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Definitions

• the present invention relates to an electronic system with non-volatile writing by electrical control and reading by Hall effect.
• the present invention relates to the field of microelectronics and in particular to the field of memory devices, logic devices, neuromorphic devices based on dielectrics with non-volatile electrical control, in particular for information and communication technologies.
• Dielectric materials with non-volatile electrical control are characterized by a non-linear relationship between the applied voltage and the apparent stored charge following a hysteresis cycle. These remanent states of the hysteresis cycle can be used to store information in a non-volatile way.
• Ferroelectric materials are examples of such materials with remanent states. In fact, ferroelectric materials have a spontaneous macroscopic polarization, which can be written by applying a voltage. It is possible to encode information in this ferroelectric state, which has led to the appearance of ferroelectric memory/logic devices.
• Fe-RAM ferroelectric random access memory referring to the English name of “Ferroelectric Random Access Memory” which literally means “Ferroelectric Random Access Memory”.
• the Fe-RAM memory is a memory device similar to a dynamic random access memory DRAM (referring to the English name of "Dynamic Random Access Memory” which literally means “dynamic random access memory”) to which a ferroelectric layer is added to obtain a property of non-volatility.
• DRAM dynamic random access memory
• the advantage of Fe-RAM memory is to combine the speed of random access memory and the non-volatile characteristics of flash memory.
• the writing of information to be stored is carried out by applying a voltage between the two faces of the ferroelectric layer.
• the information is thus encoded in the state of polarization of the ferroelectric layer.
• the reading is performed by applying a voltage and measuring the current produced. More specifically, a voltage pulse is applied between the two faces of the ferroelectric layer so as to attempt to switch the polarization from a first state to to a second state, for example from state “0” to state “1 ". If the Fe-RAM memory was already in state "1", the only current produced read is linked to the voltage pulse applied. If the Fe-RAM memory was initially in the “0” state, the current produced will be the sum of the current linked to the voltage pulse and the depolarization current linked to the reversal of the polarization.
• the read mechanism is thus destructive: reading erases the stored memory state, which involves rewriting the Fe-RAM memory using a particular architecture.
• Fe-FET ferroelectric field effect transistor referring to the English name “Ferroelectric Field Effect Transistor” which literally means “Ferroelectric Field Effect Transistor”.
• Field effect transistors are unipolar devices with 3 terminals, based on the action of an electric field on the conductivity of a channel connecting the source to the drain.
• the Fe-FET uses a ferroelectric element inserted between the gate electrode and the channel to achieve non-volatility
• the information is encoded in the bias of the ferroelectric material which acts as a non-volatile gate, controlling the conductivity of the transistor channel. Reading the polarization state is done by measuring the longitudinal resistance of the channel (parallel to the read current) with a voltage lower than the coercive voltage of the ferroelectric material. The memory is not erased.
• the reading mechanism is certainly non-destructive but suffers from reading errors due to the partial depolarization induced by the application of the reading voltage on the ferroelectric material, and the constraints imposed on the choice of materials limit the endurance of these devices.
• Re-RAM resistive random access memories (referring to the English name of "Resistive Random Access Memory” which literally means “Resistive Random Access Memory”) are another example of a device using non-volatile electrical control of resistance in a dielectric material.
• Reading is done by measuring the resistance of the dielectric with a voltage lower than the write voltage across the terminals of the dielectric.
• the reading mechanism Since reading does not eliminate the coding of the information, the reading mechanism is in principle non-destructive but suffers from reading errors due to the effect of the reading voltage on the dielectric material, and involves the application of high voltages.
• a known alternative to the Re-RAM memory is to use a PC-RAM memory (referring to the English denomination of “Phase Changing Random Access Memory” which literally means “Phase Changing Random Access Memory”). The material used is then a phase change material, which under the application of an electric current will switch between a poorly conductive amorphous phase and a conductive crystalline phase.
• PC-RAM memories also involve high working voltages.
• an electronic system with non-volatile writing by electrical control and reading by Hall effect comprising an electronic device comprising a stack of layers stacked along a stacking direction, the stack of layers.
• the stack of layers comprises a first electrode, a remanent state subassembly comprising at least one dielectric layer such that said remanent state subassembly has at least two electrically controllable remanent states, a two-dimensional electron gas, a sub -magnetic assembly comprising at least one magnetic layer, and a second electrode comprising two first contacts each extending along a first direction and a second contact extending along a second direction, the second direction being distinct from the first direction, the first and the second direction being in a plane perpendicular to the direction of the stack.
