JP2024102696A5 - - Google Patents

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Publication number
JP2024102696A5
JP2024102696A5 JP2023006764A JP2023006764A JP2024102696A5 JP 2024102696 A5 JP2024102696 A5 JP 2024102696A5 JP 2023006764 A JP2023006764 A JP 2023006764A JP 2023006764 A JP2023006764 A JP 2023006764A JP 2024102696 A5 JP2024102696 A5 JP 2024102696A5
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JP
Japan
Prior art keywords
trench
trenches
interval
semiconductor substrate
mentioned embodiment
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Pending
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JP2023006764A
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English (en)
Japanese (ja)
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JP2024102696A (ja
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Priority to JP2023006764A priority Critical patent/JP2024102696A/ja
Priority claimed from JP2023006764A external-priority patent/JP2024102696A/ja
Priority to US18/533,354 priority patent/US20240250166A1/en
Priority to CN202410066751.7A priority patent/CN118367009A/zh
Publication of JP2024102696A publication Critical patent/JP2024102696A/ja
Publication of JP2024102696A5 publication Critical patent/JP2024102696A5/ja
Pending legal-status Critical Current

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JP2023006764A 2023-01-19 2023-01-19 トレンチゲート型半導体装置とその製造方法 Pending JP2024102696A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2023006764A JP2024102696A (ja) 2023-01-19 2023-01-19 トレンチゲート型半導体装置とその製造方法
US18/533,354 US20240250166A1 (en) 2023-01-19 2023-12-08 Trench gate semiconductor device and method for manufacturing the same
CN202410066751.7A CN118367009A (zh) 2023-01-19 2024-01-17 沟槽栅极型半导体装置及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2023006764A JP2024102696A (ja) 2023-01-19 2023-01-19 トレンチゲート型半導体装置とその製造方法

Publications (2)

Publication Number Publication Date
JP2024102696A JP2024102696A (ja) 2024-07-31
JP2024102696A5 true JP2024102696A5 (https=) 2025-05-07

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ID=91882279

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JP2023006764A Pending JP2024102696A (ja) 2023-01-19 2023-01-19 トレンチゲート型半導体装置とその製造方法

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US (1) US20240250166A1 (https=)
JP (1) JP2024102696A (https=)
CN (1) CN118367009A (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2026004763A (ja) 2024-06-26 2026-01-15 セイコーエプソン株式会社 物理量検出装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002246554A (ja) * 2001-02-19 2002-08-30 Toshiba Corp 半導体装置の製造方法
CN1812127A (zh) * 2004-12-14 2006-08-02 松下电器产业株式会社 纵型栅极半导体装置及其制造方法
JP2008306047A (ja) * 2007-06-08 2008-12-18 Toyota Motor Corp 半導体装置の製造方法と半導体装置
JP5724635B2 (ja) * 2011-05-26 2015-05-27 株式会社デンソー 半導体装置およびその製造方法
JP2013251397A (ja) * 2012-05-31 2013-12-12 Denso Corp 半導体装置
JP2015176927A (ja) * 2014-03-13 2015-10-05 株式会社東芝 半導体装置および絶縁ゲート型バイポーラトランジスタ
WO2018030440A1 (ja) * 2016-08-12 2018-02-15 富士電機株式会社 半導体装置および半導体装置の製造方法
JP6624101B2 (ja) * 2017-02-03 2019-12-25 株式会社デンソー 半導体装置
JP2019012836A (ja) * 2018-09-05 2019-01-24 株式会社タムラ製作所 半導体素子

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