JP2022515736A - 電極としての使用のための階層構造を有する大面積銅ナノフォーム - Google Patents
電極としての使用のための階層構造を有する大面積銅ナノフォーム Download PDFInfo
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- JP2022515736A JP2022515736A JP2021535178A JP2021535178A JP2022515736A JP 2022515736 A JP2022515736 A JP 2022515736A JP 2021535178 A JP2021535178 A JP 2021535178A JP 2021535178 A JP2021535178 A JP 2021535178A JP 2022515736 A JP2022515736 A JP 2022515736A
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- copper
- lithium
- nanoporous
- aluminum
- tin
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- 239000010949 copper Substances 0.000 title claims abstract description 110
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 87
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 73
- 239000008208 nanofoam Substances 0.000 title description 2
- 238000000034 method Methods 0.000 claims abstract description 63
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 35
- 230000008569 process Effects 0.000 claims abstract description 31
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910001416 lithium ion Inorganic materials 0.000 claims abstract description 29
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 claims abstract description 28
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000011149 active material Substances 0.000 claims abstract description 7
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 7
- 239000010439 graphite Substances 0.000 claims abstract description 7
- 238000012856 packing Methods 0.000 claims abstract description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 30
- 239000000956 alloy Substances 0.000 claims description 30
- 239000002243 precursor Substances 0.000 claims description 28
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 21
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 claims description 17
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 239000011888 foil Substances 0.000 claims description 13
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 11
- 239000006260 foam Substances 0.000 claims description 10
- 239000011148 porous material Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 8
- 239000006183 anode active material Substances 0.000 claims description 8
- 239000000843 powder Substances 0.000 claims description 8
- 210000003041 ligament Anatomy 0.000 claims description 7
- 230000001351 cycling effect Effects 0.000 claims description 6
- 238000007599 discharging Methods 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 claims description 4
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 4
- 239000012190 activator Substances 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 230000007797 corrosion Effects 0.000 claims description 4
- 238000005260 corrosion Methods 0.000 claims description 4
- -1 halide salt Chemical class 0.000 claims description 4
- 239000011777 magnesium Substances 0.000 claims description 4
- 239000011572 manganese Substances 0.000 claims description 4
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 4
- 239000010955 niobium Substances 0.000 claims description 4
- 239000011780 sodium chloride Substances 0.000 claims description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 230000006399 behavior Effects 0.000 claims description 3