• the electronic system comprises a writing device capable of writing remanent states of the remanent-state subassembly by applying an electric field between the first electrode and the second electrode by modulating the electric resistance of the two-dimensional electron gas, and a Hall effect reading device capable of reading the remanent state of the subassembly with remanent states by applying a current between the two first contacts and by measuring the voltage between the second contact and a reference potential.
• the writing mechanism of the electronic system does not reverse the magnetization of the subassembly with remanent states during the application of an electric field between the first electrode and the second electrode.
• the writing device of the electronic system allows a remanent change of state corresponding to a modulation of the electrical resistance of the two-dimensional electron gas. This allows for improved writing.
• the electronic system has one or more of the following characteristics, taken separately or according to all the technically possible combinations:
• the first electrode comprises at least one contact
• the writing device applying the electric field between the at least one contact of the first electrode and at least one contact of the second electrode.
• the first electrode is in contact with the remanent state subassembly.
• the first electrode is merged with the remanent state subassembly.
• the second electrode is in contact with the two-dimensional electron gas.
• the second electrode is confused with the two-dimensional gas of electrons.
• the second electrode is in contact with the magnetic sub-assembly.
• the second electrode is merged with the magnetic sub-assembly.
• the second electrode comprises at least one additional contact, the reference potential being the potential of the additional contact.
• the electrically controllable remanent states of the remanent state subassembly are controllable by a ferroelectric effect, a trapped charge effect, an ion migration effect or a combination of said effects.
• the two-dimensional electron gas has a carrier density greater than 1 O 10 cm 2 .
• the magnetic subassembly comprises at least one ferromagnetic element chosen from a ferromagnetic metal alloy, a ferromagnetic oxide, a magnetic semiconductor, a composite ferromagnetic element with several ferromagnetic and metallic layers, a Heusler alloy, an earth-based alloy rare or a combination of these materials.
• the magnetic subassembly comprises at least one ferrimagnetic element chosen from a ferrimagnetic metal alloy, a ferrimagnetic oxide, a composite ferrimagnetic element with several ferromagnetic or ferrimagnetic and metallic layers, or a ferrimagnetic alloy based on rare earths, or a combination of these materials.
• the magnetic subassembly comprises at least one antiferromagnetic element chosen from an antiferromagnetic metal alloy, an antiferromagnetic oxide, a composite antiferromagnetic element with several magnetic and metal layers coupled together in an antiferromagnetic manner, or a combination of these materials.
• the magnetic sub-assembly comprises at least one magnetic element chosen from a material having an extraordinary Hall effect greater than 0.5% and a material having a magnetoresistance greater than 0.5%.
• the stack of layers also comprises at least one interfacing layer, the interfacing layer comprising at least one layer chosen from among a non-magnetic metal layer and a layer exhibiting a spin-orbit effect.
• the interfacing layer comprises at least one element among a metal, a Weyl semi-metal, a two-dimensional material, a dichalcogenide of transition metals and a topological insulator.
• the electronic system comprises at least one other electronic device (12), all of the electronic devices being arranged in cascade or in the form of a network, each other electronic device comprising a stack of layers stacked along the stacking direction.
• the first electrode of an electronic device is connected to a second electrode of an adjacent electrical device.
• FIG. 1 is a schematic representation of an example of an electronic system with non-volatile writing by electrical control and reading by Hall effect comprising in particular a remanent state subassembly having at least two electrically controllable remanent states, a two-dimensional gas d electrons and a magnetic subset,
• FIG. 2 is a schematic representation of a charge-voltage hysteresis cycle of a subassembly with remanent states
• FIG. 3 is a schematic representation of the dependence as a function of the voltage of the extraordinary and planar Hall effects in a ferromagnetic subassembly
• FIG. 4 is a schematic representation of another example of an electronic system with non-volatile writing by electrical control and reading by Hall effect
• FIG. 5 is a schematic representation of an example of a system formed by cascading nesting of non-volatile electronic devices
• FIG. 6 is a schematic representation of an example of a system formed by nesting in a network of non-volatile electronic devices.
• An electronic system with non-volatile writing by electrical control and with reading by Hall effect 10 is illustrated in FIG. 1. In the following, such a system is simply referred to as an electronic system.
• the electronic system 10 comprises an electronic device 12, a writing device 14 and a Hall effect reading device 16.
• the electronic system 10 is, for example, a memory, a logic device or a neuromorphic device.
