JP2024528220A - 電気制御による不揮発性書き込みおよびホール効果による読み出しを備えた電子システム - Google Patents

電気制御による不揮発性書き込みおよびホール効果による読み出しを備えた電子システム Download PDF

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JP2024528220A
JP2024528220A JP2024506726A JP2024506726A JP2024528220A JP 2024528220 A JP2024528220 A JP 2024528220A JP 2024506726 A JP2024506726 A JP 2024506726A JP 2024506726 A JP2024506726 A JP 2024506726A JP 2024528220 A JP2024528220 A JP 2024528220A
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electrode
electronic system
subassembly
magnetic
contact
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JP2024506726A
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Japanese (ja)
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JP2024528220A5 (https=
Inventor
グレゼス セシル
ビラ ローラン
アタヌ ジャン－フィリップ
ビベス マニュエル
Original Assignee
コミサリヤ ア レネルジ アトミク エ ウ エネルジ アルタナティブ
タレス
サントル ナシオナル ドゥ ラ ルシェルシェ サイアンティフィク
ウニベルシテ グルノーブル アルプ
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Publication of JP2024528220A publication Critical patent/JP2024528220A/ja
Publication of JP2024528220A5 publication Critical patent/JP2024528220A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/101—Semiconductor Hall-effect devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/18—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using Hall-effect devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2259—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2273—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2275—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/20—Spin-polarised current-controlled devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
JP2024506726A 2021-08-06 2022-08-03 電気制御による不揮発性書き込みおよびホール効果による読み出しを備えた電子システム Pending JP2024528220A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR2108564 2021-08-06
FR2108564A FR3126086A1 (fr) 2021-08-06 2021-08-06 Système électronique à écriture non-volatile par contrôle électrique et à lecture par effet Hall
PCT/EP2022/071817 WO2023012216A1 (fr) 2021-08-06 2022-08-03 Système électronique à écriture non-volatile par contrôle électrique et à lecture par effet hall

Publications (2)

Publication Number Publication Date
JP2024528220A true JP2024528220A (ja) 2024-07-26
JP2024528220A5 JP2024528220A5 (https=) 2025-08-13

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JP2024506726A Pending JP2024528220A (ja) 2021-08-06 2022-08-03 電気制御による不揮発性書き込みおよびホール効果による読み出しを備えた電子システム

Country Status (5)

Country Link
US (1) US20240349625A1 (https=)
EP (1) EP4381916A1 (https=)
JP (1) JP2024528220A (https=)
FR (1) FR3126086A1 (https=)
WO (1) WO2023012216A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119604182B (zh) * 2024-10-31 2025-11-04 中国科学院微电子研究所 自旋突触器件及存内计算装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0888425A (ja) * 1994-09-19 1996-04-02 Fujitsu Ltd ホール効果磁気センサおよび薄膜磁気ヘッド
US6714446B1 (en) * 2003-05-13 2004-03-30 Motorola, Inc. Magnetoelectronics information device having a compound magnetic free layer
CA2573406A1 (en) * 2004-07-27 2006-02-02 University Of Toronto Tunable magnetic switch
US7902820B2 (en) * 2005-05-03 2011-03-08 Imec Method and apparatus for detecting spatially varying and time-dependent magnetic fields
WO2009073074A1 (en) * 2007-12-05 2009-06-11 Micromem Technologies Inc. Magnetic memory device having a c-shaped structure and method of manufacturing the same
KR100982660B1 (ko) * 2008-08-01 2010-09-17 한국과학기술연구원 스핀 홀 효과를 이용한 자기메모리셀 판독 방법 및자기메모리 장치
KR102023626B1 (ko) * 2013-01-25 2019-09-20 삼성전자 주식회사 스핀 홀 효과를 이용한 메모리 소자와 그 제조 및 동작방법
US9871193B2 (en) * 2014-08-08 2018-01-16 California State University, Northridge Methods of producing and controlling tunneling electroresistance and tunneling magnetoresistance in a multiferroic tunnel junction
US9293160B1 (en) * 2015-02-06 2016-03-22 HGST Netherlands B.V. Magnetic stabilization and scissor design for anomalous hall effect magnetic read sensor
WO2017034563A1 (en) * 2015-08-26 2017-03-02 Intel IP Corporation Dual pulse spin hall memory with perpendicular magnetic elements
US10686127B2 (en) * 2016-03-28 2020-06-16 National University Of Singapore Antiferromagnet and heavy metal multilayer magnetic systems for switching magnetization using spin-orbit torque
FR3118307B1 (fr) * 2020-12-18 2025-01-17 Commissariat Energie Atomique Dispositif de modification de la direction d’aimantation d’une couche magnétique, système spintronique et procédé associés
WO2023039571A1 (en) * 2021-09-10 2023-03-16 Iowa State University Research Foundation, Inc. Apparatus, systems, and methods for tuning the structure, conductivity, and/or wettability of laser induced graphene for a variety of functions including multiplexed open microfluidic environmental biosensing and energy storage devices

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Publication number Publication date
US20240349625A1 (en) 2024-10-17
FR3126086A1 (fr) 2023-02-10
WO2023012216A1 (fr) 2023-02-09
EP4381916A1 (fr) 2024-06-12

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