JP2023541796A - 基板ウェハ上にエピタキシャル層を堆積させるための方法 - Google Patents
基板ウェハ上にエピタキシャル層を堆積させるための方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 29
- 238000000151 deposition Methods 0.000 title claims abstract description 24
- 235000012431 wafers Nutrition 0.000 title description 82
- 239000012808 vapor phase Substances 0.000 claims abstract description 4
- 238000010438 heat treatment Methods 0.000 claims abstract description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 230000008021 deposition Effects 0.000 description 12
- 238000005314 correlation function Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000005259 measurement Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 2
- 230000007717 exclusion Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- C—CHEMISTRY; METALLURGY
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
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- H01L22/10—Measuring as part of the manufacturing process
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Abstract
Description
エレクトロニクス産業における、要求の厳しい用途のために、エピタキシャルにコーティングされた半導体ウェハ、特にシリコンの層でエピタキシャルにコーティングされた、単結晶シリコンで作られた基板ウェハが必要とされる。
基板ウェハの縁部に厚み特性値を縁部位置の関数として割り当てる、基板ウェハの縁部形状を測定することと、
エピタキシャル層を堆積するために装置のサセプタのポケット内に基板ウェハを配置することとを含み、ポケットは、円周を有する境界によって囲まれ、本方法はさらに、
基板ウェハを加熱することと、
基板ウェハ上に処理ガスを通過させることとを含み、
基板ウェハからポケットの境界までの距離が、より厚い縁部の厚み特性値を有する縁部位置のおいての方が、より薄い縁部の厚み特性値を有する縁部位置においてよりも小さくなるように、ポケット内に基板ウェハを配置することによって、特徴付けられる。
図1は、サセプタ3のポケット4内に堆積され、相対的に厚い縁部5と、相対的に薄い、その反対側の縁部6とを有する基板ウェハ1の断面図(垂直断面)を示す。基板ウェハ1は、ポケット4の中心ではなく偏心して位置し、したがって、より厚い縁部5は、より薄い縁部6よりも、ポケットの境界7からの距離が短い。この構成の結果、距離が小さい場合、エピタキシャル層の堆積中の材料の成長速度は、距離が大きい場合よりも遅くなる。
1 基板ウェハ
2 エピタキシャル層
3 サセプタ
4 ポケット
5 基板ウェハの厚い縁部
6 基板ウェハの薄い縁部
7 ポケットの外側境界
8 マップ
E 偏心度
ESFQR ESFQR値
ΔESFQR ESFQR値と目標値との間の差
Δt 厚みtと目標厚みとの差
d 直径
WP 縁部位置
Claims (5)
- 基板ウェハ上に気相からエピタキシャル層を堆積させるための方法であって、
前記基板ウェハの縁部に厚み特性値を縁部位置の関数として割り当てる、前記基板ウェハの縁部形状を測定することと、
前記エピタキシャル層を堆積するために装置のサセプタのポケット内に前記基板ウェハを配置することとを含み、前記ポケットは、円周を有する境界によって囲まれ、前記方法はさらに、
前記基板ウェハを加熱することと、
前記基板ウェハ上に処理ガスを通過させることとを含み、
前記基板ウェハから前記ポケットの前記境界までの距離が、より厚い縁部の前記厚み特性値を有する縁部位置のおいての方が、より薄い縁部の前記厚み特性値を有する縁部位置においてよりも小さくなるように、前記ポケット内に前記基板ウェハを配置することによって、特徴付けられる、基板ウェハ上に気相からエピタキシャル層を堆積させるための方法。 - 前記厚み特性値としてESFQRまたはZDDを測定することによって特徴付けられる、請求項1に記載の方法。
- ロボットを用いて前記基板ウェハを配置することによって特徴付けられる、請求項1または2に記載の方法。
- カメラシステムを用いて前記ポケット内の前記基板ウェハの位置を監視することによって特徴付けられる、請求項1から3のいずれか1項に記載の方法。
- 単結晶シリコンウェハ上にシリコンのエピタキシャル層を堆積することによって特徴付けられる、請求項1から4のいずれか1項に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP20191322.5A EP3957776A1 (de) | 2020-08-17 | 2020-08-17 | Verfahren zum abscheiden einer epitaktischen schicht auf einer substratscheibe |
EP20191322.5 | 2020-08-17 | ||
PCT/EP2021/070393 WO2022037889A1 (de) | 2020-08-17 | 2021-07-21 | Verfahren zum abscheiden einer epitaktischen schicht auf einer substratscheibe |
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JP2023541796A true JP2023541796A (ja) | 2023-10-04 |
JP7537008B2 JP7537008B2 (ja) | 2024-08-20 |
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US (1) | US20230265581A1 (ja) |
EP (1) | EP3957776A1 (ja) |
JP (1) | JP7537008B2 (ja) |
KR (1) | KR20230045059A (ja) |