• the electronic system 10 has the specificity of being a system with electrical control and reading by Hall effect.
• a Hall effect corresponds to the fact that an electric current passing through a material generates an electric field and therefore a voltage perpendicular to this current.
• the so-called classic Hall effect which appears when a magnetic field is applied, generates a voltage perpendicular to this magnetic field and to this current.
• the so-called abnormal or extraordinary Hall effect which appears when the material carries a magnetization, generates a voltage perpendicular to this magnetization and to this current.
• the planar Hall effect which appears when the material carries a magnetization in the plane of the layer, generates a voltage in the plane of the layer and perpendicular to this current.
• the electronic device 12 comprises a stack of layers 18.
• the layers of stack 18 are layers stacked in a stacking direction Z.
• Two longitudinal directions are then defined which are perpendicular to the stacking direction Z, a first longitudinal direction X and a second longitudinal direction Y.
• the two longitudinal directions X and Y are orthogonal to each other and chosen so that the reference X, Y and Z is direct.
• first longitudinal direction X and the second longitudinal direction Y are simply distinct and are not mutually orthogonal.
• the thickness of a layer is defined as the dimension along the Z stacking direction of the layer, i.e. the distance between its two faces.
• the stack 18 is a stack of superposed layers in the shape of a cross.
• Other shapes are possible as will be described later with reference to Figure 4.
• the cross is formed by the joining of two branches 20 and 22, a first branch 20 being in the first longitudinal direction X and the second branch 22 being in the second longitudinal direction Y.
• the electronic device 12 comprises a first electrode 24, a remanent state subassembly 26, a first interfacing layer 28, a two-dimensional electron gas 30, a second interfacing layer 32, a magnetic subassembly 34 and a second electrode 36.
• the first electrode 24 has one contact and the second electrode 36 has four contacts, so that the electronic device 12 has five contacts.
• the contacts of the second electrode 36 are respectively called first contact C1, second contact C2, third contact C3, fourth contact C4 and the contact of the first electrode 24 is called fifth contact C5.
• Each contact C1, C2, C3, C4 and C5 is an electrical contact.
• each contact C1, C2, C3, C4 is represented in the form of a parallelepiped extending in a main direction.
• each contact C1, C2, C3, C4 has a respective main direction.
• the write contact at the second electrode 36 may be anywhere thereon. It can be made by one of the aforementioned contacts C1, C2, C3, C4, or by a specific contact which can be, for example, at the center of the cross formed by the second electrode 36.
• each electrode 24 or 36 can be produced by conductive layers arranged on either side of the stack but when one of the outer layers of the stack is conductive, the electrode 24 or 36 associated with this layer may be the outer layer itself.
• the subassembly with remanent states 26 is positioned on the first electrode 24.
• subassembly with remanent states 26 forms a non-volatile dielectric element with electrical control.
• the dielectric element presents a non-linear relationship between the voltage V applied between its faces and the apparent stored charge Q following a hysteresis cycle, resulting in at least two remanent states.
• Figure 2 graphically presents an example of such a relationship by showing the Q - V hysteresis cycle characteristic of an electrically controlled non-volatile dielectric. As visible in Figure 2, the hysteresis cycle has two remanent states noted A and B.
• Such a non-linear relationship can, for example, result from an electrical control using a ferroelectric effect, a trapped charge effect, an ion migration effect or a combination of several of these effects.
• the use of the remanent state subassembly 26 makes it possible to electrically control in a non-volatile manner the conductivity of the two-dimensional electron gas 30.
• the sub-assembly with remanent states 26 has said remanent states which can be controlled electrically, and comprises at least one dielectric material.
• the dielectric material is an ABO3 type perovskite structure (where A and B are cations).
• a and B are cations.
• One such structure is an oxide perovskite structure.
• the dielectric material is, for example, in BaTiOs, in PZT (that is to say in PbZri-xTixOs with x varying between 0 and 1), in PMN-PT (that is to say in [ 1 -x]Pb(Mgi/ 3 Nb2/3)O3 - xPbTiOs with x varying between 0 and 1), in BiFeOs (possibly doped, for example in rare earths on the Bi site, or in Mn on the Fe site ), SrTiO 3 (optionally doped), KTiO 3 (optionally doped) , Pr 0.7 Cao.3Mn03 (optionally doped) or YMnOs (optionally doped).
