JP2023526833A5 - - Google Patents

Info

Publication number
JP2023526833A5
JP2023526833A5 JP2022570399A JP2022570399A JP2023526833A5 JP 2023526833 A5 JP2023526833 A5 JP 2023526833A5 JP 2022570399 A JP2022570399 A JP 2022570399A JP 2022570399 A JP2022570399 A JP 2022570399A JP 2023526833 A5 JP2023526833 A5 JP 2023526833A5
Authority
JP
Japan
Prior art keywords
subset
led
substrate
backplane
subpixel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022570399A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023526833A (ja
JP7611271B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2021/031868 external-priority patent/WO2021236382A1/en
Publication of JP2023526833A publication Critical patent/JP2023526833A/ja
Publication of JP2023526833A5 publication Critical patent/JP2023526833A5/ja
Application granted granted Critical
Publication of JP7611271B2 publication Critical patent/JP7611271B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2022570399A 2020-05-18 2021-05-11 直視型ディスプレイのためのサブピクセル発光ダイオードおよびその製造方法 Active JP7611271B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202063026454P 2020-05-18 2020-05-18
US63/026,454 2020-05-18
PCT/US2021/031868 WO2021236382A1 (en) 2020-05-18 2021-05-11 Subpixel light emitting diodes for direct view display and methods of making the same

Publications (3)

Publication Number Publication Date
JP2023526833A JP2023526833A (ja) 2023-06-23
JP2023526833A5 true JP2023526833A5 (enExample) 2024-05-22
JP7611271B2 JP7611271B2 (ja) 2025-01-09

Family

ID=78511893

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022570399A Active JP7611271B2 (ja) 2020-05-18 2021-05-11 直視型ディスプレイのためのサブピクセル発光ダイオードおよびその製造方法

Country Status (7)

Country Link
US (2) US11973172B2 (enExample)
EP (1) EP4154324B1 (enExample)
JP (1) JP7611271B2 (enExample)
KR (1) KR20230013072A (enExample)
CN (1) CN115989590A (enExample)
TW (1) TWI893113B (enExample)
WO (1) WO2021236382A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12299641B2 (en) * 2018-08-03 2025-05-13 Cirqil, Inc. Systems and methods for organizing and sharing contact and calendar information
CN115989590A (zh) 2020-05-18 2023-04-18 纳诺西斯有限公司 用于直视型显示器的次像素发光二极管及其制造方法
CN114927458B (zh) * 2022-05-26 2025-07-25 广东省科学院半导体研究所 芯片转移方法、Micro-LED显示器件及制作方法
WO2024247230A1 (ja) * 2023-06-01 2024-12-05 日本電信電話株式会社 半導体光電極の製造方法

