JP2024133686A5 - - Google Patents
Info
- Publication number
- JP2024133686A5 JP2024133686A5 JP2024111356A JP2024111356A JP2024133686A5 JP 2024133686 A5 JP2024133686 A5 JP 2024133686A5 JP 2024111356 A JP2024111356 A JP 2024111356A JP 2024111356 A JP2024111356 A JP 2024111356A JP 2024133686 A5 JP2024133686 A5 JP 2024133686A5
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- voltage
- applying
- distribution function
- energy distribution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2025181382A JP2026012871A (ja) | 2016-12-12 | 2025-10-28 | イオンエネルギー分布関数(iedf)の生成 |
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662433204P | 2016-12-12 | 2016-12-12 | |
| US62/433,204 | 2016-12-12 | ||
| US15/834,939 US10312048B2 (en) | 2016-12-12 | 2017-12-07 | Creating ion energy distribution functions (IEDF) |
| US15/834,939 | 2017-12-07 | ||
| PCT/US2017/065546 WO2018111751A1 (en) | 2016-12-12 | 2017-12-11 | Creating ion energy distribution functions (iedf) |
| JP2019527869A JP7213808B2 (ja) | 2016-12-12 | 2017-12-11 | イオンエネルギー分布関数(iedf)の生成 |
| JP2022181622A JP7703507B2 (ja) | 2016-12-12 | 2022-11-14 | イオンエネルギー分布関数(iedf)の生成 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022181622A Division JP7703507B2 (ja) | 2016-12-12 | 2022-11-14 | イオンエネルギー分布関数(iedf)の生成 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025181382A Division JP2026012871A (ja) | 2016-12-12 | 2025-10-28 | イオンエネルギー分布関数(iedf)の生成 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2024133686A JP2024133686A (ja) | 2024-10-02 |
| JP2024133686A5 true JP2024133686A5 (enExample) | 2025-07-22 |
| JP7766751B2 JP7766751B2 (ja) | 2025-11-10 |
Family
ID=62490319
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019527869A Active JP7213808B2 (ja) | 2016-12-12 | 2017-12-11 | イオンエネルギー分布関数(iedf)の生成 |
| JP2022181622A Active JP7703507B2 (ja) | 2016-12-12 | 2022-11-14 | イオンエネルギー分布関数(iedf)の生成 |
| JP2024111356A Active JP7766751B2 (ja) | 2016-12-12 | 2024-07-11 | イオンエネルギー分布関数(iedf)の生成 |
| JP2025181382A Pending JP2026012871A (ja) | 2016-12-12 | 2025-10-28 | イオンエネルギー分布関数(iedf)の生成 |
Family Applications Before (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019527869A Active JP7213808B2 (ja) | 2016-12-12 | 2017-12-11 | イオンエネルギー分布関数(iedf)の生成 |
| JP2022181622A Active JP7703507B2 (ja) | 2016-12-12 | 2022-11-14 | イオンエネルギー分布関数(iedf)の生成 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025181382A Pending JP2026012871A (ja) | 2016-12-12 | 2025-10-28 | イオンエネルギー分布関数(iedf)の生成 |
Country Status (6)
| Country | Link |
|---|---|
| US (4) | US10312048B2 (enExample) |
| JP (4) | JP7213808B2 (enExample) |
| KR (3) | KR102770824B1 (enExample) |
| CN (2) | CN109997214B (enExample) |
| TW (3) | TWI855415B (enExample) |
| WO (1) | WO2018111751A1 (enExample) |
Families Citing this family (48)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10312048B2 (en) * | 2016-12-12 | 2019-06-04 | Applied Materials, Inc. | Creating ion energy distribution functions (IEDF) |
| US10510575B2 (en) | 2017-09-20 | 2019-12-17 | Applied Materials, Inc. | Substrate support with multiple embedded electrodes |
| US10555412B2 (en) | 2018-05-10 | 2020-02-04 | Applied Materials, Inc. | Method of controlling ion energy distribution using a pulse generator with a current-return output stage |
