JP2023169593A5 - - Google Patents

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Publication number
JP2023169593A5
JP2023169593A5 JP2022080809A JP2022080809A JP2023169593A5 JP 2023169593 A5 JP2023169593 A5 JP 2023169593A5 JP 2022080809 A JP2022080809 A JP 2022080809A JP 2022080809 A JP2022080809 A JP 2022080809A JP 2023169593 A5 JP2023169593 A5 JP 2023169593A5
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JP
Japan
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trench
contact opening
main surface
conductive film
contact
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JP2022080809A
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English (en)
Japanese (ja)
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JP2023169593A (ja
JP7731320B2 (ja
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Priority to JP2022080809A priority Critical patent/JP7731320B2/ja
Priority claimed from JP2022080809A external-priority patent/JP7731320B2/ja
Priority to US18/177,478 priority patent/US20230378281A1/en
Priority to CN202310543280.XA priority patent/CN117080067A/zh
Publication of JP2023169593A publication Critical patent/JP2023169593A/ja
Publication of JP2023169593A5 publication Critical patent/JP2023169593A5/ja
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Publication of JP7731320B2 publication Critical patent/JP7731320B2/ja
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JP2022080809A 2022-05-17 2022-05-17 半導体装置の製造方法 Active JP7731320B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2022080809A JP7731320B2 (ja) 2022-05-17 2022-05-17 半導体装置の製造方法
US18/177,478 US20230378281A1 (en) 2022-05-17 2023-03-02 Manufacturing method of semiconductor device
CN202310543280.XA CN117080067A (zh) 2022-05-17 2023-05-15 半导体器件的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2022080809A JP7731320B2 (ja) 2022-05-17 2022-05-17 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2023169593A JP2023169593A (ja) 2023-11-30
JP2023169593A5 true JP2023169593A5 (enExample) 2024-09-30
JP7731320B2 JP7731320B2 (ja) 2025-08-29

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ID=88712238

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JP2022080809A Active JP7731320B2 (ja) 2022-05-17 2022-05-17 半導体装置の製造方法

Country Status (3)

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US (1) US20230378281A1 (enExample)
JP (1) JP7731320B2 (enExample)
CN (1) CN117080067A (enExample)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4608133B2 (ja) * 2001-06-08 2011-01-05 ルネサスエレクトロニクス株式会社 縦型ｍｏｓｆｅｔを備えた半導体装置およびその製造方法
JP6786316B2 (ja) * 2016-09-12 2020-11-18 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2019129289A (ja) * 2018-01-26 2019-08-01 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

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