JP2022541418A - オキシハロゲン化物前駆体 - Google Patents
オキシハロゲン化物前駆体 Download PDFInfo
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- JP2022541418A JP2022541418A JP2022501223A JP2022501223A JP2022541418A JP 2022541418 A JP2022541418 A JP 2022541418A JP 2022501223 A JP2022501223 A JP 2022501223A JP 2022501223 A JP2022501223 A JP 2022501223A JP 2022541418 A JP2022541418 A JP 2022541418A
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- molybdenum
- tungsten
- moyxz
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- 239000002243 precursor Substances 0.000 title abstract description 4
- 150000001875 compounds Chemical class 0.000 claims abstract description 44
- 238000000034 method Methods 0.000 claims abstract description 26
- ASLHVQCNFUOEEN-UHFFFAOYSA-N dioxomolybdenum;dihydrochloride Chemical compound Cl.Cl.O=[Mo]=O ASLHVQCNFUOEEN-UHFFFAOYSA-N 0.000 claims abstract description 18
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 15
- 239000011733 molybdenum Substances 0.000 claims abstract description 15
- 239000000203 mixture Substances 0.000 claims abstract description 14
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 13
- 239000010937 tungsten Substances 0.000 claims abstract description 13
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims abstract description 6
- 125000001309 chloro group Chemical group Cl* 0.000 claims description 19
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 claims description 16
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims description 14
- 239000013078 crystal Substances 0.000 claims description 14
- 235000011164 potassium chloride Nutrition 0.000 claims description 7
- 239000001103 potassium chloride Substances 0.000 claims description 7
- 238000001144 powder X-ray diffraction data Methods 0.000 claims description 7
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 4
- 125000001246 bromo group Chemical group Br* 0.000 claims description 4
- 125000001153 fluoro group Chemical group F* 0.000 claims description 4
- 125000002346 iodo group Chemical group I* 0.000 claims description 4
- 229910052700 potassium Inorganic materials 0.000 claims description 4
- 239000011591 potassium Substances 0.000 claims description 4
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052744 lithium Inorganic materials 0.000 claims description 3
- 239000011777 magnesium Substances 0.000 claims description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- 229910015686 MoOCl4 Inorganic materials 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052788 barium Inorganic materials 0.000 claims description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052790 beryllium Inorganic materials 0.000 claims description 2
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052791 calcium Inorganic materials 0.000 claims description 2
- 239000011575 calcium Substances 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- SFPKXFFNQYDGAH-UHFFFAOYSA-N oxomolybdenum;tetrahydrochloride Chemical compound Cl.Cl.Cl.Cl.[Mo]=O SFPKXFFNQYDGAH-UHFFFAOYSA-N 0.000 claims description 2
- 229910052706 scandium Inorganic materials 0.000 claims description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims description 2
- 229910052708 sodium Inorganic materials 0.000 claims description 2
- 239000011734 sodium Substances 0.000 claims description 2
- 229910052712 strontium Inorganic materials 0.000 claims description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 claims description 2
- 238000001816 cooling Methods 0.000 claims 1
- 230000001747 exhibiting effect Effects 0.000 claims 1