- 239000000945 filler Substances 0.000 claims description 3
- 229910052744 lithium Inorganic materials 0.000 claims description 3
- 239000011812 mixed powder Substances 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- 229910002651 NO3 Inorganic materials 0.000 claims description 2
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- ZVLDJSZFKQJMKD-UHFFFAOYSA-N [Li].[Si] Chemical compound [Li].[Si] ZVLDJSZFKQJMKD-UHFFFAOYSA-N 0.000 claims description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 2
- 235000019270 ammonium chloride Nutrition 0.000 claims description 2
- BZHNHDOWFCBZNK-UHFFFAOYSA-N antimony lithium Chemical compound [Li].[Sb] BZHNHDOWFCBZNK-UHFFFAOYSA-N 0.000 claims description 2
- 229910021383 artificial graphite Inorganic materials 0.000 claims description 2
- JYPVGDJNZGAXBB-UHFFFAOYSA-N bismuth lithium Chemical compound [Li].[Bi] JYPVGDJNZGAXBB-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- UBEWDCMIDFGDOO-UHFFFAOYSA-N cobalt(2+);cobalt(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[Co+2].[Co+3].[Co+3] UBEWDCMIDFGDOO-UHFFFAOYSA-N 0.000 claims description 2
- PVAKBHJQBIKTDC-UHFFFAOYSA-N gallium lithium Chemical compound [Li].[Ga] PVAKBHJQBIKTDC-UHFFFAOYSA-N 0.000 claims description 2
- 229910021385 hard carbon Inorganic materials 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- LHJOPRPDWDXEIY-UHFFFAOYSA-N indium lithium Chemical compound [Li].[In] LHJOPRPDWDXEIY-UHFFFAOYSA-N 0.000 claims description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 2
- UIDWHMKSOZZDAV-UHFFFAOYSA-N lithium tin Chemical compound [Li].[Sn] UIDWHMKSOZZDAV-UHFFFAOYSA-N 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 229910052748 manganese Inorganic materials 0.000 claims description 2
- 238000002844 melting Methods 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- 239000007769 metal material Substances 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 229910021382 natural graphite Inorganic materials 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 claims description 2
- 229910021384 soft carbon Inorganic materials 0.000 claims description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 239000011889 copper foil Substances 0.000 abstract description 13
- 230000015556 catabolic process Effects 0.000 abstract description 4
- 238000006731 degradation reaction Methods 0.000 abstract description 4
- 238000012360 testing method Methods 0.000 abstract description 4
- 238000005275 alloying Methods 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 15
- 238000000576 coating method Methods 0.000 description 14
- 238000002441 X-ray diffraction Methods 0.000 description 13
- 239000006104 solid solution Substances 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 8
- 238000001878 scanning electron micrograph Methods 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000007772 electroless plating Methods 0.000 description 5
- 239000010405 anode material Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000012691 Cu precursor Substances 0.000 description 3
- 239000003929 acidic solution Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000002105 nanoparticle Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 description 2
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 description 2
