JP2024527246A5 - - Google Patents

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Publication number
JP2024527246A5
JP2024527246A5 JP2023575951A JP2023575951A JP2024527246A5 JP 2024527246 A5 JP2024527246 A5 JP 2024527246A5 JP 2023575951 A JP2023575951 A JP 2023575951A JP 2023575951 A JP2023575951 A JP 2023575951A JP 2024527246 A5 JP2024527246 A5 JP 2024527246A5
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JP
Japan
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layer
organic
steps include
depositing
inorganic transfer
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JP2023575951A
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English (en)
Japanese (ja)
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JP2024527246A (ja
JP7790752B2 (ja
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Priority claimed from PCT/CA2022/051053 external-priority patent/WO2023272400A1/en
Publication of JP2024527246A publication Critical patent/JP2024527246A/ja
Publication of JP2024527246A5 publication Critical patent/JP2024527246A5/ja
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JP2023575951A 2021-07-02 2022-06-30 有機デバイスをパターニングするための三層感光システム及び方法 Active JP7790752B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202163217776P 2021-07-02 2021-07-02
US63/217,776 2021-07-02
PCT/CA2022/051053 WO2023272400A1 (en) 2021-07-02 2022-06-30 Trilayer photoresist system and method for patterning organic devices

Publications (3)

Publication Number Publication Date
JP2024527246A JP2024527246A (ja) 2024-07-24
JP2024527246A5 true JP2024527246A5 (enExample) 2025-07-02
JP7790752B2 JP7790752B2 (ja) 2025-12-23

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JP2023575951A Active JP7790752B2 (ja) 2021-07-02 2022-06-30 有機デバイスをパターニングするための三層感光システム及び方法

Country Status (6)

Country Link
US (1) US12310165B2 (enExample)
JP (1) JP7790752B2 (enExample)
KR (1) KR102962880B1 (enExample)
CN (1) CN117917209A (enExample)
CA (1) CA3222923A1 (enExample)
WO (1) WO2023272400A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026072534A1 (en) * 2024-09-24 2026-04-02 Nani Lithography Inc. Lithography mask methods and composition

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4732841A (en) 1986-03-24 1988-03-22 Fairchild Semiconductor Corporation Tri-level resist process for fine resolution photolithography
TW439118B (en) 2000-02-10 2001-06-07 Winbond Electronics Corp Multilayer thin photoresist process
US7435671B2 (en) 2006-08-18 2008-10-14 International Business Machines Corporation Trilayer resist scheme for gate etching applications
JP5477547B2 (ja) 2009-06-22 2014-04-23 ソニー株式会社 薄膜トランジスタの製造方法
US9899636B2 (en) 2014-08-01 2018-02-20 Orthogonal, Inc. Photolithographic patterning of organic electronic devices
JP6712188B2 (ja) 2015-07-13 2020-06-17 信越化学工業株式会社 レジスト下層膜形成用組成物及びこれを用いたパターン形成方法
US10243175B2 (en) 2016-02-02 2019-03-26 Samsung Display Co., Ltd. Organic light-emitting apparatus fabricated using a fluoropolymer and method of manufacturing the same
KR102490889B1 (ko) 2016-02-29 2023-01-25 삼성디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법
KR102602193B1 (ko) 2016-08-12 2023-11-15 삼성디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법
KR102775869B1 (ko) * 2017-01-03 2025-03-05 삼성디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법
US10049876B1 (en) 2017-02-13 2018-08-14 International Business Machines Corporation Removal of trilayer resist without damage to underlying structure
KR102278608B1 (ko) * 2017-03-10 2021-07-19 삼성디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법
CN107863451B (zh) 2017-10-30 2019-06-25 武汉华星光电技术有限公司 一种oled阳极的制备方法及oled显示装置的制备方法
KR102421575B1 (ko) 2017-12-01 2022-07-18 삼성디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법
KR102614588B1 (ko) * 2018-08-20 2023-12-18 삼성디스플레이 주식회사 표시 장치의 제조 방법
US20200243791A1 (en) 2019-01-24 2020-07-30 Avalon Holographics Inc. Capping layer process with low temperature photoresist patterning

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