CN113544310B - 通过脉冲式rf等离子体的膜形成 - Google Patents

通过脉冲式rf等离子体的膜形成 Download PDF

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CN113544310B
CN113544310B CN202080019065.4A CN202080019065A CN113544310B CN 113544310 B CN113544310 B CN 113544310B CN 202080019065 A CN202080019065 A CN 202080019065A CN 113544310 B CN113544310 B CN 113544310B
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film
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substrate
power source
chamber
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CN113544310A (zh
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K·尼塔拉
D·N·凯德拉亚
K·嘉纳基拉曼
Y·杨
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Applied Materials Inc
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Applied Materials Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
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    • H01J37/32082—Radio frequency generated discharge
    • C—CHEMISTRY; METALLURGY
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/515—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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    • H01J37/32431—Constructional details of the reactor
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
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    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
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    • H10P72/0602—Temperature monitoring
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • H—ELECTRICITY
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    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
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    • H10P72/04—Apparatus for manufacture or treatment
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    • H10P72/04—Apparatus for manufacture or treatment
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    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
CN202080019065.4A 2019-02-11 2020-02-07 通过脉冲式rf等离子体的膜形成 Active CN113544310B (zh)

Applications Claiming Priority (3)

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US201962803661P 2019-02-11 2019-02-11
US62/803,661 2019-02-11
PCT/US2020/017284 WO2020167611A1 (en) 2019-02-11 2020-02-07 Film formation via pulsed rf plasma

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CN113544310A CN113544310A (zh) 2021-10-22
CN113544310B true CN113544310B (zh) 2024-05-28

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US (1) US11443919B2 (https=)
JP (1) JP7641225B2 (https=)
KR (2) KR20210116689A (https=)
CN (1) CN113544310B (https=)
SG (1) SG11202108364QA (https=)
TW (2) TW202449206A (https=)
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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12062536B2 (en) * 2020-09-08 2024-08-13 Applied Materials, Inc. Amorphous carbon for gap fill
US12300466B2 (en) 2021-11-08 2025-05-13 Tokyo Electron Limited Plasma enhanced film formation method
US12469747B2 (en) 2023-01-04 2025-11-11 Applied Materials, Inc. Selective metal selectivity improvement with RF pulsing
US20240332003A1 (en) * 2023-03-29 2024-10-03 Applied Materials, Inc. Rf pulsing assisted tungsten-containing film deposition
CN120388886A (zh) * 2024-01-29 2025-07-29 浙江创芯集成电路有限公司 半导体结构的形成方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6287990B1 (en) * 1998-02-11 2001-09-11 Applied Materials, Inc. CVD plasma assisted low dielectric constant films
CN101235491A (zh) * 2007-01-29 2008-08-06 北京行者多媒体科技有限公司 脉冲式等离子体镀膜方法
CN107346745A (zh) * 2016-05-06 2017-11-14 朗姆研究公司 封装方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5242530A (en) 1991-08-05 1993-09-07 International Business Machines Corporation Pulsed gas plasma-enhanced chemical vapor deposition of silicon
JP3262899B2 (ja) * 1993-05-21 2002-03-04 キヤノン株式会社 マイクロ波プラズマｃｖｄ法により大面積の機能性堆積膜を連続的に形成する方法及び装置
US5648293A (en) 1993-07-22 1997-07-15 Nec Corporation Method of growing an amorphous silicon film
JP2000331935A (ja) * 1999-05-20 2000-11-30 Matsushita Electric Ind Co Ltd 半導体薄膜の製造方法と製造装置、及び半導体装置
JP3671966B2 (ja) * 2002-09-20 2005-07-13 日新電機株式会社 薄膜形成装置及び方法
US8110493B1 (en) 2005-12-23 2012-02-07 Novellus Systems, Inc. Pulsed PECVD method for modulating hydrogen content in hard mask
EP1918967B1 (en) 2006-11-02 2013-12-25 Dow Corning Corporation Method of forming a film by deposition from a plasma
TWI350006B (en) 2007-10-05 2011-10-01 Ind Tech Res Inst Plasma enhanced thin film deposition method
KR101436564B1 (ko) 2008-05-07 2014-09-02 한국에이에스엠지니텍 주식회사 비정질 실리콘 박막 형성 방법
US7745346B2 (en) 2008-10-17 2010-06-29 Novellus Systems, Inc. Method for improving process control and film conformality of PECVD film
JP2010103303A (ja) * 2008-10-23 2010-05-06 Toshiba Corp 磁気抵抗素子及びその製造方法
US9260781B2 (en) * 2009-02-18 2016-02-16 Council Of Scientific And Industrial Research Process to deposit diamond like carbon as surface of a shaped object
JP2010205854A (ja) * 2009-03-02 2010-09-16 Fujitsu Semiconductor Ltd 半導体装置の製造方法
WO2012061593A2 (en) * 2010-11-03 2012-05-10 Applied Materials, Inc. Apparatus and methods for deposition of silicon carbide and silicon carbonitride films
JP2012222175A (ja) * 2011-04-11 2012-11-12 Ngk Insulators Ltd プラズマｃｖｄ装置及びアモルファス膜の形成方法
US8592328B2 (en) * 2012-01-20 2013-11-26 Novellus Systems, Inc. Method for depositing a chlorine-free conformal sin film
US9114666B2 (en) 2012-02-22 2015-08-25 Lam Research Corporation Methods and apparatus for controlling plasma in a plasma processing system
US8877617B2 (en) * 2012-09-27 2014-11-04 Sunpower Corporation Methods and structures for forming and protecting thin films on substrates
GB201218697D0 (en) * 2012-10-18 2012-11-28 Spts Technologies Ltd A method of depositing an amorphous silicon film
US9589799B2 (en) * 2013-09-30 2017-03-07 Lam Research Corporation High selectivity and low stress carbon hardmask by pulsed low frequency RF power
US10037884B2 (en) * 2016-08-31 2018-07-31 Lam Research Corporation Selective atomic layer deposition for gapfill using sacrificial underlayer
CN110546302B (zh) * 2017-05-05 2022-05-27 Asm Ip 控股有限公司 用于受控形成含氧薄膜的等离子体增强沉积方法
JP7183187B2 (ja) * 2017-05-16 2022-12-05 エーエスエム アイピー ホールディング ビー．ブイ． 誘電体上の酸化物の選択的ｐｅａｌｄ

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6287990B1 (en) * 1998-02-11 2001-09-11 Applied Materials, Inc. CVD plasma assisted low dielectric constant films
CN101235491A (zh) * 2007-01-29 2008-08-06 北京行者多媒体科技有限公司 脉冲式等离子体镀膜方法
CN107346745A (zh) * 2016-05-06 2017-11-14 朗姆研究公司 封装方法
CN107393809A (zh) * 2016-05-06 2017-11-24 朗姆研究公司 使用pecvd沉积保形和低湿蚀刻速率的封装层的方法

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SG11202108364QA (en) 2021-08-30
US20200258720A1 (en) 2020-08-13
KR20210116689A (ko) 2021-09-27
JP7641225B2 (ja) 2025-03-06
TWI859190B (zh) 2024-10-21
US11443919B2 (en) 2022-09-13
TW202449206A (zh) 2024-12-16
JP2022519321A (ja) 2022-03-22
KR20260036393A (ko) 2026-03-16
WO2020167611A1 (en) 2020-08-20
CN113544310A (zh) 2021-10-22

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