- 239000012300 argon atmosphere Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 210000004027 cell Anatomy 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000010411 electrocatalyst Substances 0.000 description 2
- 238000004146 energy storage Methods 0.000 description 2
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000000265 homogenisation Methods 0.000 description 2
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000004663 powder metallurgy Methods 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- 229910013870 LiPF 6 Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229910017917 NH4 Cl Inorganic materials 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- 229910000905 alloy phase Inorganic materials 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- MYWGVEGHKGKUMM-UHFFFAOYSA-N carbonic acid;ethene Chemical compound C=C.C=C.OC(O)=O MYWGVEGHKGKUMM-UHFFFAOYSA-N 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000006258 conductive agent Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000009510 drug design Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- YFKPABFAJKUPTN-UHFFFAOYSA-N germanium lithium Chemical compound [Li].[Ge] YFKPABFAJKUPTN-UHFFFAOYSA-N 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 239000002135 nanosheet Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 210000005155 neural progenitor cell Anatomy 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 238000000550 scanning electron microscopy energy dispersive X-ray spectroscopy Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- BBMHARZCALWXSL-UHFFFAOYSA-M sodium dihydrogenphosphate monohydrate Chemical compound O.[Na+].OP(O)([O-])=O BBMHARZCALWXSL-UHFFFAOYSA-M 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- GZNAASVAJNXPPW-UHFFFAOYSA-M tin(4+) chloride dihydrate Chemical compound O.O.[Cl-].[Sn+4] GZNAASVAJNXPPW-UHFFFAOYSA-M 0.000 description 1
- FWPIDFUJEMBDLS-UHFFFAOYSA-L tin(II) chloride dihydrate Substances O.O.Cl[Sn]Cl FWPIDFUJEMBDLS-UHFFFAOYSA-L 0.000 description 1
Images
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/08—Alloys with open or closed pores
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/64—Carriers or collectors
- H01M4/70—Carriers or collectors characterised by shape or form
- H01M4/80—Porous plates, e.g. sintered carriers
- H01M4/808—Foamed, spongy materials
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
- C22C21/12—Alloys based on aluminium with copper as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C3/00—Removing material from alloys to produce alloys of different constitution separation of the constituents of alloys
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/01—Alloys based on copper with aluminium as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C10/00—Solid state diffusion of only metal elements or silicon into metallic material surfaces
- C23C10/28—Solid state diffusion of only metal elements or silicon into metallic material surfaces using solids, e.g. powders, pastes
- C23C10/34—Embedding in a powder mixture, i.e. pack cementation
- C23C10/36—Embedding in a powder mixture, i.e. pack cementation only one element being diffused