CN (1) | CN116057202A (ja) |
IL (1) | IL300448A (ja) |
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WO (1) | WO2022037889A1 (ja) |
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US6153260A (en) | 1997-04-11 | 2000-11-28 | Applied Materials, Inc. | Method for heating exhaust gas in a substrate reactor |
JP2002009002A (ja) | 2000-06-26 | 2002-01-11 | Nec Kansai Ltd | 薄膜形成装置 |
JP3897963B2 (ja) | 2000-07-25 | 2007-03-28 | 株式会社Sumco | 半導体ウェーハおよびその製造方法 |
JP2002261023A (ja) | 2001-02-28 | 2002-09-13 | Shin Etsu Handotai Co Ltd | エピタキシャルウェーハの製造方法 |
JP4899445B2 (ja) | 2005-11-22 | 2012-03-21 | 信越半導体株式会社 | エピタキシャルウェーハの製造方法及びエピタキシャルウェーハ |
JP4868522B2 (ja) | 2006-03-30 | 2012-02-01 | Sumco Techxiv株式会社 | エピタキシャルウェーハの製造方法及び製造装置 |
KR101038876B1 (ko) | 2007-12-24 | 2011-06-02 | 삼성엘이디 주식회사 | 화학기상증착용 웨이퍼 및 이를 제조하는 방법 |
US20090214843A1 (en) * | 2008-02-26 | 2009-08-27 | Siltronic Corporation | Controlled edge resistivity in a silicon wafer |
JP5098873B2 (ja) | 2008-07-30 | 2012-12-12 | 株式会社Sumco | 気相成長装置用のサセプタ及び気相成長装置 |
DE102009010555A1 (de) | 2009-02-25 | 2010-09-02 | Siltronic Ag | Verfahren zum Erkennen einer Fehllage einer Halbleiterscheibe während einer thermischen Behandlung |
DE102010029756B4 (de) * | 2010-06-07 | 2023-09-21 | Sicrystal Gmbh | Herstellungsverfahren für einen SiC-Volumeneinkristall mit großer Facette und einkristallines SiC-Substrat mit homogener Widerstandsverteilung |
KR101496572B1 (ko) * | 2012-10-16 | 2015-02-26 | 주식회사 엘지실트론 | 에피택셜 성장용 서셉터 및 에피택셜 성장방법 |
JP5943201B2 (ja) | 2012-12-26 | 2016-06-29 | 信越半導体株式会社 | 偏芯評価方法及びエピタキシャルウェーハの製造方法 |
DE102013203743A1 (de) * | 2013-03-05 | 2014-09-11 | Heraeus Precious Metals Gmbh & Co. Kg | Verfahren zur Herstellung hochreinen Platinpulvers sowie Platinpulver erhältlich nach diesem Verfahren und Verwendung |
JP6132163B2 (ja) | 2014-04-10 | 2017-05-24 | 信越半導体株式会社 | 偏芯評価方法及びエピタキシャルウェーハの製造方法 |
DE102015220924B4 (de) * | 2015-10-27 | 2018-09-27 | Siltronic Ag | Suszeptor zum Halten einer Halbleiterscheibe mit Orientierungskerbe, Verfahren zum Abscheiden einer Schicht auf einer Halbleiterscheibe und Halbleiterscheibe |
KR101810643B1 (ko) | 2016-02-02 | 2017-12-19 | 에스케이실트론 주식회사 | 에피텍셜 웨이퍼의 평탄도 제어 방법 |
JP6832770B2 (ja) | 2017-03-28 | 2021-02-24 | 昭和電工株式会社 | 熱化学蒸着装置の基板ホルダー |
DE102017212799A1 (de) * | 2017-07-26 | 2019-01-31 | Siltronic Ag | Epitaktisch beschichtete Halbleiterscheibe aus einkristallinem Silizium und Verfahren zu deren Herstellung |
JP6968670B2 (ja) | 2017-11-17 | 2021-11-17 | 信越半導体株式会社 | サセプタ、エピタキシャルウェーハの製造方法 |
JP6965861B2 (ja) | 2018-09-28 | 2021-11-10 | 信越半導体株式会社 | 気相成長装置 |
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- 2021-07-21 WO PCT/EP2021/070393 patent/WO2022037889A1/de active Application Filing
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US20230265581A1 (en) | 2023-08-24 |
IL300448A (en) | 2023-04-01 |
JP7537008B2 (ja) | 2024-08-20 |
TWI777712B (zh) | 2022-09-11 |
CN116057202A (zh) | 2023-05-02 |
WO2022037889A1 (de) | 2022-02-24 |
KR20230045059A (ko) | 2023-04-04 |
EP3957776A1 (de) | 2022-02-23 |
TW202221163A (zh) | 2022-06-01 |
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