JP2022169477A - 研磨組成物及び向上した欠陥防止を有する基材を研磨する方法 - Google Patents

研磨組成物及び向上した欠陥防止を有する基材を研磨する方法 Download PDF

Info

Publication number
JP2022169477A
JP2022169477A JP2022072274A JP2022072274A JP2022169477A JP 2022169477 A JP2022169477 A JP 2022169477A JP 2022072274 A JP2022072274 A JP 2022072274A JP 2022072274 A JP2022072274 A JP 2022072274A JP 2022169477 A JP2022169477 A JP 2022169477A
Authority
JP
Japan
Prior art keywords
chemical mechanical
mechanical polishing
group
polishing composition
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022072274A
Other languages
English (en)
Japanese (ja)
Other versions
JP2022169477A5 (enExample
Inventor
イ・グオ
Yi Guo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials Holding Inc
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials CMP Holdings Inc filed Critical Rohm and Haas Electronic Materials CMP Holdings Inc
Publication of JP2022169477A publication Critical patent/JP2022169477A/ja
Publication of JP2022169477A5 publication Critical patent/JP2022169477A5/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02—Phosphorus compounds
    • C07F9/28—Phosphorus compounds with one or more P—C bonds
    • C07F9/54—Quaternary phosphonium compounds
    • C07F9/5456—Arylalkanephosphonium compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Weting (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2022072274A 2021-04-27 2022-04-26 研磨組成物及び向上した欠陥防止を有する基材を研磨する方法 Pending JP2022169477A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17/241,377 US11274230B1 (en) 2021-04-27 2021-04-27 Polishing composition and method of polishing a substrate having enhanced defect inhibition
US17/241,377 2021-04-27

Publications (2)

Publication Number Publication Date
JP2022169477A true JP2022169477A (ja) 2022-11-09
JP2022169477A5 JP2022169477A5 (enExample) 2025-04-21

Family

ID=80683392

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022072274A Pending JP2022169477A (ja) 2021-04-27 2022-04-26 研磨組成物及び向上した欠陥防止を有する基材を研磨する方法

Country Status (4)

Country Link
US (1) US11274230B1 (enExample)
JP (1) JP2022169477A (enExample)
KR (1) KR20220147525A (enExample)
CN (1) CN115247027B (enExample)

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5393469A (en) * 1992-03-20 1995-02-28 Lumigen, Inc. Polymeric phosphonium salts providing enhanced chemiluminescence from 1,2-dioxetanes
JP2000144109A (ja) * 1998-11-10 2000-05-26 Okamoto Machine Tool Works Ltd 化学機械研磨用研磨剤スラリ−
US9129907B2 (en) * 2006-09-08 2015-09-08 Cabot Microelectronics Corporation Onium-containing CMP compositions and methods of use thereof
EP2356192B1 (en) 2008-09-19 2020-01-15 Cabot Microelectronics Corporation Barrier slurry for low-k dielectrics
WO2014175397A1 (ja) * 2013-04-25 2014-10-30 日立化成株式会社 Ｃｍｐ用研磨液及びこれを用いた研磨方法
WO2016006631A1 (ja) * 2014-07-09 2016-01-14 日立化成株式会社 Ｃｍｐ用研磨液及び研磨方法
US9631122B1 (en) * 2015-10-28 2017-04-25 Cabot Microelectronics Corporation Tungsten-processing slurry with cationic surfactant
JP7056672B2 (ja) * 2018-01-18 2022-04-19 昭和電工マテリアルズ株式会社 研磨液、研磨液セット及び研磨方法
US10683439B2 (en) * 2018-03-15 2020-06-16 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing composition and method of polishing a substrate having enhanced defect inhibition
US10604678B1 (en) 2019-02-08 2020-03-31 Rohrn and Haas Electronic Materials CMP Holdings, Inc. Chemical mechanical polishing of tungsten using a method and composition containing quaternary phosphonium compounds
TWI794474B (zh) * 2019-04-15 2023-03-01 日商昭和電工材料股份有限公司 研磨液、研磨液套組及研磨方法

Also Published As

Publication number Publication date
CN115247027B (zh) 2024-03-01
TW202245044A (zh) 2022-11-16
US11274230B1 (en) 2022-03-15
CN115247027A (zh) 2022-10-28
KR20220147525A (ko) 2022-11-03

Similar Documents

Publication Publication Date Title
JP5361306B2 (ja) 化学機械研磨用水系分散体および化学機械研磨方法
TWI508154B (zh) 包含多晶矽及氧化矽與氮化矽之至少一者之基板的研磨方法
JP5861906B2 (ja) 酸化ケイ素除去を増大させるように適合した研磨組成物で基体を化学機械研磨する方法
JP6423214B2 (ja) 低欠陥化学機械研磨組成物
JP7557532B2 (ja) 高い酸化物除去速度を有するシャロートレンチアイソレーション化学的機械平坦化組成物
TWI496878B (zh) 包含多晶矽及氧化矽與氮化矽之至少一者之基板的研磨方法
JP7359554B2 (ja) 欠陥抑制を向上させた研磨組成物及び基板の研磨方法
US12024652B2 (en) Polishing composition and method of polishing a substrate having enhanced defect reduction
US9293339B1 (en) Method of polishing semiconductor substrate
JP2022169477A (ja) 研磨組成物及び向上した欠陥防止を有する基材を研磨する方法
TWI905422B (zh) 具有增強的缺陷抑制的拋光組成物和拋光襯底之方法
JP2025013285A (ja) 化学機械研磨組成物及び研磨パッド溝閉塞の防止方法
TW202521662A (zh) 鉬化學機械拋光化合物及其使用方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250411

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20250411