| US11810761B2 (en) | 2018-07-27 | 2023-11-07 | Eagle Harbor Technologies, Inc. | Nanosecond pulser ADC system |
| US11476145B2 (en) | 2018-11-20 | 2022-10-18 | Applied Materials, Inc. | Automatic ESC bias compensation when using pulsed DC bias |
| KR20250100790A (ko) | 2019-01-22 | 2025-07-03 | 어플라이드 머티어리얼스, 인코포레이티드 | 펄스 전압 파형을 제어하기 위한 피드백 루프 |
| US11508554B2 (en) | 2019-01-24 | 2022-11-22 | Applied Materials, Inc. | High voltage filter assembly |
| US20230352264A1 (en) * | 2019-05-07 | 2023-11-02 | Applied Materials, Inc. | Creating Ion Energy Distribution Functions (IEDF) |
| WO2021011450A1 (en) | 2019-07-12 | 2021-01-21 | Advanced Energy Industries, Inc. | Bias supply with a single controlled switch |
| NL2023935B1 (en) * | 2019-10-02 | 2021-05-31 | Prodrive Tech Bv | Determining an optimal ion energy for plasma processing of a dielectric substrate |
| US11043387B2 (en) | 2019-10-30 | 2021-06-22 | Applied Materials, Inc. | Methods and apparatus for processing a substrate |
| US11742184B2 (en) | 2020-02-28 | 2023-08-29 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
| US12125674B2 (en) | 2020-05-11 | 2024-10-22 | Advanced Energy Industries, Inc. | Surface charge and power feedback and control using a switch mode bias system |
| US11967484B2 (en) | 2020-07-09 | 2024-04-23 | Eagle Harbor Technologies, Inc. | Ion current droop compensation |
| NL2026071B1 (en) * | 2020-07-15 | 2022-03-18 | Prodrive Tech Bv | Voltage waveform generator for plasma assisted processing apparatuses |
| US11462388B2 (en) | 2020-07-31 | 2022-10-04 | Applied Materials, Inc. | Plasma processing assembly using pulsed-voltage and radio-frequency power |
| WO2022072947A1 (en) * | 2020-10-02 | 2022-04-07 | Eagle Harbor Technologies, Inc. | Ion current droop compensation |
| US11901157B2 (en) | 2020-11-16 | 2024-02-13 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| US11798790B2 (en) * | 2020-11-16 | 2023-10-24 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| US11495470B1 (en) | 2021-04-16 | 2022-11-08 | Applied Materials, Inc. | Method of enhancing etching selectivity using a pulsed plasma |
| US11791138B2 (en) | 2021-05-12 | 2023-10-17 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| US11948780B2 (en) | 2021-05-12 | 2024-04-02 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| US20220375013A1 (en) * | 2021-05-21 | 2022-11-24 | Stanislav Chijik | Method And Apparatus For Cannabis and Cannabinoid Rights Certification, Verification, And Tracking System |
| US11967483B2 (en) | 2021-06-02 | 2024-04-23 | Applied Materials, Inc. | Plasma excitation with ion energy control |
| US12148595B2 (en) | 2021-06-09 | 2024-11-19 | Applied Materials, Inc. | Plasma uniformity control in pulsed DC plasma chamber |
| US12525441B2 (en) | 2021-06-09 | 2026-01-13 | Applied Materials, Inc. | Plasma chamber and chamber component cleaning methods |
| US12525433B2 (en) | 2021-06-09 | 2026-01-13 | Applied Materials, Inc. | Method and apparatus to reduce feature charging in plasma processing chamber |
| US11810760B2 (en) | 2021-06-16 | 2023-11-07 | Applied Materials, Inc. | Apparatus and method of ion current compensation |
| US11569066B2 (en) | 2021-06-23 | 2023-01-31 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
