JP2024524583A - ＳｉＣｐ型及び低抵抗の結晶、ブール、ウェハー、及びデバイス、並びにそれらを製造する方法 - Google Patents

ＳｉＣｐ型及び低抵抗の結晶、ブール、ウェハー、及びデバイス、並びにそれらを製造する方法 Download PDF

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JP2024524583A
JP2024524583A JP2024500466A JP2024500466A JP2024524583A JP 2024524583 A JP2024524583 A JP 2024524583A JP 2024500466 A JP2024500466 A JP 2024500466A JP 2024500466 A JP2024500466 A JP 2024500466A JP 2024524583 A JP2024524583 A JP 2024524583A
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ダレン ハンセン，
ダグラス デュークス，
マーク ロボダ，
マーク ランド，
ホアン， カルロス ロホ，
ヴィクター トーレス，
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Pallidus Inc
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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2024500466A 2021-07-09 2022-07-09 ＳｉＣｐ型及び低抵抗の結晶、ブール、ウェハー、及びデバイス、並びにそれらを製造する方法 Pending JP2024524583A (ja)

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US202163220132P 2021-07-09 2021-07-09
US63/220,132 2021-07-09
US202263337088P 2022-04-30 2022-04-30
US63/337,088 2022-04-30
PCT/US2022/036606 WO2023283474A1 (en) 2021-07-09 2022-07-09 Sic p-type, and low resistivity, crystals, boules, wafers and devices, and methods of making the same

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JP2024500465A Pending JP2024525605A (ja) 2021-07-09 2022-07-09 ＳｉＣｐ型及び低抵抗の結晶、ブール、ウェハー、及びデバイス、並びにそれらを製造する方法
JP2024500462A Pending JP2024528580A (ja) 2021-07-09 2022-07-09 ＳｉＣｐ型及び低抵抗の結晶、ブール、ウェハー、及びデバイス、並びにそれらを製造する方法

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JP2024500462A Pending JP2024528580A (ja) 2021-07-09 2022-07-09 ＳｉＣｐ型及び低抵抗の結晶、ブール、ウェハー、及びデバイス、並びにそれらを製造する方法

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JP2019189496A (ja) * 2018-04-26 2019-10-31 国立研究開発法人産業技術総合研究所 炭化珪素エピタキシャルウェハ及び炭化珪素半導体装置

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