JP2022528846A - 負極集電体、負極シート及び電気化学装置 - Google Patents
負極集電体、負極シート及び電気化学装置 Download PDFInfo
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- JP2022528846A JP2022528846A JP2021557695A JP2021557695A JP2022528846A JP 2022528846 A JP2022528846 A JP 2022528846A JP 2021557695 A JP2021557695 A JP 2021557695A JP 2021557695 A JP2021557695 A JP 2021557695A JP 2022528846 A JP2022528846 A JP 2022528846A
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- negative electrode
- copper
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- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910008365 Li-Sn Inorganic materials 0.000 description 1
- 229910008410 Li-Sn-O Inorganic materials 0.000 description 1
- 229910015015 LiAsF 6 Inorganic materials 0.000 description 1
- 229910013063 LiBF 4 Inorganic materials 0.000 description 1
- 229910013188 LiBOB Inorganic materials 0.000 description 1
- 229910013684 LiClO 4 Inorganic materials 0.000 description 1
- 229910012851 LiCoO 2 Inorganic materials 0.000 description 1
- 229910010941 LiFSI Inorganic materials 0.000 description 1
- 229910013275 LiMPO Inorganic materials 0.000 description 1
- 229910015645 LiMn Inorganic materials 0.000 description 1
- 229910015643 LiMn 2 O 4 Inorganic materials 0.000 description 1
- 229910013290 LiNiO 2 Inorganic materials 0.000 description 1
- 229910012258 LiPO Inorganic materials 0.000 description 1
- 229910001228 Li[Ni1/3Co1/3Mn1/3]O2 (NCM 111) Inorganic materials 0.000 description 1
- 229910000572 Lithium Nickel Cobalt Manganese Oxide (NCM) Inorganic materials 0.000 description 1
- 229910006759 Li—Sn Inorganic materials 0.000 description 1
- 229910006763 Li—Sn—O Inorganic materials 0.000 description 1
- JLVVSXFLKOJNIY-UHFFFAOYSA-N Magnesium ion Chemical compound [Mg+2] JLVVSXFLKOJNIY-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- FKNQFGJONOIPTF-UHFFFAOYSA-N Sodium cation Chemical compound [Na+] FKNQFGJONOIPTF-UHFFFAOYSA-N 0.000 description 1
- 239000002174 Styrene-butadiene Substances 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- FBDMTTNVIIVBKI-UHFFFAOYSA-N [O-2].[Mn+2].[Co+2].[Ni+2].[Li+] Chemical compound [O-2].[Mn+2].[Co+2].[Ni+2].[Li+] FBDMTTNVIIVBKI-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- DPXJVFZANSGRMM-UHFFFAOYSA-N acetic acid;2,3,4,5,6-pentahydroxyhexanal;sodium Chemical compound [Na].CC(O)=O.OCC(O)C(O)C(O)C(O)C=O DPXJVFZANSGRMM-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- NDPGDHBNXZOBJS-UHFFFAOYSA-N aluminum lithium cobalt(2+) nickel(2+) oxygen(2-) Chemical compound [Li+].[O--].[O--].[O--].[O--].[Al+3].[Co++].[Ni++] NDPGDHBNXZOBJS-UHFFFAOYSA-N 0.000 description 1
- 150000001413 amino acids Chemical class 0.000 description 1
- 125000006615 aromatic heterocyclic group Chemical group 0.000 description 1
- 229910021383 artificial graphite Inorganic materials 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 239000001768 carboxy methyl cellulose Substances 0.000 description 1
- 235000010948 carboxy methyl cellulose Nutrition 0.000 description 1
- 229920003123 carboxymethyl cellulose sodium Polymers 0.000 description 1
- 239000008112 carboxymethyl-cellulose Substances 0.000 description 1