| US11776788B2 (en) | 2021-06-28 | 2023-10-03 | Applied Materials, Inc. | Pulsed voltage boost for substrate processing |
| US11476090B1 (en) | 2021-08-24 | 2022-10-18 | Applied Materials, Inc. | Voltage pulse time-domain multiplexing |
| US12106938B2 (en) | 2021-09-14 | 2024-10-01 | Applied Materials, Inc. | Distortion current mitigation in a radio frequency plasma processing chamber |
| US11694876B2 (en) | 2021-12-08 | 2023-07-04 | Applied Materials, Inc. | Apparatus and method for delivering a plurality of waveform signals during plasma processing |
| US12046448B2 (en) | 2022-01-26 | 2024-07-23 | Advanced Energy Industries, Inc. | Active switch on time control for bias supply |
| US11996274B2 (en) | 2022-04-07 | 2024-05-28 | Mks Instruments, Inc. | Real-time, non-invasive IEDF plasma sensor |
| US11972924B2 (en) | 2022-06-08 | 2024-04-30 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
| US12315732B2 (en) | 2022-06-10 | 2025-05-27 | Applied Materials, Inc. | Method and apparatus for etching a semiconductor substrate in a plasma etch chamber |
| US11824542B1 (en) | 2022-06-29 | 2023-11-21 | Eagle Harbor Technologies, Inc. | Bipolar high voltage pulser |
| US12272524B2 (en) | 2022-09-19 | 2025-04-08 | Applied Materials, Inc. | Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics |
| KR20250084155A (ko) | 2022-09-29 | 2025-06-10 | 이글 하버 테크놀로지스, 인코포레이티드 | 고전압 플라즈마 제어 |
| US12111341B2 (en) | 2022-10-05 | 2024-10-08 | Applied Materials, Inc. | In-situ electric field detection method and apparatus |
| CN116066319A (zh) * | 2023-03-14 | 2023-05-05 | 哈尔滨工业大学 | 抑制电推进空心阴极放电振荡的阴极外部电子补偿方法 |
| US12567572B2 (en) | 2023-07-11 | 2026-03-03 | Advanced Energy Industries, Inc. | Plasma behaviors predicted by current measurements during asymmetric bias waveform application |
| JP7545608B1 (ja) * | 2024-05-09 | 2024-09-04 | 株式会社京三製作所 | パルス電源装置 |
| JP7545607B1 (ja) | 2024-05-09 | 2024-09-04 | 株式会社京三製作所 | パルス電源装置 |
| WO2025255272A1 (en) * | 2024-06-07 | 2025-12-11 | Lam Research Corporation | Systems and methods for creating an iedf using a non-sinusoidal generator |
| CN121366847A (zh) * | 2024-07-18 | 2026-01-20 | 北京北方华创微电子装备有限公司 | 一种脉冲偏压信号生成方法以及半导体工艺设备 |
| US20260066226A1 (en) * | 2024-08-29 | 2026-03-05 | Tokyo Electron Limited | Method of sustaining plasma for plasma processing |
Family Cites Families (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1285343A (fr) * | 1961-01-10 | 1962-02-23 | Leybolds Nachfolger E | Dispositif pour la détection d'ions de masses différentes et son procédé de fonctionnement |
| JP4018935B2 (ja) * | 1996-03-01 | 2007-12-05 | 株式会社日立製作所 | プラズマ処理装置 |
| JP3319285B2 (ja) * | 1996-06-05 | 2002-08-26 | 株式会社日立製作所 | プラズマ処理装置及びプラズマ処理方法 |
| US6201208B1 (en) * | 1999-11-04 | 2001-03-13 | Wisconsin Alumni Research Foundation | Method and apparatus for plasma processing with control of ion energy distribution at the substrates |
| US6544895B1 (en) * | 2000-08-17 | 2003-04-08 | Micron Technology, Inc. | Methods for use of pulsed voltage in a plasma reactor |
| US6875700B2 (en) * | 2000-08-29 | 2005-04-05 | Board Of Regents, The University Of Texas System | Ion-Ion plasma processing with bias modulation synchronized to time-modulated discharges |
