JP2022163040A - 遠隔プラズマによる酸化へのアルゴン添加 - Google Patents
遠隔プラズマによる酸化へのアルゴン添加 Download PDFInfo
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 title claims abstract description 204
- 229910052786 argon Inorganic materials 0.000 title claims abstract description 102
- 230000003647 oxidation Effects 0.000 title claims abstract description 33
- 238000007254 oxidation reaction Methods 0.000 title claims abstract description 33
- 239000007789 gas Substances 0.000 claims abstract description 133
- 238000000034 method Methods 0.000 claims abstract description 112
- 238000012545 processing Methods 0.000 claims abstract description 106
- 239000000758 substrate Substances 0.000 claims abstract description 80
- 239000002243 precursor Substances 0.000 claims abstract description 71
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 65
- 230000004913 activation Effects 0.000 claims abstract description 43
- 230000008569 process Effects 0.000 claims abstract description 35
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 21
- 229910001882 dioxygen Inorganic materials 0.000 claims description 21
- 239000012190 activator Substances 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 230000007423 decrease Effects 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- 230000003247 decreasing effect Effects 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 abstract description 53
- 239000001301 oxygen Substances 0.000 abstract description 51
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 40
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 27
- 239000001257 hydrogen Substances 0.000 abstract description 26
- 238000001994 activation Methods 0.000 description 31
- 239000000463 material Substances 0.000 description 19
- 239000000203 mixture Substances 0.000 description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 229910052710 silicon Inorganic materials 0.000 description 16
- 239000010703 silicon Substances 0.000 description 16
- 239000012528 membrane Substances 0.000 description 15
- 238000000151 deposition Methods 0.000 description 13
- 230000008021 deposition Effects 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 11
- 150000002431 hydrogen Chemical class 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 230000006798 recombination Effects 0.000 description 6
- 238000005215 recombination Methods 0.000 description 6
- 241000894007 species Species 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 4
- 150000001485 argon Chemical class 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000003213 activating effect Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000011068 loading method Methods 0.000 description 3
- 230000015654 memory Effects 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000010791 quenching Methods 0.000 description 3
- 230000000171 quenching effect Effects 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- -1 tungsten halogen Chemical class 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000009849 deactivation Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000011534 incubation Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000678 plasma activation Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02252—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
- H01L21/02323—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen
- H01L21/02326—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen into a nitride layer, e.g. changing SiN to SiON
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
- H01L21/02329—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen
- H01L21/02332—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen into an oxide layer, e.g. changing SiO to SiON
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
Abstract
Description
Claims (15)
- 酸化のための方法であって、
処理チャンバの処理領域に第1の流量で水素ガスを流すことであって、前記処理領域の中には基板が配置されている、処理チャンバの処理領域に第1の流量で水素ガスを流すことと、
