022-11-16
PCT/US2022/050328 WO2023096823A1 (en) 2021-11-23 2022-11-17 Fabrication of pbse nanostructures by employing chemical bath deposition (cbd) for photonics applications

Publications (2)

Publication Number Publication Date
JP2024546067A JP2024546067A (ja) 2024-12-17
JP2024546067A5 true JP2024546067A5 (enExample) 2025-11-26

Family

ID=84982327

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024530452A Pending JP2024546067A (ja) 2021-11-23 2022-11-17 フォトニクス用途の化学浴堆積（ＣＢＤ）を用いることによるＰｂＳｅナノ構造の製造

Country Status (6)

Country Link
US (1) US20250146170A1 (enExample)
EP (1) EP4437595A1 (enExample)
JP (1) JP2024546067A (enExample)
KR (1) KR20240107357A (enExample)
TW (1) TW202327993A (enExample)
WO (1) WO2023096823A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025038252A1 (en) * 2023-08-17 2025-02-20 Illinois Tool Works Inc. Photodetector thin film with pbse nanostructures

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014137748A1 (en) * 2013-03-06 2014-09-12 The Board Of Regents Of The University Of Oklahoma Pb-salt mid-infrared detectors and method for making same

Similar Documents

Publication Publication Date Title
US10640866B2 (en) Process for the production of two-dimensional nanomaterials
JP2022510159A (ja) ダイヤモンド基板の製造方法
US20220028698A1 (en) Method for making semiconductor substrate and method for making semiconductor device
JPH05136062A (ja) 多結晶シリコン薄膜およびその低温形成法
JP2024546067A5 (enExample)
JP3965215B2 (ja) 半導体基材の製造方法
JP7740146B2 (ja) エピタキシャルウェーハの製造方法
US6339016B1 (en) Method and apparatus for forming an epitaxial silicon wafer with a denuded zone
JP2001044208A (ja) 半導体素子の欠陥補償方法
JP2010056483A (ja) 膜製造方法
JP4576201B2 (ja) 三酸化モリブデン層の作製方法
JPH09115833A (ja) 半導体素子のポリシリコン膜製造方法
TWI455186B (zh) Fabrication of metal - induced crystals by ion implantation
JP4321925B2 (ja) 半導体基材の製造方法
TWI774380B (zh) 基材的加工方法及半導體元件的製造方法
JP4372211B2 (ja) 半導体基材の製造方法
JP4527090B2 (ja) 半導体基材の製造方法
CN115602526B (zh) 一种二维半导体碲化钼薄膜的可控掺杂方法
WO2025041531A1 (ja) エピタキシャルウェーハの製造方法
JP7477407B2 (ja) 酸化ガリウム系半導体の製造方法
KR20260057032A (ko) 에피택셜 웨이퍼의 제조방법
TW202344699A (zh) 單晶半導體膜之製造方法、單晶半導體膜之積層膜之製造方法以及半導體元件
KR100738659B1 (ko) 니켈 할로겐 화합물 분위기를 이용한 다결정 규소박막의제조방법
CN116994957A (zh) p型氧化碲薄膜制备方法
Ngan et al. Preparation of the transparent conductive ZnO nano material by means of pulsed spray pyrolysis