JP2023167864A - 半導体受光素子 - Google Patents

半導体受光素子 Download PDF

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Publication number
JP2023167864A
JP2023167864A JP2022079384A JP2022079384A JP2023167864A JP 2023167864 A JP2023167864 A JP 2023167864A JP 2022079384 A JP2022079384 A JP 2022079384A JP 2022079384 A JP2022079384 A JP 2022079384A JP 2023167864 A JP2023167864 A JP 2023167864A
Authority
JP
Japan
Prior art keywords
semiconductor layer
semiconductor
receiving element
light receiving
semiconductor light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022079384A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023167864A5 (https=
Inventor
桂基 田口
Keiki TAGUCHI
兆 石原
Hajime Ishihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Priority to JP2022079384A priority Critical patent/JP2023167864A/ja
Priority to US18/860,184 priority patent/US20250287721A1/en
Priority to PCT/JP2023/001523 priority patent/WO2023218698A1/ja
Priority to GB2416982.3A priority patent/GB2634410A/en
Priority to CN202380040000.1A priority patent/CN119183613A/zh
Priority to DE112023002255.0T priority patent/DE112023002255T5/de
Publication of JP2023167864A publication Critical patent/JP2023167864A/ja
Publication of JP2023167864A5 publication Critical patent/JP2023167864A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/241—Electrodes for devices having potential barriers comprising ring electrodes

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  • Light Receiving Elements (AREA)
JP2022079384A 2022-05-13 2022-05-13 半導体受光素子 Pending JP2023167864A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2022079384A JP2023167864A (ja) 2022-05-13 2022-05-13 半導体受光素子
US18/860,184 US20250287721A1 (en) 2022-05-13 2023-01-19 Semiconductor light-receiving element
PCT/JP2023/001523 WO2023218698A1 (ja) 2022-05-13 2023-01-19 半導体受光素子
GB2416982.3A GB2634410A (en) 2022-05-13 2023-01-19 Semiconductor light-receiving element
CN202380040000.1A CN119183613A (zh) 2022-05-13 2023-01-19 半导体受光元件
DE112023002255.0T DE112023002255T5 (de) 2022-05-13 2023-01-19 Halbleiter-lichtempfangselement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2022079384A JP2023167864A (ja) 2022-05-13 2022-05-13 半導体受光素子

Publications (2)

Publication Number Publication Date
JP2023167864A true JP2023167864A (ja) 2023-11-24
JP2023167864A5 JP2023167864A5 (https=) 2025-05-15

Family

ID=88729936

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022079384A Pending JP2023167864A (ja) 2022-05-13 2022-05-13 半導体受光素子

Country Status (6)

Country Link
US (1) US20250287721A1 (https=)
JP (1) JP2023167864A (https=)
CN (1) CN119183613A (https=)
DE (1) DE112023002255T5 (https=)
GB (1) GB2634410A (https=)
WO (1) WO2023218698A1 (https=)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001177142A (ja) * 1999-12-16 2001-06-29 Hamamatsu Photonics Kk 受光素子
JP2009206499A (ja) * 2008-02-01 2009-09-10 Sumitomo Electric Ind Ltd 受光素子、受光素子アレイおよびそれらの製造方法
JP2010056147A (ja) * 2008-08-26 2010-03-11 Hamamatsu Photonics Kk 半導体受光素子
US20120043584A1 (en) * 2010-08-23 2012-02-23 Joshi Abhay M Low-noise large-area photoreceivers with low capacitance photodiodes
JP2012060077A (ja) * 2010-09-13 2012-03-22 Hamamatsu Photonics Kk 半導体受光素子及び半導体受光素子の製造方法
JP2014110380A (ja) * 2012-12-04 2014-06-12 Sumitomo Electric Ind Ltd アレイ型受光素子、及びアレイ型受光素子を製造する方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5434847B2 (ja) * 2010-08-17 2014-03-05 住友電装株式会社 端子金具

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001177142A (ja) * 1999-12-16 2001-06-29 Hamamatsu Photonics Kk 受光素子
JP2009206499A (ja) * 2008-02-01 2009-09-10 Sumitomo Electric Ind Ltd 受光素子、受光素子アレイおよびそれらの製造方法
JP2010056147A (ja) * 2008-08-26 2010-03-11 Hamamatsu Photonics Kk 半導体受光素子
US20120043584A1 (en) * 2010-08-23 2012-02-23 Joshi Abhay M Low-noise large-area photoreceivers with low capacitance photodiodes
JP2012060077A (ja) * 2010-09-13 2012-03-22 Hamamatsu Photonics Kk 半導体受光素子及び半導体受光素子の製造方法
JP2014110380A (ja) * 2012-12-04 2014-06-12 Sumitomo Electric Ind Ltd アレイ型受光素子、及びアレイ型受光素子を製造する方法

Also Published As

Publication number Publication date
WO2023218698A1 (ja) 2023-11-16
GB2634410A (en) 2025-04-09
GB202416982D0 (en) 2025-01-01
DE112023002255T5 (de) 2025-02-27
CN119183613A (zh) 2024-12-24
US20250287721A1 (en) 2025-09-11

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