前駆体活性化装置に第2の流量で酸素ガスを流すことと、
前記前駆体活性化装置に第3の流量でアルゴンガスを流すことと、
前記酸素ガス及び前記アルゴンガスから前記前駆体活性装置内でプラズマを生成することと、
前記プラズマを前記処理領域に流すことであって、前記プラズマが前記水素ガスと混合して活性化処理ガスを生成する、前記プラズマを前記処理領域に流すことと、
前記基板を前記活性化処理ガスに曝露して前記基板に酸化膜を形成することであって、前記酸化膜の成長速度は、前記第3の流量を調整することにより制御される、前記基板を前記活性化処理ガスに曝露して前記基板に酸化膜を形成すること
を含む、酸化のための方法。 - 前記酸化膜の前記成長速度を上げるために、前記第3の流量を増加させることをさらに含む、請求項1に記載の方法。
- 前記酸化膜の前記成長速度を下げるために、前記第3の流量を減少させることをさらに含む、請求項1に記載の方法。
- 前記第2の流量と前記第3の流量との比率(O2:Ar)が、約1:1と約5:1との間である、請求項1に記載の方法。
- 前記プラズマを前記処理領域に流す前に、酸素ガス及び/又はアルゴンガスを前記処理領域に流すことをさらに含む、請求項1に記載の方法。
- 前記基板が、摂氏約500度と摂氏約1100度との間の温度で維持される、請求項5に記載の方法。
- 前記処理領域が、約0.5Torrと約5Torrとの間の圧力で維持される、請求項6に記載の方法。
- アルゴンガス及び酸素ガスの総量に基づく、前記前駆体活性化装置内のアルゴンガスの濃度は、20パーセントと50パーセントとの間である、請求項5に記載の方法。
- 前記プラズマを生成する前に、前記前駆体活性化装置に第4の流量で水素ガスを流すことをさらに含む、請求項1に記載の方法。
- 前記基板が、露出した窒化ケイ素表面、露出したポリシリコン表面、露出したアルミナ表面、及び露出した酸化ケイ素表面のうちの少なくとも1つを含む、請求項1に記載の方法。
- 酸化のための方法であって、
処理チャンバの処理領域内に基板を配置することと、
前駆体活性化装置に第1の流量で水素ガスを流すことであって、前記前駆体活性化装置は前記処理領域と流体的に結合される、前駆体活性化装置に第1の流量で水素ガスを流すことと、
前記前駆体活性化装置に第2の流量で酸素ガスを流すことと、
前記前駆体活性化装置に第3の流量でアルゴンガスを流すことと、
前記水素ガス、前記酸素ガス、及び前記アルゴンガスから前記前駆体活性化装置内でプラズマを生成することと、
前記プラズマを前記処理領域に流すことと、
前記基板を前記プラズマに曝露して前記基板に酸化膜を形成することであって、前記酸化膜の成長速度は前記第3の流量を調整することにより制御される、前記基板を前記プラズマに曝露して前記基板に酸化膜を形成すること
を含む、酸化のための方法。 - 前記酸化膜の前記成長速度を上げるために、前記第3の流量を増加させることをさらに含む、請求項11に記載の方法。
- 前記酸化膜の前記成長速度を下げるために、前記第3の流量を減少させることをさらに含む、請求項11に記載の方法。
- 前記第2の流量と前記第3の流量との比率(O2:Ar)が、約1:1と約5:1との間である、請求項11に記載の方法。
- 前記プラズマを生成する前に、前記前駆体活性化装置を通して前記処理領域に水素ガスを流すことをさらに含む、請求項11に記載の方法。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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US201862617387P | 2018-01-15 | 2018-01-15 | |
US62/617,387 | 2018-01-15 | ||
PCT/US2018/066650 WO2019139761A1 (en) | 2018-01-15 | 2018-12-20 | Argon addition to remote plasma oxidation |
JP2020538078A JP7111819B2 (ja) | 2018-01-15 | 2018-12-20 | 遠隔プラズマによる酸化へのアルゴン添加 |
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WO2021049343A1 (ja) * | 2019-09-12 | 2021-03-18 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置、およびプログラム |
CN110620078B (zh) * | 2019-09-16 | 2022-07-08 | 长江存储科技有限责任公司 | 一种沟道孔内的阻挡氧化层生成方法 |
CN112838093A (zh) * | 2021-01-04 | 2021-05-25 | 长江存储科技有限责任公司 | 半导体器件的制造方法 |
US20220262600A1 (en) * | 2021-02-12 | 2022-08-18 | Applied Materials, Inc. | Fast gas exchange apparatus, system, and method |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002367960A (ja) * | 2001-06-05 | 2002-12-20 | Internatl Business Mach Corp <Ibm> | 高アスペクト比の開口をエッチングする方法 |
JP2004087960A (ja) * | 2002-08-28 | 2004-03-18 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2005294551A (ja) * | 2004-03-31 | 2005-10-20 | Toshiba Corp | シリコン系被処理物の酸化処理方法、酸化処理装置および半導体装置の製造方法 |
WO2007034871A1 (ja) * | 2005-09-22 | 2007-03-29 | Tokyo Electron Limited | 選択的プラズマ処理方法 |
WO2008026531A1 (fr) * | 2006-08-28 | 2008-03-06 | National University Corporation Nagoya University | Procédé de traitement d'oxydation par plasma |
JP2010232240A (ja) * | 2009-03-26 | 2010-10-14 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法、及び半導体製造装置 |
JP2015526903A (ja) * | 2012-08-01 | 2015-09-10 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 遠隔プラズマ源を使用する低温での選択的な酸化のための装置及び方法 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7501352B2 (en) * | 2005-03-30 | 2009-03-10 | Tokyo Electron, Ltd. | Method and system for forming an oxynitride layer |
EP2259294B1 (en) * | 2006-04-28 | 2017-10-18 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device and manufacturing method thereof |
US8236706B2 (en) | 2008-12-12 | 2012-08-07 | Mattson Technology, Inc. | Method and apparatus for growing thin oxide films on silicon while minimizing impact on existing structures |
US9431237B2 (en) * | 2009-04-20 | 2016-08-30 | Applied Materials, Inc. | Post treatment methods for oxide layers on semiconductor devices |
US8492292B2 (en) | 2009-06-29 | 2013-07-23 | Applied Materials, Inc. | Methods of forming oxide layers on substrates |