• PZT that is to say in PbZri-xTixOs with x varying between 0 and 1
• PMN-PT that is to say in [ 1 -x]Pb(Mgi/ 3 Nb2/3)O3 - x
• the dielectric material is (Hfi- x Zr x )02 or (Hfi. x Ga x )O2 (x varying between 0 and 1), or their alloys.
• the dielectric material can also be poly(vinylidene fluoride).
• the dielectric material does not have the perovskite structure, unlike the first example.
• the dielectric material is a ferroelectric semiconductor.
• GeTe, BiTel, BiAIOs, and Bi 2 WO3, optionally doped, are examples of such ferroelectric semiconductor materials.
• the dielectric material is chosen from the following compounds: SiO x N x , (Ta2O 5 ) x (TiO2)ix or (Nb2O 5 )x(TiNb2O 7 )i- x (x varying between 0 and 1 ).
• the dielectric material is chosen from halide perovskite structures such as CsPbBr 3 , MAPb1 3 , or MAPbBr 3 .
• the existence of the remanent states comes from a ferroelectric effect, a trapped charge effect, an ion migration effect or a combination of several of these effects.
• the predominant effect depends on the deposition conditions of the dielectric layer.
• the coercive electric field of the dielectric element and its thickness are sufficiently low for the writing device 14 to be able to write the remanent states at voltages compatible with microelectronic technologies, that is to say voltages below 10 Volts ( ⁇ 10 V).
• a thickness of less than 100 nm and advantageously less than 50 nm in the aforementioned materials makes it possible to obtain such properties.
• the subassembly with remanent states 26 is also enduring to cycling, typically capable of withstanding at least 10 4 cycles.
• Two-dimensional electron gas 30 is a confined electron gas that forms at an interface between two layers.
• the confinement is such that it can be considered that this gas is strictly two-dimensional.
• the two-dimensional electron gas 30 can form at the interface between two layers of the stack 18.
• the resistance of the two-dimensional electron gas 30 is electrically adjustable in a non-volatile manner under the effect of the remanent state subassembly 26, more precisely by choosing the remanent state of the remanent state subassembly 26.
• the two-dimensional electron gas has a high density of carriers (typically greater than 10 10 cm -2 ) to improve the electrical modulation of the Hall effect.
• the magnetic sub-assembly 34 is capable of generating a contribution to the Hall effect of the electronic device 12.
• Magnetic subassembly 34 includes at least one magnetic layer.
• the magnetic subassembly 34 is made of one or more materials, and includes at least one ferromagnetic, ferrimagnetic or antiferromagnetic element.
• the magnetic sub-assembly 34 also comprises layers for anchoring the magnetization, that is to say intended to fix the direction of the magnetization.
• the magnetic sub-assembly comprises a ferromagnetic material.
• the ferromagnetic material is a ferromagnetic metal alloy composed of elements such as Co, Fe, B, Ni or Al.
• the ferromagnetic material is a ferromagnetic oxide.
• the ferromagnetic material is a magnetic semiconductor.
• the ferromagnetic material is a composite ferromagnetic element of [FM/M] n /FM type, that is to say a stack of several ferromagnetic FM and metallic M layers coupled together.
• n varies between 1 and 10.
• the ferromagnetic materials FM are, for example, those of the first three examples.
• the metallic materials M are chosen from Al, Ta, Ru, Pt, W, Ir, Mo, Ti, Y and Au.
• the ferromagnetic material is a Heusler alloy.
• the ferromagnetic material can be made with alloys based on rare earths, such as, for example, Nd, Sm, Eu, Gd, Tb, or Dy.
• the magnetic subassembly 34 comprises at least one ferrimagnetic element, for example chosen from a ferrimagnetic metal alloy, a ferrimagnetic oxide, a composite ferrimagnetic element with several ferromagnetic or ferrimagnetic and metallic layers, a Heusler alloy or a ferrimagnetic alloy based on rare earths, or a combination of these materials.
• a ferrimagnetic metal alloy for example chosen from a ferrimagnetic metal alloy, a ferrimagnetic oxide, a composite ferrimagnetic element with several ferromagnetic or ferrimagnetic and metallic layers, a Heusler alloy or a ferrimagnetic alloy based on rare earths, or a combination of these materials.
• the magnetic subassembly 34 comprises at least one antiferromagnetic element, for example chosen from an antiferromagnetic metal alloy, an antiferromagnetic oxide, a composite antiferromagnetic element with several magnetic and metal layers coupled together in an antiferromagnetic way, or a combination of these materials.
• the thickness of the magnetic subassembly 34 is small (typically less than 100 nm), so as to optimize reading by the Hall effect of the Hall effect reading device 16.