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C10/00—Solid state diffusion of only metal elements or silicon into metallic material surfaces
- C23C10/28—Solid state diffusion of only metal elements or silicon into metallic material surfaces using solids, e.g. powders, pastes
- C23C10/34—Embedding in a powder mixture, i.e. pack cementation
- C23C10/36—Embedding in a powder mixture, i.e. pack cementation only one element being diffused
- C23C10/38—Chromising
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C10/00—Solid state diffusion of only metal elements or silicon into metallic material surfaces
- C23C10/28—Solid state diffusion of only metal elements or silicon into metallic material surfaces using solids, e.g. powders, pastes
- C23C10/34—Embedding in a powder mixture, i.e. pack cementation
- C23C10/36—Embedding in a powder mixture, i.e. pack cementation only one element being diffused
- C23C10/44—Siliconising
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C10/00—Solid state diffusion of only metal elements or silicon into metallic material surfaces
- C23C10/28—Solid state diffusion of only metal elements or silicon into metallic material surfaces using solids, e.g. powders, pastes
- C23C10/34—Embedding in a powder mixture, i.e. pack cementation
- C23C10/36—Embedding in a powder mixture, i.e. pack cementation only one element being diffused
- C23C10/48—Aluminising
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/05—Accumulators with non-aqueous electrolyte
- H01M10/052—Li-accumulators
- H01M10/0525—Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
- H01M4/133—Electrodes based on carbonaceous material, e.g. graphite-intercalation compounds or CFx
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
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Abstract
Description
関連出願の相互参照
本特許出願は、2018年12月18日に出願された米国特許出願第62/781,579号の利益を主張し、本出願で参照される他のすべての参考文献と共に、参照によって援用される。
本発明は、金属電極の分野に関し、具体的に、バッテリを備えるエネルギー装置およびエネルギー貯蔵電池において、高性能な電極としての使用のための階層構造を有する大面積銅ナノフォームを製造する技術に関する。
簡便合成は、銅粉末の代わりに銅箔を用いたパックセメンテーションプロセスに基づく。パックセメンテーション時間およびアルミニウムの量に応じて、階層マイクロポーラスまたはナノポーラス銅が生成され、リチウムイオン電池アノードとして用いるために錫で被覆可能である。ナノ銅フォームアノードのコイン電池試験は、表面積がきわめて大きいため、従来のグラファイトアノードと比較して、4倍高い面積容量(20サイクルまで性能が劣化することなく、平方センチメートルあたり7.4ミリアンペアアワー)を示した。
ナノポーラス金属構造は、固有の3次元構造による顕著な比表面積、低い密度、および効率的な触媒反応など、有益な特性をもたらし得る。そのため、ナノポーラス金属構造は、電解触媒、アクチュエータ、およびエネルギー貯蔵(たとえば、電池および二次電池)など、エネルギー装置の応用で用いられる可能性がある。ナノポーラス金属のさまざまな合成は、化学的脱合金化、金属溶解脱合金化、および酸素プラズマ脱合金化など、異なる方法を用いて生成されてもよい。化学的脱合金化法は、一般に100ナノメートル未満の平均径を有する細孔で構成されるナノポーラス金属を製造するための、最も一般的に用いられる方法である。この場合、化学的脱合金化では、さまざまな酸性溶液または基礎液を用いて、合金から1つ以上の元素(卑金属)が選択的に溶解される。
脱合金化の前に、パックセメンテーション法を用いて、アルミニウム-銅合金前駆体を合成した。図1は、全体的な処理ルートを示す模式図である。第1のステップは、パックセメンテーションプロセスで用いられる粉末の混合を示す。粉末は、活性剤として3重量%NH4Cl粉末(100ミクロン、Alfa Aesar、米国)、被覆金属ソースとして15重量%純アルミニウム粉末(99.8%、+325メッシュ、Alfa Aesar、米国)、およびフィラーとして82重量%Al2O3粉末(60μm、Alfa Aesar、米国)から構成されていた。機械混合(8000-D Mixer Mill, SPEX SamplePrep、米国)を30分間行って、均一に混合された粉末を得た。混合後、次の熱処理ステップのためにステンレス鋼容器を用いてパッキングおよび封止(図1b)を行って、一定のセ氏800℃で15分、30分、3時間、6時間、12時間、または15時間、パックセメンテーション(図1c)を行って、空気管炉における比較のために、異なるアルミニウム銅合金前駆体箔を形成した。パックセメンテーションされたアルミニウム銅合金前駆体箔は以降では、p15m、p30m、p3h、p6h、p12h、およびp15hと呼ばれる。パックセメンテーションプロセスの最後に、封止された容器を水に浸漬した。その後、均質化のために、セ氏500℃で9時間またはセ氏700℃で6時間、アルゴン雰囲気の管炉でさらに熱処理プロセス(図1d)を行った。その後、3重量%HCl溶液でセ氏50℃でアルミニウム銅合金前駆体の脱合金化プロセス(図1e)を行って、アルミニウム銅合金からアルミニウム原子をエッチング除去した。最終的なナノポーラス銅を、無水アルコールで水洗いした。パックセメンテーションされたアルミニウム-銅合金前駆体箔および脱合金化ナノポーラス銅のサンプルの微細構造の特徴を明らかにし、EDSアナライザを組合わせたSEM(JSM7401F、JEOL)を用いて分析した。銅K-アルファ放射(1.5406オングストロームの波長)を有するXRD(リガク Ultima III X線回折装置)も用いて、アルミニウムと銅との間の合金相を判断した。
