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  • H10F77/00—Constructional details of devices covered by this subclass
  • H10F77/10—Semiconductor bodies
  • H10F77/12—Active materials
  • H10F77/127—Active materials comprising only Group IV-VI or only Group II-IV-VI chalcogenide materials, e.g. PbSnTe
  • H10F77/1275—Active materials comprising only Group IV-VI or only Group II-IV-VI chalcogenide materials, e.g. PbSnTe characterised by the dopants
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  • C30B19/00—Liquid-phase epitaxial-layer growth
  • C30B19/10—Controlling or regulating
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B82—NANOTECHNOLOGY
  • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
  • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B82—NANOTECHNOLOGY
  • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
  • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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  • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
  • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
  • C30B29/10—Inorganic compounds or compositions
  • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
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  • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
  • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
• • C—CHEMISTRY; METALLURGY
  • C30—CRYSTAL GROWTH
  • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
  • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
  • C30B33/02—Heat treatment
• • C—CHEMISTRY; METALLURGY
  • C30—CRYSTAL GROWTH
  • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
  • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
  • C30B33/08—Etching
  • C30B33/10—Etching in solutions or melts
• • H—ELECTRICITY
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  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
  • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
• • H—ELECTRICITY
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  • H10F71/00—Manufacture or treatment of devices covered by this subclass
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F77/00—Constructional details of devices covered by this subclass
  • H10F77/10—Semiconductor bodies
  • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
  • H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
  • H10F77/1433—Quantum dots
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F77/00—Constructional details of devices covered by this subclass
  • H10F77/10—Semiconductor bodies
  • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
  • H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
  • H10F77/1437—Quantum wires or nanorods

Definitions

• a system and/or method for a homogenous, single crystal, electrically conductive, and narrow 7 bandgap PbSe nanostructure is synthesized using a chemical bath deposition on, for example, quartz substrates, and includes a tunable iodine doping process to select the size and/or shape of the nanostructures.
• the single crystalline PbSe nanostructure can be exposed following an etching process, and the concentration and/or distribution of iodine across multiple PbSe nanostructures (e.g., on a quartz substrate) can be adjusted during post processing steps, including heat treatments.
• FIG. 1 illustrates an example method to process single crystalline Lead Selenide (PbSe) nanostructures, in accordance with an example embodiment of the disclosure
• FIG. 2A is an image of PbSe nanostructures, in accordance with aspects of this disclosure.
• FIG. 2B shows a matrix with a number of possible nanostructure angles or crystallographic orientations for the PbSe material, in accordance with aspects of this disclosure.
• FIG. 3A is an image of PbSe nanostructures produced by disclosed methods, in accordance with aspects of this disclosure.
• FIG. 3B is a detailed image of the PbSe nanostructures of FIG. 3 A, in accordance with aspects of this disclosure.
• FIG. 4 is a graph providing carrier concentration levels in a PbSe nanostructure, in accordance with aspects of this disclosure.
• FIGS. 5A and SB are graphs providing photo- luminescent measurement levels for PbSe nanostructure, in accordance with aspects of this disclosure.
• the PbSe nanostructure is created by a method to process single crystalline PbSe nanostructures consisting of one or more of substrate preparation, chemical preparation and mixing with solvent, chemical deposition (e.g., via chemical bath deposition), vacuum baking, thin film oxidation, thin film iodination, annealing, nanostructure isolation (e.g., chemical and/or electrochemical etching to remove oxide and a separation process), and/or post processing.
• chemical deposition e.g., via chemical bath deposition
• vacuum baking thin film oxidation, thin film iodination, annealing
• nanostructure isolation e.g., chemical and/or electrochemical etching to remove oxide and a separation process
• a homogenous, single crystal, electrically conductive, and narrow- bandgap PbSe nanostructure is synthesized using a chemical bath deposition on, for example, quartz substrates, and includes a tunable iodine doping process to select the size and/or shape of the nanostructures.