- 229910052723 transition metal Inorganic materials 0.000 claims 1
- 150000003624 transition metals Chemical class 0.000 claims 1
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 abstract description 8
- 230000005496 eutectics Effects 0.000 abstract description 7
- 238000000151 deposition Methods 0.000 abstract description 5
- 239000007787 solid Substances 0.000 abstract description 4
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 abstract description 4
- 239000000155 melt Substances 0.000 abstract description 3
- 239000003513 alkali Substances 0.000 abstract description 2
- -1 alkaline earth metal salts Chemical class 0.000 abstract description 2
- 238000004377 microelectronic Methods 0.000 abstract description 2
- 239000000376 reactant Substances 0.000 abstract description 2
- 238000000634 powder X-ray diffraction Methods 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- 229910001508 alkali metal halide Inorganic materials 0.000 description 4
- 150000008045 alkali metal halides Chemical class 0.000 description 4
- 229910001615 alkaline earth metal halide Inorganic materials 0.000 description 4
- 239000003153 chemical reaction reagent Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 238000000859 sublimation Methods 0.000 description 4
- 230000008022 sublimation Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000002411 thermogravimetry Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000003708 ampul Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000000374 eutectic mixture Substances 0.000 description 2
- 150000004820 halides Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000012429 reaction media Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 238000002447 crystallographic data Methods 0.000 description 1
- 238000013480 data collection Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000113 differential scanning calorimetry Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000000260 fractional sublimation Methods 0.000 description 1
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- GICWIDZXWJGTCI-UHFFFAOYSA-I molybdenum pentachloride Chemical compound Cl[Mo](Cl)(Cl)(Cl)Cl GICWIDZXWJGTCI-UHFFFAOYSA-I 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004467 single crystal X-ray diffraction Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B11/00—Oxides or oxyacids of halogens; Salts thereof
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G39/00—Compounds of molybdenum
- C01G39/04—Halides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G39/00—Compounds of molybdenum
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G41/00—Compounds of tungsten
-
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- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G41/00—Compounds of tungsten
- C01G41/04—Halides
-
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
- C23C16/10—Deposition of chromium only
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
- C23C16/14—Deposition of only one other metal element
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- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
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- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
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Abstract
Description
の化合物を、式A-X(式中、Aは、周期表の第1族元素、第2族元素、遷移金属、及び主族元素から選択される)の少なくとも1つの化合物と、約200°~約900℃の温度で接触させることを含む、方法を提供する。
a=13.552(5)Å α=90°
b=5.456(2)Å β=90°
c=5.508(2)Å γ=90°である。
Mo--Cl 2.278(2)Å
Mo--O 1.706(5)~2.239(5)Å
Cl--Mo--Cl 151.78(7)Å
O--Mo--O 79.08~102.90Å