WO2011097178A2 (en) | 2010-02-02 | 2011-08-11 | Applied Materials, Inc. | Methods for nitridation and oxidation |
US9685320B2 (en) * | 2010-09-23 | 2017-06-20 | Lam Research Corporation | Methods for depositing silicon oxide |
US8741785B2 (en) | 2011-10-27 | 2014-06-03 | Applied Materials, Inc. | Remote plasma radical treatment of silicon oxide |
SG2013083241A (en) * | 2012-11-08 | 2014-06-27 | Novellus Systems Inc | Conformal film deposition for gapfill |
US9728401B2 (en) * | 2013-03-15 | 2017-08-08 | Applied Materials, Inc. | Methods for conformal treatment of dielectric films with low thermal budget |
TWI612182B (zh) * | 2013-09-09 | 2018-01-21 | 液態空氣喬治斯克勞帝方法研究開發股份有限公司 | 用蝕刻氣體蝕刻半導體結構的方法 |
WO2015126590A1 (en) * | 2014-02-18 | 2015-08-27 | Applied Materials, Inc. | Hermetic cvd-cap with improved step coverage in high aspect ratio structures |
US10196728B2 (en) * | 2014-05-16 | 2019-02-05 | Applied Materials, Inc. | Plasma spray coating design using phase and stress control |
TWI670831B (zh) | 2014-09-03 | 2019-09-01 | 美商應用材料股份有限公司 | 用於三維nand硬遮罩應用的奈米結晶鑽石碳膜 |
US10246772B2 (en) | 2015-04-01 | 2019-04-02 | Applied Materials, Inc. | Plasma enhanced chemical vapor deposition of films for improved vertical etch performance in 3D NAND memory devices |
US9502238B2 (en) * | 2015-04-03 | 2016-11-22 | Lam Research Corporation | Deposition of conformal films by atomic layer deposition and atomic layer etch |
US9922840B2 (en) | 2015-07-07 | 2018-03-20 | Applied Materials, Inc. | Adjustable remote dissociation |
US10861693B2 (en) | 2015-12-18 | 2020-12-08 | Applied Materials, Inc. | Cleaning method |
US10224235B2 (en) * | 2016-02-05 | 2019-03-05 | Lam Research Corporation | Systems and methods for creating airgap seals using atomic layer deposition and high density plasma chemical vapor deposition |
US20170323785A1 (en) * | 2016-05-06 | 2017-11-09 | Lam Research Corporation | Method to deposit conformal and low wet etch rate encapsulation layer using pecvd |
JP6928810B2 (ja) * | 2016-05-29 | 2021-09-01 | 東京エレクトロン株式会社 | 側壁イメージ転写の方法 |
WO2018052476A1 (en) | 2016-09-14 | 2018-03-22 | Applied Materials, Inc. | Steam oxidation initiation for high aspect ratio conformal radical oxidation |
KR20220143158A (ko) * | 2018-01-15 | 2022-10-24 | 어플라이드 머티어리얼스, 인코포레이티드 | 원격 플라즈마 산화에 대한 아르곤 추가 |
-
2018
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-
2022
- 2022-07-19 JP JP2022114577A patent/JP7474805B2/ja active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002367960A (ja) * | 2001-06-05 | 2002-12-20 | Internatl Business Mach Corp <Ibm> | 高アスペクト比の開口をエッチングする方法 |
JP2004087960A (ja) * | 2002-08-28 | 2004-03-18 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2005294551A (ja) * | 2004-03-31 | 2005-10-20 | Toshiba Corp | シリコン系被処理物の酸化処理方法、酸化処理装置および半導体装置の製造方法 |
WO2007034871A1 (ja) * | 2005-09-22 | 2007-03-29 | Tokyo Electron Limited | 選択的プラズマ処理方法 |
WO2008026531A1 (fr) * | 2006-08-28 | 2008-03-06 | National University Corporation Nagoya University | Procédé de traitement d'oxydation par plasma |
JP2010232240A (ja) * | 2009-03-26 | 2010-10-14 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法、及び半導体製造装置 |
JP2015526903A (ja) * | 2012-08-01 | 2015-09-10 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 遠隔プラズマ源を使用する低温での選択的な酸化のための装置及び方法 |
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TW201939611A (zh) | 2019-10-01 |
KR20200100851A (ko) | 2020-08-26 |
JP7474805B2 (ja) | 2024-04-25 |
CN111566780A (zh) | 2020-08-21 |
KR20230163578A (ko) | 2023-11-30 |
JP7111819B2 (ja) | 2022-08-02 |
TWI756705B (zh) | 2022-03-01 |
US20190221427A1 (en) | 2019-07-18 |
JP2021510932A (ja) | 2021-04-30 |
US11081340B2 (en) | 2021-08-03 |
KR20220143158A (ko) | 2022-10-24 |
KR102455355B1 (ko) | 2022-10-18 |
TW202117846A (zh) | 2021-05-01 |
US20200251331A1 (en) | 2020-08-06 |
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