• the single crystalline PbSe nanostructure can be exposed following a nanostructure isolation process (e.g., an etching process), and the concentration and/or distribution of iodine across multiple PbSe nanostructures (e.g., on a quartz substrate) can be adjusted during post processing steps, including heat treatments.
• iodine- doped PbSe nanostructures are applied to thin film samples, which are synthesized using chemical bath deposition and techniques that include oxygen sensitization, iodination, and one or more post processes (e.g., heat treatments and/or baking).
• Disclosed PbSe nanostructures including methods of producing such nanostructures, thin films comprising the nanostructures, and applications employing such nanostructures, exhibit a correlation between the size, shape, orientation, and/or layer thickness of PbSe nanostructures and sensitivity of the sensor itself.
• the iodine- doped PbSe single crystallized nanostructures are created after a series of surface treatments, include one or more of chemical bath deposition, oxygen sensitization, iodine sensitization, post annealing, and/or an etching processes.
• nano refers to the nanometer (nm) scale of measurement, and may be used to describe structures, particles, distances, wavelengths, etc., measured in a. nano- scale.
• x and/or y means any element of the three- element set ⁇ (x), (y), (x, y) ⁇ .
• x, y, and/or z means any element of the seven- element set ⁇ (x), (y), (z), (x, y), (x, z), (y, z), (x, y, z) ⁇ .
• module refers to functions that can be implemented in hardware, software, firmware, or anv combination of one or more thereof.
• example or exemplary mean serving as a non- limiting example, instance, or illustration.
• a method of forming a single crystalline lead selenide (PbSe) nanostructure includes preparing a. substrate; preparing chemical lead and selenium precursors; depositing the precursors to the substrate via a chemical bath deposition (CBD) process, resulting in a thin film comprising a PbSe ahoy; vacuum baking the thin film at a temperature above 100°C to get rid of residual solvent; expose the thin film to an oxygenated gas to induce re- crystallization and produce an oxide passivation layer; doping the thin film with a vapor comprising a predetermined concentration of iodine for a predetermined time period; applying nanostructure isolation techniques using a chemical etchant (and/or an electrochemical etching process) to the thin film to uncover a single crystalline PbSe nanostructure underlying the oxide passivation layer and polycrystalline PbSe; and post processing the thin film with the uncovered single crystalline PbSe to redistribute
• the depositing yields two layers PbSe crystalline layer including a first, exposed layer comprising a polycrystalline PbSe oxide form substantially free of iodine; and a second, underlying layer comprising the single crystalline PbSe nanostructures comprising iodine, wherein an amount of iodine in the single crystalline PbSe is controlled by one or more of a time or a temperature during the doping.
• the depositing includes depositing the precursors for a first time to create the first layer during the CBD process; and depositing the precursors and a carrier solution having a predetermined amount of iodine for a second time to create the second layer during the CBD process.
• the method further includes varying a time for the deposition during the first or second time, the change in time corresponding to a change in a thickness or morphology of the single crystalline PbSe thin film.
• the method further includes annealing prior to etching.
• the first time or the second time is about 30 minutes.
• the first time or the second time can be varied depending on specification required.
• the oxygenated gas comprises a mixture of oxygen and nitrogen.
• the method further includes adjusting the threshold temperature to control of the crystallization of PbSe nanostructure, the threshold temperature corresponds to a size or a shape of the PbSe nanostructure.
• the PbSe nanostructure comprises one or more of a PbSe nanoprisms, a PbSe nanoplate, a PbSe nanoribbon, or a PbSe nanodisk.
• the PbSe nanostructure are formed underneath the oxide layer in a variety of different sizes that can be controlled upon fabrication parameters.
• the predetermined temperature corresponds to about 420°C, resulting in a generally rectangular shape of the nanostructures.
• substrate comprises a quartz substrate with one or more rough surfaces.
• the doping with iodine further comprises introducing an iodine vapor into the furnace using nitrogen gas as a carrier.
