JP2022168128A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2022168128A JP2022168128A JP2022143070A JP2022143070A JP2022168128A JP 2022168128 A JP2022168128 A JP 2022168128A JP 2022143070 A JP2022143070 A JP 2022143070A JP 2022143070 A JP2022143070 A JP 2022143070A JP 2022168128 A JP2022168128 A JP 2022168128A
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- Prior art keywords
- die pad
- semiconductor device
- lead
- wire
- sealing resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 288
- 229920005989 resin Polymers 0.000 claims abstract description 198
- 239000011347 resin Substances 0.000 claims abstract description 198
- 238000007789 sealing Methods 0.000 claims abstract description 164
- 239000011342 resin composition Substances 0.000 claims abstract description 107
- 239000000463 material Substances 0.000 claims abstract description 90
- 229910000679 solder Inorganic materials 0.000 claims description 18
- 238000004891 communication Methods 0.000 claims description 2
- 230000007257 malfunction Effects 0.000 abstract description 18
- 238000004519 manufacturing process Methods 0.000 description 21
- 239000000203 mixture Substances 0.000 description 21
- 230000008646 thermal stress Effects 0.000 description 21
- 229910052751 metal Inorganic materials 0.000 description 18
- 239000002184 metal Substances 0.000 description 18
- 239000010949 copper Substances 0.000 description 12
- 230000007797 corrosion Effects 0.000 description 10
- 238000005260 corrosion Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 239000010931 gold Substances 0.000 description 9
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000000945 filler Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 235000011962 puddings Nutrition 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 239000007822 coupling agent Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 239000011256 inorganic filler Substances 0.000 description 2
- 229910003475 inorganic filler Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 230000002040 relaxant effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229920005992 thermoplastic resin Polymers 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/562—Protection against mechanical damage
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
- H01L21/4825—Connection or disconnection of other leads to or from flat leads, e.g. wires, bumps, other flat leads
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
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- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
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- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
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- H—ELECTRICITY
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3142—Sealing arrangements between parts, e.g. adhesion promotors
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4334—Auxiliary members in encapsulations
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49503—Lead-frames or other flat leads characterised by the die pad
- H01L23/49513—Lead-frames or other flat leads characterised by the die pad having bonding material between chip and die pad
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49517—Additional leads
- H01L23/4952—Additional leads the additional leads being a bump or a wire
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49548—Cross section geometry
- H01L23/49551—Cross section geometry characterised by bent parts
- H01L23/49555—Cross section geometry characterised by bent parts the bent parts being the outer leads