| JP4319514B2 (ja) | 2002-11-29 | 2009-08-26 | 株式会社日立ハイテクノロジーズ | サグ補償機能付き高周波電源を有するプラズマ処理装置 |
| US7510665B2 (en) * | 2003-08-15 | 2009-03-31 | Applied Materials, Inc. | Plasma generation and control using dual frequency RF signals |
| US7666464B2 (en) * | 2004-10-23 | 2010-02-23 | Applied Materials, Inc. | RF measurement feedback control and diagnostics for a plasma immersion ion implantation reactor |
| KR100782370B1 (ko) | 2006-08-04 | 2007-12-07 | 삼성전자주식회사 | 지연 전기장을 이용한 이온 에너지 분포 분석기에 근거한이온 분석 시스템 |
| US20090004836A1 (en) | 2007-06-29 | 2009-01-01 | Varian Semiconductor Equipment Associates, Inc. | Plasma doping with enhanced charge neutralization |
| US8140292B2 (en) * | 2007-09-18 | 2012-03-20 | Wisconsin Alumni Research Foundation | Method and system for controlling a voltage waveform |
| JP5295833B2 (ja) * | 2008-09-24 | 2013-09-18 | 株式会社東芝 | 基板処理装置および基板処理方法 |
| US9208902B2 (en) | 2008-10-31 | 2015-12-08 | Texas Instruments Incorporated | Bitline leakage detection in memories |
| US9887069B2 (en) * | 2008-12-19 | 2018-02-06 | Lam Research Corporation | Controlling ion energy distribution in plasma processing systems |
| JP5221403B2 (ja) * | 2009-01-26 | 2013-06-26 | 東京エレクトロン株式会社 | プラズマエッチング方法、プラズマエッチング装置および記憶媒体 |
| US9435029B2 (en) * | 2010-08-29 | 2016-09-06 | Advanced Energy Industries, Inc. | Wafer chucking system for advanced plasma ion energy processing systems |
| US9767988B2 (en) * | 2010-08-29 | 2017-09-19 | Advanced Energy Industries, Inc. | Method of controlling the switched mode ion energy distribution system |
| US11615941B2 (en) | 2009-05-01 | 2023-03-28 | Advanced Energy Industries, Inc. | System, method, and apparatus for controlling ion energy distribution in plasma processing systems |
| US9287092B2 (en) * | 2009-05-01 | 2016-03-15 | Advanced Energy Industries, Inc. | Method and apparatus for controlling ion energy distribution |
| US9287086B2 (en) * | 2010-04-26 | 2016-03-15 | Advanced Energy Industries, Inc. | System, method and apparatus for controlling ion energy distribution |
| JP5502879B2 (ja) * | 2009-09-29 | 2014-05-28 | 株式会社東芝 | 基板処理装置 |
| US9309594B2 (en) | 2010-04-26 | 2016-04-12 | Advanced Energy Industries, Inc. | System, method and apparatus for controlling ion energy distribution of a projected plasma |
| US9362089B2 (en) * | 2010-08-29 | 2016-06-07 | Advanced Energy Industries, Inc. | Method of controlling the switched mode ion energy distribution system |
| JP2012104382A (ja) | 2010-11-10 | 2012-05-31 | Tokyo Electron Ltd | プラズマ処理装置及びプラズマ処理方法並びにプラズマ処理のバイアス電圧決定方法 |
| US9210790B2 (en) | 2012-08-28 | 2015-12-08 | Advanced Energy Industries, Inc. | Systems and methods for calibrating a switched mode ion energy distribution system |
| CN104756238B (zh) * | 2012-08-28 | 2017-12-15 | 先进能源工业公司 | 控制开关模式离子能量分布系统的方法 |
| US9685297B2 (en) * | 2012-08-28 | 2017-06-20 | Advanced Energy Industries, Inc. | Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system |
| KR102025540B1 (ko) | 2012-08-28 | 2019-09-26 | 에이이에스 글로벌 홀딩스 피티이 리미티드 | 넓은 다이내믹 레인지 이온 에너지 바이어스 제어; 고속 이온 에너지 스위칭; 이온 에너지 제어와 펄스동작 바이어스 서플라이; 및 가상 전면 패널 |
| KR101952563B1 (ko) * | 2012-08-28 | 2019-02-27 | 어드밴스드 에너지 인더스트리즈 인코포레이티드 | 스위칭 모드 이온 에너지 분포 시스템을 제어하는 방법 |
