JP2022519321A5 - - Google Patents

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Publication number
JP2022519321A5
JP2022519321A5 JP2021546221A JP2021546221A JP2022519321A5 JP 2022519321 A5 JP2022519321 A5 JP 2022519321A5 JP 2021546221 A JP2021546221 A JP 2021546221A JP 2021546221 A JP2021546221 A JP 2021546221A JP 2022519321 A5 JP2022519321 A5 JP 2022519321A5
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JP
Japan
Prior art keywords
film
processing chamber
approximately
power supply
duty cycle
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JP2021546221A
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English (en)
Japanese (ja)
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JP7641225B2 (ja
JP2022519321A (ja
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Priority claimed from PCT/US2020/017284 external-priority patent/WO2020167611A1/en
Publication of JP2022519321A publication Critical patent/JP2022519321A/ja
Publication of JP2022519321A5 publication Critical patent/JP2022519321A5/ja
Application granted granted Critical
Publication of JP7641225B2 publication Critical patent/JP7641225B2/ja
Active legal-status Critical Current
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JP2021546221A 2019-02-11 2020-02-07 パルス状にしたｒｆプラズマを介した膜形成 Active JP7641225B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962803661P 2019-02-11 2019-02-11
US62/803,661 2019-02-11
PCT/US2020/017284 WO2020167611A1 (en) 2019-02-11 2020-02-07 Film formation via pulsed rf plasma

Publications (3)

Publication Number Publication Date
JP2022519321A JP2022519321A (ja) 2022-03-22
JP2022519321A5 true JP2022519321A5 (https=) 2023-02-15
JP7641225B2 JP7641225B2 (ja) 2025-03-06

Family

ID=71946185

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021546221A Active JP7641225B2 (ja) 2019-02-11 2020-02-07 パルス状にしたｒｆプラズマを介した膜形成

Country Status (7)

Country Link
US (1) US11443919B2 (https=)
JP (1) JP7641225B2 (https=)
KR (2) KR20210116689A (https=)
CN (1) CN113544310B (https=)
SG (1) SG11202108364QA (https=)
TW (2) TW202449206A (https=)
WO (1) WO2020167611A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12062536B2 (en) * 2020-09-08 2024-08-13 Applied Materials, Inc. Amorphous carbon for gap fill
US12300466B2 (en) 2021-11-08 2025-05-13 Tokyo Electron Limited Plasma enhanced film formation method
US12469747B2 (en) 2023-01-04 2025-11-11 Applied Materials, Inc. Selective metal selectivity improvement with RF pulsing
US20240332003A1 (en) * 2023-03-29 2024-10-03 Applied Materials, Inc. Rf pulsing assisted tungsten-containing film deposition
CN120388886A (zh) * 2024-01-29 2025-07-29 浙江创芯集成电路有限公司 半导体结构的形成方法

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US5242530A (en) 1991-08-05 1993-09-07 International Business Machines Corporation Pulsed gas plasma-enhanced chemical vapor deposition of silicon
JP3262899B2 (ja) * 1993-05-21 2002-03-04 キヤノン株式会社 マイクロ波プラズマｃｖｄ法により大面積の機能性堆積膜を連続的に形成する方法及び装置
US5648293A (en) 1993-07-22 1997-07-15 Nec Corporation Method of growing an amorphous silicon film
US6287990B1 (en) * 1998-02-11 2001-09-11 Applied Materials, Inc. CVD plasma assisted low dielectric constant films
JP2000331935A (ja) * 1999-05-20 2000-11-30 Matsushita Electric Ind Co Ltd 半導体薄膜の製造方法と製造装置、及び半導体装置
JP3671966B2 (ja) * 2002-09-20 2005-07-13 日新電機株式会社 薄膜形成装置及び方法
US8110493B1 (en) 2005-12-23 2012-02-07 Novellus Systems, Inc. Pulsed PECVD method for modulating hydrogen content in hard mask
EP1918967B1 (en) 2006-11-02 2013-12-25 Dow Corning Corporation Method of forming a film by deposition from a plasma
CN101235491A (zh) * 2007-01-29 2008-08-06 北京行者多媒体科技有限公司 脉冲式等离子体镀膜方法
TWI350006B (en) 2007-10-05 2011-10-01 Ind Tech Res Inst Plasma enhanced thin film deposition method
KR101436564B1 (ko) 2008-05-07 2014-09-02 한국에이에스엠지니텍 주식회사 비정질 실리콘 박막 형성 방법
US7745346B2 (en) 2008-10-17 2010-06-29 Novellus Systems, Inc. Method for improving process control and film conformality of PECVD film
JP2010103303A (ja) * 2008-10-23 2010-05-06 Toshiba Corp 磁気抵抗素子及びその製造方法
US9260781B2 (en) * 2009-02-18 2016-02-16 Council Of Scientific And Industrial Research Process to deposit diamond like carbon as surface of a shaped object
JP2010205854A (ja) * 2009-03-02 2010-09-16 Fujitsu Semiconductor Ltd 半導体装置の製造方法
WO2012061593A2 (en) * 2010-11-03 2012-05-10 Applied Materials, Inc. Apparatus and methods for deposition of silicon carbide and silicon carbonitride films
JP2012222175A (ja) * 2011-04-11 2012-11-12 Ngk Insulators Ltd プラズマｃｖｄ装置及びアモルファス膜の形成方法
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JP7183187B2 (ja) * 2017-05-16 2022-12-05 エーエスエム アイピー ホールディング ビー．ブイ． 誘電体上の酸化物の選択的ｐｅａｌｄ

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