JP2023162087A - 鋳造法で酸化ガリウム単結晶を成長させる方法及び酸化ガリウム単結晶を含む半導体デバイス - Google Patents
鋳造法で酸化ガリウム単結晶を成長させる方法及び酸化ガリウム単結晶を含む半導体デバイス Download PDFInfo
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- 229910001195 gallium oxide Inorganic materials 0.000 title claims abstract description 189
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- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- 239000001569 carbon dioxide Substances 0.000 claims description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
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- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
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- 241001354791 Baliga Species 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/06—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added
Abstract
Description
Claims (10)
- 鋳造法で酸化ガリウム単結晶を成長させる方法であって、前記方法は、
固体酸化ガリウムを完全に溶融するまで加熱し、酸化ガリウムの融点まで降温させ、且つ溶融物状態のままで30分間以上保温するステップ1)と、
ステップ1)で得られた前記酸化ガリウム溶融物を固体酸化ガリウム単結晶が得られるまで勾配で降温させるステップ2)とを含み、前記勾配で降温させることは、ステップ1)で得られた前記酸化ガリウム溶融物を第1勾配で第1温度まで降温させ、次に第2勾配で室温まで降温させ続け、酸化ガリウム単結晶を得ることであり、前記第1勾配と第2勾配は等しくても等しくなくてもよく、
前記ステップ1)では、固体酸化ガリウムを第1温度まで加熱してから、成長雰囲気中に体積分率2%以上の酸素が存在し、前記成長雰囲気は不活性ガスを含むことを特徴とする鋳造法で酸化ガリウム単結晶を成長させる方法。 - 前記方法は単結晶シードを使用しないことを特徴とする請求項1に記載の方法。
- 前記第1勾配の降温速度は10℃/時間以上であることを特徴とする請求項1に記載の方法。
- 前記第2勾配の降温速度は第1勾配の降温速度より速いことを特徴とする請求項1に記載の方法。
- 前記第2勾配の降温速度は20℃/時間以上であることを特徴とする請求項1に記載の方法。
- 前記ステップ1)では、加熱して第1温度に達する前、又は第1温度に達した時に、成長雰囲気中の酸素の体積分率が2%以上に達するように酸素を導入することを特徴とする請求項1に記載の方法。
- 前記ステップ2)では、第1勾配で第1温度まで降温させ続ける時、成長雰囲気中の酸素を不活性ガスで置換することを特徴とする請求項1に記載の方法。
- 前記不活性ガスはアルゴン、窒素、二酸化炭素のうちの1つ以上から選択されることを特徴とする請求項1に記載の方法。
- 前記第1温度は1500℃~1700℃であることを特徴とする請求項1に記載の方法。
- 半導体デバイスであって、前記半導体デバイスは、請求項1~9のいずれか一項に記載の方法に従って製造された酸化ガリウム単結晶を含むことを特徴とする半導体デバイス。
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JP4630986B2 (ja) * | 2003-02-24 | 2011-02-09 | 学校法人早稲田大学 | β−Ga2O3系単結晶成長方法 |
EP1974076A2 (en) * | 2006-01-20 | 2008-10-01 | BP Corporation North America Inc. | Methods and apparatuses for manufacturing geometric multicrystalline cast silicon and geometric multicrystalline cast silicon bodies for photovoltaics |
JP2009274883A (ja) * | 2008-05-12 | 2009-11-26 | Nippon Light Metal Co Ltd | 半絶縁性酸化ガリウム単結晶の製造方法 |
CN104372408B (zh) * | 2014-12-15 | 2017-03-22 | 山东大学 | 常压下提拉法生长大尺寸氧化镓单晶的方法 |
EP3042986A1 (en) * | 2015-01-09 | 2016-07-13 | Forschungsverbund Berlin e.V. | Method for growing beta phase of gallium oxide (ß-Ga2O3) single crystals from the melt contained within a metal crucible by controlling the partial pressure of oxygen. |
JP6422159B2 (ja) * | 2015-02-25 | 2018-11-14 | 国立研究開発法人物質・材料研究機構 | α−Ga2O3単結晶、α−Ga2O3の製造方法、および、それを用いた半導体素子 |
JP6726910B2 (ja) * | 2016-04-21 | 2020-07-22 | 国立大学法人信州大学 | 酸化ガリウム結晶の製造装置および酸化ガリウム結晶の製造方法 |
JP6631406B2 (ja) * | 2016-05-20 | 2020-01-15 | 株式会社Sumco | シリコン単結晶の製造方法 |
CN110914483B (zh) * | 2017-06-29 | 2022-06-07 | 胜高股份有限公司 | 单晶硅的制造方法 |
CN107541776A (zh) * | 2017-08-14 | 2018-01-05 | 同济大学 | 一种大尺寸氧化镓单晶的生长设备及方法 |
CN109056062A (zh) * | 2018-08-03 | 2018-12-21 | 湖南红太阳光电科技有限公司 | 一种铸造单晶硅的制备方法 |
JP6800468B2 (ja) * | 2018-10-11 | 2020-12-16 | 国立大学法人信州大学 | 酸化ガリウム結晶の製造装置及び酸化ガリウム結晶の製造方法並びにこれらに用いる酸化ガリウム結晶育成用のるつぼ |
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CN215440759U (zh) * | 2021-07-14 | 2022-01-07 | 同济大学 | 一种坩埚下降法生长氧化镓体单晶的生长装置 |
CN113774484B (zh) * | 2021-09-13 | 2023-05-02 | 杭州镓仁半导体有限公司 | 氧化镓晶体生长方法及生长氧化镓晶体的组合坩埚 |
CN114108083A (zh) * | 2021-10-22 | 2022-03-01 | 浙江大学杭州国际科创中心 | 一种拼接坩埚及氧化镓晶体生长方法 |
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