JP2023038054A - シリコンウェーハの洗浄方法および製造方法、並びに洗浄液中の過酸化水素濃度評価方法および過酸化水素濃度管理方法 - Google Patents

シリコンウェーハの洗浄方法および製造方法、並びに洗浄液中の過酸化水素濃度評価方法および過酸化水素濃度管理方法 Download PDF

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Publication number
JP2023038054A
JP2023038054A JP2021144950A JP2021144950A JP2023038054A JP 2023038054 A JP2023038054 A JP 2023038054A JP 2021144950 A JP2021144950 A JP 2021144950A JP 2021144950 A JP2021144950 A JP 2021144950A JP 2023038054 A JP2023038054 A JP 2023038054A
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JP
Japan
Prior art keywords
cleaning
concentration
silicon wafer
roughening
hydrogen peroxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2021144950A
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English (en)
Japanese (ja)
Inventor
康太 藤井
Kota Fujii
達夫 阿部
Tatsuo Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to JP2021144950A priority Critical patent/JP2023038054A/ja
Priority to CN202280059667.1A priority patent/CN117897798A/zh
Priority to PCT/JP2022/028175 priority patent/WO2023032497A1/ja
Priority to KR1020247006740A priority patent/KR20240051142A/ko
Priority to TW111127475A priority patent/TW202312266A/zh
Publication of JP2023038054A publication Critical patent/JP2023038054A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Weting (AREA)
JP2021144950A 2021-09-06 2021-09-06 シリコンウェーハの洗浄方法および製造方法、並びに洗浄液中の過酸化水素濃度評価方法および過酸化水素濃度管理方法 Pending JP2023038054A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2021144950A JP2023038054A (ja) 2021-09-06 2021-09-06 シリコンウェーハの洗浄方法および製造方法、並びに洗浄液中の過酸化水素濃度評価方法および過酸化水素濃度管理方法
CN202280059667.1A CN117897798A (zh) 2021-09-06 2022-07-20 硅晶圆的清洗方法及制造方法、清洗液中的过氧化氢浓度的评估方法及管理方法
PCT/JP2022/028175 WO2023032497A1 (ja) 2021-09-06 2022-07-20 シリコンウェーハの洗浄方法および製造方法、並びに洗浄液中の過酸化水素濃度評価方法および過酸化水素濃度管理方法
KR1020247006740A KR20240051142A (ko) 2021-09-06 2022-07-20 실리콘 웨이퍼의 세정방법 및 제조방법, 그리고 세정액 중의 과산화수소농도 평가방법 및 과산화수소농도 관리방법
TW111127475A TW202312266A (zh) 2021-09-06 2022-07-22 矽晶圓的洗淨方法及製造方法、以及洗淨液中的過氧化氫濃度評估方法及過氧化氫濃度管理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021144950A JP2023038054A (ja) 2021-09-06 2021-09-06 シリコンウェーハの洗浄方法および製造方法、並びに洗浄液中の過酸化水素濃度評価方法および過酸化水素濃度管理方法

Publications (1)

Publication Number Publication Date
JP2023038054A true JP2023038054A (ja) 2023-03-16

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JP2021144950A Pending JP2023038054A (ja) 2021-09-06 2021-09-06 シリコンウェーハの洗浄方法および製造方法、並びに洗浄液中の過酸化水素濃度評価方法および過酸化水素濃度管理方法

Country Status (5)

Country Link
JP (1) JP2023038054A (ko)
KR (1) KR20240051142A (ko)
CN (1) CN117897798A (ko)
TW (1) TW202312266A (ko)
WO (1) WO2023032497A1 (ko)

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0766195A (ja) 1993-06-29 1995-03-10 Sumitomo Sitix Corp シリコンウェーハの表面酸化膜形成方法
JPH07240394A (ja) 1994-02-28 1995-09-12 Sumitomo Sitix Corp 半導体ウェーハの表面洗浄方法
JPH0817775A (ja) * 1994-06-28 1996-01-19 Matsushita Electron Corp 半導体装置の洗浄方法
JPH10183185A (ja) * 1996-12-24 1998-07-14 Hitachi Ltd 洗浄液、その配合決定方法ならびに製造方法、洗浄方法、および、半導体基板の製造方法
US5800626A (en) 1997-02-18 1998-09-01 International Business Machines Corporation Control of gas content in process liquids for improved megasonic cleaning of semiconductor wafers and microelectronics substrates
JP3039483B2 (ja) 1997-10-16 2000-05-08 日本電気株式会社 半導体基板の処理薬液及び半導体基板の薬液処理方法
JP3216125B2 (ja) * 1999-01-12 2001-10-09 日本電気株式会社 薬液処理方法および薬液処理装置
JP3201601B2 (ja) * 1999-01-13 2001-08-27 日本電気株式会社 半導体基板の洗浄方法
JP2003194732A (ja) * 2001-12-27 2003-07-09 Shin Etsu Handotai Co Ltd Ｓｏｉウエーハの評価方法
JP4694782B2 (ja) * 2002-12-02 2011-06-08 財団法人国際科学振興財団 半導体装置、その製造方法、及び、半導体表面の処理方法
JP2008194638A (ja) * 2007-02-14 2008-08-28 Schott Lithotec Usa Corp マスク及びマスクブランク用の新規な洗浄方法
CN102405276A (zh) 2009-04-08 2012-04-04 太阳索尼克斯公司 从基板去除污染物质的方法和装置
JP5671793B2 (ja) 2009-10-08 2015-02-18 株式会社Sumco 仕上研磨を施したシリコンウェーハの洗浄方法
JP2012182201A (ja) * 2011-02-28 2012-09-20 Shin Etsu Chem Co Ltd 半導体ウェーハの製造方法
JP6206173B2 (ja) * 2013-12-26 2017-10-04 信越半導体株式会社 半導体ウェーハの洗浄方法

Also Published As

Publication number Publication date
CN117897798A (zh) 2024-04-16
TW202312266A (zh) 2023-03-16
WO2023032497A1 (ja) 2023-03-09
KR20240051142A (ko) 2024-04-19

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