JP2023111073A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2023111073A5 JP2023111073A5 JP2022012710A JP2022012710A JP2023111073A5 JP 2023111073 A5 JP2023111073 A5 JP 2023111073A5 JP 2022012710 A JP2022012710 A JP 2022012710A JP 2022012710 A JP2022012710 A JP 2022012710A JP 2023111073 A5 JP2023111073 A5 JP 2023111073A5
- Authority
- JP
- Japan
- Prior art keywords
- piezoelectric element
- element array
- array substrate
- manufacturing
- piezoelectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims 42
- 238000004519 manufacturing process Methods 0.000 claims 16
- 238000000034 method Methods 0.000 claims 16
- 238000010438 heat treatment Methods 0.000 claims 5
- 239000000463 material Substances 0.000 claims 5
- 230000001678 irradiating effect Effects 0.000 claims 4
- 230000010287 polarization Effects 0.000 claims 3
- 230000005684 electric field Effects 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022012710A JP2023111073A (ja) | 2022-01-31 | 2022-01-31 | 圧電素子アレイ基板の製造方法、圧電素子アレイ基板及び分極装置 |
| CN202310062628.3A CN116528654A (zh) | 2022-01-31 | 2023-01-18 | 制造压电元件阵列板的方法、压电元件阵列板和极化装置 |
| US18/157,319 US20230241646A1 (en) | 2022-01-31 | 2023-01-20 | Method of manufacturing piezoelectric element array board, piezoelectric element array board, and poling apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022012710A JP2023111073A (ja) | 2022-01-31 | 2022-01-31 | 圧電素子アレイ基板の製造方法、圧電素子アレイ基板及び分極装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2023111073A JP2023111073A (ja) | 2023-08-10 |
| JP2023111073A5 true JP2023111073A5 (https=) | 2024-12-13 |
Family
ID=87400012
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022012710A Pending JP2023111073A (ja) | 2022-01-31 | 2022-01-31 | 圧電素子アレイ基板の製造方法、圧電素子アレイ基板及び分極装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20230241646A1 (https=) |
| JP (1) | JP2023111073A (https=) |
| CN (1) | CN116528654A (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2026030233A1 (en) * | 2024-07-29 | 2026-02-05 | Qualcomm Incorporated | Flexible acoustic sensor systems and fabrication thereof |
| CN121057488B (zh) * | 2025-07-28 | 2026-03-27 | 合肥领航微系统集成有限公司 | 一种基于tft晶体管的超声波传感器及其制备工艺 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5254504A (en) * | 1989-04-13 | 1993-10-19 | Trustees Of The University Of Pennsylvania | Method of manufacturing ferroelectric MOSFET sensors |
| JP2009179649A (ja) * | 2008-01-29 | 2009-08-13 | Konica Minolta Medical & Graphic Inc | 有機高分子材料、有機複合材料、有機圧電材料、その形成方法及び超音波探触子 |
| JP2009300941A (ja) * | 2008-06-17 | 2009-12-24 | Fdk Corp | 磁気光学空間光変調器の製造方法 |
| JP5919630B2 (ja) * | 2010-07-30 | 2016-05-18 | 株式会社リコー | 薄膜形成装置、薄膜形成方法、圧電素子の形成方法、及び液滴吐出ヘッドの製造方法 |
| JP2012049254A (ja) * | 2010-08-25 | 2012-03-08 | Ricoh Co Ltd | 製造装置、製造方法、液体吐出ヘッドおよびインクジェットプリンタ |
| JP6221270B2 (ja) * | 2013-03-11 | 2017-11-01 | 株式会社リコー | 電気−機械変換素子の製造装置、電気−機械変換素子の製造方法 |
| US20140355387A1 (en) * | 2013-06-03 | 2014-12-04 | Qualcomm Incorporated | Ultrasonic receiver with coated piezoelectric layer |
| CN105765750B (zh) * | 2013-11-21 | 2018-07-20 | 3M创新有限公司 | 多层压电聚合物膜装置和方法 |
-
2022
- 2022-01-31 JP JP2022012710A patent/JP2023111073A/ja active Pending
-
2023
- 2023-01-18 CN CN202310062628.3A patent/CN116528654A/zh active Pending
- 2023-01-20 US US18/157,319 patent/US20230241646A1/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3255942B2 (ja) | 逆スタガ薄膜トランジスタの作製方法 | |
| KR100260063B1 (ko) | 절연 게이트 박막 트랜지스터 제조 방법 | |
| US7611932B2 (en) | Method of manufacturing a thin film transistor | |
| JP2814319B2 (ja) | 液晶表示装置及びその製造方法 | |
| JPS59208783A (ja) | 薄膜トランジスタ | |
| JP2023111073A5 (https=) | ||
| JP2008171871A5 (https=) | ||
| WO2016127610A1 (zh) | 阵列基板及其制作方法和显示装置 | |
| US20180047830A1 (en) | Low temperature polycrystalline silicon thin film transistor and manufacturing thereof | |
| US20100176392A1 (en) | Thin film transistor and method of manufacturing the same | |
| JP2001217424A (ja) | 薄膜トランジスタおよびそれを用いた液晶表示装置 | |
| TW201944134A (zh) | 主動元件基板及其製法 | |
| WO2019000508A1 (zh) | 薄膜晶体管阵列基板及其制备方法、显示装置 | |
| WO2019014966A1 (zh) | 多晶硅薄膜的制备方法、薄膜晶体管阵列基板的制备方法 | |
| JPH11243150A5 (https=) | ||
| JP2722890B2 (ja) | 薄膜トランジスタおよびその製造方法 | |
| JP2023111073A (ja) | 圧電素子アレイ基板の製造方法、圧電素子アレイ基板及び分極装置 | |
| JPH03100516A (ja) | 液晶表示装置の製造方法 | |
| TW400653B (en) | Thin film transistor, LCD having thin film transistors, and method for making TFT array board | |
| CN109192783A (zh) | 薄膜晶体管及其制作方法 | |
| JP3430335B2 (ja) | 半導体装置の作製方法 | |
| JPH08172195A (ja) | 薄膜トランジスタ | |
| JPH0384963A (ja) | 薄膜トランジスタ | |
| JP2004153255A5 (https=) | ||
| JP2002110542A (ja) | Si系半導体薄膜の製造方法、薄膜トランジスタ |