JP2024019774A - 成膜方法および成膜装置 - Google Patents
成膜方法および成膜装置 Download PDFInfo
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- JP2024019774A JP2024019774A JP2022122440A JP2022122440A JP2024019774A JP 2024019774 A JP2024019774 A JP 2024019774A JP 2022122440 A JP2022122440 A JP 2022122440A JP 2022122440 A JP2022122440 A JP 2022122440A JP 2024019774 A JP2024019774 A JP 2024019774A
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- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
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- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Electromagnetism (AREA)
- Carbon And Carbon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022122440A JP2024019774A (ja) | 2022-08-01 | 2022-08-01 | 成膜方法および成膜装置 |
| PCT/JP2023/026200 WO2024029320A1 (ja) | 2022-08-01 | 2023-07-18 | 成膜方法および成膜装置 |
| KR1020257005519A KR20250040701A (ko) | 2022-08-01 | 2023-07-18 | 성막 방법 및 성막 장치 |
| US19/042,169 US20250191907A1 (en) | 2022-08-01 | 2025-01-31 | Film forming method and film forming apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022122440A JP2024019774A (ja) | 2022-08-01 | 2022-08-01 | 成膜方法および成膜装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2024019774A true JP2024019774A (ja) | 2024-02-14 |
| JP2024019774A5 JP2024019774A5 (enExample) | 2025-05-13 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022122440A Pending JP2024019774A (ja) | 2022-08-01 | 2022-08-01 | 成膜方法および成膜装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20250191907A1 (enExample) |
| JP (1) | JP2024019774A (enExample) |
| KR (1) | KR20250040701A (enExample) |
| WO (1) | WO2024029320A1 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2024163650A (ja) * | 2023-05-12 | 2024-11-22 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8030212B2 (en) | 2007-09-26 | 2011-10-04 | Eastman Kodak Company | Process for selective area deposition of inorganic materials |
| US8293658B2 (en) | 2010-02-17 | 2012-10-23 | Asm America, Inc. | Reactive site deactivation against vapor deposition |
| KR102545880B1 (ko) | 2017-04-12 | 2023-06-20 | 도쿄엘렉트론가부시키가이샤 | 유전체 기판 상에서의 유전체 물질의 선택적인 수직 성장 방법 |
| US10847363B2 (en) * | 2017-11-20 | 2020-11-24 | Tokyo Electron Limited | Method of selective deposition for forming fully self-aligned vias |
| US11081447B2 (en) * | 2019-09-17 | 2021-08-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Graphene-assisted low-resistance interconnect structures and methods of formation thereof |
| JP2023514831A (ja) * | 2020-02-19 | 2023-04-11 | ラム リサーチ コーポレーション | グラフェン集積化 |
| CN116097419A (zh) * | 2020-06-23 | 2023-05-09 | 朗姆研究公司 | 使用石墨烯作为抑制剂的选择性沉积 |
| KR20220028935A (ko) | 2020-08-31 | 2022-03-08 | 삼성전자주식회사 | 인터커넥트 구조체의 형성방법 |
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| WO2024029320A1 (ja) | 2024-02-08 |
| KR20250040701A (ko) | 2025-03-24 |
| US20250191907A1 (en) | 2025-06-12 |
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