• the method further includes post processes by adjusting one of a temperature or a time of the post baking to control a size of the PbSe nanostructures and redistribution of iodine concentration.
• the method further includes controlling a rate, time, or temperature of a cooling process to control the shape of the PbSe nanostructures.
• the method further includes one or more additional annealing procedures including at a predetermined time or temperature to evenly or homogeneously distribute the dopants throughout PbSe matrix.
• the etching of the polycrystalline PbSe material employs a hydrogen fluoride (HF) solution or NaOH:IPA:DI water.
• HF hydrogen fluoride
• the polycrystalline crystal growth can occur by one of two general deposition mechanisms: ion-by- ion growth, or hydroxide cluster growth.
• a photoconductive thin film includes a substrate; and a plurality of single crystalline lead selenide (PbSe) nanoparticles arranged on the substrate, the nanoparticles containing a threshold amount of iodine dopant.
• PbSe lead selenide
• the thin film has an electrical property variable by photo or thermal excitation caused by electromagnetic radiation impinging on the thin film.
• the thin film has a circuit in electrical communication with the thin film.
• the circuit is configured to measure a change in the electrical property of the thin film in response to photo or thermal excitation caused by the electromagnetic radiation impinging on the thin film.
• the electromagnetic radiation includes infrared radiation.
• a colloidal synthesis Lead Selenium (PbSe) nanostructures e.g., nanoprisms, nanodisks, nanorods, etc.
• PbSe Lead Selenium
• methods for preparing photo- sensitive PbSe nanostructures for detection of electromagnetic energy e.g., infrared and/or mid- infrared (mid- IR) wavelengths).
• PbSe nanoparticles produced by the disclosed methods can be employed in photosensitive thin films for use as collectors and/or detectors, providing a low cost, nano- sized, single crystalline thin film for use in a variety of applications (e.g., infrared detectors, direct sensors, process control, gas analysis, defense, and/or temperature control).
• the disclosed PbSe nanoparticles can be employed in other applications, products, and/or use cases (e.g., beyond detection), including in the manufacture of solar cells, light emitting diodes, and/or lasers, as a non- limiting list of examples.
• PbSe is a polar semiconductor showing presenting both ionic and covalent chemical bonding, with electrons shared unequally by the nuclei forming these bonds. However, the covalent bonding is predominant in a resulting PbSe crystal.
• Crystalline PbSe has a face- centered cubic lattice structure, which may have a lattice constant of about 6.12 A (but could be smaller or greater, depending on desired characteristics).
• the lattice structure may have a direct energy bandgap of about 0.27 eV for bulk material at room temperature, and may possess an intrinsic carrier density of 3xlO i 6 cm' 3 (although smaller or greater bandgaps and/or carrier density may be presented, depending on desired characteristics).
• IR infrared
• PbSe offers detection at longer wavelengths in the IR spectrum, ranging from about 4 microns to about 6 microns.
• composition and manufacture of multi -junction semiconductors increases the overall cost of the device, due to increased material use and production complexity.
• PbSe has a narrow bad gap that allows optical absorption of a greater range of the solar spectrum; most notably in the low- infrared region, where some semiconductor photovoltaic cells cannot absorb.
• disclosed production of a PbSe nanostructure and corresponding thin film is significantly less expensive than conventional semiconducting materials used in photovoltaic cells.
• PbSe is a direct bandgap semiconductor that is capable of absorbing solar radiation in a material or layer with a thickness of as few as several microns; significantly thinner than conventional solar cells, even those with a more narrow optical absorption range.
• the disclosed PbSe nanostructure is relatively simple to manufacture in a large area at lower temperatures (e.g., in comparison to conventional semiconducting materials) by low cost fabrication techniques, such as chemical bath deposition.
• polycrystalline PbSe thin films are produced, which is a mixture of nanoparticles (e.g., including nanostructures, such as nanoprisms and/or nanodisks).
