JP2023000660A - 発光装置 - Google Patents
発光装置 Download PDFInfo
- Publication number
- JP2023000660A JP2023000660A JP2021101611A JP2021101611A JP2023000660A JP 2023000660 A JP2023000660 A JP 2023000660A JP 2021101611 A JP2021101611 A JP 2021101611A JP 2021101611 A JP2021101611 A JP 2021101611A JP 2023000660 A JP2023000660 A JP 2023000660A
- Authority
- JP
- Japan
- Prior art keywords
- light
- light emitting
- emitting device
- emitted
- emitting element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 claims abstract description 62
- 238000006243 chemical reaction Methods 0.000 claims abstract description 51
- 239000000758 substrate Substances 0.000 claims abstract description 46
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 13
- 239000000919 ceramic Substances 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 7
- 238000000149 argon plasma sintering Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 3
- 230000000052 comparative effect Effects 0.000 description 30
- 238000012986 modification Methods 0.000 description 27
- 230000004048 modification Effects 0.000 description 27
- 238000009826 distribution Methods 0.000 description 26
- 238000010586 diagram Methods 0.000 description 23
- 239000010410 layer Substances 0.000 description 23
- 239000004065 semiconductor Substances 0.000 description 23
- 230000002093 peripheral effect Effects 0.000 description 17
- 230000004907 flux Effects 0.000 description 14
- 239000000463 material Substances 0.000 description 12
- 229920005989 resin Polymers 0.000 description 12
- 239000011347 resin Substances 0.000 description 12
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 9
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 9
- 239000012790 adhesive layer Substances 0.000 description 8
- 229920002050 silicone resin Polymers 0.000 description 8
- 230000003746 surface roughness Effects 0.000 description 7
- 230000007423 decrease Effects 0.000 description 5
- 238000012795 verification Methods 0.000 description 5
- 229910010413 TiO 2 Inorganic materials 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000008030 elimination Effects 0.000 description 3
- 238000003379 elimination reaction Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 230000004313 glare Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021101611A JP2023000660A (ja) | 2021-06-18 | 2021-06-18 | 発光装置 |
PCT/JP2022/022775 WO2022264850A1 (ja) | 2021-06-18 | 2022-06-06 | 発光装置 |
CN202280041661.1A CN117461152A (zh) | 2021-06-18 | 2022-06-06 | 发光装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021101611A JP2023000660A (ja) | 2021-06-18 | 2021-06-18 | 発光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2023000660A true JP2023000660A (ja) | 2023-01-04 |
JP2023000660A5 JP2023000660A5 (zh) | 2024-06-24 |
Family
ID=84526392
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021101611A Pending JP2023000660A (ja) | 2021-06-18 | 2021-06-18 | 発光装置 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2023000660A (zh) |
CN (1) | CN117461152A (zh) |
WO (1) | WO2022264850A1 (zh) |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9024340B2 (en) * | 2007-11-29 | 2015-05-05 | Nichia Corporation | Light emitting apparatus and method for producing the same |
JP5397944B2 (ja) * | 2009-11-11 | 2014-01-22 | 日東電工株式会社 | 蛍光体含有複合シート |
JP2013197530A (ja) * | 2012-03-22 | 2013-09-30 | Sharp Corp | 光源、発光装置、バックライト用光源、表示装置、および光源の製造方法 |
JP7111939B2 (ja) * | 2017-04-28 | 2022-08-03 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
JP7233301B2 (ja) * | 2019-05-29 | 2023-03-06 | スタンレー電気株式会社 | 半導体発光装置 |
JP7282620B2 (ja) * | 2019-07-04 | 2023-05-29 | シャープ福山レーザー株式会社 | 画像表示素子 |
CN112967980B (zh) * | 2020-08-13 | 2021-12-24 | 重庆康佳光电技术研究院有限公司 | 芯片转移组件及其制作方法、芯片转移方法 |
-
2021
- 2021-06-18 JP JP2021101611A patent/JP2023000660A/ja active Pending
-
2022
- 2022-06-06 CN CN202280041661.1A patent/CN117461152A/zh active Pending
- 2022-06-06 WO PCT/JP2022/022775 patent/WO2022264850A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
CN117461152A (zh) | 2024-01-26 |
WO2022264850A1 (ja) | 2022-12-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20240614 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20240614 |