リチウムイオン電池アノードとして合成されたナノポーラス銅の性能を実証するために、無電解めっきによって、高容量アノード活物質(錫)をナノポーラス銅に被覆した。ナノポーラス銅を、セ氏60℃で1分間錫めっき溶液に浸漬した。錫めっき溶液は、2グラムの塩化スズ(II)二水和物(SnCl2・2H2O)、2グラムのリン酸ナトリウム一水化物(NaH2PO2・2H2O)、10.5グラムのチオ尿素(CS(NH2)2)、および0.84ミリリットルの濃酸塩を含有する200ミリリットルの脱イオン水からなる。その後、錫で被覆されたナノポーラス銅アノードサンプルを、セ氏150℃で1時間、窒素雰囲気の管炉で熱処理した。
11ミリメートルの直径および250ミクロンの厚さの寸法を有する銅ディスクを準備した。CR2032型コイン電池を、錫が被覆されたナノポーラス銅アノード切取り試片を作用電極として、およびリチウム金属箔を対向電極および参照電極の両方のために用いて、乾燥アルゴン雰囲気のグローブボックスにおいて組立てた。電解液は、3:7の体積比のエチレンカーボネート(EC)およびジエチレンカーボネート(DEC)の従来の1.3モルLiPF6溶液であった。セ氏25℃で、3.0ボルト~0.01ボルト(Liイオン/Liに対して)の電圧範囲で、平方センチメートルあたり1ミリアンペアの電流密度で、錫が被覆されたナノポーラス銅アノード切取り試片を含む組立てコイン電池に対して定電流試験を行った。
パックセメンテーション時間を15分~15時間で異ならせて、9.7原子百分率アルミニウム~79.6原子百分率アルミニウムの範囲の組成を有する、異なるアルミニウム-銅合金前駆体箔を得た。ホイル試料の厚さは、パックセメンテーション時間が15時間まで増加するにつれて、255.0プラスマイナス0.5から1139.6プラスマイナス26.6ミクロンに増加した(表S1、図5および図6A~図6F)。
高性能なリチウムイオン電池アノードとしての潜在的な使用について、階層マイクロポーラスまたはナノポーラス銅サンプル(p15h)を、錫被覆のためにアノード集電体および多孔質基板の両方として適用した。十分成長した多孔度を有する階層電極構造は、繰返される充電または放電プロセス中に錫の大きな体積変化を軽減するような、合理的設計であり得る。
簡便な脱合金化法が、銅箔のためのパックセメンテーションアルミニウム被覆処理と組合わせて良好に展開されて、約10~80原子百分率アルミニウムを有する銅-アルミニウム合金前駆体が調製された。セ氏800℃で15時間のパックセメンテーション時間によって、脱合金化されると階層構造化マイクロポーラスまたはナノポーラス銅を生成可能な固溶α-Al相および金属間Al2Cu相の二相が生じた。この場合、固溶α-Al相は、酸性溶液において優先的にエッチング除去可能であり、ミクロ細孔が後に残った。その後、Al2Cu相は、Al2Cuマイクロスケールストラットにおいてナノ細孔を生成可能であった。
Claims (13)
- パックセメンテーションプロセスを用いて、ホイルの形状の前駆体合金を製造することと、
前記前駆体合金を脱合金化することと、
脱合金化された前記前駆体合金を用いて、試料全体にわたってナノスケール銅ストラットおよび細孔を形成することと、
階層マイクロポーラスまたはナノポーラス銅またはフルナノポーラス銅の前記試料を取得することとを備える、方法。 - 前記前駆体合金の前記ホイルは、アルミニウム-銅合金を含み、前記アルミニウムの濃度は、約20原子百分率~約85原子百分率の濃度であり、方法は、
塩酸の脱合金化溶液で前記前駆体合金を処理することを備え、リガメントサイズは約50ナノメートル~約500ナノメートルに変更可能であり、方法はさらに、
異なるアルミニウム-銅相について異なる腐食挙動に起因して、細孔径を約10ナノメートル~約10ミクロンに制御することを備える、請求項1に記載の方法。 - 前駆体合金を形成するときに、パックセメンテーション温度をセ氏約400℃~セ氏約900℃に選択するまたは異ならせることを備える、請求項2に記載の方法。
- 前記脱合金化溶液は、セ氏約20℃~セ氏約100℃の約0.01モル~約20モル塩酸溶液である、請求項2に記載の方法。
- 前記パックセメンテーションプロセスは、1種類以上の金属粉末、充填剤、およびハロゲン化物塩活性剤の混合粉末パックを用いることを含む、請求項1に記載の方法。
- 前記脱合金化プロセスは、標準的な水素電極に関する化学腐食電位差に基づいて、製造された前記前駆体合金に対して行うことが可能であり、
アルミニウムは、マグネシウム(Mg)、シリコン(Si)、クロム(Cr)、ニオブ(Nb)、亜鉛(Zn)、チタン(Ti)、モリブデン(Mo)、錫(Sn)、およびマンガン(Mn)からなる群より選択される材料を含むことが可能な、銅と比較してより高い腐食性を有する他の元素に置換えることが可能である、請求項2に記載の方法。 - 前記ハロゲン化物塩活性剤は、塩化ナトリウム(NaCl)、フッ化ナトリウム(NaF)、および塩化アンモニウム(NH4Cl)からなる群より選択される材料である、請求項5に記載の方法。
- パックセメンテーション温度は、金属前駆体の融解温度より低く設定可能である、請求項7に記載の方法。
- 前記脱合金化溶液は、塩化水素(HCl)、水酸化ナトリウム(NaOH)、硝酸(NaOH)、リン酸(H3PO4)、および過塩素酸(HClO4)からなる群より選択される、請求項2に記載の方法。
- 製造された前記階層マイクロポーラスまたはナノポーラスまたはフルナノポーラス銅(NPC)は、表面積が広く3次元構造が固有であるため、さまざまなエネルギー装置に用いられる、請求項1に記載の方法。
- 請求項1に記載の前記試料を含むリチウムイオン電池アノード集電体であって、前記試料は錫活物質で被覆されて、被覆された前記試料はリチウムイオンと反応し、リチウムイオンを蓄積し、充電および放電サイクリングプロセス中に体積膨張を良好に吸収する、リチウムイオン電池アノード集電体。
- 請求項1に記載の前記試料を含むリチウムイオン電池アノード集電体であって、前記試料は錫活物質で被覆され、
付加的なアノード活物質が前記ナノ銅フォームアノードに充填され、前記物質は、グラファイトベースの材料、金属ベースの材料、または酸化物ベースの材料のうちの少なくとも1つを含む、リチウムイオン電池アノード集電体。 - 前記付加的なアノード活物質は、人造黒鉛、天然黒鉛、軟質炭素、硬質炭素、錫-リチウムベースの合金、シリコン-リチウムベースの合金、インジウム-リチウムベースの合金、アンチモン-リチウムベースの合金、ゲルマニウム-リチウムベースの合金、ビスマス-リチウムベースの合金、ガリウム-リチウムベースの合金、ならびに二酸化スズ(SnO2)、酸化コバルト(Co3O4)、酸化銅(CuO)、酸化ニッケル(NiO)、および酸化鉄(Fe3O4)のうちの少なくとも1つを含む酸化物ベースの材料からなる群より選択される、請求項12に記載のリチウムイオン電池アノード集電体。
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