• planar Hall effect it is preferable to choose materials with planar magnetization with an anisotropic magnetoresistance greater than 0.5%.
• the electronic device 12 comprises two additional layers which are the interfacing layers 28 and 32.
• each interfacing layer 28 and 32 performs one or more of the following functions: protecting the two-dimensional electron gas 30, participating in the formation of the two-dimensional electron gas 30, improving its transport, improve the electronic transport properties of the electronic device 12, and/or improve the electrical modulation of the Hall effect to facilitate reading by the Hall effect reading device 16.
• Each interfacing layer 28 and 32 has a relatively small thickness, for example less than or equal to 10 nm.
• the interfacing layer 28 or 32 is a layer consisting of an element from columns 3d, 4d, 5d, 4f, 5f of the periodic table such as Al, Ta, Ru, Pt, W, Ir, Mo, Ti, Y, Au, or a combination of these elements such as PtW.
• the interfacing layer 28 or 32 is a layer made of a material with strong spin-orbit coupling.
• a material with strong spin-orbit coupling is a material which makes it possible to convert a charge current into a spin current.
• material with strong spin-orbit coupling is Tantalum (P-Ta), BiSb, Ta, p-Tungsten (P-W), W or Pt.
• the material with strong spin-orbit coupling is Cu or Au doped with elements from columns 3d, 4d, 5d, 4f, 5f of the classification periodic like W, Ta, Bi so as to obtain strong spin-orbit effects, or a combination of 5d elements, such as PtW.
• the material with strong spin-orbit coupling is a two-dimensional spin-orbit material.
• two-dimensional spin-orbit material the following materials may be cited: graphene, BiSes, S2, BiSe x Te2- x (x varying between 0 and 2), BiS, TiS, WS2, M0S2, TiSe2, VSe2, MoSe2, B2S3, Sb2S, T 0 , 75 S, Re2S 7 , LaCPS2, LaOAsS2, ScOBiS2, GaOBiS2, AIOBiS2, LaOSbS2, BiOBiS2, YOBiS2, lnOBiS2, LaOBiSe2, TiOBiS2, CeOBiS2, PrOBiS2, NdOBiS2, LaOBiS2, or SrFBiS2.
• the aforementioned materials can optionally be doped.
• the material with strong spin-orbit coupling is a topological insulator.
• a topological insulator is a material having an insulator-like band structure but which has metallic surface states.
• material with strong spin-orbit coupling is Bi 2 Se3, BiSbTe, SbTes, HgTe or a-Sn.
• the material with strong spin-orbit coupling is a Weyl semimetal.
• the material with strong spin-orbit coupling is, for example, TaAs, TaP, NbAs, NbP, NasBi, Cd3As2, WTe20u or MoTe2.
• irradiation of the material can be implemented with ions, such as He ions or Ar ions.
• the material of the spin-orbit layer is a transition metal dichalcogenide, and preferably a ROCh 2 type dichalcogenide. Such a material actually exhibits a good Rashba effect.
• 'R' is for example chosen from La, Ce, Pr, Nd, Sr, Sc, Ga, Al, or I n while 'Ch' is selected from S, Se or Te.
• the second electrode 36 comprises the two branches 20 and 22 and four contacts, namely the first contact C1, the second contact C2, the third contact C3 and the fourth contact C4.
• the branches 20 and 22 are in contact or merged either with the two-dimensional gas of electrons 30, or with the magnetic sub-assembly 34.
• the second contact C2 and the fourth contact C4 form a pair of opposite contacts and each extend mainly along the same direction, namely the first longitudinal direction X.
• the first contact C1 and the third contact C3 form the other pair of opposite contacts and each extend mainly along the same direction, namely the second longitudinal direction Y.
• the remanent state subassembly 26 comprises two remanent states denoted A and B.
• the writing device 14 modifies these states by applying a voltage between the first electrode 24 and the second electrode 36.
• the writing device 14 writes by applying a voltage between the first contact C1 and the fifth contact C5. Any contact of the second electrode 36 can be used here.
• the writing device 14 is, for example, a transistor making it possible to positively or negatively charge the second electrode 36.
• the mechanism for reading the remanent states A or B by the Hall effect reading device 16 involves the Hall effect.
• the Hall effect reading device 16 measures the potential difference, that is to say the voltage, produced by Hall effect between the second contact C2 and the fourth contact C4 when a current is applied between the first contact C1 and the third contact C3.