• nanoparticles e.g., including nanostructures, such as nanoprisms and/or nanodisks.
• Such thin films can be used to increase energy absorption from a greater range of the electromagnetic spectrum (e.g., the solar spectrum), while reducing the cost associated with manufacturing and/or maintenance of other semiconductor materials used for solar cell products.
• carrier multiplication is a process in which multiple excitons are generated from a single incident photon. For instance, a single incident photon generating up to seven excitons has been observed in PbSe quantum dots.
• PbSe nanostructures are provided which can effectively generate and separate these excitons and then contribute to an increase in the conversion efficiency of a solar cell, and/or sensitivity of a detector.
• the band gap of the PbSe increases with a decrease in size of the nanostructure; thus the effect of the quantum confinement allows for tuning of the bandgap in PbSe quantum dots, aiding in the targeted absorption of one or more specific regions of the electromagnetic spectrum.
• the disclosed PbSe nanostructures can be employed in a sensor for Carbon Dioxide (CO2) or Ammonia (NH3) measurement, which is a pail of essential environmental applications for monitoring air pollution.
• CO2 Carbon Dioxide
• NH3 Ammonia
• the PbSe nanostructure e.g., nanoprism
• a sensor employing the PbSe nanoprisms may be directly integrated into a small device, such as a smartphone or other device, to monitor air and/or environmental pollution in real-time indoors and outdoors.
• the disclosed sensor provides a higher degree of sensitivity, and thus detectivity, as well as cost effectiveness.
• an air pollution monitoring system employing the PbSe nanostructures can be miniaturized for integration with a variety of devices, including smartphones, personal medical devices, tablets, and/or wearable consumer products, as a list of non- limiting examples.
• Nanocrystals or nanostructures are typically isolated from their growth and preparation medium by the addition of polar solvents. Mechanically exfoliated lead chalcogenide nanostructures from the substrate are carefully transferred to a polar solvent container. Sedimentation by ultra- sonification and centrifugation in the solvent are used to collect the nanostructures.
• Other techniques may be employed to separate monodisperse nanostructures, such as Dieletrophoresis (DEP). This technique is based on the movement of dielectric or polarizable nanostructures in an inhomogeneous electrical field due to the interaction of the nanostructure’s dipole and spatial gradients of the electrical field.
• iodine sensitization can be carried out by a quartz tube furnace with a mixed gas constituted of a carrier solution (e.g., nitrogen) and an iodine vapor at a predetermined temperature (e.g., 450°C).
• Chemical etching is carried out in a mixed solution of hydrogen fluoride (HF) and deionized (DI) water (e.g., NaOH:IPA:DI), which may have a solution concentration of HF of 50: 1 (per volume ratio) and/or DI water of 1 :25:50 (per volume ratio).
• HF hydrogen fluoride
• DI deionized water
• the PbSe nanostructures, including nanoprisms are formed underneath the oxide PbSe phases with a variety of different sizes.
• the poly crystal line and/or amorphous PbSe layer or thin film can be formed first.
• the rate of PbSe film growth is largely dependent on the rate of release of Pb 2+ ions from the complex state, and the decomposition of Lead Acetate Trihydrate (C ⁇ HsCLPb-SHsO) and Selenourea (CH4N2Se).
• PbSe is formed when the ionic product of Pb 2+ and Se 2 " ions exceeds the solution solubility product of PbSe (e.g., at about 10’ 38 at 300K). Therefore, the concentration of lead and selenium ions is controlled during the film growth.
• lead chalcogenide in general, with Lead Acetate Trihydrate acting as the lead precursor, is complexed to control the release of the metal cation Pb 2+ -ions as well as to prevent the precipitation of Pb(OH)2.
• PbSe the hydrolysis of the chalcogenide precursor, Selenourea (CH4N2.Se), will provide the anions Se 2 "- ions.
• a lead chalcogenide will precipitate provided that the ionic product is greater than the solubility product (e.g., Ksp-lO’ 38 for PbSe at 300K).
