JP2024528521A - 重水素化されたオルガノスズ化合物、合成方法、及び放射線によるパターン形成 - Google Patents

重水素化されたオルガノスズ化合物、合成方法、及び放射線によるパターン形成 Download PDF

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JP2024528521A
JP2024528521A JP2023580532A JP2023580532A JP2024528521A JP 2024528521 A JP2024528521 A JP 2024528521A JP 2023580532 A JP2023580532 A JP 2023580532A JP 2023580532 A JP2023580532 A JP 2023580532A JP 2024528521 A JP2024528521 A JP 2024528521A
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organotin
deuterated
tin
reaction
radiation
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Japanese (ja)
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JP2024528521A5 (https=
Inventor
イー ジレク，ロバート
ジェイ カルディノー，ブライアン
フイフイ－ジスト，キエラ
ティ マイヤーズ，スティーブン
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Inpria Corp
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Inpria Corp
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/22—Tin compounds
    • C07F7/2208—Compounds having tin linked only to carbon, hydrogen and/or halogen
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/22—Tin compounds
    • C07F7/2224—Compounds having one or more tin-oxygen linkages
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/22—Tin compounds
    • C07F7/2284—Compounds with one or more Sn-N linkages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07B—GENERAL METHODS OF ORGANIC CHEMISTRY; APPARATUS THEREFOR
    • C07B2200/00—Indexing scheme relating to specific properties of organic compounds
    • C07B2200/05—Isotopically modified compounds, e.g. labelled

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Materials For Photolithography (AREA)
JP2023580532A 2021-06-28 2022-06-08 重水素化されたオルガノスズ化合物、合成方法、及び放射線によるパターン形成 Pending JP2024528521A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US202163215720P 2021-06-28 2021-06-28
US63/215,720 2021-06-28
US17/682,586 US20220411446A1 (en) 2021-06-28 2022-02-28 Deuterated organotin compounds, methods of synthesis and radiation patterning
US17/682,586 2022-02-28
PCT/US2022/032614 WO2023278109A1 (en) 2021-06-28 2022-06-08 Deuterated organotin compounds, methods of synthesis and radiation patterning

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JP2024528521A true JP2024528521A (ja) 2024-07-30
JP2024528521A5 JP2024528521A5 (https=) 2025-06-17

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US (1) US20220411446A1 (https=)
EP (1) EP4363429A4 (https=)
JP (1) JP2024528521A (https=)
KR (1) KR20240026289A (https=)
TW (1) TW202300498A (https=)
WO (1) WO2023278109A1 (https=)

Families Citing this family (3)

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Publication number Priority date Publication date Assignee Title
TWI821891B (zh) * 2021-01-28 2023-11-11 美商恩特葛瑞斯股份有限公司 製備有機錫化合物的方法
US11697660B2 (en) * 2021-01-29 2023-07-11 Entegris, Inc. Process for preparing organotin compounds
CN117402030B (zh) * 2023-12-14 2024-02-13 烟台九目化学股份有限公司 一种全氘代有机光电中间体材料的制备方法

Citations (6)

* Cited by examiner, † Cited by third party
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JPS63151941A (ja) * 1986-12-16 1988-06-24 Matsushita Electric Ind Co Ltd レジスト材料
WO2001037049A1 (en) * 1999-11-12 2001-05-25 Nippon Sheet Glass Co., Ltd. Photosensitive composition, and optical waveguide element and process for producing the same
JP2018502173A (ja) * 2014-10-23 2018-01-25 インプリア・コーポレイションＩｎｐｒｉａ Ｃｏｒｐｏｒａｔｉｏｎ 有機金属溶液に基づいた高解像度パターニング組成物および対応する方法
WO2019199467A1 (en) * 2018-04-11 2019-10-17 Inpria Corporation Monoalkyl tin compounds with low polyalkyl contamination, their compositions and methods
JP2020021071A (ja) * 2018-07-31 2020-02-06 三星エスディアイ株式会社Samsung SDI Co., Ltd. 半導体レジスト用組成物およびこれを用いたパターン形成方法
JP2020530199A (ja) * 2017-08-02 2020-10-15 シースター ケミカルズ アンリミティッド ライアビリティ カンパニー 高純度酸化スズの堆積のための有機金属化合物及び方法

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US6579630B2 (en) * 2000-12-07 2003-06-17 Canon Kabushiki Kaisha Deuterated semiconducting organic compounds used for opto-electronic devices
JP4377635B2 (ja) * 2003-09-02 2009-12-02 ダイセル化学工業株式会社 有機スズ化合物及びその製造方法
JP5795636B2 (ja) * 2010-08-11 2015-10-14 ヴォルタイクス エルエルシー． スタンナン及び重水素化スタンナンの合成
KR102508142B1 (ko) * 2015-10-13 2023-03-08 인프리아 코포레이션 유기주석 옥사이드 하이드록사이드 패터닝 조성물, 전구체 및 패터닝
US10787466B2 (en) * 2018-04-11 2020-09-29 Inpria Corporation Monoalkyl tin compounds with low polyalkyl contamination, their compositions and methods
US11092890B2 (en) * 2018-07-31 2021-08-17 Samsung Sdi Co., Ltd. Semiconductor resist composition, and method of forming patterns using the composition
US11498934B2 (en) * 2019-01-30 2022-11-15 Inpria Corporation Monoalkyl tin trialkoxides and/or monoalkyl tin triamides with particulate contamination and corresponding methods

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63151941A (ja) * 1986-12-16 1988-06-24 Matsushita Electric Ind Co Ltd レジスト材料
WO2001037049A1 (en) * 1999-11-12 2001-05-25 Nippon Sheet Glass Co., Ltd. Photosensitive composition, and optical waveguide element and process for producing the same
JP2018502173A (ja) * 2014-10-23 2018-01-25 インプリア・コーポレイションＩｎｐｒｉａ Ｃｏｒｐｏｒａｔｉｏｎ 有機金属溶液に基づいた高解像度パターニング組成物および対応する方法
JP2020530199A (ja) * 2017-08-02 2020-10-15 シースター ケミカルズ アンリミティッド ライアビリティ カンパニー 高純度酸化スズの堆積のための有機金属化合物及び方法
WO2019199467A1 (en) * 2018-04-11 2019-10-17 Inpria Corporation Monoalkyl tin compounds with low polyalkyl contamination, their compositions and methods
JP2020021071A (ja) * 2018-07-31 2020-02-06 三星エスディアイ株式会社Samsung SDI Co., Ltd. 半導体レジスト用組成物およびこれを用いたパターン形成方法

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GUILLEMIN, JEAN-CLAUDE ET AL.: ""The ground-state rotational spectrum and molecular geometry of ethynylstannane"", PHYSICAL CHEMISTRY CHEMICAL PHYSICS, vol. 8, no. 18, JPN6026008424, 2006, pages 2145 - 2152, ISSN: 0005808146 *
HUTTON, RONALD E ET AL.: "β-Substituted alkyltin halides, I. Monoalkyltin trihalides: synthetic,mechanistic and spectroscopic", JOURNAL OF ORGANOMETALLIC CHEMISTRY, vol. 156, no. 2, JPN6026008425, 1998, pages 369 - 382, ISSN: 0005808147 *

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Publication number Publication date
KR20240026289A (ko) 2024-02-27
EP4363429A4 (en) 2025-04-30
US20220411446A1 (en) 2022-12-29
TW202300498A (zh) 2023-01-01
EP4363429A1 (en) 2024-05-08
WO2023278109A1 (en) 2023-01-05

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