• the reference potential can be the potential of the third contact C3 or of any other contact, even external to the system, for example the earth potential.
• Reading by Hall effect is therefore done by measuring the Hall resistance of the magnetic sub-stack 34, perpendicular to the reading current applied.
• the Hall effect reading device 16 thus comprises a current injection unit and a Hall voltage measurement unit.
• the current injection unit is a separate transistor from that of the writing device 14.
• the graph in Figure 3 clearly shows that it is possible to determine the two states by this measurement.
• the graph of FIG. 3 presents the dependence as a function of the applied voltage of the extraordinary Hall effect (AHE) and of the planar Hall effect (PHE) in the magnetic sub-stack 34, measured between the second contact C2 and the fourth contact C4 during the application of a current of 10 microamperes (pA) between the first contact C1 and the third contact C3.
• AHE extraordinary Hall effect
• PHE planar Hall effect
• reading by Hall effect is non-destructive, in the sense that it does not modify the state of the remanent-state subassembly 26. Therefore, the electronic system 10 combines in an original way a two-dimensional electron gas 30 and a magnetic sub-assembly 34 for reading by Hall effect, non-destructive and compatible with any type of non-volatile dielectric element with control. electric. Indeed, it is irrelevant whether the dielectric element is based on a ferroelectric effect, a trapped charge effect, an ion migration effect, a filamentary formation effect or a combination of these effects.
• the association of the two-dimensional gas of electrons 30 and the magnetic subassembly 34 allows an increase in the Hall effect allowing its detection in a reliable and repeatable manner.
• the manufacture of the electronic device 12 is relatively easy insofar as the assembly 18 can here be lithographed and etched over the entire thickness.
• the electronic device 12 has no interfacing layers or comprises only one.
• the device comprises a stack 18 with layers arranged in a different order when the stack 18 is traversed from the bottom upwards.
• the stack 18 of FIG. the two-dimensional gas layer 30 and the magnetic subassembly 34.
• the order is as follows: subassembly with remanent states 26, then magnetic subassembly 34 then layer of two-dimensional gas 30.
• the first electrode 24 can be positioned either at the top (as upper electrode) or at the bottom (as lower electrode).
• the contacts C1 to C4 of the first electrode 24 are deposited last with respect to the other layers of the stack 18 whereas they are deposited first in the second case.
• the fourth contact C4 is deleted.
• the device then presents a stack of superimposed layers in the shape of a “T” instead of the cross shape.
• the Hall voltage is then read between the second contact C2 and an electric reference potential.
• the reference potential is, for example, the potential of the first contact C1 or of the third contact C3.
• the order of the main layers can vary similarly and the interfacing layers 28 and 32 can be present or not.
• FIG. 5 corresponds to the case of electronic devices 12 connected together so as to form a network.
• the network comprises n electronic devices 12 in a row and m electronic devices 12 in a column, m and n being integers of which at least one is greater than or equal to 2.
• the third contact C3 of an electronic device 12 of a line is connected to the first contact C1 of the neighboring electronic device 12 on the same line via a connection 38.
• the fourth contact C4 of an electronic device 12 is connected to the second contact C2 of the neighboring electronic device 12 on the same line via a link 40.
• Such an arrangement makes it possible to pass the read current through several electronic devices and/or to sum the read voltages. Reading is improved.
• FIG. 6 corresponds to the case of electronic devices 12 arranged in cascade.
• n electronic devices 12 are connected together one after the other.
• the fourth contact C4 of an electronic device 12 is connected to the fifth contact of a following electronic device 12 via a link 42.
• the connections between the electronic devices 12 are made in such a way that the Hall voltage produced by an electronic device 12 makes it possible to modify the state of the sub-stack with remanent states 26.

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• Engineering & Computer Science (AREA)
• Computer Hardware Design (AREA)
• Power Engineering (AREA)
• Semiconductor Memories (AREA)
• Mram Or Spin Memory Techniques (AREA)
• Hall/Mr Elements (AREA)

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• 2021
  • 2021-08-06 FR FR2108564A patent/FR3126086A1/fr active Pending
• 2022
  • 2022-08-03 WO PCT/EP2022/071817 patent/WO2023012216A1/fr not_active Ceased
  • 2022-08-03 JP JP2024506726A patent/JP2024528220A/ja active Pending
  • 2022-08-03 EP EP22761144.9A patent/EP4381916A1/fr active Pending
  • 2022-08-03 US US18/294,439 patent/US20240349625A1/en active Pending

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