• the polycrystalline crystal growth can occur by one of two general deposition mechanisms: ion-by- ion growth, or hydroxide cluster growth.
• Ion-by-ion growth occurs as a consequence of ionic reactions, typically when homogeneous nucleation occurs.
• collisions between ions will form nuclei, which are adsorbed onto the substrate, Ion-by-ion growth typically results in lager crystals, with the crystal size being directly proportional to film thickness.
• Hydroxide cluster growth occurs in the presence of a metal hydroxide. Thus, the deposition mechanism can occur if Pb(OH)? is present as either a precipitate or a colloid. Hydroxide cluster growth typically results in smaller crystals relative to ion-by-ion growth. Unlike ion- by- ion growth, film thickness does not greatly influence the crystal size from hydroxide cluster growth.
• Equation I results in precipitation of PbSe onto a substrate in solution.
• PbSe can be deposited by a variety of processing techniques, including pyrolysis, vacuum evaporation, sputtering, chemical vapor deposition (CVD), molecular-beam epitaxy (MBE ), and chemical bath deposition (CBD).
• CVD chemical vapor deposition
• MBE molecular-beam epitaxy
• CBD techniques offer specific advantageous in forming PbSe nanostructures, such as being a simple, low- cost technique executable at relatively low temperatures.
• a Lead Acetate solution, a Selenourea solution, and/or an Iodine solution are prepared separately, which may be done some time in advance (e.g., about 24 hours in advance).
• an initial amount e.g., about 455.2 grams
• a threshold amount e.g., about 800 grams
• Another vessel e.g., a 2000 ml beaker
• a predetermined amount of fluid e.g., 500 ml of DI water
• heated e.g., placed on a high setting on a hot plate
• the vessel with Lead Acetate is placed therein.
• the reading is about 64°C.
• the heat supply wall completely dissolve the Lead Acetate crystal within about 30 min.
• the bottle of the Lead Acetate solution is kept in a constant temperature bath set to be 30°C.
• 1355 gram of DI w'afer is added into a 2000 ml volumetric flask, which is then placed on the hot plate.
• the hot plate dial to high will take about 1 hour to allow 7 the w-'ater come to a boil.
• the bottom of the flask is reaching to temperature to be about 90°C.
• the volumetric flask is put into a container with tap water for cooling until down to 70°C.
• a pre- cleaned 250 ml graduated cylinder containing 13 grams of Potassium Iodide (KI) crystals is mixed with about 50 ml of deionized (DI) water, and add approximately 50 ml of Isopropanol into the graduated cylinder.
• DI deionized
• the graduated cylinder is put in the ultrasonic vibrator at a power up to 100% supplied for approximately 20 minutes, and mixing thoroughly by inverting the graduated cylinder several times. If not completely dissolved, this step will be repeated 2 or 3 times.
• DI water is added to the graduated cylinder until tilling to 250 ml mark, and then it is mixed thoroughly by inverting the graduated cylinder 20 to 25 times. This solution is stored at room temperature at least for overnight.
• deposition of PbSe consists of two layers: the first layer has little or no iodine added thereto, and the second layer has been doped with an adjustable amount or concentration of iodine, which is controlled to produce desirable PbSe nanostructures (e.g., nanoprisms) with doping at amounts considered a donor impurity.
• the carrier concentration can be varied by adding the desirable amount of iodine during the CBD process.
• one or both layers are subject to a chemical bath deposition for a predetermined amount of time (e.g., 30 minutes per layer, for a total of one hour), which may be the same for reach layer, but may change.
• the thin film PbSe thickness and morphology will vary; allowing for optimization of the PbSe structure and/or properties.
• the carrier concentration varies (e.g., lowers) as a function of the one or more sensitization treatments (e.g., oxygenation and/or iodination) applied to a PbSe nanostructure (e.g., a p-type PbSe particle).
