JP2023086063A - 太陽電池及び光起電力モジュール - Google Patents
太陽電池及び光起電力モジュール Download PDFInfo
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- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
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- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
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- 238000006388 chemical passivation reaction Methods 0.000 description 1
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Abstract
Description
本発明の実施形態によって提供された太陽電池の技術考案において、ドープされた導電層は、間隔を置いて配置された複数の第1高濃度ドープされた領域を有し、第1高濃度ドープされた領域におけるドーピング濃度は、ドープされた導電層における第1高濃度ドープされた領域以外のドーピング濃度より大きく、複数の電極が間隔を置いて配置され、少なくとも2つの第1高濃度ドープされた領域が同じ電極と接触し、このように、ドープされた導電層は、第1高濃度ドープされた領域と、第1高濃度ドープされた領域以外の領域と分割し、すなわち、第1高濃度ドープされた領域のドーピング濃度およびドーピング深さを適当に設置することができ、且つ第1高濃度ドープされた領域以外のドープされた導電層のドーピング濃度および厚さに影響を与えなく、ドープされた導電層のシート抵抗およびドープされた導電層の光吸収を低減することに有利であり、太陽電池の光電変換効率を向上させることができる。ドープされた導電層は、間隔を置いて配置された複数の第1高濃度ドープされた領域を有し、第1高濃度ドープされた領域のドーピングイオン濃度は、ドープされた導電層における第1高濃度ドープされた領域以外のドーピングイオン濃度より大きく、第1高濃度ドープされた領域の多数キャリアの数は、第1高濃度ドープされた領域以外の多数キャリアより多く、電流の伝送能力を増加させ、それにより太陽電池の直列抵抗を減少し、光電変換効率を向上させることに有利である。少なくとも2つの第1高濃度ドープされた領域が同じ電極と接触し、高いドーピング濃度の第1高濃度ドープされた領域と電極との間に良好なオーミック接触が形成され、高いドーピング濃度の第1高濃度ドープされた領域と電極との間の接触抵抗は、第1高濃度ドープされた領域以外のドープされた導電層と電極との間の接触抵抗より低く、電流の伝導効果はより良く、光電変換効率を向上させることに有利である。
Claims (17)
- 太陽電池であって、
基板と、
前記基板の表面上に位置されたトンネル誘電体層およびドープされた導電層であり、前記トンネリング誘電体層は、前記ドープされた導電層と前記基板との間に位置され、前記ドープされた導電層はドーピング元素を有し、前記ドーピング元素のタイプはN型またはP型であり、前記ドープされた導電層は、間隔を置いて配置された複数の第1高濃度ドープされた領域を有し、前記第1高濃度ドープされた領域は第1方向に沿って延在し、前記第1高濃度ドープされた領域におけるドーピング濃度は、前記ドープされた導電層における前記第1高濃度ドープされた領域以外のドーピング濃度より大きいことと、
前記ドープされた導電層の基板から離れた表面に位置された不動態化層と、
間隔を置いて配置された複数の電極であり、前記電極が第2方向に沿って延在し、前記電極が前記不動態化層を貫通して前記ドープされた導電層と接触し、且つ少なくとも2つの前記第1高濃度ドープされた領域が同じ前記電極と接触することとを含むことを特徴とする太陽電池。 - 前記基板の表面と垂直になる方向において、前記第1高濃度ドープされた領域の深さは、前記第1高濃度ドープされた領域以外の前記ドープされた導電層の厚さ以下であることを特徴とする請求項1に記載の太陽電池。
- 前記第1高濃度ドープされた領域の深さと前記ドープされた導電層の厚さとの比は、80%~100%の範囲であることを特徴とする請求項2に記載の太陽電池。
- 前記ドープされた導電層の厚さは40nm~150nmの範囲であることを特徴とする請求項1又は3に記載の太陽電池。
- 前記基板は第2高濃度ドープされた領域を有し、前記第2高濃度ドープされた領域におけるドーピング濃度は、前記基板における前記第2高濃度ドープされた領域以外のドーピング濃度より大きく、前記第1高濃度ドープされた領域と前記第2高濃度ドープされた領域とは整列し、且つドーピング元素のタイプが同じであることを特徴とする請求項1に記載の太陽電池。
- 前記第2高濃度ドープされた領域のドーピング濃度は、前記第1高濃度ドープされた領域のドーピング濃度以下であることを特徴とする請求項5に記載の太陽電池。
- 前記第1高濃度ドープされた領域のドーピング濃度は、2E+20cm-3~1E+22cm-3であることを特徴とする請求項1又は6に記載の太陽電池。
- 前記基板の表面と垂直になる方向において、前記第2高濃度ドープされた領域の深さは0.001μm~1μmの範囲であることを特徴とする請求項5に記載の太陽電池。
- 前記トンネル誘電体層は、前記トンネル誘電体層の厚さを貫通する第3高濃度ドープされた領域を有し、前記第3高濃度ドープされた領域は前記第1高濃度ドープされた領域および前記第2高濃度ドープされた領域とそれぞれに接触し、且つ前記第1高濃度ドープされた領域、前記第2高濃度ドープされた領域および前記第3高濃度ドープされた領域は整列して、且つドーピング元素のタイプが同じであることを特徴とする請求項5に記載の太陽電池。
- 複数の前記第1高濃度ドープされた領域の配置方向に沿って、前記第1高濃度ドープされた領域の幅は、前記第2高濃度ドープされた領域の幅より小さく、前記第1高濃度ドープされた領域の幅は、前記第3高濃度ドープされた領域の幅以下であることを特徴とする請求項9に記載の太陽電池。
- 前記第1高濃度ドープされた領域の総表面積と前記ドープされた導電層の表面積との比は、1%~20%の範囲であることを特徴とする請求項1に記載の太陽電池。
- 複数の前記第1高濃度ドープされた領域の配置方向に沿って、前記第1高濃度ドープされた領域の幅は20μm~100μmであることを特徴とする請求項1に記載の太陽電池。
- 複数の前記第1高濃度ドープされた領域の配置方向に沿って、隣接する前記第1高濃度ドープされた領域の間の間隔は、0.8mm~4mmの範囲であることを特徴とする請求項1に記載の太陽電池。
- 前記ドープされた導電層の材料は、多結晶シリコン、アモルファスシリコン、または微結晶シリコンのうちの少なくとも1つを含むことを特徴とする請求項1に記載の太陽電池。
- 前記基板は、互いに対向して配置された第1表面と第2表面を有し、前記トンネル誘電体層と前記ドープされた導電層は、前記基板の第1表面側および/または第2表面側に位置されることを特徴とする請求項1に記載の太陽電池。
- 前記基板におけるドーピング元素のタイプは、前記ドープされた導電層におけるドーピング元素のタイプと同じであることを特徴とする請求項1~15のいずれかの1項に記載の太陽電池。
- 光起電モジュールであって、
請求項1~16のいずれかの1項に記載の太陽電池を接続することによって形成された電池ストリングと、
前記電池ストリングの表面を覆うために使用されるカプセル化フィルムと、
前記カプセル化フィルムの前記電池ストリングから離れた表面を覆うために使用されるカバープレートとを含むことを特徴とする光起電モジュール。
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