FR3126086A1 - Système électronique à écriture non-volatile par contrôle électrique et à lecture par effet Hall - Google Patents

Système électronique à écriture non-volatile par contrôle électrique et à lecture par effet Hall Download PDF

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Publication number
FR3126086A1
FR3126086A1 FR2108564A FR2108564A FR3126086A1 FR 3126086 A1 FR3126086 A1 FR 3126086A1 FR 2108564 A FR2108564 A FR 2108564A FR 2108564 A FR2108564 A FR 2108564A FR 3126086 A1 FR3126086 A1 FR 3126086A1
Authority
FR
France
Prior art keywords
electrode
electronic system
contact
magnetic
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
FR2108564A
Other languages
English (en)
French (fr)
Inventor
Cécile Grezes
Laurent VILA
Jean-Philippe ATTANE
Manuel Bibes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Thales SA
Universite Grenoble Alpes
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Centre National de la Recherche Scientifique CNRS
Commissariat a lEnergie Atomique CEA
Thales SA
Universite Grenoble Alpes
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS, Commissariat a lEnergie Atomique CEA, Thales SA, Universite Grenoble Alpes, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Centre National de la Recherche Scientifique CNRS
Priority to FR2108564A priority Critical patent/FR3126086A1/fr
Priority to US18/294,439 priority patent/US20240349625A1/en
Priority to JP2024506726A priority patent/JP2024528220A/ja
Priority to EP22761144.9A priority patent/EP4381916A1/fr
Priority to PCT/EP2022/071817 priority patent/WO2023012216A1/fr
Publication of FR3126086A1 publication Critical patent/FR3126086A1/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/101—Semiconductor Hall-effect devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/18—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using Hall-effect devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2259—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2273—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2275—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/20—Spin-polarised current-controlled devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
FR2108564A 2021-08-06 2021-08-06 Système électronique à écriture non-volatile par contrôle électrique et à lecture par effet Hall Pending FR3126086A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR2108564A FR3126086A1 (fr) 2021-08-06 2021-08-06 Système électronique à écriture non-volatile par contrôle électrique et à lecture par effet Hall
US18/294,439 US20240349625A1 (en) 2021-08-06 2022-08-03 Electronic system with non-volatile writing by electrical control and with reading by hall effect
JP2024506726A JP2024528220A (ja) 2021-08-06 2022-08-03 電気制御による不揮発性書き込みおよびホール効果による読み出しを備えた電子システム
EP22761144.9A EP4381916A1 (fr) 2021-08-06 2022-08-03 Système électronique à écriture non-volatile par contrôle électrique et à lecture par effet hall
PCT/EP2022/071817 WO2023012216A1 (fr) 2021-08-06 2022-08-03 Système électronique à écriture non-volatile par contrôle électrique et à lecture par effet hall

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2108564 2021-08-06
FR2108564A FR3126086A1 (fr) 2021-08-06 2021-08-06 Système électronique à écriture non-volatile par contrôle électrique et à lecture par effet Hall

Publications (1)

Publication Number Publication Date
FR3126086A1 true FR3126086A1 (fr) 2023-02-10

Family

ID=78820738

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2108564A Pending FR3126086A1 (fr) 2021-08-06 2021-08-06 Système électronique à écriture non-volatile par contrôle électrique et à lecture par effet Hall

Country Status (5)

Country Link
US (1) US20240349625A1 (https=)
EP (1) EP4381916A1 (https=)
JP (1) JP2024528220A (https=)
FR (1) FR3126086A1 (https=)
WO (1) WO2023012216A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119604182B (zh) * 2024-10-31 2025-11-04 中国科学院微电子研究所 自旋突触器件及存内计算装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100027330A1 (en) * 2008-08-01 2010-02-04 Hyun Cheol Koo Magnetic memory device and method for reading magnetic memory cell using spin hall effect
US20160043307A1 (en) * 2014-08-08 2016-02-11 California State University Northridge Concepts for improved magnetic random access memory
WO2017034563A1 (en) * 2015-08-26 2017-03-02 Intel IP Corporation Dual pulse spin hall memory with perpendicular magnetic elements

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0888425A (ja) * 1994-09-19 1996-04-02 Fujitsu Ltd ホール効果磁気センサおよび薄膜磁気ヘッド
US6714446B1 (en) * 2003-05-13 2004-03-30 Motorola, Inc. Magnetoelectronics information device having a compound magnetic free layer
CA2573406A1 (en) * 2004-07-27 2006-02-02 University Of Toronto Tunable magnetic switch
US7902820B2 (en) * 2005-05-03 2011-03-08 Imec Method and apparatus for detecting spatially varying and time-dependent magnetic fields
WO2009073074A1 (en) * 2007-12-05 2009-06-11 Micromem Technologies Inc. Magnetic memory device having a c-shaped structure and method of manufacturing the same
KR102023626B1 (ko) * 2013-01-25 2019-09-20 삼성전자 주식회사 스핀 홀 효과를 이용한 메모리 소자와 그 제조 및 동작방법
US9293160B1 (en) * 2015-02-06 2016-03-22 HGST Netherlands B.V. Magnetic stabilization and scissor design for anomalous hall effect magnetic read sensor
US10686127B2 (en) * 2016-03-28 2020-06-16 National University Of Singapore Antiferromagnet and heavy metal multilayer magnetic systems for switching magnetization using spin-orbit torque
FR3118307B1 (fr) * 2020-12-18 2025-01-17 Commissariat Energie Atomique Dispositif de modification de la direction d’aimantation d’une couche magnétique, système spintronique et procédé associés
WO2023039571A1 (en) * 2021-09-10 2023-03-16 Iowa State University Research Foundation, Inc. Apparatus, systems, and methods for tuning the structure, conductivity, and/or wettability of laser induced graphene for a variety of functions including multiplexed open microfluidic environmental biosensing and energy storage devices

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100027330A1 (en) * 2008-08-01 2010-02-04 Hyun Cheol Koo Magnetic memory device and method for reading magnetic memory cell using spin hall effect
US20160043307A1 (en) * 2014-08-08 2016-02-11 California State University Northridge Concepts for improved magnetic random access memory
WO2017034563A1 (en) * 2015-08-26 2017-03-02 Intel IP Corporation Dual pulse spin hall memory with perpendicular magnetic elements

Also Published As

Publication number Publication date
US20240349625A1 (en) 2024-10-17
WO2023012216A1 (fr) 2023-02-09
JP2024528220A (ja) 2024-07-26
EP4381916A1 (fr) 2024-06-12

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