• one or more substrates are mounted in a container of DI water, which will be used to heat up the substrates by a tungsten lamp that is immerged in the DI water, and the lamp voltage is supplied by a lab- made program.
• the peak deposition temperature of the solution during the chemical deposition will be reached to 90°C in a gradual manner.
• First amount of lead acetate solution into a 100 ml graduated beaker is measured and using a separate 250 ml graduated beaker, a second amount of Selenourea solution will be prepared separately.
• the x and y- amount will be varied and typically for PbSe detector application the x/y ratio will be 75/150.
• the first layer will be repeated by the addition of a given amount, of the iodine solution into the Selenourea and Lead Acetate solution in a container that will vary the donor concentration upon completion of chemical deposition that will be incorporated into PbSe crystal matrix.
• the amount of added iodine for the disclosed PbSe detector may be approximately 12- 60 ml (e.g., approximately 24 ml). The way of missing of the iodine addition will impact on the morphology of polycrystalline PbSe thin film as well as the distribution of the doping amount throughout the PbSe thin film.
• the prepared PbSe thin film will be a polycrystalline structure in nature and is subject to a vacuum bake step in order to get rid of any kind of solvent, which may be captured in the thin film or the substrate, which has etched rough surface morphology.
• the vacuum bake step is done at a predetermined temperature (e.g., 105°C) for a given period of time (e.g., overnight). This temperature will not alter the crystal structure of the PbSe thin film.
• the gas ratio of the mixture of oxygen and nitrogen is set to be about 20% and 75%, respectively, which may correspond to about 1.05 liter/min of oxygen flow rate and about 1.95 liter/min of nitrogen flow 7 rate, thus about a 3.0 liter/min in total throughout the vertical furnace.
• the peak temperature inside the tube furnace is related to the degree of the crystallization of PbSe that can be adjusted depending on the requirement of the size and shape of the nanoparticles. Typical peak furnace temperature to obtain the rectangular shape of the nanoprism is believe to be about 420°C (see, e.g., FIGS. 5 A and 5B).
• the deposited thin film PbSe alloy having a composition ratio of Pb0.55, Se0.45
• a high temperature above the melting point of Pb e.g., 100°C
• other phases of nanoparticles e.g., nanoprism, nanoribbon, and/or nanodisk
• cooling may determine the shapes of the particles (e.g., rate of cooling, amount of time to reach desired temperature, presence of gases, etc.).
• a doping process follows, employing iodine as a donor impurity.
• the carrier concentration of single crystalline PbSe nanoparticles e.g., nanoprism, nanoribbon, nanodisk
• the impurity level in the energy band diagram can be tailored by adding the iodine in a simple tube furnace.
• the set temperature of the center zone of the tube furnace can be set at a predetermined point (e.g., about 347°C) which yields an elevated exposure temperature (e.g., about 395 C C) inside the tube furnace.
• iodine crystal sublimation process is performed employing a lab- made water circulated Graham tube containing iodine crystals to provide the iodine vapor into the furnace.
• the nitrogen gas is used as a carrier, which introduces the iodine- rich vapor into the furnace.
• Application of the nitrogen gas solution can be set at a predetermined rate (e.g., 1.2 standard cubic feet per hour (SCFH)) when the solution does not carry' the iodine vapor, and set at a higher predetermined rate (e.g., 12.0 SCFH) when the solution does carry the vapor.
• SCFH standard cubic feet per hour
• the doping level of the PbSe crystal can be adjusted. For examples, doping time may be set to about 70 seconds at or near peak temperatures at the center of the furnace.
• doping time can be varied to provide a desired sensitivity corresponding to a given doping concentration.
• the doping process is implemented as the sample (e.g., quartz substrate) is being heat treated (e.g., within a quartz furnace).
• FIG. 2A show's an image of a. PbSe thin film (and thus nanostructures contained therein), in which the carrier concentration level can be adjusted by the two sensitization process conditions (e.g., oxygenation and/or iodination), with adjustable parameters corresponding to one or more of temperature, time, and/or amount and/or concentration of the induced gas amount during the heat treatment (e.g., within the furnace).