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000002733A (ko) 1998-06-23 2000-01-15 구자홍 광자기 기록 매체
KR20110039313A (ko) 2008-07-07 2011-04-15 글로 에이비 나노구조 led
CN102903804B (zh) * 2011-07-25 2015-12-16 财团法人工业技术研究院 发光元件的转移方法以及发光元件阵列
US8350251B1 (en) 2011-09-26 2013-01-08 Glo Ab Nanowire sized opto-electronic structure and method for manufacturing the same
JP2015532014A (ja) 2012-09-18 2015-11-05 グロ アーベーGlo Ab ナノピラミッドサイズ光電構造及びそれを製造するための方法
WO2015095049A1 (en) 2013-12-17 2015-06-25 Glo Ab Iii-nitride nanowire led with strain modified surface active region and method of making thereof
JP6823893B2 (ja) * 2014-12-19 2021-02-03 グロ アーベーGlo Ab バックプレーン上に発光ダイオードアレイを生成する方法
JP6806774B2 (ja) * 2015-12-07 2021-01-06 グロ アーベーGlo Ab 基板間led移送のための、孤立iii族窒化物光アイランド上のレーザリフトオフ
US10714464B2 (en) * 2016-02-16 2020-07-14 Glo Ab Method of selectively transferring LED die to a backplane using height controlled bonding structures
JP2019511838A (ja) 2016-04-04 2019-04-25 グロ アーベーGlo Ab ダイ移送用のバックプレーン通過レーザ照射
US10236447B2 (en) 2016-05-24 2019-03-19 Glo Ab Selective die repair on a light emitting device assembly
US10325893B2 (en) * 2016-12-13 2019-06-18 Hong Kong Beida Jade Bird Display Limited Mass transfer of micro structures using adhesives
DE102017100812B4 (de) * 2017-01-17 2024-04-25 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil
TWI756384B (zh) * 2017-03-16 2022-03-01 美商康寧公司 用於大量轉移微型led的方法及製程
WO2018223391A1 (en) * 2017-06-09 2018-12-13 Goertek. Inc Micro-led array transfer method, manufacturing method and display device
US10707374B2 (en) 2017-09-15 2020-07-07 Glo Ab Etendue enhancement for light emitting diode subpixels
US11362238B2 (en) 2017-10-06 2022-06-14 Nanosys, Inc. Light emitting diode containing oxidized metal contacts
TWI650854B (zh) * 2017-10-31 2019-02-11 英屬開曼群島商錼創科技股份有限公司 微型發光二極體顯示面板及其製造方法
TWI635605B (zh) 2017-11-02 2018-09-11 Pixeled Display Co., Ltd. 微型發光二極體顯示面板
US11404400B2 (en) * 2018-01-24 2022-08-02 Apple Inc. Micro LED based display panel
KR102433873B1 (ko) * 2018-01-29 2022-08-19 삼성전자주식회사 Led 패널 및 led 패널의 제조 방법
US11069837B2 (en) * 2018-04-20 2021-07-20 Glo Ab Sub pixel light emitting diodes for direct view display and methods of making the same
US11024220B2 (en) * 2018-05-31 2021-06-01 Invensas Corporation Formation of a light-emitting diode display
CN108807265B (zh) * 2018-07-09 2020-01-31 厦门乾照光电股份有限公司 Micro-LED巨量转移方法、显示装置及制作方法
KR102617962B1 (ko) * 2018-10-02 2023-12-27 삼성전자주식회사 반도체 발광소자
US11158761B2 (en) * 2019-05-07 2021-10-26 Facebook Technologies, Llc Bonding methods for light emitting diodes
KR102881826B1 (ko) * 2019-12-19 2025-11-07 엘지전자 주식회사 발광 소자를 이용한 디스플레이 장치 및 그 제조 방법
JP7153183B2 (ja) * 2020-01-29 2022-10-14 日亜化学工業株式会社 発光装置の製造方法
CN115989590A (zh) 2020-05-18 2023-04-18 纳诺西斯有限公司 用于直视型显示器的次像素发光二极管及其制造方法

Similar Documents

Publication Publication Date Title
JP2023526833A5 (enExample)
US10636937B2 (en) Method for manufacturing light-emitting module
CN107078132B (zh) 硅基彩色iled显示器
CN106058010A (zh) 微发光二极管阵列的转印方法
WO2019205437A1 (zh) Micro LED显示面板的制作方法及Micro LED显示面板
TWI483434B (zh) 發光二極體的轉置基材與使用該轉置基材的發光裝置製造方法
US9647029B2 (en) Light-emitting device and manufacturing method of a display
WO2017219413A1 (zh) 微发光二极管显示面板
CN106098697A (zh) 微发光二极管显示面板及其制作方法
CN106229326A (zh) 在曲面基板上转印微发光二极管的方法及曲面微发光二极管显示面板的制作方法
US11069663B2 (en) Method of producing an optoelectronic semiconductor component, and optoelectronic semiconductor component
JP2010205943A5 (enExample)
CN105981169A (zh) 用于形成超微型led及照明结构的工艺
JP2008211255A (ja) 発光装置
WO2017219415A1 (zh) 3d显示装置
CN107408791A8 (zh) 一种密集光源光学系统
JP2019536278A5 (enExample)
CN106663679A (zh) 发光二极管和反射器
CN110676280A (zh) 显示面板及显示面板制作方法
TWI791693B (zh) 製造發光二極體組件的方法及發光二極體組件
WO2020042652A1 (zh) Led显示器件及其制造方法、led显示面板
CN111710689A (zh) 一种高显色性的Micro LED封装结构
CN115810622A (zh) Led芯片及其制作方法、电子设备及其制作方法
WO2020100449A1 (ja) マイクロled表示装置及びマイクロled表示装置の配線方法
WO2016161803A1 (zh) 基于二次光学设计的柔性荧光基板及led光源