CN109997214B - 产生离子能量分布函数(iedf) - Google Patents

产生离子能量分布函数(iedf) Download PDF

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Publication number
CN109997214B
CN109997214B CN201780073879.4A CN201780073879A CN109997214B CN 109997214 B CN109997214 B CN 109997214B CN 201780073879 A CN201780073879 A CN 201780073879A CN 109997214 B CN109997214 B CN 109997214B
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voltage
wafer
electrode
ion
distribution function
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Chinese (zh)
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CN109997214A (zh
Inventor
L·多尔夫
T·高
O·卢艾莱
O·朱伯特
P·A·克劳斯
R·丁德萨
J·H·罗杰斯
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Applied Materials Inc
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Applied Materials Inc
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/248—Components associated with high voltage supply
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
  • Physical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN201780073879.4A 2016-12-12 2017-12-11 产生离子能量分布函数(iedf) Active CN109997214B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202011589113.1A CN112701025B (zh) 2016-12-12 2017-12-11 产生离子能量分布函数(iedf)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662433204P 2016-12-12 2016-12-12
US62/433,204 2016-12-12
US15/834,939 US10312048B2 (en) 2016-12-12 2017-12-07 Creating ion energy distribution functions (IEDF)
US15/834,939 2017-12-07
PCT/US2017/065546 WO2018111751A1 (en) 2016-12-12 2017-12-11 Creating ion energy distribution functions (iedf)

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202011589113.1A Division CN112701025B (zh) 2016-12-12 2017-12-11 产生离子能量分布函数(iedf)

Publications (2)

Publication Number Publication Date
CN109997214A CN109997214A (zh) 2019-07-09
CN109997214B true CN109997214B (zh) 2023-08-22

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CN201780073879.4A Active CN109997214B (zh) 2016-12-12 2017-12-11 产生离子能量分布函数(iedf)
CN202011589113.1A Active CN112701025B (zh) 2016-12-12 2017-12-11 产生离子能量分布函数(iedf)

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US (4) US10312048B2 (enExample)
JP (4) JP7213808B2 (enExample)
KR (3) KR102770824B1 (enExample)
CN (2) CN109997214B (enExample)
TW (3) TWI855415B (enExample)
WO (1) WO2018111751A1 (enExample)

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Publication number Publication date
KR102335200B1 (ko) 2021-12-02
US20200266022A1 (en) 2020-08-20
KR102527251B1 (ko) 2023-04-27
JP2023022086A (ja) 2023-02-14
US11069504B2 (en) 2021-07-20
CN112701025B (zh) 2024-03-26
KR20210150603A (ko) 2021-12-10
CN112701025A (zh) 2021-04-23
JP2026012871A (ja) 2026-01-27
TW201833965A (zh) 2018-09-16
WO2018111751A1 (en) 2018-06-21
US20190259562A1 (en) 2019-08-22
US11728124B2 (en) 2023-08-15
CN109997214A (zh) 2019-07-09
TW202503813A (zh) 2025-01-16
TW202312210A (zh) 2023-03-16
JP7703507B2 (ja) 2025-07-07
KR20230062662A (ko) 2023-05-09
US20180166249A1 (en) 2018-06-14
KR102770824B1 (ko) 2025-02-19
JP7213808B2 (ja) 2023-01-27
US10312048B2 (en) 2019-06-04
JP2024133686A (ja) 2024-10-02
US20210343496A1 (en) 2021-11-04
JP2020501351A (ja) 2020-01-16
TWI855415B (zh) 2024-09-11
JP7766751B2 (ja) 2025-11-10
US10685807B2 (en) 2020-06-16
TWI784991B (zh) 2022-12-01
KR20190083007A (ko) 2019-07-10

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