• the two sensitization process conditions e.g., oxygenation and/or iodination
• the nanoparticles are not detectable to investigation (e.g., under SEM or other investigation tools), as the single crystalline nanoparticles are not exposed, as they are embedded in and/or underlying the polycrystalline PbSe thin film.
• the PbSe nanoparticles can be exposed through a surface etching process using etchants, such as a diluted hydrogen fluoride (HF) solution diluted HF solution (DI water : HF :::: 50: 1 in volume ratio) or a solution of NaOH:IPA:Di water (1 :25:50 in volume ratio).
• etchants such as a diluted hydrogen fluoride (HF) solution diluted HF solution (DI water : HF ::::: 50: 1 in volume ratio) or a solution of NaOH:IPA:Di water (1 :25:50 in volume ratio).
• Example nanoparticles obtained via disclosed methods are shown in FIG. 3 A.
• FIG. 3B illustrates PbSe nanoprisms within the image of a PbSe nanostructure in FIG. 3 A, taking the shape of grans with angular profiles 101 and 110, as provided in the matrix.
• a first dimension e.g., length
• a second dimension e.g., thickness
• EDS energy- dispersive X- ray spectroscopy
• FIG. 3B displays a high number of nanoparticles with a size of 1 micron x 1 micron. These particles can be collected in a solution based method.
• post processing such as a long term post bake, is performed at a predetermined temperature (e.g., about 150°C) that will provide one or more of the following benefits: the doped iodine will be evenly re- distributed into the PbSe nanoparticles, which may grow in size during the post-baking step.
• a predetermined temperature e.g., about 150°C
• the disclosed methods are designed to synthesize substantially flat PbSe nanostructures (e.g., nanoprism, nanoplates) using a CBD technique and iodine doping process, and ultimately control electrical properties of PbSe nanostructures as shown in the example graph of FIG. 4.
• substantially flat PbSe nanostructures e.g., nanoprism, nanoplates
• CBD technique and iodine doping process e.g., nanoprism, nanoplates
• PbSe such as thin film photodetectors employing PbSe
• the disclosed methods may be applicable to other Pb-based chalcogenide and/or semiconducting materials, and/or other metal alloys (e.g., including other post-tran si tion metal s) .
• FIGS. 5A and 5B are graphs providing photo- luminescent measurement levels for PbSe nanostructure, in accordance with aspects of this disclosure.
• Photoluminescence can be measured via a process to test the electronic structure of a particular material.
• PL is a phenomenon when electromagnetic energy is absorbed and then emitted at a range of wavelengths, which may be of a different wavelength from the absorbed electromagnetic energy.
• a monochromatic source of energy e.g., a laser
• a monochromatic source of energy is directed to the material to excite the sample. Electrons excited in response to this energy move from the ground state to a higher, excited energy state. The material then emits energy as a combination of phonons (vibrations) and photons (light) as it returns to the ground state.
• a sensor can measure the emitted light for spectral and/or spatial analysis to yield information about material properties.
• the excited states are in the conduction-band (CB).
• the excitation photon should be shown exciting the electron high into the CB. Then non-radiative relaxation brings the electron to the conduction-band minimum (CBM).
• FIG. 5 A shows an example of the PL intensity for both an unprepared material juxtaposed against a nanoprism material prepared by disclosed methods.
• the unprepared material reached a low level (e.g., less than 10 a.u.), whereas the disclosed nanoprism material reached a peak nearing 140 a.u.
• the PL intensity has been increased approximately 140 times better than deposited, unprepared material, indicating that the degree of the PbSe crystallinity is substantially enhanced.
• FIG. 5B shows a filtered or smoothed line of the PL graph of FIG. 5 A.

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• 2022
  • 2022-11-17 JP JP2024530452A patent/JP2024546067A/ja active Pending
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