塩化リチウム及び塩化カリウムの混合物(44/56重量)を、ステンレス鋼アンプル中でMO3と合わせ、減圧下(20mTorr)で排気した。アンプルを管状炉内で475℃に加熱した。得られたMoO2Cl2蒸気を、丸底フラスコを備えたショートパス管(short-path tube)を介して回収した。FTIR及びSTA分析は、MoO2Cl2の合成を支持した。
表1.4(記載した方法を使用して合成したMoO2Cl2に関するICP-MSデータ。データは百万分率(ppm)で報告した。)
識別コード NB00657
実験式 Cl2MoO2
式量 198.84
温度 100.0K
波長 0.71073Å
結晶系 斜方晶系
空間群 Cmc21
単位格子寸法 a=13.552(5)Å α=90°である。
b=5.456(2)Å β=90°である。
c=5.508(2)Å γ=90°である。
体積 407.2(3)Å3
Z 4
密度(計算値) 3.243Mg/m3
吸光係数 4.342mm-1
F(000) 368
結晶サイズ 0.27x0.22x0.2mm3
データ収集のためのθ範囲 3.006~28.284°.
指数範囲 -17<=h<=17、-7<=k<=5、-7<=l<=7
収集された反射 1579
独立反射 523[R(int)=0.0274]
θ完全性=25.500° 100.0%
吸収補正 等価物から半経験的
最大及び最小透過率 0.2627及び0.1831
精密化法 F2でのフルマトリックス最小二乗法
データ/拘束/パラメータ 523/1/28
F2での適合度 1.144
最終的なRインデックス[I>2sigma(I)] R1=0.0216、wR2=0.0540
Rインデックス(すべてのデータ) R1=0.0234、wR2=0.0556
絶対構造パラメータ 0.12(5)
減衰係数 n/a
最大微分ピーク及びホール 1.383及び-0.853e.Å-3
________________________________________
Mo(1)-Cl(1)#1 2.2783(17)
Mo(1)-Cl(1) 2.2783(17)
Mo(1)-O(1) 1.715(5)
Mo(1)-O(1)#2 2.234(6)
Mo(1)-O(2) 1.706(5)
Mo(1)-O(2)#3 2.239(5)
Cl(1)#1-Mo(1)-Cl(1) 151.78(7)
O(1)#2-Mo(1)-Cl(1) 79.41(4)
O(1)-Mo(1)-Cl(1)#1 98.91(5)
O(1)-Mo(1)-Cl(1) 98.91(5)
O(1)#2-Mo(1)-Cl(1)#1 79.41(4)
O(1)-Mo(1)-O(1)#2 88.36(11)
O(1)#2-Mo(1)-O(2)#3 79.1(3)
O(1)-Mo(1)-O(2)#3 167.4(3)
O(2)-Mo(1)-Cl(1)#1 98.54(5)
O(2)#3-Mo(1)-Cl(1) 78.92(4)
O(2)#3-Mo(1)-Cl(1)#1 78.92(4)
O(2)-Mo(1)-Cl(1) 98.54(5)
O(2)-Mo(1)-O(1) 103.0(4)
O(2)-Mo(1)-O(1)#2 168.6(3)
O(2)-Mo(1)-O(2)#3 89.57(6)
Mo(1)-O(1)-Mo(1)#4 149.9(4)
Mo(1)-O(2)-Mo(1)#5 173.8(4)
________________________________________
同等の原子を生成するために使用される対称変換:
#1-x+1,y,z #2-x+1,-y+1,z+1/2 #3-x+1,-y,z+1/2
#4-x+1,-y+1,z-1/2 #5-x+1,-y,z-1/2
Claims (20)
- 結晶形態の、式MOyXzを有する化合物であって、Mが、モリブデン及びタングステンから選択され、Xが、クロロ、フルオロ、ブロモ、及びヨードから選択され、yが、1又は2であり、zが、2又は4である、化合物。
- Mがモリブデンである、請求項1に記載の化合物。
- Mがタングステンである、請求項1に記載の化合物。
- Mがモリブデンであり、Xがクロロである、請求項1に記載の化合物。
- Mがタングステンであり、Xがクロロである、請求項1に記載の化合物。
- 結晶形態の式MoO2Cl2を有し、図1に示すX線結晶構造を有する、化合物。
- 斜方晶系の結晶系を有し、単位格子の寸法が約
a=13.552(5)Å α=90°
b=5.456(2)Å β=90°
c=5.58(2)Å γ=90
である、請求項6に記載の化合物。 - 12.94、23.64、26.10、39.50、及び/又は40.28±0.04度の2θに1つ又は複数のピークを有する粉末XRDパターンを示す、請求項6に記載の化合物。
- 図5に示す粉末XRDパターンを有する、請求項6に記載の化合物。
- 結晶形態の式WO2Cl2を有する、化合物。
- Aが、リチウム、ナトリウム、及びカリウムから選択される、請求項11に記載の方法。
- Xがクロロである、請求項11に記載の方法。
- Aが、マグネシウム、カルシウム、ストロンチウム、バリウム、ベリリウム、スカンジウム、チタン、バナジウム、及びクロムから選択される、請求項11に記載の方法。
- 式A-Xの化合物が、塩化リチウム及び塩化カリウムの混合物を含む、請求項11に記載の方法。
- 式MOyXzの化合物を蒸気として回収し、前記蒸気を冷却し、それによって式MOyXzの化合物の結晶形態を形成することをさらに含む、請求項11に記載の方法。
- 式MOyXzの化合物がMoO2Cl2である、請求項11に記載の方法。
- 式MOyXzの化合物がMoOCl4である、請求項11に記載の方法。
- 式MOyXzの化合物がWO2Cl2である、請求項11に記載の方法。
- 式MOyXzの化合物がWOCl4である、請求項11に記載の方法。
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PCT/US2020/041229 WO2021007339A1 (en) | 2019-07-09 | 2020-07-08 | Oxyhalide precursors |
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Non-Patent Citations (4)
Title |
---|
ATOVMYAN L. O. ET AL., JOURNAL OF STRUCTURAL CHEMISTRY, vol. 9, JPN7023000434, November 1969 (1969-11-01), pages 985 - 986, ISSN: 0004985315 * |
JEYAKUMAR KANDASAMY ET AL., JOURNAL OF CHEMICAL SCIENCES, vol. 121, JPN6023004047, 2009, pages 111 - 123, ISSN: 0004985316 * |
POPOV B. N. ET AL., JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. Volume 120, Number 10, JPN7023000435, 1973, pages 1346 - 1350, ISSN: 0004985317 * |
VOLKOVICHA VLADIMIR ET AL., JOURNAL OF NUCLEAR MATERIALS, vol. 323, JPN7023000436, 2003, pages 93 - 100, ISSN: 0004985318 * |
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US20240140819A1 (en) | 2024-05-02 |
TW202142494A (zh) | 2021-11-16 |
TW202108509A (zh) | 2021-03-01 |
EP3997099A4 (en) | 2023-08-23 |
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