- 229940105329 carboxymethylcellulose Drugs 0.000 description 1
- 229940063834 carboxymethylcellulose sodium Drugs 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 229920006037 cross link polymer Polymers 0.000 description 1
- IEJIGPNLZYLLBP-UHFFFAOYSA-N dimethyl carbonate Chemical compound COC(=O)OC IEJIGPNLZYLLBP-UHFFFAOYSA-N 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000003487 electrochemical reaction Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 238000007765 extrusion coating Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000004676 glycans Chemical class 0.000 description 1
- 238000007756 gravure coating Methods 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 229910021385 hard carbon Inorganic materials 0.000 description 1
- 238000010952 in-situ formation Methods 0.000 description 1
- QZUPTXGVPYNUIT-UHFFFAOYSA-N isophthalamide Chemical compound NC(=O)C1=CC=CC(C(N)=O)=C1 QZUPTXGVPYNUIT-UHFFFAOYSA-N 0.000 description 1
- 229910003473 lithium bis(trifluoromethanesulfonyl)imide Inorganic materials 0.000 description 1
- 229910000625 lithium cobalt oxide Inorganic materials 0.000 description 1
- 229910002102 lithium manganese oxide Inorganic materials 0.000 description 1
- FRMOHNDAXZZWQI-UHFFFAOYSA-N lithium manganese(2+) nickel(2+) oxygen(2-) Chemical compound [O-2].[Mn+2].[Ni+2].[Li+] FRMOHNDAXZZWQI-UHFFFAOYSA-N 0.000 description 1
- MHCFAGZWMAWTNR-UHFFFAOYSA-M lithium perchlorate Chemical compound [Li+].[O-]Cl(=O)(=O)=O MHCFAGZWMAWTNR-UHFFFAOYSA-M 0.000 description 1
- 229910001486 lithium perchlorate Inorganic materials 0.000 description 1
- 229910001496 lithium tetrafluoroborate Inorganic materials 0.000 description 1
- VDVLPSWVDYJFRW-UHFFFAOYSA-N lithium;bis(fluorosulfonyl)azanide Chemical compound [Li+].FS(=O)(=O)[N-]S(F)(=O)=O VDVLPSWVDYJFRW-UHFFFAOYSA-N 0.000 description 1
- IGILRSKEFZLPKG-UHFFFAOYSA-M lithium;difluorophosphinate Chemical compound [Li+].[O-]P(F)(F)=O IGILRSKEFZLPKG-UHFFFAOYSA-M 0.000 description 1
- BFZPBUKRYWOWDV-UHFFFAOYSA-N lithium;oxido(oxo)cobalt Chemical compound [Li+].[O-][Co]=O BFZPBUKRYWOWDV-UHFFFAOYSA-N 0.000 description 1
- VLXXBCXTUVRROQ-UHFFFAOYSA-N lithium;oxido-oxo-(oxomanganiooxy)manganese Chemical compound [Li+].[O-][Mn](=O)O[Mn]=O VLXXBCXTUVRROQ-UHFFFAOYSA-N 0.000 description 1
- URIIGZKXFBNRAU-UHFFFAOYSA-N lithium;oxonickel Chemical compound [Li].[Ni]=O URIIGZKXFBNRAU-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910001425 magnesium ion Inorganic materials 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000001883 metal evaporation Methods 0.000 description 1
- 229910021382 natural graphite Inorganic materials 0.000 description 1
- 239000011255 nonaqueous electrolyte Substances 0.000 description 1
- 239000010450 olivine Substances 0.000 description 1
- 229910052609 olivine Inorganic materials 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920013636 polyphenyl ether polymer Polymers 0.000 description 1
- 229920001282 polysaccharide Polymers 0.000 description 1