| US9053908B2 (en) | 2013-09-19 | 2015-06-09 | Lam Research Corporation | Method and apparatus for controlling substrate DC-bias and ion energy and angular distribution during substrate etching |
| KR20160022458A (ko) * | 2014-08-19 | 2016-03-02 | 삼성전자주식회사 | 플라즈마 장비 및 이의 동작 방법 |
| US10049857B2 (en) | 2014-12-04 | 2018-08-14 | Mks Instruments, Inc. | Adaptive periodic waveform controller |
| US9595424B2 (en) * | 2015-03-02 | 2017-03-14 | Lam Research Corporation | Impedance matching circuit for operation with a kilohertz RF generator and a megahertz RF generator to control plasma processes |
| KR101563252B1 (ko) | 2015-03-03 | 2015-10-28 | 주식회사 이노액시스 | 에너지 환수 가능한 디스플레이 드라이버, 에너지 환수 가능한 디스플레이 및 에너지 환수 가능한 디스플레이 구동 방법 |
| US10395895B2 (en) | 2015-08-27 | 2019-08-27 | Mks Instruments, Inc. | Feedback control by RF waveform tailoring for ion energy distribution |
| US9966231B2 (en) | 2016-02-29 | 2018-05-08 | Lam Research Corporation | Direct current pulsing plasma systems |
| US12456611B2 (en) * | 2016-06-13 | 2025-10-28 | Applied Materials, Inc. | Systems and methods for controlling a voltage waveform at a substrate during plasma processing |
| US10026592B2 (en) | 2016-07-01 | 2018-07-17 | Lam Research Corporation | Systems and methods for tailoring ion energy distribution function by odd harmonic mixing |
| PL3548391T3 (pl) | 2016-12-01 | 2021-12-13 | João Marques FERNANDES | Rozwiązanie konstrukcyjne dla otwierania puszki z napojem |
| US10312048B2 (en) * | 2016-12-12 | 2019-06-04 | Applied Materials, Inc. | Creating ion energy distribution functions (IEDF) |
| US11011351B2 (en) | 2018-07-13 | 2021-05-18 | Lam Research Corporation | Monoenergetic ion generation for controlled etch |
-
2017
- 2017-12-07 US US15/834,939 patent/US10312048B2/en active Active
- 2017-12-11 JP JP2019527869A patent/JP7213808B2/ja active Active
- 2017-12-11 KR KR1020237014022A patent/KR102770824B1/ko active Active
- 2017-12-11 CN CN201780073879.4A patent/CN109997214B/zh active Active
- 2017-12-11 CN CN202011589113.1A patent/CN112701025B/zh active Active
- 2017-12-11 KR KR1020197019342A patent/KR102335200B1/ko active Active
- 2017-12-11 WO PCT/US2017/065546 patent/WO2018111751A1/en not_active Ceased
- 2017-12-11 KR KR1020217039273A patent/KR102527251B1/ko active Active
- 2017-12-12 TW TW111141611A patent/TWI855415B/zh active
- 2017-12-12 TW TW113129778A patent/TW202503813A/zh unknown
- 2017-12-12 TW TW106143511A patent/TWI784991B/zh active
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2019
- 2019-05-07 US US16/405,377 patent/US10685807B2/en active Active
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2020
- 2020-05-05 US US16/867,034 patent/US11069504B2/en active Active
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2021
- 2021-07-16 US US17/377,639 patent/US11728124B2/en active Active
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2022
- 2022-11-14 JP JP2022181622A patent/JP7703507B2/ja active Active
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2024
- 2024-07-11 JP JP2024111356A patent/JP7766751B2/ja active Active
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2025
- 2025-10-28 JP JP2025181382A patent/JP2026012871A/ja active Pending
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