DE112023002255T5 - Halbleiter-lichtempfangselement - Google Patents

Halbleiter-lichtempfangselement Download PDF

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Publication number
DE112023002255T5
DE112023002255T5 DE112023002255.0T DE112023002255T DE112023002255T5 DE 112023002255 T5 DE112023002255 T5 DE 112023002255T5 DE 112023002255 T DE112023002255 T DE 112023002255T DE 112023002255 T5 DE112023002255 T5 DE 112023002255T5
Authority
DE
Germany
Prior art keywords
semiconductor layer
light receiving
semiconductor
receiving element
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112023002255.0T
Other languages
German (de)
English (en)
Inventor
Keiki TAGUCHI
Hajime Ishihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Publication of DE112023002255T5 publication Critical patent/DE112023002255T5/de
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/241—Electrodes for devices having potential barriers comprising ring electrodes

Landscapes

  • Light Receiving Elements (AREA)
DE112023002255.0T 2022-05-13 2023-01-19 Halbleiter-lichtempfangselement Pending DE112023002255T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022079384A JP2023167864A (ja) 2022-05-13 2022-05-13 半導体受光素子
JP2022-079384 2022-05-13
PCT/JP2023/001523 WO2023218698A1 (ja) 2022-05-13 2023-01-19 半導体受光素子

Publications (1)

Publication Number Publication Date
DE112023002255T5 true DE112023002255T5 (de) 2025-02-27

Family

ID=88729936

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112023002255.0T Pending DE112023002255T5 (de) 2022-05-13 2023-01-19 Halbleiter-lichtempfangselement

Country Status (6)

Country Link
US (1) US20250287721A1 (https=)
JP (1) JP2023167864A (https=)
CN (1) CN119183613A (https=)
DE (1) DE112023002255T5 (https=)
GB (1) GB2634410A (https=)
WO (1) WO2023218698A1 (https=)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001177142A (ja) 1999-12-16 2001-06-29 Hamamatsu Photonics Kk 受光素子

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4662188B2 (ja) * 2008-02-01 2011-03-30 住友電気工業株式会社 受光素子、受光素子アレイおよびそれらの製造方法
JP5139923B2 (ja) * 2008-08-26 2013-02-06 浜松ホトニクス株式会社 半導体受光素子
JP5434847B2 (ja) * 2010-08-17 2014-03-05 住友電装株式会社 端子金具
US8598673B2 (en) * 2010-08-23 2013-12-03 Discovery Semiconductors, Inc. Low-noise large-area photoreceivers with low capacitance photodiodes
JP5612407B2 (ja) * 2010-09-13 2014-10-22 浜松ホトニクス株式会社 半導体受光素子及び半導体受光素子の製造方法
JP2014110380A (ja) * 2012-12-04 2014-06-12 Sumitomo Electric Ind Ltd アレイ型受光素子、及びアレイ型受光素子を製造する方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001177142A (ja) 1999-12-16 2001-06-29 Hamamatsu Photonics Kk 受光素子

Also Published As

Publication number Publication date
WO2023218698A1 (ja) 2023-11-16
GB2634410A (en) 2025-04-09
GB202416982D0 (en) 2025-01-01
JP2023167864A (ja) 2023-11-24
CN119183613A (zh) 2024-12-24
US20250287721A1 (en) 2025-09-11

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