- 239000005017 polysaccharide Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002153 silicon-carbon composite material Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- OIIWPAYIXDCDNL-UHFFFAOYSA-M sodium 3-(trimethylsilyl)propionate Chemical compound [Na+].C[Si](C)(C)CCC([O-])=O OIIWPAYIXDCDNL-UHFFFAOYSA-M 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 229910021384 soft carbon Inorganic materials 0.000 description 1
- 239000007784 solid electrolyte Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 230000003319 supportive effect Effects 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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Abstract
Description
負極集電体
d=Kγ/(Bcosθ)
式において、Kは、シェラー定数であり、K=0.89とし、Bは、回折ピークの半値幅であり、算出過程においてそれをラジアン(rad)に変換する必要があり、θは、回折角であり、γは、X線の波長であって、0.154056nmである。
負極シート
電気化学装置
実施例
製造方法
負極集電体の製造
負極シートの製造
正極集電体の製造
従来の正極シートの製造
電解液の調製
リチウムイオン二次電池の製造
試験部分
1.負極集電体試験
(1)銅系導電層における銅系結晶粒径dの測定
(2)有機支持層のヤング率Eの測定
(3)負極集電体の破断伸び率の測定
2.電池性能試験
(1)サイクル性能試験
リチウムイオン二次電池の1C/1Cで1000回サイクル後の容量保持率(%)=1000回目サイクルの放電容量/1回目サイクルの放電容量×100%
(2)倍率性能試験
25℃下で、リチウムイオン二次電池を1Cの倍率で4.2Vになるまで定電流充電し、さらに電流が0.05C以下になるまで定電圧充電し、さらに4Cの倍率で3.0Vになるまで定電流放電し、測定によって、リチウムイオン二次電池の4C倍率の放電容量が得られた。
リチウムイオン二次電池の4C倍率の容量保持率(%)=4C倍率の放電容量/1C倍率の放電容量×100%
試験結果
1.電気化学装置の重量エネルギー密度の改善での本願の負極集電体の作用
2.本願の負極集電体及び電気化学装置の電気化学的性能に対する保護層の作用
3.負極集電体に対する銅系導電層の銅系結晶粒径d、及び厚さD1と銅系結晶粒径dとの比の影響
Claims (10)
- 負極集電体であって、
有機支持層と、前記有機支持層の少なくとも一つの表面に設けられた銅系導電層と、を含み、
前記銅系導電層における銅系結晶粒径dは、10nm~500nmである、
負極集電体。 - 前記銅系導電層の厚さD1と前記銅系結晶粒径dとは、1≦D1/d≦300を満たし、好ましくは2≦D1/d≦100であり、より好ましくは3≦D1/d≦50であり、及び/又は、
前記銅系導電層における銅系結晶粒径dは、30nm~300nmであり、好ましくは50nm~150nmである、
請求項1に記載の負極集電体。 - 前記有機支持層のヤング率Eは、E≧2GPaであり、好ましくは52GPa≦E≦20GPaである、
請求項1に記載の負極集電体。 - 前記負極集電体の破断伸び率は、3%以上である、
請求項1に記載の負極集電体。 - 前記銅系導電層の厚さD1は、30nm≦D1≦3μmであり、好ましくは300nm≦D1≦2μmであり、好ましくは500nm≦D1≦1.5μmであり、より好ましくは600nm≦D1≦1.2μmであり、及び/又は、
前記有機支持層の厚さD2は、1μm≦D2≦30μmであり、好ましくは1μm≦D2≦15μmであり、好ましくは1μm≦D2≦10μmであり、好ましくは1μm≦D2≦8μmであり、好ましくは2μm≦D2≦8μmであり、より好ましくは2μm≦D2≦6μmである、
請求項1に記載の負極集電体。 - 前記銅系導電層は、銅及び銅合金のうちの一種類又は複数種類を含み、
前記銅合金は、銅元素及び添加元素を含み、前記添加元素は、好ましくは、チタン、バナジウム、ニッケル、クロム、鉄、コバルト、マンガン、亜鉛、ジルコニウム、モリブデン、ニオブ、タングステン、銀、パラジウム及びカドミウムのうちの一種類又は複数種類であり、前記銅合金における銅元素の質量百分率含有量は、好ましくは80wt%以上であり、
好ましくは、前記銅系導電層は、気相蒸着層又は電気メッキ層である、
請求項1に記載の負極集電体。 - 前記有機支持層は、高分子材料及び高分子系複合材料のうちの一種類又は複数種類を含み、
前記高分子材料は、ポリアミド、ポリイミド、ポリエチレンテレフタレート、ポリブチレンテレフタレート、ポリエチレンナフタレート、ポリカーボネート、ポリエチレン、ポリプロピレン、エチレン-プロピレンゴム、アクリロニトリル-ブタジエン-スチレン共重合体、ポリビニルアルコール、ポリスチレン、ポリ塩化ビニル、ポリフッ化ビニリデン、ポリテトラフルオロエチレン、ポリスチレンスルホン酸ナトリウム、ポリアセチレン、シリコーンゴム、ポリオキシメチレン、ポリフェニレンエーテル、ポリフェニレンサルファイド、ポリエチレングリコール、ポリ窒化硫黄類、ポリフェニル、ポリピロール、ポリアニリン、ポリチオフェン、ポリピリジン、セルロース、デンプン、タンパク質、エポキシ樹脂、フェノール樹脂、これらの誘導体、それらの架橋物及びそれらの共重合体のうちの一種類又は複数種類であり、
前記高分子系複合材料は、前記高分子材料と、金属材料及び無機非金属材料のうちの一種類又は複数種類を含む添加剤と、を含む、
請求項1に記載の負極集電体。 - 前記銅系導電層の自身の厚さ方向において対向する2つの面の少なくとも一つに設けられた保護層をさらに備え、
前記保護層は、金属、金属酸化物及び導電性炭素のうちの一種類又は複数種類を含み、好ましくは、ニッケル、クロム、ニッケル系合金、銅系合金、酸化アルミニウム、酸化コバルト、酸化クロム、酸化ニッケル、グラファイト、超電導カーボン、アセチレンブラック、カーボンブラック、ケッチェンブラック、カーボンドット、カーボンナノチューブ、グラフェン及びカーボンナノファイバーの一種類又は複数種類を含み、
好ましくは、前記保護層の厚さD3は、1nm≦D3≦200nmであり、前記保護層の厚さD3と前記銅系導電層の厚さD1とは、D3≦0.1D1を満たす、
請求項1に記載の負極集電体。 - 負極シートであって、
負極集電体と、前記負極集電体に設けられた負極活物質層と、を備え、
前記負極集電体は、請求項1乃至8のいずれか一項に記載の負極集電体である、
負極シート。 - 電気化学装置であって、
正極シート、負極シート及び電解質を含み、
前記負極シートは、請求項9に記載の負極シートである、
電気化学装置。
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