JP2024510535A - 基板効果を除去したOLEDoS画素補償回路およびその制御方法 - Google Patents
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Abstract
Description
OLED素子と;第2ノードに連結されたゲート電極に印加されるデータ信号電圧により前記OLED素子を駆動し、電源電圧と第3ノードの間を連結する駆動トランジスタと;現在スキャン信号SCAN[n]によりスイッチングされ、入力されるデータ信号電圧を第1ノードに連結された第2蓄電池に伝達する第1トランジスタと;補償信号によりスイッチングされ、基準電圧を前記第1ノードに連結された第2蓄電池に伝達する第2トランジスタと;前記現在スキャン信号より2タイミング前のスキャン信号SCAN[n-2]によりスイッチングされ、前記基準電圧を第1蓄電池と前記第2蓄電池の間の第2ノードに伝達する第3トランジスタと;前記現在スキャン信号より1タイミング前のスキャン信号SCAN[n-1]によりスイッチングされ、前記第2ノードと前記第3ノードの間を連結する第4トランジスタと;発光信号によりスイッチングされ、一端が接地に連結されたOLED素子の他端と前記第3ノードの間を連結する第5トランジスタと;前記電源電圧と前記第2ノードの間に連結された第1蓄電池と;前記第1ノードと前記第2ノードの間に連結された第2蓄電池と;を含む。
(a)前記第2トランジスタと第3トランジスタをオンさせ(Turn-on)、残りのトランジスタをオフさせる(Turn-off)初期化段階と;(b)前記第2トランジスタをオンさせた状態を維持し、前記第4トランジスタをオンさせ、残りのトランジスタをオフさせる閾値電圧感知段階と;(c)前記第1トランジスタのみをオンさせ、残りのトランジスタをオフさせる情報入力段階と;(d)前記第5トランジスタのみをオンさせ、前記第1~第4トランジスタをオフさせ、前記駆動トランジスタは前記第2ノードの電圧によりスイッチングされ、前記OLED素子を駆動する発光段階と;を含む。
Claims (5)
- OLED素子と;
第2ノードに連結されたゲート電極に印加されるデータ信号電圧により前記OLED素子を駆動し、電源電圧と第3ノードの間を連結する駆動トランジスタと;
現在スキャン信号SCAN[n]によりスイッチングされ、入力されるデータ信号電圧を第1ノードに連結された第2蓄電池に伝達する第1トランジスタと;
補償信号によりスイッチングされ、基準電圧を前記第1ノードに連結された第2蓄電池に伝達する第2トランジスタと;
前記現在スキャン信号より2タイミング前のスキャン信号SCAN[n-2]によりスイッチングされ、前記基準電圧を第1蓄電池と前記第2蓄電池の間の第2ノードに伝達する第3トランジスタと;
前記現在スキャン信号より1タイミング前のスキャン信号SCAN[n-1]によりスイッチングされ、前記第2ノードと前記第3ノードの間を連結する第4トランジスタと;
発光信号によりスイッチングされ、一端が接地に連結されたOLED素子の他端と前記第3ノードの間を連結する第5トランジスタと;
前記電源電圧と前記第2ノードの間に連結された第1蓄電池と;
前記第1ノードと前記第2ノードの間に連結された第2蓄電池と;を含む、OLED画素補償回路。 - 前記第1~第5トランジスタおよび駆動トランジスタは、P型トランジスタであることを特徴とする請求項1に記載のOLED画素補償回路。
- 前記OLED素子は、OLEDoS(OLED on Silicon)であることを特徴とする請求項1に記載のOLED画素補償回路。
- 前記第1~第5トランジスタおよび前記駆動トランジスタのボディ(body)は、前記電源電圧に連結されることを特徴とする請求項1に記載のOLED画素補償回路。
- 請求項1に記載のOLED画素補償回路の制御方法であって:
(a)前記第2トランジスタと第3トランジスタをオンさせ(Turn-on)、残りのトランジスタをオフさせる(Turn-off)初期化段階と;
(b)前記第2トランジスタをオンさせた状態を維持し、前記第4トランジスタをオンさせ、残りのトランジスタをオフさせる閾値電圧感知段階と;
(c)前記第1トランジスタのみをオンさせ、残りのトランジスタをオフさせる情報入力段階と;
(d)前記第5トランジスタのみをオンさせ、前記第1~第4トランジスタをオフさせ、前記駆動トランジスタは前記第2ノードの電圧によりスイッチングされ、前記OLED素子を駆動する発光段階と;を含む、OLED画素補償回路の制御方法。
Applications Claiming Priority (3)
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KR1020210010917A KR102628633B1 (ko) | 2021-01-26 | 2021-01-26 | 기판 효과를 제거한 OLEDoS 화소 보상 회로 및 그 제어 방법 |
KR10-2021-0010917 | 2021-01-26 | ||
PCT/KR2022/000419 WO2022164078A1 (ko) | 2021-01-26 | 2022-01-11 | 기판 효과를 제거한 OLEDoS 화소 보상 회로 및 그 제어 방법 |
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KR101951665B1 (ko) * | 2012-01-27 | 2019-02-26 | 삼성디스플레이 주식회사 | 화소 회로, 그 구동 방법, 및 이를 포함하는 유기 발광 표시 장치 |
KR101341797B1 (ko) | 2012-08-01 | 2013-12-16 | 엘지디스플레이 주식회사 | 유기 발광 다이오드 표시장치 및 그 구동 방법 |
KR20150138527A (ko) * | 2014-05-29 | 2015-12-10 | 삼성디스플레이 주식회사 | 화소 회로 및 이를 포함하는 전계발광 디스플레이 장치 |
KR102663039B1 (ko) * | 2017-02-28 | 2024-05-07 | 엘지디스플레이 주식회사 | 전계 발광 표시장치 |
JP6818837B2 (ja) | 2018-11-07 | 2021-01-20 | キヤノン株式会社 | 表示装置、撮像装置、照明装置、移動体および電子機器 |
JP7154122B2 (ja) | 2018-12-20 | 2022-10-17 | エルジー ディスプレイ カンパニー リミテッド | 発光表示装置 |
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2021
- 2021-01-26 KR KR1020210010917A patent/KR102628633B1/ko active IP Right Grant
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2022
- 2022-01-11 US US18/263,047 patent/US12039933B2/en active Active
- 2022-01-11 WO PCT/KR2022/000419 patent/WO2022164078A1/ko active Application Filing
- 2022-01-11 JP JP2023569593A patent/JP2024510535A/ja active Pending
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US20240087519A1 (en) | 2024-03-14 |
WO2022164078A1 (ko) | 2022-08-04 |
KR20220107797A (ko) | 2022-08-02 |
US12039933B2 (en) | 2024-07-16 |
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