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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- H01L2224/061—Disposition
- H01L2224/0618—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/06181—On opposite sides of the body
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
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- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/45012—Cross-sectional shape
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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Abstract
【解決手段】 半導体装置は、半導体素子と、リードフレームと、導通部材と、樹脂組成物と、封止樹脂と、を備えており、前記リードフレームは、ダイパッド、および、前記ダイパッドと離間したリードを備えており、前記半導体素子は、前記ダイパッドに搭載されており、前記導通部材には、前記半導体素子と前記ダイパッドとを接合し、かつ、導通させる導電性接合材が含まれており、前記樹脂組成物は、前記導電性接合材と前記ダイパッドとの接合部分を覆うダイパッド側被覆部を含んでおり、前記ダイパッド側被覆部は、前記ダイパッドから前記導電性接合材および前記素子側面を覆って、前記素子主面上に延材する単一の一体部分として構成されている。
【選択図】 図16
Description
Claims (13)
- 第1方向において互いに離間する素子主面および素子裏面と、前記素子主面および前記素子裏面に繋がる素子側面とを有する半導体素子と、
前記半導体素子が搭載されたリードフレームと、
前記リードフレームに接合され、前記半導体素子と前記リードフレームとを導通させる導通部材と、
前記導通部材と前記リードフレームとの接合部分を覆い、かつ、前記素子主面の一部を露出させる樹脂組成物と、
前記リードフレームの一部、前記半導体素子および前記樹脂組成物を覆う封止樹脂と、
を備えており、
前記リードフレームは、ダイパッド、および、前記ダイパッドと離間したリードを備えており、
前記半導体素子は、前記ダイパッドに搭載されており、
前記導通部材には、前記半導体素子と前記ダイパッドとを接合し、かつ、導通させる導電性接合材が含まれており、
前記樹脂組成物は、前記導電性接合材と前記ダイパッドとの接合部分を覆うダイパッド側被覆部を含んでおり、
前記ダイパッド側被覆部は、前記ダイパッドから前記導電性接合材および前記素子側面を覆って、前記素子主面上に延材する単一の一体部分として構成されている、半導体装置。 - 前記ダイパッドは、前記素子主面と同じ方向を向くパッド主面および前記素子裏面と同じ方向を向くパッド裏面を有しており、
前記パッド主面と前記素子裏面とが対向している、
請求項1に記載の半導体装置。 - 前記半導体素子は、前記素子裏面に形成された裏面電極を含んでおり、
前記導電性接合材は、前記裏面電極と前記ダイパッドとを接合し、かつ、導通させ
る、
請求項2に記載の半導体装置。 - 前記導電性接合材は、前記裏面電極に当接する素子当接面、前記ダイパッドに当接するダイパッド当接面、および、前記素子当接面と前記ダイパッド当接面とに繋がる連絡面を有しており、
前記ダイパッド側被覆部は、前記連絡面と前記封止樹脂との間に介在するダイパッド側第1部を含んでいる、
請求項3に記載の半導体装置。 - 前記ダイパッド側被覆部は、前記ダイパッド側第1部に繋がり、かつ、前記パッド主面と前記封止樹脂との間に介在するダイパッド側第2部をさらに含んでいる、
請求項4に記載の半導体装置。 - 前記ダイパッド側被覆部は、前記ダイパッド側第1部に繋がり、かつ、前記素子側面の少なくとも一部と前記封止樹脂との間に介在するダイパッド側第3部をさらに含んでいる、
請求項4または請求項5に記載の半導体装置。 - 前記ダイパッド側被覆部は、前記ダイパッド側第3部に繋がり、かつ、前記素子主面の一部と前記封止樹脂との間に介在するダイパッド側第4部をさらに含んでいる、
請求項6に記載の半導体装置。 - 前記導電性接合材は、はんだである、
請求項3ないし請求項7のいずれか一項に記載の半導体装置。 - 前記パッド裏面は、前記封止樹脂から露出している、
請求項3ないし請求項8のいずれか一項に記載の半導体装置。 - 前記半導体素子は、前記素子主面に形成された主面電極を含んでおり、
前記導通部材には、前記主面電極および前記リードに接合され、前記主面電極と前記リードとを導通させるワイヤが含まれている、
請求項2ないし請求項9のいずれか一項に記載の半導体装置。 - 前記ワイヤは、前記主面電極に接合された第1接合部と前記リードに接合された第2接合部とを含んでいる、
請求項10に記載の半導体装置。 - 前記ワイヤは、前記第1接合部と前記第2接合部とを繋ぐ線状部をさらに含んでおり、
前記線状部は、周方向の全周にわたって前記封止樹脂に接する樹脂当接領域を含んでいる、
請求項11に記載の半導体装置。 - 前記半導体素子は、パワー半導体チップである、
請求項1ないし請求項12のいずれか一項に記載の半導体装置。
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JP2012160581A (ja) * | 2011-02-01 | 2012-08-23 | Nichia Chem Ind Ltd | 発光装置及びその製造方法 |
JP2012174927A (ja) * | 2011-02-22 | 2012-09-10 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP2014179541A (ja) * | 2013-03-15 | 2014-09-25 | Renesas Electronics Corp | 半導体装置およびその製造方法 |
JP2015115383A (ja) * | 2013-12-10 | 2015-06-22 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JP2017092389A (ja) * | 2015-11-16 | 2017-05-25 | シャープ株式会社 | 半導体装置 |
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JP7141453B2 (ja) | 2022-09-22 |
CN112424919B (zh) | 2023-12-22 |
CN112424919A (zh) | 2021-02-26 |
JPWO2020017574A1 (ja) | 2021-06-24 |
JP7411748B2 (ja) | 2024-01-11 |
US20240030159A1 (en) | 2024-01-25 |
JP2024029106A (ja) | 2024-03-05 |
DE112019003664T5 (de) | 2021-04-01 |
US11545446B2 (en) | 2023-01-03 |
CN117936471A (zh) | 2024-04-26 |
US20210305175A1 (en) | 2021-09-30 |
WO2020017574A1 (ja) | 2020-01-23 |
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US20230096699A1 (en) | 2023-03-30 |
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