JP2023038054A - シリコンウェーハの洗浄方法および製造方法、並びに洗浄液中の過酸化水素濃度評価方法および過酸化水素濃度管理方法 - Google Patents

シリコンウェーハの洗浄方法および製造方法、並びに洗浄液中の過酸化水素濃度評価方法および過酸化水素濃度管理方法 Download PDF

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JP2023038054A
JP2023038054A JP2021144950A JP2021144950A JP2023038054A JP 2023038054 A JP2023038054 A JP 2023038054A JP 2021144950 A JP2021144950 A JP 2021144950A JP 2021144950 A JP2021144950 A JP 2021144950A JP 2023038054 A JP2023038054 A JP 2023038054A
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Prior art keywords
cleaning
concentration
silicon wafer
roughening
hydrogen peroxide
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Japanese (ja)
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JP7571691B2 (ja
Inventor
康太 藤井
Kota Fujii
達夫 阿部
Tatsuo Abe
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Shin Etsu Handotai Co Ltd
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Shin Etsu Handotai Co Ltd
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Priority to JP2021144950A priority Critical patent/JP7571691B2/ja
Priority claimed from JP2021144950A external-priority patent/JP7571691B2/ja
Priority to KR1020247006740A priority patent/KR20240051142A/ko
Priority to PCT/JP2022/028175 priority patent/WO2023032497A1/ja
Priority to CN202280059667.1A priority patent/CN117897798A/zh
Priority to TW111127475A priority patent/TW202312266A/zh
Publication of JP2023038054A publication Critical patent/JP2023038054A/ja
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Publication of JP7571691B2 publication Critical patent/JP7571691B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Weting (AREA)
JP2021144950A 2021-09-06 2021-09-06 シリコンウェーハの洗浄方法および製造方法、並びに洗浄液中の過酸化水素濃度評価方法および過酸化水素濃度管理方法 Active JP7571691B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2021144950A JP7571691B2 (ja) 2021-09-06 シリコンウェーハの洗浄方法および製造方法、並びに洗浄液中の過酸化水素濃度評価方法および過酸化水素濃度管理方法
KR1020247006740A KR20240051142A (ko) 2021-09-06 2022-07-20 실리콘 웨이퍼의 세정방법 및 제조방법, 그리고 세정액 중의 과산화수소농도 평가방법 및 과산화수소농도 관리방법
PCT/JP2022/028175 WO2023032497A1 (ja) 2021-09-06 2022-07-20 シリコンウェーハの洗浄方法および製造方法、並びに洗浄液中の過酸化水素濃度評価方法および過酸化水素濃度管理方法
CN202280059667.1A CN117897798A (zh) 2021-09-06 2022-07-20 硅晶圆的清洗方法及制造方法、清洗液中的过氧化氢浓度的评估方法及管理方法
TW111127475A TW202312266A (zh) 2021-09-06 2022-07-22 矽晶圓的洗淨方法及製造方法、以及洗淨液中的過氧化氫濃度評估方法及過氧化氫濃度管理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021144950A JP7571691B2 (ja) 2021-09-06 シリコンウェーハの洗浄方法および製造方法、並びに洗浄液中の過酸化水素濃度評価方法および過酸化水素濃度管理方法

Publications (2)

Publication Number Publication Date
JP2023038054A true JP2023038054A (ja) 2023-03-16
JP7571691B2 JP7571691B2 (ja) 2024-10-23

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TW202312266A (zh) 2023-03-16
WO2023032497A1 (ja) 2023-03-09
CN117897798A (zh) 2024-04-16
KR20240051142A (ko) 2024-04-19

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